公开(公告)号：US06175150B1

公开(公告)日：2001-01-16

申请号：US09061904

申请日：1998-04-17

申请人： Seiji Ichikawa ,  Takeshi Umemoto ,  Toshiaki Nishibe ,  Kazunari Sato ,  Kunihiko Tubota ,  Masato Suga ,  Yoshikazu Nishimura ,  Keita Okahira ,  Tatsuya Miya ,  Tooru Kitakoga ,  Kazuhiro Tahara

发明人： Seiji Ichikawa ,  Takeshi Umemoto ,  Toshiaki Nishibe ,  Kazunari Sato ,  Kunihiko Tubota ,  Masato Suga ,  Yoshikazu Nishimura ,  Keita Okahira ,  Tatsuya Miya ,  Tooru Kitakoga ,  Kazuhiro Tahara

IPC分类号： H01L23495

CPC分类号： H01L23/3107 ,  H01L21/565 ,  H01L23/49568 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01078 ,  H01L2924/10161 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A plastic-encapsulated semiconductor device is provided, which is capable of efficient heat dissipation without upsizing while preventing the moisture from reaching an IC chip. This device is comprised of an electrically-conductive island having a chip-mounting area, an IC chip fixed on the chip-mounting area of the island, leads electrically connected to bonding pads of the chip through bonding wires, a plastic package for encapsulating the island, the chip, the bonding wires, and inner parts of the leads. The package has an approximately flat bottom face. Outer parts of the leads are protruded from the package and are located in approximately a same plane as the bottom face of the package. The island has an exposition part exposed from the package at a location excluding the chip-mounting area. A lower face of the exposition part of the island is located in approximately a same plane as the bottom face of the package. The chip and the chip-mounting area of the island are entirely buried in the package. Apart of the island excluding the chip-mounting area is bent toward the bottom face of the package to be exposed therefrom.

摘要翻译： 提供了一种塑料封装的半导体器件，其能够在不加大尺寸的同时有效地散热，同时防止水分到达IC芯片。 该器件由具有芯片安装区域的导电岛，固定在岛的芯片安装区域上的IC芯片通过接合线电连接到芯片的焊盘，塑料封装件用于封装 岛，芯片，接合线和引线的内部部分。 该包装具有大致平坦的底面。 引线的外部部分从封装突出并且位于与封装的底面大致相同的平面中。 该岛具有在除了芯片安装区域之外的位置处从封装暴露的外露部分。 岛的展示部分的下表面位于与包装的底面大致相同的平面中。 岛的芯片和芯片安装区域完全埋在封装中。 除芯片安装区域之外的岛除了朝向包装的底面弯曲以暴露于其外。

公开(公告)号：US6165818A

公开(公告)日：2000-12-26

申请号：US74120

申请日：1998-05-07

申请人： Seiji Ichikawa ,  Takeshi Umemoto ,  Toshiaki Nishibe ,  Kazunari Sato ,  Kunihiko Tsubota ,  Masato Suga ,  Yoshikazu Nishimura ,  Keita Okahira ,  Tatsuya Miya ,  Toru Kitakoga ,  Kazuhiro Tahara

发明人： Seiji Ichikawa ,  Takeshi Umemoto ,  Toshiaki Nishibe ,  Kazunari Sato ,  Kunihiko Tsubota ,  Masato Suga ,  Yoshikazu Nishimura ,  Keita Okahira ,  Tatsuya Miya ,  Toru Kitakoga ,  Kazuhiro Tahara

IPC分类号： H01L23/50 ,  H01L23/495 ,  H01L21/44 ,  H01L21/495

CPC分类号： H01L23/49568 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is disclosed wherein a pair of radiating terminals and a plurality of lead terminals are formed from a single lead frame. A hole or holes in each radiating terminal are formed with an equal width and in an equal pitch to those of gaps between the lead terminals, and the opposite sides of each hole of the radiating terminal are connected to each other by a support element. The support elements of the radiating terminals and support elements which interconnect the lead terminals are formed with an equal length and in an equal pitch to allow the support elements to be cut away by a plurality of punches which are arranged in an equal pitch and have an equal width.

