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    Extended wavelength strained layer lasers having strain compensated layers
    4.
    发明授权
    Extended wavelength strained layer lasers having strain compensated layers 失效
    具有应变补偿层的扩展波长应变层激光器

    公开(公告)号：US5960018A

    公开(公告)日：1999-09-28

    申请号：US115689

    申请日：1998-07-15

    申请人： Jack L. Jewell ,  Henryk Temkin

    发明人： Jack L. Jewell ,  Henryk Temkin

    IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/30 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19 ,  H01L29/06 ,  H01S3/08

    CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01S5/18311 ,  H01S5/2231 ,  H01S5/3235 ,  H01S5/34 ,  H01S5/343 ,  H01L33/105 ,  H01S2302/00 ,  H01S5/0211 ,  H01S5/1221 ,  H01S5/18358 ,  H01S5/2215 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/34306

    摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 .mu.m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) sue of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100.degree. C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

    摘要翻译： 以新颖的方式使用几种方法，用新的识别和可行的参数来降低伪晶InGaAs / GaAs异质结构的峰跃迁能。 单独或组合使用的这些技术足以允许在发光电光器件的1.3μm或更大的波长处操作发光器件。 这些方法或技术例如包括：（1）利用在有源区域中具有高In浓度的新超晶格结构，（2）利用应变补偿增加适当高浓度的量子阱的可用层厚度，（3） 在伪晶InGaAsN / GaAs激光器结构中适当地使用少量的氮（N），（4）采用标称（111）取向的衬底，以增加适当高的In浓度的量子阱的可用层厚度。 在所有上述技术中，增益偏移可以用于VCSEL中，以通过适当的DBR间隔将低于峰值跃迁能量的发射能量去除约25meV或甚至更多。 在某些形式的平面内激光器中也可以使用增益偏移。 也可以使用增加的温度来将峰值转变能量（因此发射能量）降低约50meV / 100℃。所有这些技术还可应用于其他材料系统，例如，扩展生长在激光二极管上的激光二极管的发射波长 InP衬底。 另外，讨论了利用上述技术的结构。

    Temperature compensated optical multiplexer
    6.
    发明申请
    Temperature compensated optical multiplexer 失效
    温度补偿光复用器

    公开(公告)号：US20050169579A1

    公开(公告)日：2005-08-04

    申请号：US11042612

    申请日：2005-01-25

    申请人： Henryk Temkin ,  Luis Grave de Peralta ,  Ayrton Bernussi ,  Valeri Gorbounov

    发明人： Henryk Temkin ,  Luis Grave de Peralta ,  Ayrton Bernussi ,  Valeri Gorbounov

    IPC分类号： G02B6/34

    CPC分类号： G02B6/12011 ,  G02B6/1203

    摘要： An optical multiplexer that adjusts the wavelength response and compensates for temperature effects by using rotatable mirror. The wavelength response of the device is adjusted by aligning the mirror at a correct angle with respect to the surface terminating the optical waveguide grating. The temperature dependence of the index of refraction of the material comprising the waveguides is compensated for by rotating a reflecting surface of the mirror, the rotation based on differential thermal expansion. Some exemplary embodiments may comprise a slab waveguide on a substrate (the slab waveguide having a first and second arcuate end surfaces) attached to a submount, a mirror assembly rigidly attached to the submount (the mirror assembly comprising a first and second materials having different coefficients of thermal expansion), and an optical waveguide grating (upon the substrate attached to the submount) optically coupled between the second arcuate surface and the mirror assembly. A portion of the mirror assembly between the reflector surface and where the mirror assembly is rigidly attached to the submount deforms as a function of temperature to change an angle between the optical waveguide grating and the reflecting surface.

