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    LIGHT EMITTING DEVICE AND METHOD OF PRODUCING LIGHT EMITTING DEVICE
    1.
    发明申请
    LIGHT EMITTING DEVICE AND METHOD OF PRODUCING LIGHT EMITTING DEVICE 审中-公开
    发光装置及其制造发光装置的方法

    公开(公告)号：US20120086044A1

    公开(公告)日：2012-04-12

    申请号：US13327313

    申请日：2011-12-15

    申请人： Masahiko HATA ,  Hiroyuki SAZAWA ,  Sadanori YAMANAKA

    发明人： Masahiko HATA ,  Hiroyuki SAZAWA ,  Sadanori YAMANAKA

    IPC分类号： H01L33/30

    CPC分类号： H01L27/15 ,  B41J2/45 ,  H01L27/156

    摘要： There is provided a light emitting device that includes a base wafer that contains silicon, a plurality of seed bodies provided in contact with the base wafer, and a plurality of Group 3-5 compound semiconductors that are each lattice-matched or pseudo-lattice-matched to corresponding seed bodies. In the device, a light emitting element that emits light in response to current supplied thereto is formed in at least one of the plurality of the Group 3-5 compound semiconductors, and a current limiting element that limits the current supplied to the light emitting element is formed in at least one of the plurality of the Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor in which the light emitting element is formed.

    摘要翻译： 提供了一种发光器件，其包括含有硅的基底晶片，与基底晶片接触地设置的多个晶种，以及多个第3-5组化合物半导体，其各自是晶格匹配的或伪晶格的， 与相应的种子体相匹配。 在该装置中，响应于供给的电流而发光的发光元件形成在多个第3-5组化合物半导体中的至少一个中，限流元件限制供给到发光元件的电流 形成在其中形成有发光元件的组3-5化合物半导体之外的多个3-5族化合物半导体中的至少一种。

    SENSOR, SEMICONDUCTOR WAFER, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER
    2.
    发明申请
    SENSOR, SEMICONDUCTOR WAFER, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER 有权
    传感器，半导体波形和半导体波形的制造方法

    公开(公告)号：US20120138898A1

    公开(公告)日：2012-06-07

    申请号：US13310522

    申请日：2011-12-02

    申请人： Masahiko HATA ,  Tomoyuki TAKADA ,  Sadanori YAMANAKA ,  Taro ITATANI

    发明人： Masahiko HATA ,  Tomoyuki TAKADA ,  Sadanori YAMANAKA ,  Taro ITATANI

    IPC分类号： H01L31/0352

    CPC分类号： H01L27/1446 ,  G01J5/024 ,  H01L31/0392 ,  H01L31/0543 ,  H01L31/1035 ,  H01L31/1852 ,  Y02E10/52 ,  Y02E10/544 ,  Y02P70/521

    摘要： A sensor includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat, where the photothermal absorber outputs an electric signal in response to incident light to be introduced into the photothermal absorber or heat to be applied to the photothermal absorber. A semiconductor wafer includes: a base wafer containing silicon; a seed member provided directly or indirectly on the base wafer; and a photothermal absorber that is made of a Group 3-5 compound semiconductor lattice-matching or pseudo lattice-matching the seed member and being capable of generating a carrier upon absorbing light or heat.

    摘要翻译： 传感器包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由第3-5族化合物半导体晶格匹配或伪晶格匹配种子构件并且能够在吸收光或热时产生载体的光热吸收体，其中光热吸收体输出响应于 入射到光热吸收器中的入射光或被加到光热吸收器上的热量。 半导体晶片包括：含有硅的基底晶片; 种子构件直接或间接地设置在基底晶片上; 以及由3-5族化合物半导体晶格匹配或伪晶格匹配种子构件制成并且能够在吸收光或热时产生载体的光热吸收剂。

    SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER
    4.
    发明申请
    SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER 有权
    半导体晶体管，半导体器件及其制造方法