摘要翻译： 公开了一种半导体器件，其中一对辐射端子和多个引线端子由单个引线框形成。 每个辐射端子中的孔或孔以与引线端子之间的间隙相等的间距形成，并且辐射端子的每个孔的相对侧通过支撑元件彼此连接。 互连引线端子的辐射端子和支撑元件的支撑元件形成为具有相同的长度和相等的间距，以允许支撑元件被以相等间距排列的多个冲头切除，并具有 宽度相等

公开(公告)号：US06242797B1

公开(公告)日：2001-06-05

申请号：US09059324

申请日：1998-04-13

申请人： Seiji Ichikawa ,  Takeshi Umemoto ,  Toshiaki Nishibe ,  Kazunari Sato ,  Kunihiko Tsubota ,  Masato Suga ,  Yoshikazu Nishimura ,  Keita Okahira ,  Tatsuya Miya ,  Toru Kitakoga ,  Kazuhiro Tahara

发明人： Seiji Ichikawa ,  Takeshi Umemoto ,  Toshiaki Nishibe ,  Kazunari Sato ,  Kunihiko Tsubota ,  Masato Suga ,  Yoshikazu Nishimura ,  Keita Okahira ,  Tatsuya Miya ,  Toru Kitakoga ,  Kazuhiro Tahara

IPC分类号： H01L2348

CPC分类号： H01L23/49568 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/13055 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A semiconductor device having a pellet mounted on a radiating plate thereof is disclosed. The radiating plate is formed in such a shape that a central portion thereof is positioned higher than both end portions thereof. A pellet is mounted on a lower face of the central portion of the radiating plate, and an upper face of the central portion of the radiating plate is exposed to the top of a resin member. Since the upper face of the central portion of the radiating plate which has the pellet mounted on the lower face thereof is exposed from the resin member, heat generated by the pellet can be radiated efficiently.

摘要翻译： 公开了一种具有安装在其散热板上的颗粒的半导体器件。 散热板形成为使其中央部位高于其两端部的形状。 在散热板的中央部的下表面安装有颗粒，并且散热板的中央部的上表面暴露于树脂部件的顶部。 由于具有安装在其下表面的颗粒的散热板的中心部分的上表面从树脂构件露出，所以可以有效地辐射由颗粒产生的热量。

公开(公告)号：US06104086A

公开(公告)日：2000-08-15

申请号：US59316

申请日：1998-04-13

申请人： Seiji Ichikawa ,  Takeshi Umemoto ,  Toshiaki Nishibe ,  Kazunari Sato ,  Kunihiko Tsubota ,  Masato Suga ,  Yoshikazu Nishimura ,  Keita Okahira ,  Tatsuya Miya ,  Toru Kitakoga ,  Kazuhiro Tahara

发明人： Seiji Ichikawa ,  Takeshi Umemoto ,  Toshiaki Nishibe ,  Kazunari Sato ,  Kunihiko Tsubota ,  Masato Suga ,  Yoshikazu Nishimura ,  Keita Okahira ,  Tatsuya Miya ,  Toru Kitakoga ,  Kazuhiro Tahara

IPC分类号： H01L21/56 ,  H01L21/48 ,  H01L23/31 ,  H01L23/433 ,  H01L23/50 ,  H01L23/48

CPC分类号： H01L21/4842 ,  H01L23/3107 ,  H01L23/4334 ,  H01L2224/48247 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/181

摘要： A semiconductor device having lead terminals bent in a J-shape is disclosed. A radiating plate having a recess formed on an outer peripheral portion thereof is exposed to a lower face of a resin member and free ends of outer portions of the lead terminals are positioned in the recess of the radiating plate. The free ends of the outer portions of the lead terminals and the recess of the radiating plate are isolated from each other by projections of the resin member. Since the radiating plate is exposed to the lower face of the resin member, the heat radiating property is high whereas the radiating plate and the lead terminals are not short-circuited to each other at all.

摘要翻译： 公开了一种具有弯曲成J形的引线端子的半导体器件。 具有形成在其外周部上的凹部的散热板暴露于树脂构件的下表面，引线端子的外部的自由端位于散热板的凹部中。 引线端子的外部部分和辐射板的凹部的自由端通过树脂部件的突起彼此隔离。 由于辐射板暴露于树脂构件的下表面，所以散热性高，而辐射板和引线端子根本不相互短路。

公开(公告)号：US06319753B1

公开(公告)日：2001-11-20

申请号：US09417745

申请日：1999-10-14

申请人： Seiji Ichikawa ,  Takeshi Umemoto ,  Toshiaki Nishibe ,  Kazunari Sato ,  Kunihiko Tsubota ,  Masato Suga ,  Yoshikazu Nishimura ,  Keita Okahira ,  Tatsuya Miya ,  Toru Kitakoga ,  Kazuhiro Tahara

