公开(公告)号：US06620720B1

公开(公告)日：2003-09-16

申请号：US09546037

申请日：2000-04-10

申请人： Ralph Salvatore Moyer ,  Vivian Wanda Ryan

发明人： Ralph Salvatore Moyer ,  Vivian Wanda Ryan

IPC分类号： H01L2144

CPC分类号： H01L24/13 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/0347 ,  H01L2224/03914 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04073 ,  H01L2224/05083 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05166 ,  H01L2224/05624 ,  H01L2224/05655 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/4554 ,  H01L2224/45572 ,  H01L2224/45573 ,  H01L2224/45655 ,  H01L2224/45666 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48655 ,  H01L2224/48699 ,  H01L2224/48724 ,  H01L2224/48755 ,  H01L2924/0001 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01007 ,  H01L2924/01011 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/20302 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2224/45644 ,  H01L2924/01004 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/013 ,  H01L2924/01006

摘要： The specification describes a process for forming a barrier layer on copper metallization in semiconductor integrated circuits. The barrier layer is effective for both wire bond and solder bump interconnections. The barrier layer is Ti/Ni formed on the copper. Aluminum bond pads are formed on the barrier layer for wire bond interconnections and copper bond pads are formed on the barrier layer for solder bump interconnections.

摘要翻译： 该说明书描述了在半导体集成电路中在铜金属化上形成阻挡层的工艺。 阻挡层对于引线键合和焊料凸块互连都是有效的。 阻挡层是在铜上形成的Ti / Ni。 铝焊盘形成在阻焊层上用于引线接合互连，并且在阻焊层上形成铜焊盘用于焊料凸块互连。

公开(公告)号：US6088504A

公开(公告)日：2000-07-11

申请号：US160315

申请日：1998-09-25

申请人： Robert W. Filas ,  Ralph Salvatore Moyer ,  Craig G. Smith

发明人： Robert W. Filas ,  Ralph Salvatore Moyer ,  Craig G. Smith

IPC分类号： G02B6/42 ,  G02B6/00

CPC分类号： G02B6/4248

摘要： An in-line hermetic seal for an optical fiber which has an outer diameter and a stripped mid-section contains the stripped mid-section. A tube has an interior with a diameter larger than the outer diameter of the optical fiber and has an opening through a wall of the tube to the interior. The tube and the optical fiber having the stripped mid-section extending through the tube define an annular space therebetween. Soldering means fills the annular space. Sealing means holds the optical fiber approximately centered in ends of the tube. The stripped mid-section is contained by the tube, the sealing means and the soldering means. A method in accordance with the present invention is also described.

摘要翻译： 具有外径和剥离的中间部分的光纤的直列密封用于包含剥离的中间部分。 管具有直径大于光纤的外径的内部，并且具有通过管的壁到内部的开口。 具有延伸穿过管的剥离的中间部分的管和光纤在其间限定了环形空间。 焊接装置填充环形空间。 密封装置将光纤保持在管的端部大致中心。 剥离的中段由管，密封装置和焊接装置容纳。 还描述了根据本发明的方法。

公开(公告)号：US07541669B2

公开(公告)日：2009-06-02

申请号：US11788346

申请日：2007-04-19

申请人： Patrick Joseph Carberry ,  Jeffery John Gilbert ,  George John Libricz, Jr. ,  Ralph Salvatore Moyer ,  John William Osenbach ,  Hugo Fernando Safar ,  Thomas Herbert Shilling

发明人： Patrick Joseph Carberry ,  Jeffery John Gilbert ,  George John Libricz, Jr. ,  Ralph Salvatore Moyer ,  John William Osenbach ,  Hugo Fernando Safar ,  Thomas Herbert Shilling

IPC分类号： H01L33/00 ,  H01L23/495 ,  H01L23/28 ,  H01L23/34

CPC分类号： H01L23/49548 ,  H01L23/4334 ,  H01L23/49541 ,  H01L23/49861 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device package comprises a container including a base and sidewalls. The base is configured to support a semiconductor device chip, and a lead frame extends through at least one of the sidewalls. A portion of the lead frame within the sidewall has at least one aperture penetrating into the lead frame. The sidewall material extends into the aperture, thereby forming a strong interfacial bond that provides a low leakage, sidewall-lead-frame interface. The base has a reentrant feature that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby forming a low leakage base-sidewall interface. The top surface of the base has a groove that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby enhancing the low leakage base-sidewall interface.

摘要翻译： 半导体器件封装包括包括基底和侧壁的容器。 基座被配置为支撑半导体器件芯片，并且引线框架延伸穿过至少一个侧壁。 引导框架在侧壁内的一部分具有穿透引线框架的至少一个孔。 侧壁材料延伸到孔中，从而形成强界面结合，其提供低泄漏侧壁引线框架界面。 底座具有位于至少一个侧壁的厚度内并与至少一个侧壁接合的折入特征，从而形成低泄漏的底壁 - 侧壁界面。 基座的顶表面具有凹槽，该凹槽位于至少一个侧壁的厚度内并与至少一个侧壁接合，由此增强了低泄漏的底壁 - 侧壁界面。

