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公开(公告)号:US20190164922A1
公开(公告)日:2019-05-30
申请号:US16244661
申请日:2019-01-10
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ae-nee JANG , KyungSeon HWANG , SunWon KANG
Abstract: A semiconductor package includes a substrate, through-electrodes penetrating the substrate, first bumps spaced apart from each other in a first direction parallel to a top surface of the substrate and electrically connected to the through-electrodes, respectively, and at least one second bump disposed between the first bumps and electrically insulated from the through-electrodes. The first bumps and the at least one second bump constitute one row in the first direction. A level of a bottom surface of the at least one second bump from the top surface of the substrate is a substantially same as levels of bottom surfaces of the first bumps from the top surface of the substrate.
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公开(公告)号:US20170179062A1
公开(公告)日:2017-06-22
申请号:US15375196
申请日:2016-12-12
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ae-nee JANG , KyungSeon HWANG , SunWon KANG
CPC classification number: H01L24/14 , H01L21/563 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/10 , H01L24/11 , H01L24/12 , H01L24/13 , H01L24/73 , H01L2224/0345 , H01L2224/03912 , H01L2224/0401 , H01L2224/05022 , H01L2224/05025 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/0557 , H01L2224/05572 , H01L2224/05582 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/0603 , H01L2224/06102 , H01L2224/10125 , H01L2224/11462 , H01L2224/1147 , H01L2224/11849 , H01L2224/12105 , H01L2224/13025 , H01L2224/13082 , H01L2224/131 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13564 , H01L2224/13582 , H01L2224/14104 , H01L2224/14515 , H01L2224/14517 , H01L2224/26145 , H01L2224/73104 , H01L2224/81191 , H01L2224/81203 , H01L2224/81815 , H01L2924/00014 , H01L2924/01074 , H01L2924/01047 , H01L2924/014
Abstract: A semiconductor package includes a substrate, through-electrodes penetrating the substrate, first bumps spaced apart from each other in a first direction parallel to a top surface of the substrate and electrically connected to the through-electrodes, respectively, and at least one second bump disposed between the first bumps and electrically insulated from the through-electrodes. The first bumps and the at least one second bump constitute one row in the first direction. A level of a bottom surface of the at least one second bump from the top surface of the substrate is a substantially same as levels of bottom surfaces of the first bumps from the top surface of the substrate.
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公开(公告)号:US20180358328A1
公开(公告)日:2018-12-13
申请号:US15855205
申请日:2017-12-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: SunWon KANG , Won-young KIM
IPC: H01L25/065 , H01L23/00 , H01L23/498 , H01L23/522 , H01L23/31 , H01L25/00 , H01L21/56
CPC classification number: H01L25/0657 , H01L21/568 , H01L23/3128 , H01L23/49822 , H01L23/5226 , H01L24/05 , H01L25/50 , H01L2225/06541 , H01L2225/06572
Abstract: A semiconductor package includes a first interconnect substrate on a first redistribution substrate and having a first opening penetrating the first interconnect substrate. A first semiconductor chip is on the first redistribution substrate and the first opening of the first interconnect substrate. A second redistribution substrate is on the first interconnect substrate and the first semiconductor chip. A second interconnect substrate is on the second redistribution substrate and has a second opening penetrating the second interconnect substrate. A second semiconductor chip is on the second redistribution substrate and in the second opening of the second interconnect substrate.
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公开(公告)号:US20170069582A1
公开(公告)日:2017-03-09
申请号:US15172917
申请日:2016-06-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Il-Joon KIM , SunWon KANG
IPC: H01L23/64 , H01L27/108 , H01L23/00 , H01L25/065 , H01L23/522 , H01L23/498
CPC classification number: H01L23/642 , H01L23/49811 , H01L23/5222 , H01L23/5223 , H01L23/5226 , H01L24/02 , H01L24/05 , H01L24/48 , H01L24/49 , H01L25/0657 , H01L25/18 , H01L2224/02375 , H01L2224/02379 , H01L2224/04042 , H01L2224/05568 , H01L2224/05569 , H01L2224/32145 , H01L2224/48091 , H01L2224/48105 , H01L2224/48227 , H01L2224/48228 , H01L2224/49113 , H01L2224/73215 , H01L2224/73265 , H01L2225/0651 , H01L2225/06527 , H01L2225/06562 , H01L2924/00014 , H01L2924/1431 , H01L2924/1434 , H01L2924/1436 , H01L2924/00 , H01L2224/45099
Abstract: A semiconductor device includes a first set of pads disposed at a first vertical level on a substrate, a first interconnection layer formed at a second vertical level higher than the first vertical level on the substrate, a second interconnection layer formed at a third vertical level higher than the second vertical level on the substrate, capacitive elements included in either the first or the second interconnection layer, and a second set of pads disposed at a fourth vertical level higher than the third vertical level on the substrate. A first capacitive element of the capacitive elements is connected between a first portion and a second portion of the first interconnection layer or a first capacitive element of the capacitive elements is connected between a third portion and a fourth portion of the second interconnection layer.
