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56 条记录 (耗时 0.072 秒)

    Electroactive polymer actuator and method of manufacturing the same
    1.
    发明授权
    Electroactive polymer actuator and method of manufacturing the same 有权
    电动聚合物致动器及其制造方法

    公开(公告)号：US08564181B2

    公开(公告)日：2013-10-22

    申请号：US13227693

    申请日：2011-09-08

    申请人： Seung-Tae Choi ,  Jong-Oh Kwon ,  Youn-Jung Park ,  Cheol-Min Park ,  Yeon-Sik Choi

    发明人： Seung-Tae Choi ,  Jong-Oh Kwon ,  Youn-Jung Park ,  Cheol-Min Park ,  Yeon-Sik Choi

    IPC分类号： H01L41/18 ,  H01L41/047

    CPC分类号： H01L41/0474 ,  H01L41/0478 ,  H01L41/0833 ,  H01L41/193 ,  H01L41/27

    摘要： A multilayered electroactive polymer (EAP) device and a method of manufacturing the same is provided. The multilayered EAP device includes a plurality of unit layers. Each unit layer includes an EAP layer formed of an electroactive polymer (EAP), a protecting layer configured to prevent a material from penetrating into the EAP layer, and an active electrode formed using a conductive material. The protecting layer may be formed below the active layer or above the active layer. The active electrode may be interposed between two protecting layers.

    摘要翻译： 提供了多层电活性聚合物（EAP）装置及其制造方法。 多层EAP设备包括多个单元层。 每个单元层包括由电活性聚合物（EAP）形成的EAP层，被配置为防止材料渗入EAP层的保护层和使用导电材料形成的有源电极。 保护层可以形成在有源层之下或活性层之上。 有源电极可以介于两个保护层之间。

    Methods of fabricating multi-gate, offset source and drain field effect transistors
    7.
    发明授权
    Methods of fabricating multi-gate, offset source and drain field effect transistors 失效
    制造多栅极，偏移源和漏极场效应晶体管的方法

    公开(公告)号：US5885859A

    公开(公告)日：1999-03-23

    申请号：US960631

    申请日：1997-10-29

    申请人： Min-Koo Han ,  Byung-Hyuk Min ,  Cheol-Min Park ,  Keun-Ho Jang ,  Jae-Hong Jun

    发明人： Min-Koo Han ,  Byung-Hyuk Min ,  Cheol-Min Park ,  Keun-Ho Jang ,  Jae-Hong Jun

    IPC分类号： H01L29/70 ,  H01L21/336 ,  H01L29/08 ,  H01L29/78 ,  H01L29/786 ,  H01L29/788 ,  H01L21/00 ,  H01L21/84 ,  H01L21/338 ,  H01L21/337

    CPC分类号： H01L29/6675 ,  H01L29/0847 ,  H01L29/7831 ,  H01L29/7833 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/788

    摘要： A field effect transistor includes laterally spaced apart source and drain regions in a substrate, laterally spaced apart undoped regions in the substrate between the laterally spaced apart source and drain regions, a doped channel region in the substrate between the laterally spaced apart undoped regions, and a gate insulating layer on the substrate. A main gate is on the gate insulating layer opposite the channel, and first and second sub gates are on the gate insulating layer, a respective one of which is opposite a respective one of the spaced apart undoped regions. The first and second sub gates are laterally spaced apart from and electrically insulated from the main gate. The transistor may be formed by patterning a photoresist layer and a gate layer to form a main gate and first and second sub gates, reflowing the photoresist into the lateral space between the main gate and the first and second sub gates, etching the gate insulating layer using the reflowed photoresist as a mask, and implanting ions into the substrate to form source and drain regions using the etched gate insulating layer as a mask.

    摘要翻译： 场效应晶体管包括在衬底中的横向间隔开的源极和漏极区域，在横向间隔开的源极和漏极区域之间的衬底中横向间隔开的未掺杂区域，在横向间隔开的未掺杂区域之间的衬底中的掺杂沟道区域，以及 基板上的栅极绝缘层。 主栅极在与沟道相对的栅极绝缘层上，第一和第二子栅极位于栅极绝缘层上，其相应的一个与相应的一个间隔开的未掺杂区域相对。 第一和第二子门与主门横向间隔开并与之绝缘。 可以通过图案化光致抗蚀剂层和栅极层来形成晶体管，以形成主栅极和第一和第二子栅极，将光致抗蚀剂回流到主栅极和第一和第二子栅极之间的横向空间中，蚀刻栅极绝缘层 使用回流光致抗蚀剂作为掩模，并且使用蚀刻的栅绝缘层作为掩模将离子注入到衬底中以形成源区和漏区。