公开(公告)号：US20120138898A1

公开(公告)日：2012-06-07

申请号：US13310522

申请日：2011-12-02

申请人： Masahiko HATA ,  Tomoyuki TAKADA ,  Sadanori YAMANAKA ,  Taro ITATANI

发明人： Masahiko HATA ,  Tomoyuki TAKADA ,  Sadanori YAMANAKA ,  Taro ITATANI

IPC分类号： H01L31/0352

CPC分类号： H01L27/1446 ,  G01J5/024 ,  H01L31/0392 ,  H01L31/0543 ,  H01L31/1035 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

摘要： A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat.

摘要翻译： 传感器包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由第3-5族化合物半导体晶格匹配或伪晶格匹配种子构件并且能够在吸收光或热时产生载体的光热吸收体，其中光热吸收体输出响应于 入射到光热吸收器中的入射光或被加到光热吸收器上的热量。 半导体晶片包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由3-5族化合物半导体晶格匹配或伪晶格匹配种子构件制成并且能够在吸收光或热时产生载体的光热吸收剂。

公开(公告)号：US20120061730A1

公开(公告)日：2012-03-15

申请号：US13301272

申请日：2011-11-21

申请人： Sadanori YAMANAKA ,  Masahiko HATA ,  Noboru FUKUHARA

发明人： Sadanori YAMANAKA ,  Masahiko HATA ,  Noboru FUKUHARA

IPC分类号： H01L29/70 ,  H01L21/20 ,  H01L29/06

CPC分类号： H01L29/7371 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02521 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/66318 ,  H01L31/0304 ,  H01L31/03044 ,  H01L31/0312 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

摘要： There is provided a semiconductor wafer including a base wafer that has an impurity region in which an impurity atom has been introduced into silicon, a plurality of seed bodies provided in contact with the impurity region, and a plurality of compound semiconductors each provided in contact with the corresponding seed bodies and lattice-matched or pseudo-lattice-matched to the corresponding seed bodies. The semiconductor wafer can further include an inhibitor provided on the base wafer and in which a plurality of apertures exposing at least a part of the impurity region are provided.

摘要翻译： 提供了一种半导体晶片，其包括：基底晶片，其具有将杂质原子引入到硅中的杂质区域，与杂质区域接触的多个晶种;以及多个化合物半导体，各自与 相应的种子体和与对应的种子晶格匹配或伪晶格匹配。 半导体晶片还可以包括设置在基底晶片上的抑制剂，其中设置暴露至少一部分杂质区域的多个孔。

公开(公告)号：US20120267688A1

公开(公告)日：2012-10-25

申请号：US13495746

申请日：2012-06-13

申请人： Sadanori YAMANAKA ,  Tomoyuki TAKADA ,  Masahiko HATA

发明人： Sadanori YAMANAKA ,  Tomoyuki TAKADA ,  Masahiko HATA

IPC分类号： H01L29/267 ,  H01L21/20 ,  H01L29/06

CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02546

摘要： To improve the flatness of the surface and improve the reliability of a semiconductor device when expitaxially growing semiconductor crystal layers of different types on a single silicon wafer, provided is a semiconductor wafer which includes: a base wafer having a silicon crystal in the surface thereof, the silicon crystal having a first dent and a second dent; a first Group IVB semiconductor crystal located in the first dent and exposed; a second Group IVB semiconductor crystal located in the second dent; and a Group III-V compound semiconductor crystal located above the second Group IVB semiconductor crystal in the second dent and exposed.

摘要翻译： 为了提高表面的平坦度，提高在单晶硅晶片上外延生长不同种类的半导体晶体层时的半导体器件的可靠性，提供了一种半导体晶片，其包括：在其表面具有硅晶体的基底晶片， 所述硅晶体具有第一凹陷和第二凹陷; 第一组IVB半导体晶体位于第一凹陷中并暴露; 位于第二凹陷中的第二组IVB半导体晶体; 以及位于第二凹陷中的第二IVB族半导体晶体上方并暴露的III-V族化合物半导体晶体。

公开(公告)号：US20120086044A1

公开(公告)日：2012-04-12

申请号：US13327313

申请日：2011-12-15

申请人： Masahiko HATA ,  Hiroyuki SAZAWA ,  Sadanori YAMANAKA

发明人： Masahiko HATA ,  Hiroyuki SAZAWA ,  Sadanori YAMANAKA

IPC分类号： H01L33/30

CPC分类号： H01L27/15 ,  B41J2/45 ,  H01L27/156

摘要： There is provided a light emitting device that includes a base wafer that contains silicon, a plurality of seed bodies provided in contact with the base wafer, and a plurality of Group 3-5 compound semiconductors that are each lattice-matched or pseudo-lattice-matched to corresponding seed bodies. In the device, a light emitting element that emits light in response to current supplied thereto is formed in at least one of the plurality of the Group 3-5 compound semiconductors, and a current limiting element that limits the current supplied to the light emitting element is formed in at least one of the plurality of the Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor in which the light emitting element is formed.