Abstract translation: 一种半导体器件包括:设置在衬底上的第一垂直电平的第一组焊盘;在第二垂直电平上形成的第一互连层,该第二垂直电平高于衬底上的第一垂直电平;第二互连层, 包括在第一或第二互连层中的电容元件,以及设置在高于衬底上的第三垂直电平的第四垂直电平的第二组焊盘。 电容元件的第一电容元件连接在第一互连层的第一部分和第二部分之间,或者电容元件的第一电容元件连接在第二互连层的第三部分和第四部分之间。
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公开(公告)号:US20180366456A1
公开(公告)日:2018-12-20
申请号:US15867686
申请日:2018-01-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sangnam JEONG , IlJoon Kim , SunWon KANG
IPC: H01L25/16 , H01L23/00 , H01L23/522 , H01L23/48
Abstract: Disclosed is a semiconductor package including a semiconductor chip, a first outer capacitor on the semiconductor chip including a first electrode and a second electrode, a second outer capacitor on the semiconductor chip including a first electrode pattern and a second electrode pattern, and a conductive pattern on the semiconductor chip and electrically connected to the first electrode of the first outer capacitor and the first electrode pattern of the second outer capacitor. The second electrode of the first outer capacitor is insulated from the second electrode pattern of the second outer capacitor.
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公开(公告)号:US20210183801A1
公开(公告)日:2021-06-17
申请号:US17189405
申请日:2021-03-02
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Ae-nee JANG , KyungSeon HWANG , SunWon KANG
Abstract: A semiconductor package includes a substrate, through-electrodes penetrating the substrate, first bumps spaced apart from each other in a first direction parallel to a top surface of the substrate and electrically connected to the through-electrodes, respectively, and at least one second bump disposed between the first bumps and electrically insulated from the through-electrodes. The first bumps and the at least one second bump constitute one row in the first direction. A level of a bottom surface of the at least one second bump from the top surface of the substrate is a substantially same as levels of bottom surfaces of the first bumps from the top surface of the substrate.
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公开(公告)号:US20200083195A1
公开(公告)日:2020-03-12
申请号:US16684569
申请日:2019-11-14
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyoungsoo KIM , SunWon KANG
IPC: H01L25/065 , H01L25/10 , H01L23/50 , H01L23/498
Abstract: A semiconductor module, comprising: a module substrate with an electric connection element; at least one semiconductor package provided on the module substrate, the at least one semiconductor package including a plurality of semiconductor chips; and a connection region electrically connecting the semiconductor package to the module substrate, wherein the connection region comprises: a first region electrically connected between data signal terminals of a first chip of the semiconductor chips of the semiconductor package and the module substrate; a second region electrically connected between data signal terminals of a second chip of the semiconductor chips of the semiconductor package and the module substrate; and a third region electrically connected between command/address signal terminals of both the first and second chips of the semiconductor package and the module substrate, wherein the first region is closer to the electric connection element of the module substrate, compared with the third region.
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公开(公告)号:US20190295999A1
公开(公告)日:2019-09-26
申请号:US16438430
申请日:2019-06-11
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sangnam JEONG , IlJoon KIM , SunWon KANG
IPC: H01L25/16 , H01L23/538 , H01L23/48 , H01L23/00 , H01L23/522
Abstract: Disclosed is a semiconductor package including a semiconductor chip, a first outer capacitor on the semiconductor chip including a first electrode and a second electrode, a second outer capacitor on the semiconductor chip including a first electrode pattern and a second electrode pattern, and a conductive pattern on the semiconductor chip and electrically connected to the first electrode of the first outer capacitor and the first electrode pattern of the second outer capacitor. The second electrode of the first outer capacitor is insulated from the second electrode pattern of the second outer capacitor.
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