公开(公告)号：US20130313708A1

公开(公告)日：2013-11-28

申请号：US13952596

申请日：2013-07-27

Applicant: Renesas Electronics Corporation

Inventor： Hiromi SHIGIHARA ,  Hiroshi TSUKAMOTO ,  Akira YAJIMA

IPC: H01L23/498 ,  H01L23/485

CPC classification number: H01L24/05 ,  H01L21/565 ,  H01L22/32 ,  H01L23/485 ,  H01L23/49816 ,  H01L24/06 ,  H01L24/12 ,  H01L24/16 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/81 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/02205 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05027 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05173 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05558 ,  H01L2224/05564 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/05583 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/0568 ,  H01L2224/06183 ,  H01L2224/1134 ,  H01L2224/13099 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16225 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4502 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45164 ,  H01L2224/45169 ,  H01L2224/46 ,  H01L2224/4807 ,  H01L2224/48095 ,  H01L2224/48145 ,  H01L2224/48158 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/4868 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/48755 ,  H01L2224/48764 ,  H01L2224/4878 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/4888 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/81193 ,  H01L2224/81801 ,  H01L2224/83101 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85464 ,  H01L2225/0651 ,  H01L2225/06517 ,  H01L2924/00011 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01065 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/078 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/3511 ,  H01L2924/00014 ,  H01L2924/01039 ,  H01L2924/0665 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/0002 ,  H01L2924/00015

Abstract: In semiconductor integrated circuit devices for vehicle use, an aluminum pad on a semiconductor chip and an external device are coupled to each other by wire bonding using a gold wire for the convenience of mounting. Such a semiconductor integrated circuit device, however, causes a connection failure due to the interaction between aluminum and gold in use for a long time at a relatively high temperature (about 150 degrees C.). A semiconductor integrated circuit device can include a semiconductor chip as a part of the device, an electrolytic gold plated surface film (gold-based metal plated film) provided over an aluminum-based bonding pad on a semiconductor chip via a barrier metal film, and a gold bonding wire (gold-based bonding wire) for interconnection between the plated surface film and an external lead provided over a wiring board (wiring substrate).

Abstract translation: 在用于车辆用途的半导体集成电路器件中，半导体芯片上的铝焊盘和外部器件通过使用金线的引线接合彼此耦合以便于安装。 然而，这样的半导体集成电路器件在相对较高的温度（约150℃）下长时间使用铝和金之间的相互作用导致连接故障。 半导体集成电路器件可以包括作为器件的一部分的半导体芯片，经由阻挡金属膜设置在半导体芯片上的铝基焊盘上的电解镀金表面膜（金基金属镀膜），以及 用于在电镀表面膜和设置在布线板（布线基板）上的外部引线之间互连的金接合线（金基接合线）。

公开(公告)号：US20160240484A1

公开(公告)日：2016-08-18

申请号：US15139825

申请日：2016-04-27

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Hisao SHIGIHARA ,  Hiromi SHIGIHARA ,  Akira YAJIMA ,  Hiroshi TSUKAMOTO

IPC: H01L23/532 ,  H01L23/29 ,  H01L23/00

CPC classification number: H01L23/53238 ,  H01L21/4885 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/4952 ,  H01L23/49811 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/43 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/85 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02373 ,  H01L2224/02377 ,  H01L2224/02379 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03474 ,  H01L2224/0361 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05084 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/06135 ,  H01L2224/06138 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/85181 ,  H01L2224/94 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00015 ,  H01L2924/01046 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01024 ,  H01L2224/0231 ,  H01L2924/00012

Abstract: To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Abstract translation: 通过提高半导体芯片和接合线之间的耦合性能来提供具有提高的可靠性的半导体器件。 再分配层由从半导体基板侧连续形成的Cu膜，Ni膜和Pd膜构成。 将最上表面的Pd膜用作电极焊盘，并且由Cu制成的接合线耦合到Pd膜的上表面。 使得Pd膜的厚度小于Ni膜的厚度，并使Ni膜的厚度小于Cu膜的厚度。 Cu膜，Ni膜和Pd膜在平面图中具有相同的图案形状。

公开(公告)号：US20140021618A1

公开(公告)日：2014-01-23

申请号：US13924938

申请日：2013-06-24

Applicant: Renesas Electronics Corporation

Inventor： Hisao SHIGIHARA ,  Hiromi SHIGIHARA ,  Akira YAJIMA ,  Hiroshi TSUKAMOTO

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/53238 ,  H01L21/4885 ,  H01L23/293 ,  H01L23/3192 ,  H01L23/4952 ,  H01L23/49811 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/43 ,  H01L24/45 ,  H01L24/46 ,  H01L24/48 ,  H01L24/85 ,  H01L24/94 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02373 ,  H01L2224/02377 ,  H01L2224/02379 ,  H01L2224/0239 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/03474 ,  H01L2224/0361 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05008 ,  H01L2224/05084 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05171 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05569 ,  H01L2224/05644 ,  H01L2224/05664 ,  H01L2224/06135 ,  H01L2224/06138 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/16245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/48664 ,  H01L2224/48844 ,  H01L2224/48864 ,  H01L2224/85181 ,  H01L2224/94 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/014 ,  H01L2924/00015 ,  H01L2924/01046 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01024 ,  H01L2224/0231 ,  H01L2924/00012

Abstract: To provide a semiconductor device having improved reliability by improving a coupling property between a semiconductor chip and a bonding wire. A redistribution layer is comprised of a Cu film, an Ni film, and a Pd film which have been formed successively from the side of a semiconductor substrate. The Pd film on the uppermost surface is used as an electrode pad and a bonding wire made of Cu is coupled to the upper surface of the Pd film. The thickness of the Pd film is made smaller than that of the Ni film and the thickness of the Ni film is made smaller than that of the Cu film. The Cu film, the Ni film, and the Pd film have the same pattern shape in a plan view.

Abstract translation: 通过提高半导体芯片和接合线之间的耦合性能来提供具有提高的可靠性的半导体器件。 再分配层由从半导体基板侧连续形成的Cu膜，Ni膜和Pd膜构成。 将最上表面的Pd膜用作电极焊盘，并且由Cu制成的接合线耦合到Pd膜的上表面。 使得Pd膜的厚度小于Ni膜的厚度，并使Ni膜的厚度小于Cu膜的厚度。 Cu膜，Ni膜和Pd膜在平面图中具有相同的图案形状。