摘要翻译： 提供了一种发光器件，其包括含有硅的基底晶片，与基底晶片接触地设置的多个晶种，以及多个第3-5组化合物半导体，其各自是晶格匹配的或伪晶格的， 与相应的种子体相匹配。 在该装置中，响应于供给的电流而发光的发光元件形成在多个第3-5组化合物半导体中的至少一个中，限流元件限制供给到发光元件的电流 形成在其中形成有发光元件的组3-5化合物半导体之外的多个3-5族化合物半导体中的至少一种。

公开(公告)号：US20120319171A1

公开(公告)日：2012-12-20

申请号：US13594389

申请日：2012-08-24

申请人： Tomoyuki TAKADA ,  Sadanori YAMANAKA

发明人： Tomoyuki TAKADA ,  Sadanori YAMANAKA

IPC分类号： H01L29/26 ,  H01L21/20

CPC分类号： H01L21/02543 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02441 ,  H01L21/0245 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02502 ,  H01L21/02546 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/66318

摘要： A semiconductor wafer includes a base wafer, a first crystal layer, a second crystal layer and a third crystal layer. The first crystal layer has a first surface having a same orientation as the base wafer, and a second surface having a different orientation from the first surface, the second crystal layer has a third surface having the same orientation as the first surface, and a fourth surface having the same orientation as the second surface, the third crystal layer is in contact with a part of the third surface and the fourth surface. A thickness ratio of the second crystal layer in a region adjoining the first surface to a region adjoining the second surface is larger than a thickness ratio of the third crystal layer in a region adjoining the third surface to a region adjoining the fourth surface.

摘要翻译： 半导体晶片包括基底晶片，第一晶体层，第二晶体层和第三晶体层。 第一晶体层具有与基底晶片相同的取向的第一表面和与第一表面取向不同的第二表面，第二晶体层具有与第一表面相同取向的第三表面， 表面具有与第二表面相同的取向，第三晶体层与第三表面和第四表面的一部分接触。 第二晶体层的与第一表面相邻的区域与邻接第二表面的区域的厚度比大于与第三表面相邻的区域中的第三晶体层与邻接第四表面的区域的厚度比。

公开(公告)号：US20120319170A1

公开(公告)日：2012-12-20

申请号：US13594442

申请日：2012-08-24

申请人： Masahiko HATA ,  Sadanori YAMANAKA ,  Tomoyuki TAKADA ,  Kazuhiko HONJO

发明人： Masahiko HATA ,  Sadanori YAMANAKA ,  Tomoyuki TAKADA ,  Kazuhiko HONJO

IPC分类号： H01L29/737 ,  H01L21/20

CPC分类号： H01L27/0605 ,  H01L23/3121 ,  H01L23/3171 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05569 ,  H01L2224/05571 ,  H01L2224/13023 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： Electronic device is provided, including: a base wafer whose surface is made of silicon crystal; a Group 3-5 compound semiconductor crystal formed directly or indirectly on partial region of the silicon crystal; an electronic element including a portion of the Group 3-5 compound semiconductor crystal as active layer; an insulating film formed directly or indirectly on the base wafer and covering the electronic element; an electrode formed directly or indirectly on the insulating film; a first coupling wiring extending through the insulating film, having at least a portion thereof formed directly or indirectly on the insulating film, and electrically coupling the electronic element with the electrode; a passive element formed directly or indirectly on the insulating film; a second coupling wiring extending through the insulating film, having at least a portion thereof formed directly or indirectly on the insulating film, and electrically coupling the electronic element with the passive element.

摘要翻译： 提供电子器件，其包括：其表面由硅晶体制成的基底晶片; 在硅晶体的部分区域上直接或间接形成的3-5族化合物半导体晶体; 包含部分3-5族化合物半导体晶体作为活性层的电子元件; 直接或间接地形成在基底晶片上并覆盖电子元件的绝缘膜; 在绝缘膜上直接或间接形成的电极; 延伸穿过所述绝缘膜的第一耦合布线，其至少一部分直接或间接地形成在所述绝缘膜上，并且将所述电子元件与所述电极电耦合; 绝缘膜上直接或间接形成的无源元件; 延伸穿过绝缘膜的第二耦合布线，其至少一部分直接或间接地形成在绝缘膜上，并将电子元件与无源元件电连接。

公开(公告)号：US20100059772A1

公开(公告)日：2010-03-11

申请号：US12225697

申请日：2007-03-27

申请人： Sadanori YAMANAKA

发明人： Sadanori YAMANAKA

IPC分类号： H01L33/00

CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a light emitting device. The light emitting device has a light distribution in which a light distribution I (θ, φ) obtained when light emitted from a chip of the light emitting device is directly measured is not dependent on a direction φ and is substantially represented by I (θ, φ)=I (θ). I (θ, φ) represents a light intensity distribution in a direction (θ, φ), θ represents an angle from a direction of a normal to a light extraction surface of the light emitting device (0≦θ≦90°), φ represents a rotation angle around the normal (0≦φ≦360°), and I (θ) represents a monotone decreasing function with which 0 is approached when θ=90° is satisfied. In the light emitting device, of a structural body constructing the chip of the light emitting device, with regard to a size of a portion of the structural body which is transparent to light emitted from a light emitting layer, a ratio (an aspect ratio) between the size in a lateral direction and the size in a thickness direction is not less than 5 and a structure having a light scattering function is provided on a surface of the light emitting device chip or in an interior of the transparent portion of the structural body.

摘要翻译： 本发明提供一种发光装置。 发光装置具有光分布，其中直接测量从发光器件的芯片发出的光所获得的光分布I（＆amp;θ; ph ph）不依赖于方向＆phgr; 并且基本上由I（＆Thetas;＆phgr;）= I（＆thetas;）表示。 I（＆thetas;＆phgr。）表示方向（＆thetas;＆phgr;），＆thetas的光强度分布; 表示从发光器件的法线方向到光提取表面的角度（0＆amp; nlE;＆hell;＆nlE; 90°），＆phgr; 表示正常（0＆nlE;＆phgr;＆nlE; 360°）周围的旋转角度，I（＆Thetas;）表示满足＆amp; t = 90°的单调递减函数，接近0。 在构成发光装置的芯片的结构体的发光装置中，对于从发光层发出的光透明的结构体的一部分的尺寸，比率（纵横比） 在横向尺寸和厚度方向之间的尺寸不小于5，并且在发光元件芯片的表面上或在结构体的透明部分的内部设置具有光散射功能的结构 。