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    Time-resolved single-photon or ultra-weak light multi-dimensional imaging spectrum system and method
    3.
    发明授权
    Time-resolved single-photon or ultra-weak light multi-dimensional imaging spectrum system and method 有权
    时间分辨单光子或超弱光多维成像光谱系统及方法

    公开(公告)号：US09448162B2

    公开(公告)日：2016-09-20

    申请号：US14351028

    申请日：2012-05-14

    Applicant: Guangjie Zhai ,  Wenkai Yu ,  Xuefeng Liu ,  Xuri Yao ,  Chao Wang ,  Zhibin Sun

    Inventor： Guangjie Zhai ,  Wenkai Yu ,  Xuefeng Liu ,  Xuri Yao ,  Chao Wang ,  Zhibin Sun

    IPC: G01N21/25 ,  G01N21/64 ,  G01N21/17 ,  H03K21/38 ,  G01J1/04 ,  G01J1/42 ,  G01S17/89 ,  G01S7/481 ,  G01S7/486 ,  G02B26/08

    CPC classification number: G01N21/255 ,  G01J1/0414 ,  G01J1/4228 ,  G01N21/17 ,  G01N21/6456 ,  G01S7/4816 ,  G01S7/486 ,  G01S17/89 ,  G02B26/0833 ,  H03K21/38

    Abstract: A single-photon or ultra-weak light multi-D imaging spectral system and method. In order to realize rough time resolution, a time-resolved single-photon counting 2D imaging system for forming color or grey imaging is provided. Moreover, in order to realize high-precision time resolution, the system comprises a light source, an imaging spectral measurement unit, an electric detection unit, a system control unit and an algorithm unit. The light carrying information of an object is imaged on a spatial light modulator and randomly modulated according to compressed sensing theory, emergent light of a grating is collected using a point or array single-photon detector, the number of photons and photon arrival time are recorded, and reconstruction is carried out using the compressed sensing algorithm and related algorithm of the spectral imaging. The system provides single-photon detection sensitivity, high time resolution and wide spectral range, and can be applied in numerous new high-tech industries.

    Abstract translation: 单光子或超弱光多D成像光谱系统及方法。 为了实现粗糙的时间分辨率，提供了用于形成彩色或灰度成像的时间分辨的单光子计数2D成像系统。 此外，为了实现高精度时间分辨率，该系统包括光源，成像光谱测量单元，电检测单元，系统控制单元和算法单元。 物体的光携带信息在空间光调制器上成像，并且根据压缩感测理论随机调制，使用点或阵列单光子检测器收集光栅的出射光，记录光子数和光子到达时间 ，并利用压缩感知算法和相关的光谱成像算法进行重建。 该系统提供单光子检测灵敏度高，时间分辨率高，光谱范围广，可应用于众多新兴高科技行业。

    Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements
    4.
    发明授权
    Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements 有权
    计量系统的照明子系统，计量系统以及用于计量测量的照明样本的方法

    公开(公告)号：US09080990B2

    公开(公告)日：2015-07-14

    申请号：US13061936

    申请日：2009-09-29

    Applicant: Yung-Ho (Alex) Chuang ,  Vladimir Levinski ,  Xuefeng Liu

    Inventor： Yung-Ho (Alex) Chuang ,  Vladimir Levinski ,  Xuefeng Liu

    IPC: G01N21/55 ,  G01N21/95 ,  G01N21/47

    CPC classification number: G01N21/9501 ,  G01N2021/479

    Abstract: Illumination subsystems of a metrology system, metrology systems, and methods for illuminating a specimen for metrology measurements are provided. One illumination subsystem includes a light source configured to generate coherent pulses of light and a dispersive element positioned in the path of the coherent pulses of light, which is configured to reduce coherence of the pulses of light by mixing spatial and temporal characteristics of light distribution in the pulses of light. The illumination subsystem also includes an electro-optic modulator positioned in the path of the pulses of light exiting the dispersive element and which is configured to reduce the coherence of the pulses of light by temporally modulating the light distribution in the pulses of light. The illumination subsystem is configured to direct the pulses of light from the electro-optic modulator to a specimen positioned in the metrology system.