发明人： Seiji Ichikawa ,  Takeshi Umemoto ,  Toshiaki Nishibe ,  Kazunari Sato ,  Kunihiko Tsubota ,  Masato Suga ,  Yoshikazu Nishimura ,  Keita Okahira ,  Tatsuya Miya ,  Toru Kitakoga ,  Kazuhiro Tahara

IPC分类号： H01L2144

CPC分类号： H01L21/4842 ,  H01L23/3107 ,  H01L23/4334 ,  H01L24/48 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/85399

摘要： A semiconductor device having lead terminals bent in a J-shape is disclosed. A radiating plate having a recess formed on an outer peripheral portion thereof is exposed to a lower face of a resin member and free ends of outer portions of the lead terminals are positioned in the recess of the radiating plate. The free ends of the outer portions of the lead terminals and the recess of the radiating plate are isolated from each other by projections of the resin member. Since the radiating plate is exposed to the lower face of the resin member, the heat radiating property is high whereas the radiating plate and the lead terminals are not short-circuited to each other at all.

摘要翻译： 公开了一种具有弯曲成J形的引线端子的半导体器件。 具有形成在其外周部上的凹部的散热板暴露于树脂构件的下表面，引线端子的外部的自由端位于散热板的凹部中。 引线端子的外部部分和辐射板的凹部的自由端通过树脂部件的突起彼此隔离。 由于辐射板暴露于树脂构件的下表面，所以散热性高，而辐射板和引线端子根本不相互短路。

公开(公告)号：US06177720B1

公开(公告)日：2001-01-23

申请号：US09439810

申请日：1999-11-12

申请人： Seiji Ichikawa ,  Takeshi Umemoto ,  Toshiaki Nishibe ,  Kazunari Sato ,  Kunihiko Tsubota ,  Masato Suga ,  Yoshikazu Nishimura ,  Keita Okahira ,  Tatsuya Miya ,  Toru Kitakoga ,  Kazuhiro Tahara

发明人： Seiji Ichikawa ,  Takeshi Umemoto ,  Toshiaki Nishibe ,  Kazunari Sato ,  Kunihiko Tsubota ,  Masato Suga ,  Yoshikazu Nishimura ,  Keita Okahira ,  Tatsuya Miya ,  Toru Kitakoga ,  Kazuhiro Tahara

IPC分类号： H01L23495

CPC分类号： H01L23/49568 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is disclosed wherein a pair of radiating terminals and a plurality of lead terminals are formed from a single lead frame. A hole or holes in each radiating terminal are formed with an equal width and in an equal pitch to those of gaps between the lead terminals, and the opposite sides of each hole of the radiating terminal are connected to each other by a support element. The support elements of the radiating terminals and support elements which interconnect the lead terminals are formed with an equal length and in an equal pitch to allow the support elements to be cut away by a plurality of punches which are arranged in an equal pitch and have an equal width.

摘要翻译： 公开了一种半导体器件，其中一对辐射端子和多个引线端子由单个引线框形成。 每个辐射端子中的孔或孔以与引线端子之间的间隙相等的间距形成，并且辐射端子的每个孔的相对侧通过支撑元件彼此连接。 互连引线端子的辐射端子和支撑元件的支撑元件形成为具有相同的长度和相等的间距，以允许支撑元件被以相等间距排列的多个冲头切除，并具有 宽度相等

公开(公告)号：US6150715A

公开(公告)日：2000-11-21

申请号：US123448

申请日：1998-07-28

申请人： Seiji Ichikawa ,  Takeshi Umemoto ,  Kazunari Sato ,  Kunihiko Tsubota ,  Yoshikazu Nishimura ,  Toshiaki Nishibe ,  Kazuhiro Tahara ,  Masato Suga ,  Toru Kitakoga ,  Tatsuya Miya ,  Keita Okahira

发明人： Seiji Ichikawa ,  Takeshi Umemoto ,  Kazunari Sato ,  Kunihiko Tsubota ,  Yoshikazu Nishimura ,  Toshiaki Nishibe ,  Kazuhiro Tahara ,  Masato Suga ,  Toru Kitakoga ,  Tatsuya Miya ,  Keita Okahira

IPC分类号： H01L23/29 ,  H01L23/495 ,  H01L23/50 ,  H01L23/28 ,  H01L23/48

CPC分类号： H01L23/49568 ,  H01L23/49503 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49171 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/1532 ,  H01L2924/181

摘要： A semiconductor device of the present invention comprises a semiconductor pellet, a radiation plate mounted with the semiconductor pellet, a plurality of lead terminals electrically connected with the semiconductor pellet, and a resin member for encapsulating the above items. The resin member has a first surface and a second surface, and the radiation plate has a first portion exposed to the outside from the first surface of the resin member and a second portion exposed to the outside from the second surface of the resin member.