    摘要翻译： 一种光学多路复用器，通过使用可旋转镜来调节波长响应并补偿温度影响。 通过将反射镜相对于终止光波导光栅的表面以正确的角度对准来调节装置的波长响应。 包括波导的材料的折射率的温度依赖性通过旋转反射镜的反射表面，基于差分热膨胀的旋转来补偿。 一些示例性实施例可以包括附接到基座的基板上的平板波导（具有第一和第二弧形端面的平板波导），刚性地附接到基座的反射镜组件（反射镜组件包括具有不同系数的第一和第二材料 的热膨胀）和光学耦合在第二弧形表面和反射镜组件之间的光波导光栅（在附接到基座的基板上）。 反射镜组件在反射器表面和反射镜组件刚性地附接到基座之间的一部分作为温度的函数变形，以改变光波导光栅和反射表面之间的角度。

    Optical waveguide structures and methods of fabrication
    7.
    发明授权
    Optical waveguide structures and methods of fabrication 失效
    光波导结构和制造方法

    公开(公告)号：US06618537B2

    公开(公告)日：2003-09-09

    申请号：US10047780

    申请日：2002-01-14

    申请人： Henryk Temkin ,  Rudolf Feodor Kazarinov

    发明人： Henryk Temkin ,  Rudolf Feodor Kazarinov

    IPC分类号： G02B610

    CPC分类号： G02B6/132 ,  G02B6/136 ,  G02B2006/12169 ,  G02B2006/12176

    摘要： Methods of fabricating solid state optical waveguide structures comprising a doped silicon dioxide core layer sandwiched between lower and upper doped silicon dioxide cladding layers on a silicon substrate. The core and upper cladding layers are deposited using a plasma enhanced CVD process. The core layer is patterned to define one or more waveguide cores. The lower cladding layer is preferably also deposited using a plasma enhanced CVD process but alternatively may be formed by thermal oxidation.

    摘要翻译： 制造固态光波导结构的方法，其包括在硅衬底上夹在下掺杂和上掺杂二氧化硅覆层之间的掺杂二氧化硅芯层。 使用等离子体增强CVD工艺沉积芯层和上覆层。 将芯层图案化以限定一个或多个波导芯。 下包层优选也使用等离子体增强CVD工艺沉积，但是也可以通过热氧化形成。

    Birefringence free optical waveguide structures
    8.
    发明授权
    Birefringence free optical waveguide structures 失效
    双折射光波导结构

    公开(公告)号：US06580864B1

    公开(公告)日：2003-06-17

    申请号：US10047779

    申请日：2002-01-14

    申请人： Henryk Temkin ,  Rudolf Feodor Kazarinov

    发明人： Henryk Temkin ,  Rudolf Feodor Kazarinov

    IPC分类号： G02B610

    CPC分类号： G02B6/136 ,  G02B6/105 ,  G02B2006/12038 ,  G02B2006/12169

    摘要： An optical waveguide structure comprising an annealed phosphorous doped silicon dioxide core surrounded by silicon dioxide cladding layers on a silicon substrate. The refractive index of the core exceeds the refractive index of the cladding to enable waveguiding of optical signals in the core. The upper cladding layer, and in one embodiment also the lower cladding, comprises high boron and phosphorous doped silicon dioxide, suitably doped with greater than about 9% of boron and with about 2.5% to 3.5% phosphorous to obtain a thermal coefficient of expansion approximating that of the silicon substrate. In an alternative embodiment, the lower cladding layer comprises thermally grown silicon dioxide, preferably including an upstanding pedestal on which the waveguide core extends. Advantageously, the cladding composition enables substantially compensation of compressive stress in the core by residual tensile strain in the cladding, thereby reducing to very low values birefringence induced optical signal shift between TE and TM modes of propagation of an optical signal.