    Abstract translation: 提供了计量系统的照明子系统，计量系统和用于度量测量的照明样本的方法。 一个照明子系统包括被配置为产生相干的光脉冲的光源和位于相干脉冲光的路径中的色散元件，该色散元件被配置为通过将光分布的空间和时间特征混合在一起来减小光脉冲的相干性 光的脉冲。 照明子系统还包括位于离开色散元件的光的脉冲的路径中的电光调制器，其被配置为通过暂时调制光脉冲中的光分布来减小光脉冲的相干性。 照明子系统被配置为将来自电光调制器的光的脉冲引导到位于计量系统中的样本。

    Heterojunction bipolar transistor with reduced sub-collector length, method of manufacture and design structure
    5.
    发明授权
    Heterojunction bipolar transistor with reduced sub-collector length, method of manufacture and design structure 有权
    具有减小的集电极长度的异质结双极晶体管，制造方法和设计结构

    公开(公告)号：US09059138B2

    公开(公告)日：2015-06-16

    申请号：US13358180

    申请日：2012-01-25

    Applicant: Renata Camillo-Castillo ,  Zhong-Xiang He ,  Jeffrey B. Johnson ,  Qizhi Liu ,  Xuefeng Liu

    Inventor： Renata Camillo-Castillo ,  Zhong-Xiang He ,  Jeffrey B. Johnson ,  Qizhi Liu ,  Xuefeng Liu

    IPC: H01L29/737 ,  G06F17/50 ,  H01L21/331 ,  H01L29/417 ,  H01L29/66 ,  H01L29/10

    CPC classification number: H01L29/417 ,  H01L29/1004 ,  H01L29/66242 ,  H01L29/7371

    Abstract: A heterojunction bipolar transistor (HBT) structure, method of manufacturing the same and design structure thereof are provided. The HBT structure includes a semiconductor substrate having a sub-collector region therein. The HBT structure further includes a collector region overlying a portion of the sub-collector region. The HBT structure further includes an intrinsic base layer overlying at least a portion of the collector region. The HBT structure further includes an extrinsic base layer adjacent to and electrically connected to the intrinsic base layer. The HBT structure further includes an isolation region extending vertically between the extrinsic base layer and the sub-collector region. The HBT structure further includes an emitter overlying a portion of the intrinsic base layer. The HBT structure further includes a collector contact electrically connected to the sub-collector region. The collector contact advantageously extends through at least a portion of the extrinsic base layer.

    Abstract translation: 提供异质结双极晶体管（HBT）结构，其制造方法及其设计结构。 HBT结构包括其中具有亚集电极区域的半导体衬底。 HBT结构还包括覆盖子集电极区域的一部分的集电极区域。 HBT结构还包括覆盖集电极区域的至少一部分的本征基极层。 HBT结构还包括与本征基极层相邻并电连接的外部基极层。 HBT结构还包括在外部基极层和副集电极区之间垂直延伸的隔离区。 HBT结构还包括覆盖本征基极层的一部分的发射极。 HBT结构还包括电连接到子集电极区的集电极触点。 收集器触点有利地延伸穿过外部基极层的至少一部分。

    On-chip transmission line structures with balanced phase delay
    7.
    发明授权
    On-chip transmission line structures with balanced phase delay 有权
    具有平衡相位延迟的片上传输线结构

    公开(公告)号：US08860191B2

    公开(公告)日：2014-10-14

    申请号：US13168512

    申请日：2011-06-24

    Applicant: Hanyi Ding ,  Kai D. Feng ,  Zhong-Xiang He ,  Xuefeng Liu

    Inventor： Hanyi Ding ,  Kai D. Feng ,  Zhong-Xiang He ,  Xuefeng Liu

    IPC: H01L23/66 ,  H01P1/18 ,  H01L23/522

    CPC classification number: H01L23/5222 ,  H01L23/5225 ,  H01L23/66 ,  H01L2223/6638 ,  H01L2924/0002 ,  H01P1/184 ,  Y10T29/49117 ,  H01L2924/00