    公开(公告)号：US20120267688A1

    公开(公告)日：2012-10-25

    申请号：US13495746

    申请日：2012-06-13

    申请人： Sadanori YAMANAKA ,  Tomoyuki TAKADA ,  Masahiko HATA

    发明人： Sadanori YAMANAKA ,  Tomoyuki TAKADA ,  Masahiko HATA

    IPC分类号： H01L29/267 ,  H01L21/20 ,  H01L29/06

    CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02546

    摘要： To improve the flatness of the surface and improve the reliability of a semiconductor device when expitaxially growing semiconductor crystal layers of different types on a single silicon wafer, provided is a semiconductor wafer which includes: a base wafer having a silicon crystal in the surface thereof, the silicon crystal having a first dent and a second dent; a first Group IVB semiconductor crystal located in the first dent and exposed; a second Group IVB semiconductor crystal located in the second dent; and a Group III-V compound semiconductor crystal located above the second Group IVB semiconductor crystal in the second dent and exposed.

    摘要翻译： 为了提高表面的平坦度，提高在单晶硅晶片上外延生长不同种类的半导体晶体层时的半导体器件的可靠性，提供了一种半导体晶片，其包括：在其表面具有硅晶体的基底晶片， 所述硅晶体具有第一凹陷和第二凹陷; 第一组IVB半导体晶体位于第一凹陷中并暴露; 位于第二凹陷中的第二组IVB半导体晶体; 以及位于第二凹陷中的第二IVB族半导体晶体上方并暴露的III-V族化合物半导体晶体。

    OPTICAL DEVICE, SEMICONDUCTOR WAFER, METHOD OF PRODUCING OPTICAL DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER
    6.
    发明申请
    OPTICAL DEVICE, SEMICONDUCTOR WAFER, METHOD OF PRODUCING OPTICAL DEVICE, AND METHOD OF PRODUCING SEMICONDUCTOR WAFER 失效
    光学器件，半导体器件，制造光学器件的方法和生产半导体器件的方法

    公开(公告)号：US20120068207A1

    公开(公告)日：2012-03-22

    申请号：US13310451

    申请日：2011-12-02

    申请人： Masahiko HATA ,  Sadanori Yamanaka ,  Tomoyuki Takada

    发明人： Masahiko HATA ,  Sadanori Yamanaka ,  Tomoyuki Takada

    IPC分类号： H01L33/26 ,  H01L31/18 ,  H01L21/20 ,  H01L31/0264

    CPC分类号： H01L27/1446 ,  H01L21/02439 ,  H01L21/02441 ,  H01L21/02502 ,  H01L21/02521 ,  H01L21/02524 ,  H01L27/14601 ,  H01L27/15 ,  H01L27/156 ,  H01L29/161 ,  H01L29/267 ,  H01L29/7371 ,  H01S5/021

    摘要： Provided is an optical device including a base wafer containing silicon, a plurality of seed crystals disposed on the base wafer, and a plurality of Group 3-5 compound semiconductors lattice-matching or pseudo lattice-matching the plurality of seed crystals. At least one of the Group 3-5 compound semiconductors has a photoelectric semiconductor formed therein, the photoelectric semiconductor including a light emitting semiconductor that emits light in response to a driving current supplied thereto or a light receiving semiconductor that generates a photocurrent in response to light applied thereto, and at least one of the plurality of Group 3-5 compound semiconductors other than the Group 3-5 compound semiconductor having the photoelectric semiconductor has a heterojunction transistor formed therein.

    摘要翻译： 提供了一种光学器件，其包括含有硅的基底晶片，设置在基底晶片上的多个晶种，以及多个晶格匹配或伪晶格匹配多个晶种的3-5族化合物半导体。 第3-5组化合物半导体中的至少一个具有形成在其中的光电半导体，该光电半导体包括响应于提供的驱动电流而发光的发光半导体或响应于光产生光电流的光接收半导体 并且除了具有光电半导体的组3-5化合物半导体之外的多个3-5族化合物半导体中的至少一个具有形成在其中的异质结晶体管。