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    Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth
    2.
    发明授权
    Fabrication of optical-quality facets vertical to a (001) orientation substrate by selective epitaxial growth 有权
    通过选择性外延生长制造垂直于（001）取向衬底的光学质量面

    公开(公告)号：US08841756B2

    公开(公告)日：2014-09-23

    申请号：US12200139

    申请日：2008-08-28

    申请人： Seung-Chang Lee ,  Steven R. J. Brueck

    发明人： Seung-Chang Lee ,  Steven R. J. Brueck

    IPC分类号： H01L29/04 ,  H01L21/02 ,  H01L33/00 ,  H01S5/02

    CPC分类号： H01L21/02642 ,  H01L21/02373 ,  H01L21/02387 ,  H01L21/02433 ,  H01L21/02609 ,  H01L33/007 ,  H01S5/0205

    摘要： Methods for forming {110} type facets on a (001) oriented substrate of Group III-V compounds and Group IV semiconductors using selective epitaxial growth is provided. The methods include forming a dielectric film on a (100) substrate. The dielectric film can then be patterned to expose a portion of the substrate and to form a substrate-dielectric film boundary substantially parallel to a direction. A {110} type sidewall facet can then be formed by epitaxially growing a semiconductor layer on the exposed portion of the substrate and the dielectric film.

    摘要翻译： 提供了使用选择性外延生长在III-V族化合物和IV族半导体的（001）取向衬底上形成{110}型面的方法。 所述方法包括在（100）衬底上形成电介质膜。 然后可以对电介质膜进行构图以暴露衬底的一部分并且形成基本上平行于<110>方向的衬底 - 电介质膜边界。 然后可以通过在衬底和电介质膜的暴露部分上外延生长半导体层来形成{110}型侧壁面。

    FABRICATION OF OPTICAL-QUALITY FACETS VERTICAL TO A (001) ORIENTATION SUBSTRATE BY SELECTIVE EPITAXIAL GROWTH
    3.
    发明申请
    FABRICATION OF OPTICAL-QUALITY FACETS VERTICAL TO A (001) ORIENTATION SUBSTRATE BY SELECTIVE EPITAXIAL GROWTH 有权
    通过选择性外延生长垂直于A（001）方位基板的光学质量面的制造

    公开(公告)号：US20080315370A1

    公开(公告)日：2008-12-25

    申请号：US12200139

    申请日：2008-08-28

    申请人： Seung-Chang Lee ,  Steven R. J. Brueck

    发明人： Seung-Chang Lee ,  Steven R. J. Brueck

    IPC分类号： H01L29/04

    CPC分类号： H01L21/02642 ,  H01L21/02373 ,  H01L21/02387 ,  H01L21/02433 ,  H01L21/02609 ,  H01L33/007 ,  H01S5/0205

    摘要： Methods for forming {110} type facets on a (001) oriented substrate of Group III-V compounds and Group IV semiconductors using selective epitaxial growth is provided. The methods include forming a dielectric film on a (100) substrate. The dielectric film can then be patterned to expose a portion of the substrate and to form a substrate-dielectric film boundary substantially parallel to a direction. A {110} type sidewall facet can then be formed by epitaxially growing a semiconductor layer on the exposed portion of the substrate and the dielectric film.

    摘要翻译： 提供了使用选择性外延生长在III-V族化合物和IV族半导体的（001）取向衬底上形成{110}型面的方法。 所述方法包括在（100）衬底上形成电介质膜。 然后可以对电介质膜进行构图以暴露衬底的一部分并且形成基本上平行于<110>方向的衬底 - 电介质膜边界。 然后可以通过在衬底和电介质膜的暴露部分上外延生长半导体层来形成{110}型侧壁面。

    Cubic phase, nitrogen-based compound semiconductor films epitaxially grown on a grooved Si <001> substrate
    5.
    发明授权
    Cubic phase, nitrogen-based compound semiconductor films epitaxially grown on a grooved Si <001> substrate 有权
    在带槽的Si <001>衬底上外延生长的立方相，氮基化合物半导体膜

    公开(公告)号：US08313967B1

    公开(公告)日：2012-11-20

    申请号：US12691463

    申请日：2010-01-21

    申请人： Seung-Chang Lee ,  Steven R. J. Brueck

    发明人： Seung-Chang Lee ,  Steven R. J. Brueck

    IPC分类号： H01L21/20

    CPC分类号： C30B25/04 ,  C30B25/18 ,  C30B25/186 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02647 ,  H01L27/1222 ,  H01L29/045 ,  H01L29/06 ,  H01L29/0657 ,  H01L29/16 ,  H01L29/2003

    摘要： A method of epitaxial growth of cubic phase, nitrogen-based compound semiconductor thin films on a semiconductor substrate, for example a substrate, which is periodically patterned with grooves oriented parallel to the crystal direction and terminated in sidewalls, for example sidewalls. The method can provide an epitaxial growth which is able to supply high-quality, cubic phase epitaxial films on a silicon substrate. Controlling nucleation on sidewall facets, for example , fabricated in every groove and blocking the growth of the initial hexagonal phase at the outer region of an epitaxial silicon layer with barrier materials prepared at both sides of each groove allows growth of cubic-phase thin film in each groove and either be extended to macro-scale islands or coalesced with films grown from adjacent grooves to form a continuous film. This can result in a wide-area, cubic phase nitrogen-based compound semiconductor film on a substrate.

