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    ETCHING AND PASSIVATING FOR HIGH ASPECT RATIO FEATURES
    1.
    发明申请
    ETCHING AND PASSIVATING FOR HIGH ASPECT RATIO FEATURES 审中-公开
    用于高比例特征的蚀刻和钝化

    公开(公告)号：US20080286978A1

    公开(公告)日：2008-11-20

    申请号：US11749957

    申请日：2007-05-17

    申请人： Rong Chen ,  Tae Won Kim ,  Nicolas Gani ,  Anisul H. Khan

    发明人： Rong Chen ,  Tae Won Kim ,  Nicolas Gani ,  Anisul H. Khan

    IPC分类号： H01L21/302

    CPC分类号： H01L21/30655

    摘要： An etch method includes etching a masked substrate to form a recess with a first sidewall in the substrate. A thin surface layer of the substrate on the first sidewall is then converted into a passivation layer. The masked substrate is etched again to deepen the recess in the substrate. A surface layer of the substrate on the second sidewall of the recess is then converted into a passivation layer. In one embodiment, upon removal of the passivation layers from both sidewalls, the first and second sidewalls of the high aspect ratio recess are aligned to within 10 Å of each other to provide a high aspect ratio recess having a vertical profile.

    摘要翻译： 蚀刻方法包括蚀刻被掩蔽的衬底以在衬底中形成具有第一侧壁的凹部。 然后将第一侧壁上的衬底的薄表面层转换成钝化层。 再次蚀刻掩蔽的衬底以加深衬底中的凹部。 然后将凹槽的第二侧壁上的衬底的表面层转换成钝化层。 在一个实施例中，在从两个侧壁去除钝化层时，高纵横比凹槽的第一和第二侧壁彼此对准，以提供具有垂直剖面的高纵横比凹槽。

    Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates
    2.
    发明授权
    Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates 有权
    具有用于蚀刻半导体衬底的脉冲样品偏置的脉冲等离子体系统

    公开(公告)号：US07718538B2

    公开(公告)日：2010-05-18

    申请号：US11677472

    申请日：2007-02-21

    申请人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

    发明人： Tae Won Kim ,  Kyeong-Tae Lee ,  Alexander Paterson ,  Valentin N. Todorov ,  Shashank C. Deshmukh

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31116 ,  C23F4/00 ,  H01J37/32009 ,  H01L21/3065 ,  H01L21/32137

    摘要： A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negative bias is applied to the sample during the ON state of each duty cycle, while a zero bias is applied to the sample during the OFF state of each duty cycle. In another embodiment, a first portion of a sample is removed by applying a continuous plasma process. The continuous plasma process is then terminated and a second portion of the sample is removed by applying a pulsed plasma process.

    摘要翻译： 描述了具有用于蚀刻半导体结构的脉冲样本偏置的脉冲等离子体系统。 在一个实施例中，通过施加脉冲等离子体处理来去除样品的一部分，其中脉冲等离子体处理包括多个占空比。 在每个占空比的导通状态期间，向样品施加负偏压，而在每个占空比的OFF状态期间，零样本被施加到样品。 在另一个实施方案中，通过施加连续的等离子体工艺来除去样品的第一部分。 然后连续等离子体处理被终止，并且通过施加脉冲等离子体工艺来除去样品的第二部分。

    Etch resistant wafer processing apparatus and method for producing the same
    3.
    发明授权
    Etch resistant wafer processing apparatus and method for producing the same 失效
    耐蚀刻晶片处理装置及其制造方法

    公开(公告)号：US07446284B2

    公开(公告)日：2008-11-04

    申请号：US11322809

    申请日：2005-12-30

    申请人： Wei Fan ,  Ajit Sane ,  Jeffrey Lennartz ,  Tae Won Kim

    发明人： Wei Fan ,  Ajit Sane ,  Jeffrey Lennartz ,  Tae Won Kim

    IPC分类号： H05B3/68 ,  H01L23/58

    CPC分类号： H01L21/68757 ,  H01L21/67011 ,  H01L21/67103 ,  Y10S269/903 ,  Y10T279/23

    摘要： A wafer processing apparatus is fabricated by depositing a film electrode onto the surface of a base substrate, the structure is then overcoated with a protective coating film layer comprising at least one of a nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals, and combinations thereof. The film electrode has a coefficient of thermal expansion (CTE) that closely matches the CTE of the underlying base substrate layer as well as the CTE of the protective coating layer.

