CURED RESIN FILM, SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

    公开(公告)号:US20240352275A1

    公开(公告)日:2024-10-24

    申请号:US18684930

    申请日:2022-08-24

    CPC classification number: C09D163/04 C09D125/16 C09D179/08 H01L21/76873

    Abstract: A semiconductor device production method including: applying a resin composition onto a substrate and drying the resin composition to form a resin film; heating the resin film to obtain a cured resin film; forming a metal seed layer by sputtering on a surface of the cured resin film; forming a resist pattern having an opening portion for forming a wiring pattern on a surface of the metal seed layer; forming a metal layer having a wiring pattern with a wiring width of 3 μm or less and an inter-wiring distance of 3 μm or less by electrolytic plating in a region on the surface of the metal seed layer exposed from the resist pattern; removing the resist pattern; and removing the metal seed layer exposed by the removal of the resist pattern, wherein a cross-linking density of the cured resin film is 0.1×10−3 to 110×10−3 mol/cm3.

    WIRING STRUCTURE, METHOD FOR MANUFACTURING SAME, AND SEMICONDUCTOR PACKAGE

    公开(公告)号:US20240397635A1

    公开(公告)日:2024-11-28

    申请号:US18791515

    申请日:2024-08-01

    Abstract: A method for manufacturing a wiring structure includes forming a wiring on an insulating resin layer, which includes forming a modified region including pores in a surface layer of the insulating resin layer by treating a surface of the insulating resin layer with a treatment method including surface modification; forming a seed layer on the surface of the insulating resin layer by sputtering; and forming the wiring on the seed layer by electrolytic copper plating. The method may include, in this order, forming a surface treatment agent layer that covers a surface of the wiring by treating the surface of the wiring with a surface treatment agent for improving adhesion; and forming a modified region including pores in a surface layer of a first layer of the insulating resin layer by treating the surface of the first layer of the insulating resin layer with a treatment method including surface modification.

    METHOD FOR PRODUCING WIRING BOARD, AND WIRING BOARD

    公开(公告)号:US20240015889A1

    公开(公告)日:2024-01-11

    申请号:US18044789

    申请日:2021-09-09

    CPC classification number: H05K1/181 H05K3/1208 H05K3/181 H05K3/022

    Abstract: A method for producing a wiring board, including: a step of pretreating the surface of a metal layer exposed into an opening by bringing the surface into contact with a pretreatment liquid at a predetermined pretreatment temperature; and a step of forming a copper plating layer on the metal layer by electrolytic plating. The resist layer and the pretreatment liquid are selected such that a mass change rate of the resist layer when the resist layer before being exposed and developed is immersed in the pretreatment liquid is −2.0% by mass or more. The mass change rate is a value calculated by Expression: Mass change rate (% by mass)={(W1−W0)/W0}×100. W1 is the mass of the resist layer after a laminated body including a resist layer 3 and a copper foil is immersed in the pretreatment liquid at the pretreatment temperature for 30 minutes.

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