    Abstract: A transmission wiring structure, associated design structure and associated method for forming the same. A structure is disclosed having: a plurality of wiring levels formed on a semiconductor substrate; a pair of adjacent first and second signal lines located in the wiring levels, wherein the first signal line comprises a first portion formed on a first wiring level and a second portion formed on a second wiring level; a primary dielectric structure having a first dielectric constant located between the first portion and a ground shield; and a secondary dielectric structure having a second dielectric constant different than the first dielectric constant, the secondary dielectric structure located between the second portion and the ground shield, and the second dielectric layer extending co-planar with the second portion and having a length that is substantially the same as the second portion.

    Abstract translation: 一种传输线路结构，相关设计结构及其相关方法。 公开了一种结构，其具有：形成在半导体衬底上的多个布线层; 位于布线层中的一对相邻的第一和第二信号线，其中第一信号线包括形成在第一布线层上的第一部分和形成在第二布线层上的第二部分; 第一介电结构，其具有位于第一部分和接地屏蔽之间的第一介电常数; 以及具有不同于所述第一介电常数的第二介电常数的次级介电结构，所述第二介电结构位于所述第二部分和所述接地屏蔽之间，并且所述第二电介质层与所述第二部分共面延伸并且具有长度为 基本上与第二部分相同。

    Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure
    8.
    发明授权
    Junction field effect transistor structure with P-type silicon germanium or silicon germanium carbide gate(s) and method of forming the structure 有权
    具有P型硅锗或硅碳化硅栅的结型场效应晶体管结构和形成该结构的方法

    公开(公告)号：US08754455B2

    公开(公告)日：2014-06-17

    申请号：US12983489

    申请日：2011-01-03

    Applicant: Xuefeng Liu ,  Richard A. Phelps ,  Robert M. Rassel ,  Xiaowei Tian

    Inventor： Xuefeng Liu ,  Richard A. Phelps ,  Robert M. Rassel ,  Xiaowei Tian

    IPC: H01L29/80

    CPC classification number: H01L29/66916 ,  H01L27/14679 ,  H01L29/0649 ,  H01L29/16 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/808 ,  H01L29/8086

    Abstract: Disclosed are embodiments of a junction field effect transistor (JFET) structure with one or more P-type silicon germanium (SiGe) or silicon germanium carbide (SiGeC) gates (i.e., a SiGe or SiGeC based heterojunction JFET). The P-type SiGe or SiGeC gate(s) allow for a lower pinch off voltage (i.e., lower Voff) without increasing the on resistance (Ron). Specifically, SiGe or SiGeC material in a P-type gate limits P-type dopant out diffusion and, thereby ensures that the P-type gate-to-N-type channel region junction is more clearly defined (i.e., abrupt as opposed to graded). By clearly defining this junction, the depletion layer in the N-type channel region is extended. Extending the depletion layer in turn allows for a faster pinch off (i.e., requires lower Voff). P-type SiGe or SiGeC gate(s) can be incorporated into conventional lateral JFET structures and/or vertical JFET structures. Also disclosed herein are embodiments of a method of forming such a JFET structure.

    Abstract translation: 公开了具有一个或多个P型硅锗（SiGe）或硅碳化硅（SiGeC）栅极（即，SiGe或SiGeC基异质结JFET）的结型场效应晶体管（JFET）结构的实施例。 P型SiGe或SiGeC栅极允许较低的截止电压（即，较低的Voff），而不增加导通电阻（Ron）。 具体来说，P型栅极中的SiGe或SiGeC材料限制了P型掺杂物的扩散，从而确保了P型栅极与N型沟道区域结的关系更明确（即，与分级相反的突发性 ）。 通过明确定义该结，N型沟道区中的耗尽层延伸。 延伸耗尽层依次允许更快的夹断（即，需要更低的Voff）。 P型SiGe或SiGeC栅极可以结合到常规的横向JFET结构和/或垂直JFET结构中。 本文还公开了形成这种JFET结构的方法的实施例。