摘要翻译： 本发明的半导体器件包括半导体芯片，安装有半导体芯片的辐射板，与半导体芯片电连接的多个引线端子和用于封装上述物品的树脂部件。 树脂构件具有第一表面和第二表面，并且辐射板具有从树脂构件的第一表面暴露于外部的第一部分和从树脂构件的第二表面暴露于外部的第二部分。

公开(公告)号：US5883541A

公开(公告)日：1999-03-16

申请号：US811931

申请日：1997-03-05

申请人： Kazuhiro Tahara ,  Tatsuya Miya

发明人： Kazuhiro Tahara ,  Tatsuya Miya

IPC分类号： H03K17/693 ,  H03K17/687

CPC分类号： H03K17/693

摘要： A high frequency switching circuitry comprising the following elements. At least one input signal terminal is provided into which an input signal is inputted. An output signal terminal is also provided, from which an output signal is outputted. A first resistive switching circuit is connected between the input signal terminal and a first node. The first resistive switching circuit has first and second signal transmission channels having first and second resistances. The second resistance of the second channel is much higher than the first resistance of the first channel. The first resistive switching circuit switches the first and second signal transmission channels. A first switching element is connected between the first node and the output terminal. A second switching element is connected in series between the first node and a ground line. It is important that the second resistance of the second signal transmission channel of the first resistive switching circuit is almost equal to a difference of an ON-resistance of the second switching element from an impedance of a signal source of the high frequency switching circuitry.

摘要翻译： 一种高频开关电路，包括以下元件。 提供输入信号至少一个输入信号端子。 还提供输出信号端子，从该输出信号端子输出输出信号。 第一电阻开关电路连接在输入信号端和第一节点之间。 第一电阻开关电路具有第一和第二信号传输通道，其具有第一和第二电阻。 第二通道的第二阻力远高于第一通道的第一阻力。 第一电阻式开关电路切换第一和第二信号传输通道。 第一开关元件连接在第一节点和输出端子之间。 第二开关元件串联连接在第一节点和地线之间。 重要的是，第一电阻式开关电路的第二信号传输通道的第二电阻几乎等于第二开关元件的导通电阻与高频开关电路的信号源的阻抗的差。

公开(公告)号：US06391147B2

公开(公告)日：2002-05-21

申请号：US09738302

申请日：2000-12-15

申请人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose

发明人： Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose

IPC分类号： H05H100

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244

摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

摘要翻译： 一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于 固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活 物种影响晶圆。

公开(公告)号：US06264788B1

公开(公告)日：2001-07-24

申请号：US09556133

申请日：2000-04-21

申请人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

发明人： Masayuki Tomoyasu ,  Akira Koshiishi ,  Kosuke Imafuku ,  Shosuke Endo ,  Kazuhiro Tahara ,  Yukio Naito ,  Kazuya Nagaseki ,  Keizo Hirose ,  Mitsuaki Komino ,  Hiroto Takenaka ,  Hiroshi Nishikawa ,  Yoshio Sakamoto

IPC分类号： H05H100

CPC分类号： C23C16/45565 ,  C23C16/4405 ,  C23C16/4407 ,  C23C16/4483 ,  C23C16/4485 ,  C23C16/4557 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32935 ,  H01J37/32963 ,  Y10S156/916

摘要： A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the water.

摘要翻译： 一种等离子体处理方法，包括：排出处理室以对处理室进行减压，将晶片安装在可变装置上，通过淋浴电极向晶片供应处理气体，施加高频功率，该频率的第一频率f1低于 固有的较低离子转移频率的工艺气体，以及施加高频功率，其具有高于处理气体的固有上部离子转移频率的第二频率f2，由此在处理室中产生等离子体并被激活 物种影响水。