    摘要翻译： 通过将膜电极沉积在基底表面上来制造晶片处理装置，然后用包括氮化物，碳化物，碳氮化物或氮氧化物中的至少一种的保护涂膜层进行外涂，所述元素选自： B，Al，Si，Ga，难熔硬金属，过渡金属及其组合。 膜电极具有与下层基底层的CTE以及保护涂层的CTE密切匹配的热膨胀系数（CTE）。

    Method for sevicing facsimile using wireless local loop system
    4.
    发明授权
    Method for sevicing facsimile using wireless local loop system 失效
    使用无线本地环路系统清除传真的方法

    公开(公告)号：US06873859B2

    公开(公告)日：2005-03-29

    申请号：US09748239

    申请日：2000-12-27

    申请人： Tae Won Kim

    发明人： Tae Won Kim

    IPC分类号： H04B7/24 ,  H04N1/00 ,  H04W76/02 ,  H04W84/14 ,  H04W88/08 ,  H04W92/02 ,  H04W92/18 ,  H04M1/00

    CPC分类号： H04N1/00315 ,  H04N1/00281 ,  H04N1/00302 ,  H04N2201/0024 ,  H04W76/10 ,  H04W84/14 ,  H04W88/08 ,  H04W92/02 ,  H04W92/18

    摘要： A method for servicing facsimile using a WLL system in which facsimile data are transmitted in real time after a Fixed Subscriber Unit FSU and a Wireless Local Loop WLL Processing Block of the Code Division Multiple Access CDMA type WLL system for converting a service option to a facsimile call in state that a voice call between the transmitting side and the receiving side is set. In a WLL networks including at least one or more FSUs and Base Transceiver Stations BTSs, a WLL Processing Block, and a Public Switched Telephone Network PSTN, a method for servicing facsimile using WLL system comprising steps of requesting call establishment of a second facsimile telephone connected with the PSTN in a first facsimile telephone connected with the FSU, responding to the request of call establishment automatically or manually in the second facsimile telephone, and converting a service mode of the first facsimile telephone to a data mode in case that a facsimile tone provided from the second facsimile telephone to the first facsimile telephone is detected after the response and transmitting data from the first facsimile telephone to the second facsimile telephone. Accordingly, it is possible to provide a facsimile service using a facsimile telephone with performing a digital facsimile service and a service option within the WLL network without adding an extra network element.

    摘要翻译： 一种使用WLL系统来传真的方法，其中在固定用户单元FSU和用于将服务选项转换为传真的码分多址CDMA型WLL系统的无线本地环路WLL处理块之后实时传输传真数据 呼叫在发送侧和接收侧之间的语音呼叫被设置。 在包括至少一个或多个FSU和基站收发站BTS，WLL处理块和公共交换电话网PSTN的WLL网络中，使用WLL系统对传真进行服务的方法包括以下步骤：请求呼叫建立连接的第二传真电话 PSTN中的第一传真电话与FSU连接，在第二传真电话中自动或手动响应呼叫建立的请求，并且在提供传真音的情况下将第一传真电话的服务模式转换为数据模式 在从第一传真电话到第二传真电话的响应和数据传送之后，检测从第二传真电话到第一传真电话。 因此，可以使用传真电话提供在WLL网络内执行数字传真服务和服务选项的传真服务，而不增加额外的网络元件。