    摘要翻译： 一种光波导结构，包括由硅衬底上的二氧化硅包覆层包围的退火磷掺杂二氧化硅芯。 芯的折射率超过包层的折射率，以使得能够在芯中波导光信号。 上覆层，并且在一个实施例中也是下包层，包括高硼和磷掺杂二氧化硅，适当地掺杂有大于约9％的硼和约2.5％至3.5％的磷以获得近似的热膨胀系数 硅衬底的。 在替代实施例中，下包层包括热生长的二氧化硅，优选地包括直立的基座，波导芯延伸在其上。 有利地，包层组合物能够通过包层中的残余拉伸应变基本上补偿芯中的压缩应力，由此降低到在光信号的TE和TM传播模式之间的双折射引起的光信号偏移的非常低的值。

    Extended wavelength strained layer lasers having strain compensated layers
    9.
    发明授权
    Extended wavelength strained layer lasers having strain compensated layers 失效

    公开(公告)号：US06546031B1

    公开(公告)日：2003-04-08

    申请号：US09602776

    申请日：2000-06-23

    申请人： Jack L. Jewell ,  Henryk Temkin

    发明人： Jack L. Jewell ,  Henryk Temkin

    IPC分类号： H01S500

    CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01L33/06 ,  H01L33/105 ,  H01L33/30 ,  H01L33/32 ,  H01S5/0211 ,  H01S5/1221 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/3235 ,  H01S5/32366 ,  H01S5/32383 ,  H01S5/34 ,  H01S5/3403 ,  H01S5/3406 ,  H01S5/342 ,  H01S5/343 ,  H01S5/34306 ,  H01S2302/00

    摘要： Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operation of light emitting devices at wavelengths of 1.3 &mgr;m or greater of light-emitting electro-optic devices. These methods or techniques, by example, include: (1) utilizing new superlattice structures having high In concentrations in the active region, (2) utilizing strain compensation to increase the usable layer thickness for quantum wells with appropriately high In concentrations, (3) utilizing appropriately small amounts of nitrogen (N) in the pseudomorphic InGaAsN/GaAs laser structure, and (4) use of nominal (111) oriented substrates to increase the usable layer thickness for quantum wells with appropriately high In concentrations. In all of the above techniques, gain offset may be utilized in VCSELs to detune the emission energy lower than the peak transition energy, by about 25 meV or even more, via appropriate DBR spacing. Gain offset may also be utilized in some forms of in-plane lasers. Increased temperature may also be used to decrease peak transition energy (and therefore the emission energy) by about 50 meV/100° C. All these techniques are furthermore applicable to other material systems, for example, extending the emission wavelength for laser diodes grown on InP substrates. Additionally, structures which utilize the above techniques are discussed.

    Self-aligned rib-waveguide high power laser
    10.
    发明授权
    Self-aligned rib-waveguide high power laser 失效
    自对准肋波导高功率激光器

    公开(公告)号：US4615032A

    公开(公告)日：1986-09-30

    申请号：US630691

    申请日：1984-07-13

    申请人： Walter R. Holbrook ,  Claude L. Reynolds, Jr. ,  Julie A. Shimer ,  Henryk Temkin

    发明人： Walter R. Holbrook ,  Claude L. Reynolds, Jr. ,  Julie A. Shimer ,  Henryk Temkin

    IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S3/18

    CPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/2004

    摘要： The specification describes an improved form of heterostructure laser, termed a "Rib-Loc" laser. It is an easily fabricated device with desirable electrical and optical properties. The Rib-Loc is simple to fabricate because a single, self-aligned rib provides ohmic contact, current confinement and lateral waveguiding. A deeply etched P-cladding layer outside the rib provides the positive index change needed for an index-guided laser. The large optical cavity increases the maximum power output and reduces the aspect ratio of the beam.

    摘要翻译： 该规范描述了异质结构激光器的改进形式，称为“Rib-Loc”激光器。 它是一种易于制造的具有所需电学和光学特性的器件。 Rib-Loc制造简单，因为单个自对准肋提供欧姆接触，电流限制和横向波导。 肋之外的深蚀刻的P包层提供了索引引导激光器所需的正指数变化。 大型光学腔增加了最大功率输出并降低了光束的纵横比。