摘要:
A semiconductor package includes a main substrate, a semiconductor chip having a first side and a second side, the first side of the semiconductor chip disposed on the main substrate and electrically connected to the main substrate, and a conductive network formed on the second side of the semiconductor chip.
摘要:
A semiconductor package includes a main substrate, a semiconductor chip having a first side and a second side, the first side of the semiconductor chip disposed on the main substrate and electrically connected to the main substrate, and a conductive network formed on the second side of the semiconductor chip.
摘要:
Example embodiments relate to a semiconductor device. The semiconductor device may include a first semiconductor chip including a semiconductor substrate, a first through via that penetrates the semiconductor substrate, a second semiconductor chip stacked on one plane of the first semiconductor chip, and a shielding layer covering at least one portion of the first and/or second semiconductor chip and electrically connected to the first through via.
摘要:
A semiconductor package includes a substrate in which a plurality of wires are formed; at least one semiconductor chip electrically connected to portions of the plurality of wires; and a shielding can mounted on the substrate, surrounding the at least one semiconductor chip, electrically connected to at least one wire of the plurality of wires and including a soft magnetic material. The semiconductor package can prevent or substantially reduce electromagnetic interference (EMI).
摘要:
A semiconductor package includes a substrate in which a plurality of wires are formed; at least one semiconductor chip electrically connected to portions of the plurality of wires; and a shielding can mounted on the substrate, surrounding the at least one semiconductor chip, electrically connected to at least one wire of the plurality of wires and including a soft magnetic material. The semiconductor package can prevent or substantially reduce electromagnetic interference (EMI).
摘要:
An optical system and an SSD module that maintain optimal SI, PI and EMI characteristics without a shield based on a ground voltage and an impedance match. The optical system includes a solid state drive (SSD) module and an input/output (I/O) interface. The SSD module includes a plurality of solid state memory units. The input/output (I/O) interface receives data to be written to at least one of the solid state memory units from a main memory unit, the input/output (I/O) interface transmits data written in at least one of the solid state memory units to the main memory unit. The SSD module and the I/O interface transmit and receive data using an optical medium.
摘要:
A semiconductor chip including a substrate, a first data pad arranged on the substrate, and a first control/address pad arranged on the substrate, wherein the first data pad is arranged in an edge region of the substrate, and the first control/address pad is arranged in a center region of the substrate.
摘要:
An embedded chip-on-chip package includes a printed circuit board having a recessed semiconductor chip mounting unit constituted by a recess in the printed circuit board and a circuit pattern at the bottom of the recess, a first semiconductor chip embedded in the recessed semiconductor chip mounting unit and electrically connected to the circuit pattern at the bottom of the recess, and a second semiconductor chip mounted to the recessed semiconductor chip mounting unit and electrically connected to the first semiconductor chip and the printed circuit board independently of each other.
摘要:
A method of fabricating a phase shift mask is provided in which light shield film patterns for setting a phase shift region and a phase non-shift region are simultaneously formed on a substrate. A groove is formed in the substrate set as the phase shift region. The light shield film pattern, which contacts the groove and is formed on a region of the substrate set as the phase non-shift region, is removed. A phase shift layer can be formed between the substrate and the light shield film pattern. In this case, regions set by the light shield film pattern become opposite to when the phase shift layer is not formed. That is, a phase shift region is changed into a phase non-shift region, and the phase non-shift region is changed into the phase shift region. As described above, the phase shift region and the phase non-shift region are simultaneously set when the light shield film pattern is formed, thus preventing the position of the phase shift or non-shift region from being shifted due to sequential formation of the phase shift and non-shift regions.
摘要:
A photo mask of a semiconductor device includes a transmission preventing layer formed of a molybdenum alloy, which is a solid solution of a metal atom such as chrome in molybdenum, on a light transmitting substrate. Also, the molybdenum alloy may be a molybdenum vanadium alloy, a molybdenum niobium alloy, a molybdenum tantalum alloy, or a molybdenum tungsten alloy, which is a solid solution of vanadium, niobium, tantalum, or tungsten in molybdenum, respectively. The photo mask provides high resolution during a photolithography process by obtaining a thinner transmission preventing layer.