公开(公告)号：US07956451B2

公开(公告)日：2011-06-07

申请号：US11015535

申请日：2004-12-18

申请人： Patrick Joseph Carberry ,  Jeffery John Gilbert ,  George John Libricz, Jr. ,  Ralph Salvatore Moyer

发明人： Patrick Joseph Carberry ,  Jeffery John Gilbert ,  George John Libricz, Jr. ,  Ralph Salvatore Moyer

IPC分类号： H01L31/08

CPC分类号： H01L23/057 ,  H01L23/24 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01079 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15153 ,  H01L2924/1517 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor device package comprises a container having a base and side walls of an electrically insulating material. A semiconductor device chip is disposed on the base, and a lead frame extends through the side walls. At least one electrical conductor couples the lead frame to the chip. A first layer of an electrically insulating cured gel covers the chip and the lead frame, and a second layer of an electrically insulating cured gel covers at least the portion of the first layer that covers the chip, but does not extend to the side walls. In one embodiment, the second layer has the shape of a dome. In a preferred embodiment the gel comprises silicone. In another embodiment a third layer of conformal insulating material is disposed on the second layer and essentially fills the container. Also is described is a method of making the package for use with RFLDMOS chips.

摘要翻译： 半导体器件封装包括具有电绝缘材料的基底和侧壁的容器。 半导体器件芯片设置在基座上，引线框架延伸穿过侧壁。 至少一个电导体将引线框架连接到芯片。 电绝缘固化凝胶的第一层覆盖芯片和引线框架，并且电绝缘固化凝胶的第二层至少覆盖覆盖芯片的第一层的部分，但不延伸到侧壁。 在一个实施例中，第二层具有圆顶的形状。 在优选的实施方案中，凝胶包含硅树脂。 在另一个实施例中，第三层共形绝缘材料设置在第二层上并基本上填充容器。 还描述了制造用于RFLDMOS芯片的封装的方法。

公开(公告)号：US6081646A

公开(公告)日：2000-06-27

申请号：US863432

申请日：1997-05-27

申请人： Robert W. Filas ,  Ralph Salvatore Moyer ,  Craig G. Smith

发明人： Robert W. Filas ,  Ralph Salvatore Moyer ,  Craig G. Smith

IPC分类号： G02B6/42 ,  G02B6/00

CPC分类号： G02B6/4248

摘要： An in-line hermetic seal for an optical fiber which has an outer diameter and a stripped mid-section contains the stripped mid-section. A tube has an interior with a diameter larger than the outer diameter of the optical fiber and has an opening through a wall of the tube to the interior. The tube and the optical fiber having the stripped mid-section extending through the tube define an annular space therebetween. Soldering means fills the annular space. Sealing means holds the optical fiber approximately centered in ends of the tube. The stripped mid-section is contained by the tube, the sealing means and the soldering means.

摘要翻译： 具有外径和剥离的中间部分的光纤的直列密封用于包含剥离的中间部分。 管具有直径大于光纤的外径的内部，并且具有通过管的壁到内部的开口。 具有延伸穿过管的剥离的中间部分的管和光纤在其间限定了环形空间。 焊接装置填充环形空间。 密封装置将光纤保持在管的端部大致中心。 剥离的中段由管，密封装置和焊接装置容纳。

公开(公告)号：US07224047B2

公开(公告)日：2007-05-29

申请号：US11015534

申请日：2004-12-18

申请人： Patrick Joseph Carberry ,  Jeffery John Gilbert ,  George John Libricz, Jr. ,  Ralph Salvatore Moyer ,  John William Osenbach ,  Hugo Fernando Safar ,  Thomas Herbert Shilling

发明人： Patrick Joseph Carberry ,  Jeffery John Gilbert ,  George John Libricz, Jr. ,  Ralph Salvatore Moyer ,  John William Osenbach ,  Hugo Fernando Safar ,  Thomas Herbert Shilling

IPC分类号： H01L23/495 ,  H01L23/02 ,  H01L23/28 ,  H01L23/34 ,  H01L33/00

CPC分类号： H01L23/49548 ,  H01L23/4334 ,  H01L23/49541 ,  H01L23/49861 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/16195 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device package comprises a container including a base and sidewalls. The base is configured to support a semiconductor device chip, and a lead frame extends through at least one of the sidewalls. A portion of the lead frame within the sidewall has at least one aperture penetrating into the lead frame. The sidewall material extends into the aperture, thereby forming a strong interfacial bond that provides a low leakage, sidewall-lead-frame interface. The base has a reentrant feature that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby forming a low leakage base-sidewalls interface. The top surface of the base has a groove that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby enhancing the low leakage base-sidewall interface.

摘要翻译： 半导体器件封装包括包括基底和侧壁的容器。 基座被配置为支撑半导体器件芯片，并且引线框架延伸穿过至少一个侧壁。 引导框架在侧壁内的一部分具有穿透引线框架的至少一个孔。 侧壁材料延伸到孔中，从而形成强界面结合，其提供低泄漏侧壁引线框架界面。 底座具有位于至少一个侧壁的厚度内的折入特征，并与至少一个侧壁接合，由此形成低泄漏的底壁 - 侧壁界面。 基座的顶表面具有凹槽，该凹槽位于至少一个侧壁的厚度内并与至少一个侧壁接合，由此增强了低泄漏的底壁 - 侧壁界面。