    Structure for on chip shielding structure for integrated circuits or devices on a substrate
    9.
    发明授权
    Structure for on chip shielding structure for integrated circuits or devices on a substrate 有权
    用于集成电路或基板上的器件的片上屏蔽结构的结构

    公开(公告)号：US08566759B2

    公开(公告)日：2013-10-22

    申请号：US12046750

    申请日：2008-03-12

    Applicant: Hanyi Ding ,  Kai D. Feng ,  Zhong-Xiang He ,  Xuefeng Liu

    Inventor： Hanyi Ding ,  Kai D. Feng ,  Zhong-Xiang He ,  Xuefeng Liu

    IPC: G06F17/50

    CPC classification number: G01R1/18 ,  G01R31/2851 ,  H01L23/552 ,  H01L23/66 ,  H01L2223/6627 ,  H01L2223/665 ,  H01L2924/0002 ,  H01L2924/1903 ,  H01L2924/19051 ,  H01L2924/3011 ,  H01L2924/00

    Abstract: A design structure is embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit. The design structure comprises: a conductive structure surrounding and accommodating a circuit or a circuit device arranged on a substrate and at least one feed through capacitor and one transmission line associated with the conductive structure and providing the power supply and signals to the circuit or circuit device respectively. The design structure also comprises a shielding structure surrounding a circuit or a circuit device arranged on a substrate and at least one feed through capacitor or a transmission line arranged on a side of the shielding structure.

    Abstract translation: 设计结构体现在用于设计，制造或测试集成电路的机器可读介质中。 该设计结构包括：围绕和容纳布置在基板上的电路或电路装置的导电结构以及与导电结构相关联的至少一个馈电电容器和一个传输线，并将电源和信号提供给电路或电路装置 分别。 该设计结构还包括围绕设置在基板上的电路或电路装置的屏蔽结构以及布置在屏蔽结构侧的电容器或传输线的至少一个馈电。

    METHOD OF OPTIMIZING AN OPTICAL PARAMETRIC MODEL FOR STRUCTURAL ANALYSIS USING OPTICAL CRITICAL DIMENSION (OCD) METROLOGY
    10.
    发明申请
    METHOD OF OPTIMIZING AN OPTICAL PARAMETRIC MODEL FOR STRUCTURAL ANALYSIS USING OPTICAL CRITICAL DIMENSION (OCD) METROLOGY 有权
    使用光学关键尺寸（OCD）方法优化结构分析的光学参数模型的方法

    公开(公告)号：US20120323356A1

    公开(公告)日：2012-12-20

    申请号：US13164398

    申请日：2011-06-20

    Applicant: Thaddeus G. Dziura ,  Yung-Ho Chuang ,  Bin-Ming Benjamin Tsai ,  Xuefeng Liu ,  John J. Hench

    Inventor： Thaddeus G. Dziura ,  Yung-Ho Chuang ,  Bin-Ming Benjamin Tsai ,  Xuefeng Liu ,  John J. Hench

    IPC: G06F19/00 ,  G06F17/50

    CPC classification number: G01B11/24 ,  G01B2210/56 ,  G01N21/47 ,  G01N21/956 ,  G01N2021/95615 ,  G03F7/70625 ,  G06F17/5009

    Abstract: Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.

    Abstract translation: 描述了使用光学关键尺寸度量结构分析的光学参数模型的优化。 一种方法包括确定适合结构参数的第一光学模型。 第一个光学模型拟合是基于结构的第一个模型的数量域。 对于第一量的量域确定第一近场光响应，并且针对量的第二个不同数量的量确定第二近场光响应。 比较第一和第二近场光响应，以定位用于结构参数的高光场强度的公共区域。 该结构的第一个模型被修改以提供第二个不同的结构模型。 基于结构的第二个模型，确定结构参数的第二个不同的光学模型拟合。

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