    Silicon nitride dry trim without top pulldown
    7.
    发明授权
    Silicon nitride dry trim without top pulldown 有权
    氮化硅干式装饰，无顶部下拉

    公开(公告)号：US08431461B1

    公开(公告)日：2013-04-30

    申请号：US13329035

    申请日：2011-12-16

    申请人： Qinghua Zhong ,  Yoshie Kimura ,  Tae Won Kim ,  Qian Fu ,  Gladys Lo ,  Ganesh Upadhyaya ,  Yoko Yamaguchi

    发明人： Qinghua Zhong ,  Yoshie Kimura ,  Tae Won Kim ,  Qian Fu ,  Gladys Lo ,  Ganesh Upadhyaya ,  Yoko Yamaguchi

    IPC分类号： H01L21/336

    CPC分类号： H01L29/66477 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/78

    摘要： A method for forming devices with silicon gates over a substrate is provided. Silicon nitride spacers are formed on sides of the silicon gates. An ion implant is provided using the silicon nitride spacers as masks to form ion implant regions. A nonconformal layer is selectively deposited over the spacers and gates that selectively deposits a thicker layer on tops of the gates and spacers and between spacers than on sidewalls of the silicon nitride spacers. Sidewalls of the nonconformal layer are etched away on sidewalls of the silicon nitride spacers. The silicon nitride spacers are trimmed.

    摘要翻译： 提供了一种用于在衬底上形成具有硅栅极的器件的方法。 氮化硅间隔物形成在硅栅极的侧面上。 使用氮化硅间隔物作为掩模提供离子注入以形成离子注入区域。 非限制性层被选择性地沉积在间隔物和浇口上，所述间隔物和浇口选择性地在栅极和间隔物的顶部和间隔物之间​​沉积较厚的层，而不是在氮化硅间隔物的侧壁上沉积。 在氮化硅间隔物的侧壁上蚀刻掉非共形层的侧壁。 修整氮化硅间隔物。

    COUNTERFEIT PREVENTION PAPER AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    COUNTERFEIT PREVENTION PAPER AND MANUFACTURING METHOD THEREOF 有权
    防伪纸及其制造方法

    公开(公告)号：US20090047488A1

    公开(公告)日：2009-02-19

    申请号：US12189074

    申请日：2008-08-08

    申请人： Yang-Kyu Choi ,  Oktay Yarimaga ,  Kuk-Hwan Kim ,  Hyun Gyu Park ,  Tae Won Kim ,  Yun Kyung Jung

    发明人： Yang-Kyu Choi ,  Oktay Yarimaga ,  Kuk-Hwan Kim ,  Hyun Gyu Park ,  Tae Won Kim ,  Yun Kyung Jung

    IPC分类号： B32B3/10 ,  B05D1/36

    CPC分类号： D21H21/44 ,  B42D15/0033 ,  B42D25/29 ,  Y10T428/24934

    摘要： The present invention relates to a counterfeit prevention paper and manufacturing method thereof, and more particularly to currency, securities, official document and several certificates, etc.The counterfeit prevention paper according to the present invention comprises a paper and a thermopaint layer which is formed on a paper and is discolored according to a temperature.The counterfeit prevention paper according to the present invention can detect easily a counterfeit by an unaided eye. Also, a function for preventing a counterfeit is not copied by a counterfeit device, thus the counterfeit prevent paper according to the present invention can improve a reliability of various official documents and several certificates, etc.

    摘要翻译： 本发明涉及防伪纸及其制造方法，更具体地涉及货币，证券，官方文件和若干证书等。根据本发明的防伪纸包括纸和热电影层，其形成在 一张纸，根据温度变色。 根据本发明的防伪纸可以通过肉眼容易地检测伪造的伪造品。 此外，防伪品的功能不被仿冒装置复制，因此根据本发明的防伪纸可以提高各种官方文件和几种证书等的可靠性。