LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20220384673A1

    公开(公告)日:2022-12-01

    申请号:US17580059

    申请日:2022-01-20

    IPC分类号: H01L33/00 H01L33/02

    摘要: A method for manufacturing a light emitting element includes forming a first semiconductor structure including a first semiconductor layer doped with a first conductivity type dopant disposed on a base substrate, a light emitting layer disposed on the first semiconductor layer, and a second semiconductor layer disposed on the light emitting layer and doped with a second conductivity type dopant; forming a second semiconductor structure spaced apart from another second semiconductor structure on the base substrate by etching the first semiconductor structure in a direction perpendicular to a surface of the base substrate; and activating a second conductivity type dopant in the second semiconductor layer of the second semiconductor structure to form a light emitting element core.

    Display device
    7.
    发明授权

    公开(公告)号:US11094741B2

    公开(公告)日:2021-08-17

    申请号:US16738490

    申请日:2020-01-09

    IPC分类号: H01L27/15 H01L33/50 H01L33/58

    摘要: A display device includes a substrate; a first electrode and a second electrode arranged to be spaced apart from each other on the substrate; a first insulating layer on the substrate; a light emitting element on the first insulating layer, located between the first electrode and the second electrode, and including a first end portion and a second end portion; a third electrode on the substrate and electrically connected to the first electrode and the first end portion; a fourth electrode on the substrate and electrically connected to the second electrode and the second end portion; a second insulating layer on the substrate and covering the light emitting element, the third electrode, and the fourth electrode; and a light diffusion layer on the second insulating layer and including a light diffusion particle.