摘要:
A light emitting device including a light emitting layer that is provided between a first face and a second face, a first electrode that is provided on the first face and is electrically coupled to the light emitting layer, a second electrode that is provided on the second face and is electrically coupled to the light emitting layer, and a non-selected electrode that is provided on the first face and is in a state not electrically coupled to a potential supply source.
摘要:
A light-emitting device assembly includes a light-emitting device including a light-emitting layer, a first electrode, and a second electrode, and a first connecting portion and a second connecting portion provided on a base, in which the first connecting portion and the second connecting portion are separated from each other by a separation portion, the base is exposed from the separation portion, a wide portion is on a first connecting portion side of the separation portion, the first electrode includes a first portion and a second portion, the second portion of the first electrode is connected to the first connecting portion, the first portion of the first electrode extends from the second portion of the first electrode, and an orthographic projection image of the first portion of the first electrode with respect to the base and the wide portion of the separation portion overlap with each other at least in part.
摘要:
A light emitting device includes a light emitting part 21, a black layer 51, and a light diffusion part 41 that is formed on or above the black layer 51. The black layer 51 is provided with an opening part 53 that allows light emitted from the light emitting part to pass through it. Then, light having passed through the opening part 53 passes through the light diffusion part 41.
摘要:
There is provided a light emitting apparatus, including a plurality of light emitting elements having biased light properties; and a mounting substrate where the light emitting elements are arranged such that the biased light properties are complemented within a group including at least two light emitting elements among a plurality of the light emitting elements. Also, there are provided a light emitting unit, a display apparatus, an electronic device and a light emitting element using a plurality of point light sources.
摘要:
A light emitting device of one embodiment of the present disclosure includes: a substrate; a light emitting element disposed above the substrate, and having electrodes on respective upper surface and lower surface of the light emitting element; and a light shielding layer provided between the substrate and the light emitting element.
摘要:
[Solving Means] A semiconductor unit includes a substrate, a semiconductor device, and a plating layer. The semiconductor device includes a semiconductor layer and one or more electrodes, the one or more electrodes being connected to the semiconductor layer and including a platinum-group element as a main material. The plating layer bonds the substrate and the electrode.
摘要:
There is provided a light emitting apparatus, including a plurality of light emitting elements having biased light properties; and a mounting substrate where the light emitting elements are arranged such that the biased light properties are complemented within a group including at least two light emitting elements among a plurality of the light emitting elements. Also, there are provided a light emitting unit, a display apparatus, an electronic device and a light emitting element using a plurality of point light sources.
摘要:
There is provided a display device including a plurality of unit regions disposed adjacent to each other, a first region that is provided in each of the unit regions, and emits first light, and a second region that is provided outside the first region in each of the unit regions, and emits second light. The second light is different from the first light in at least one of luminance, wavelength, or surface-reflection component, the second regions are provided between adjacent ones of the first regions, and a difference in luminance, wavelength, or surface-reflection component between the second light to be emitted from adjacent ones of the unit regions is smaller than a difference in luminance, wavelength, or surface-reflection component between the first light and the second light in a same one of the unit regions.
摘要:
A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.
摘要:
A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.