Abstract:
A light emitting diode (LED) package includes: a package substrate having a first electrode structure and a second electrode structure; an LED chip disposed above a first surface of the package substrate and having a first electrode attached to the first electrode structure and a second electrode attached to the second electrode structure; a reflective layer disposed above the first surface of the package substrate to be separated from the LED chip, having a thickness less than a thickness of the LED chip, and configured to reflect light emitted from the LED chip to a given direction, wherein the wavelength converter has an upper surface substantially parallel to the first surface of the package substrate and a side surface inclined towards the upper surface of the wavelength converter.
Abstract:
A method of manufacturing a white light emitting device includes dividing a phosphor sheet into phosphor film units to be applied to individual light emitting diode (LED) devices, measuring light conversion characteristics of the respective phosphor film units, classifying the phosphor film units of the phosphor sheet into a plurality of groups according to measurement results of the light conversion characteristics and combining the phosphor film units classified into the plurality of groups and an LED device having predetermined light characteristics so as to obtain target color characteristics.
Abstract:
A semiconductor light emitting device package includes: a light emitting device; a wavelength conversion unit formed in a path of light emitted from the light emitting device and including a mixture of a wavelength conversion material and a glass material; and a reflective film disposed on an upper surface of the wavelength conversion unit and reflecting a partial amount of light emitted from the light emitting device and allowing a partial amount of light emitted from the light emitting device to be transmitted therethrough.
Abstract:
Provided is a bonding wire for a semiconductor package and a semiconductor package including the same. The bonding wire for the semiconductor package may include a core portion including silver (Ag), and a shell layer surrounding the core portion, having a thickness of 2 nm to 23 nm, and including gold (Au). The semiconductor package may include a package body having a first electrode structure and a second electrode structure, a semiconductor light emitting device comprising a first electrode portion and a second electrode portion electrically connected to the first electrode structure and the second electrode structure, and a bonding wire connecting at least one of the first electrode structure and the second electrode structure to the semiconductor light emitting device.
Abstract:
A light emitting device package may include: a package board; a semiconductor light emitting device disposed on the package board; and a color characteristics converting unit having a resin including a wavelength conversion material converting light emitted from the semiconductor light emitting device into light of a different wavelength and glass powder having a glass composition with a rare earth element added thereto and filtering light within a particular wavelength band, and disposed on a path on which light emitted from the semiconductor light emitting device travels.