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    Chemical vapor deposition apparatus
    5.
    发明授权
    Chemical vapor deposition apparatus 有权
    化学气相沉积装置

    公开(公告)号：US06197121B1

    公开(公告)日：2001-03-06

    申请号：US09345032

    申请日：1999-06-30

    申请人： Alexander I. Gurary ,  Richard A. Stall ,  Robert F. Karlicek, Jr. ,  Peter Zawadzki ,  Thomas Salagaj

    发明人： Alexander I. Gurary ,  Richard A. Stall ,  Robert F. Karlicek, Jr. ,  Peter Zawadzki ,  Thomas Salagaj

    IPC分类号： C23C1600

    CPC分类号： C23C16/45574 ,  C23C16/45514 ,  C23C16/45565 ,  C23C16/45572 ,  C23C16/45591 ,  C23C16/4584 ,  C30B25/14

    摘要： Reactors for growing epitaxial layers on substrates are disclosed including rotatable substrate carriers and injectors for injecting gases into the reactor towards the substrates on the carriers and including a gas separator for separately maintaining various gases between gas inlets and the injector. Various reactor embodiments are disclosed including removable gas separators, and particular injectors which include cooling channels, as well as flow restrictors mounted within the reactors to restrict the flow of the gases to the substrates from the injector, and heaters mounted within the rotatable shell holding the substrate carriers so that the heaters can be accessed and removed through a lid forming a wall of the reactor.

    摘要翻译： 公开了用于在衬底上生长外延层的反应器，其包括可转动的衬底载体和用于将气体注入载体上的衬底的反应器的喷射器，并且包括用于分别保持气体入口和注射器之间的各种气体的气体分离器。 公开了各种反应器实施方案，包括可移除的气体分离器和包括冷却通道的特定注射器以及安装在反应器内的限流器，以限制从喷射器流到基板的气体，以及安装在可旋转外壳内的加热器， 衬底载体，使得可以通过形成反应器的壁的盖子来访问和移除加热器。

    Method and apparatus for evaluating electroluminescence properties of semiconductor materials and devices
    6.
    发明授权
    Method and apparatus for evaluating electroluminescence properties of semiconductor materials and devices 失效
    用于评估半导体材料和器件的电致发光性质的方法和装置

    公开(公告)号：US06670820B2

    公开(公告)日：2003-12-30

    申请号：US09683421

    申请日：2001-12-27

    申请人： Edward Brittain Stokes ,  Robert F. Karlicek, Jr.

    发明人： Edward Brittain Stokes ,  Robert F. Karlicek, Jr.

    IPC分类号： G01R3126

    CPC分类号： G01N21/66 ,  G01R31/2635 ,  G01R31/311

    摘要： An apparatus for evaluating an associated semiconductor sample having two electrically distinct regions with a junction region disposed therebetween includes a laser for injecting carriers into a sample region, an electrical bias for impressing electrical fields on the sample, and a detector for detecting luminescence. A second laser is provided for injecting carriers into a second sample region opposite the first region. A method includes the steps of: optically generating carriers in a region, generating a drift field in the region that effectuates carrier drift toward the junction, and measuring the optical radiation generated by carrier recombination in the junction region. Preferably, the method also includes optically generating carriers in a second region and generating a drift field in the second region that effectuates carrier drift toward the junction. Typically, the two drift fields are generated together by applying voltage between the two regions.

    摘要翻译： 一种用于评估具有两个具有连接区域的不同区域的相关联的半导体样品的装置，包括用于将载体注入样品区域的激光器，用于在样品上施加电场的电偏压，以及用于检测发光的检测器。 提供第二激光器用于将载体注入到与第一区域相对的第二样品区域中。 一种方法包括以下步骤：在区域中光学生成载流子，在该区域中产生漂移场，从而实现载流子向结的漂移，以及测量在结区域中由载流子复合产生的光辐射。 优选地，该方法还包括在第二区域中光学生成载流子并且在第二区域中产生漂移场，从而实现载流子向结的漂移。 通常，通过在两个区域之间施加电压来一起产生两个漂移场。

    Semiconductor device separation using a patterned laser projection
    7.
    发明授权
    Semiconductor device separation using a patterned laser projection 有权
    使用图案化激光投影的半导体器件分离

    公开(公告)号：US06413839B1

    公开(公告)日：2002-07-02

    申请号：US09178287

    申请日：1998-10-23

    申请人： Michael G. Brown ,  Ivan Eliashevich ,  Mark Gottfried ,  Robert F. Karlicek, Jr. ,  James E. Nering