    摘要翻译： 在半导体衬底（例如<001>衬底）上外延生长立方相氮基化合物半导体薄膜的方法，该衬底周期性地图案化具有平行于晶体方向并终止于侧壁的沟槽的沟槽，用于 例如<111>侧壁。 该方法可以提供能够在<001>硅衬底上提供高质量立方相外延膜的外延生长。 控制在每个凹槽上制造的侧壁面上的成核，例如<111>，并且阻挡在外延硅层的外部区域处的初始六边形相的生长，其中在每个凹槽的两侧制备的阻挡材料允许生长立方相 每个凹槽中的薄膜，并且被延伸到大尺度岛或与从相邻凹槽生长的薄膜聚结以形成连续薄膜。 这可以导致在<001>衬底上的广泛的立方相的氮基化合物半导体膜。

    Surface plasma wave coupled detectors
    6.
    发明授权
    Surface plasma wave coupled detectors 有权
    表面等离子体波耦合检测器

    公开(公告)号：US09466739B1

    公开(公告)日：2016-10-11

    申请号：US14213691

    申请日：2014-03-14

    申请人： Steven R. J. Brueck ,  Sanjay Krishna ,  Seung-Chang Lee

    发明人： Steven R. J. Brueck ,  Sanjay Krishna ,  Seung-Chang Lee

    IPC分类号： H01L31/0232 ,  H01L31/18 ,  H01L31/0352

    CPC分类号： H01L31/02327 ,  H01L31/035236 ,  H01L31/09

    摘要： The present disclosure relates to an electromagnetic energy detector. The detector can include a substrate having a first refractive index; a metal layer; an absorber layer having a second refractive index and disposed between the substrate and the metal layer; a coupling structure to convert incident radiation to a surface plasma wave; additional conducting layers to provide for electrical contact to the electromagnetic energy detector, each conducting layer characterized by a conductivity and a refractive index; and a surface plasma wave (“SPW”) mode-confining layer having a third refractive index that is higher than the second refractive index disposed between the substrate and the metal layer.

    摘要翻译： 本公开涉及电磁能量检测器。 检测器可以包括具有第一折射率的基板; 金属层; 具有第二折射率并设置在所述基板和所述金属层之间的吸收体层; 将入射辐射转换成表面等离子体波的耦合结构; 附加导电层以提供与电磁能量检测器的电接触，每个导电层的特征在于导电性和折射率; 以及具有比设置在基板和金属层之间的第二折射率高的第三折射率的表面等离子体波（“SPW”）模式限制层。

    Epitaxial growth of in-plane nanowires and nanowire devices
    8.
    发明授权
    Epitaxial growth of in-plane nanowires and nanowire devices 有权
    平面内纳米线和纳米线器件的外延生长

    公开(公告)号：US08030108B1

    公开(公告)日：2011-10-04

    申请号：US12492265

    申请日：2009-06-26

    申请人： Seung Chang Lee ,  Steven R. J. Brueck

    发明人： Seung Chang Lee ,  Steven R. J. Brueck

    IPC分类号： H01L21/00

    CPC分类号： H01L21/02603 ,  B82Y10/00 ,  B82Y40/00 ,  B82Y99/00 ,  H01L21/0237 ,  H01L21/02439 ,  H01L21/02507 ,  H01L21/02521 ,  H01L21/02639 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/127 ,  H01L29/158 ,  H01L29/7783 ,  H01L29/7853 ,  H01L33/06 ,  H01L33/18 ,  H01S5/32 ,  Y10S977/951 ,  Y10S977/962

    摘要： Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance.

    摘要翻译： 示例性实施例提供用于其形成的半导体纳米线和纳米线器件/应用和方法。 在实施例中，平面内纳米线可以在图案化衬底上外延生长，其比用于器件处理和三维（3D）集成电路的垂直纳米线更有利。 在实施方案中，可以通过使用最初在一维（1D）纳米尺度开口中生长的外延层的横向过生长和刻面的选择性外延来形成平面内纳米线。 在实施例中，可以在纳米线，衬底和附加电气或光学部件之间建立和控制光学，电气和热连接，以获得更好的器件和系统性能。