公开(公告)号：US20180069073A1

公开(公告)日：2018-03-08

申请号：US15799772

申请日：2017-10-31

Applicant: Renesas Electronics Corporation

Inventor： Takuo Funaya ,  Hiromi Shigihara ,  Hisao SHIGIHARA

IPC: H01L49/02 ,  H01L27/12 ,  H01L27/06 ,  H01L23/00 ,  H01L23/522 ,  H01L23/495

CPC classification number: H01L28/10 ,  H01L23/49575 ,  H01L23/5227 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0617 ,  H01L27/1203 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06102 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/4945 ,  H01L2924/10161 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate having a main surface, a first insulating film formed on the main surface, a first coil formed on the first insulating film, a second insulating film formed on the first coil and having a first main surface and first side surfaces continuous with the first main surface, a third insulating film formed on the first main surface of the second insulating film and having a second main surface and second side surfaces continuous with the second main surface, and a second coil formed on the second main surface of the third insulating film. The second insulating film and the third insulating film are formed as a laminated insulating film together. A thickness of the second coil is greater than a thickness of the first coil in a thickness direction of the semiconductor substrate.

公开(公告)号：US20160087025A1

公开(公告)日：2016-03-24

申请号：US14961622

申请日：2015-12-07

Applicant: Renesas Electronics Corporation

Inventor： Takuo Funaya ,  Hiromi Shigihara ,  Hisao SHIGIHARA

IPC: H01L49/02

CPC classification number: H01L28/10 ,  H01L23/49575 ,  H01L23/5227 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L27/0617 ,  H01L27/1203 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/06102 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49113 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/4945 ,  H01L2924/10161 ,  H01L2924/12041 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor substrate having a main surface; a first coil formed on the main surface; a first insulating film formed over the first coil and having a first main surface; a second insulating film formed on the first main surface of the first insulating film and having a second main surface; and a second coil formed on the second main surface of the second insulating film, wherein the first main surface of the first insulating film has a first area on which the second insulating film is formed, and has a second area without the first area in a plan view, and wherein the second insulating film is surrounded with the second area in the plane view.

Abstract translation: 半导体器件包括具有主表面的半导体衬底; 形成在主表面上的第一线圈; 形成在所述第一线圈上并具有第一主表面的第一绝缘膜; 形成在第一绝缘膜的第一主表面上并具有第二主表面的第二绝缘膜; 以及形成在所述第二绝缘膜的所述第二主表面上的第二线圈，其中所述第一绝缘膜的所述第一主表面具有形成有所述第二绝缘膜的第一区域，并且在第一区域中具有第一区域， 平面图，并且其中第二绝缘膜在平面图中被第二区域包围。

公开(公告)号：US20160240484A1

公开(公告)日：2016-08-18

申请号：US15139825

申请日：2016-04-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hisao SHIGIHARA ,  Hiromi SHIGIHARA ,  Akira YAJIMA ,  Hiroshi TSUKAMOTO

IPC: H01L23/532 ,  H01L23/29 ,  H01L23/00

CPC classification number: H01L23/53238 ,  H01L21/4885 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/4952 ,  H01L23/49811 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/43 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/85 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02373 ,  H01L2224/02377 ,  H01L2224/02379 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03474 ,  H01L2224/0361 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05084 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/06135 ,  H01L2224/06138 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/85181 ,  H01L2224/94 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00015 ,  H01L2924/01046 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01024 ,  H01L2224/0231 ,  H01L2924/00012

Abstract: To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Abstract translation: 通过提高半导体芯片和接合线之间的耦合性能来提供具有提高的可靠性的半导体器件。 再分配层由从半导体基板侧连续形成的Cu膜，Ni膜和Pd膜构成。 将最上表面的Pd膜用作电极焊盘，并且由Cu制成的接合线耦合到Pd膜的上表面。 使得Pd膜的厚度小于Ni膜的厚度，并使Ni膜的厚度小于Cu膜的厚度。 Cu膜，Ni膜和Pd膜在平面图中具有相同的图案形状。

公开(公告)号：US20140021618A1

公开(公告)日：2014-01-23

申请号：US13924938

申请日：2013-06-24

Applicant: Renesas Electronics Corporation

Inventor： Hisao SHIGIHARA ,  Hiromi SHIGIHARA ,  Akira YAJIMA ,  Hiroshi TSUKAMOTO

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/53238 ,  H01L21/4885 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/4952 ,  H01L23/49811 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/43 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/85 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02373 ,  H01L2224/02377 ,  H01L2224/02379 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03474 ,  H01L2224/0361 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05084 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/06135 ,  H01L2224/06138 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/85181 ,  H01L2224/94 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00015 ,  H01L2924/01046 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01024 ,  H01L2224/0231 ,  H01L2924/00012

Abstract: To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Abstract translation: 通过提高半导体芯片和接合线之间的耦合性能来提供具有提高的可靠性的半导体器件。 再分配层由从半导体基板侧连续形成的Cu膜，Ni膜和Pd膜构成。 将最上表面的Pd膜用作电极焊盘，并且由Cu制成的接合线耦合到Pd膜的上表面。 使得Pd膜的厚度小于Ni膜的厚度，并使Ni膜的厚度小于Cu膜的厚度。 Cu膜，Ni膜和Pd膜在平面图中具有相同的图案形状。