    发明人： Michael G. Brown ,  Ivan Eliashevich ,  Mark Gottfried ,  Robert F. Karlicek, Jr. ,  James E. Nering

    IPC分类号： H01L2146

    CPC分类号： B23K26/0738 ,  B23K26/066 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L33/0095 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2924/0002 ,  Y10S438/94 ,  H01L2924/00

    摘要： A method for separating a semiconductor wafer into several thousand devices or dies by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it. A mechanical separation process completes the separation when only a partial cut is achieved by the patterned laser projection. The dies are then transferred to a grip ring for further processing.

    摘要翻译： 通过激光烧蚀将半导体晶片分离成数千个器件或管芯的方法。 半导体晶片最初被预处理以在晶片上产生多个器件，例如蓝色LED。 然后将晶片安装在涂有一般高水平粘合剂的胶带上。 然后将安装的晶片放置在真空吸盘（其本身位于计算机控制的定位台上），以在切割过程中将其保持在适当位置。 然后用保护层覆盖切割表面，以防止来自实际切割过程的流出物的污染。 生成激光束并通过光学元件和掩模以产生图案，例如线或多条线。 图案化的激光投影以基本上正常的角度指向晶片，并施加到晶片，直到通过它至少实现部分切割。 当通过图案化的激光投影仅实现部分切割时，机械分离过程完成分离。 然后将模具转移到握环以进一步处理。

    Selective growth of InP in device fabrication
    8.
    发明授权
    Selective growth of InP in device fabrication 失效
    INP在设备制造中的选择性增长

    公开(公告)号：US5153147A

    公开(公告)日：1992-10-06

    申请号：US661743

    申请日：1991-02-27

    申请人： Robert F. Karlicek, Jr.

    发明人： Robert F. Karlicek, Jr.

    IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L33/00 ,  H01S5/00 ,  H01S5/227

    CPC分类号： H01L33/0062 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01S5/227 ,  H01S5/2272 ,  Y10S148/065

    摘要： Selective epitaxy for indium phosphide in metalorganic chemical vapor deposition is possible by using a specific technique. In particular, a halogenated organic material is introduced with the InP precursors. This halogen-containing material should decompose to release halogen at approximately the same temperature that the metalorganic indium precursor decomposes. Through this process the manufacture of InP-based lasers is significantly enhanced and allows the use of reactive ion etching to form structures upon which InP regrowth is desired.

    摘要翻译： 通过使用特定技术，可以在金属有机化学气相沉积中选择性的磷化铟外延。 特别地，卤化有机材料与InP前体一起引入。 这种含卤素的材料应该在与金属有机铟前体分解的大致相同的温度下分解以释放卤素。 通过这个过程，基于InP的激光器的制造显着增强，并且允许使用反应离子蚀刻来形成期望InP再生长的结构。

    Radiation induced deposition of metal on semiconductor surfaces
    10.
    发明授权
    Radiation induced deposition of metal on semiconductor surfaces 失效
    辐射诱导金属在半导体表面上的沉积

    公开(公告)号：US4359485A

    公开(公告)日：1982-11-16

    申请号：US259428

    申请日：1981-05-01

    申请人： Vincent M. Donnelly ,  Robert F. Karlicek, Jr.

    发明人： Vincent M. Donnelly ,  Robert F. Karlicek, Jr.

    IPC分类号： H01L21/285 ,  C23C18/14 ,  H01L21/268 ,  H01L21/288 ,  B05D1/18 ,  B05D3/06

    CPC分类号： H01L21/288 ,  C23C18/14 ,  Y10S148/094 ,  Y10S148/14

    摘要： A metal layer is formed on a surface of a Group III-V compound semiconductor by placing the surface in contact with a metal-containing solution and directing laser radiation through the solution. The radiation has a wavelength which is absorbed in the surface, thereby thermally inducing a chemical reaction between the surface and the solution and causing metal from the solution to be deposited on the surface. Specific examples of the deposition of Pt, Au and Zn on InP and GaAs are described.

    摘要翻译： 通过将表面与含金属溶液接触并引导激光辐射通过溶液，在III-V族化合物半导体的表面上形成金属层。 辐射具有在表面中被吸收的波长，从而在表面和溶液之间引起化学反应，并导致来自溶液的金属沉积在表面上。 描述了在InP和GaAs上沉积Pt，Au和Zn的具体实例。