摘要:
A microelectronic package comprises a die (110) having a front side (111) containing active circuitry (115) and a back side (112) opposite the front side and a film (120) on the back side of the die. The film has a thickness (121) of at least 20 micrometers, a Young's modulus of at least 10 GPa, and a post-cure glass transition temperature of at least 100° Celsius.
摘要:
Die warpage is controlled for the assembly of thin dies. In one example, a device having a substrate on a back side and components in front side layers is formed. A backside layer is formed over the substrate, the layer resisting warpage of the device when the device is heated. The device is attached to a substrate by heating.
摘要:
Embodiments of the invention relate to a package-on-package (PoP) assembly comprising a top device package and a bottom device package interconnected by way of an electrically interconnected planar stiffener. Embodiments of the invention include a first semiconductor package having a plurality of inter-package contact pads and a plurality of second level interconnect (SLI) pads; a second semiconductor package having a plurality of SLI pads on the bottom side of the package; and a planar stiffener having a first plurality of planar contact pads on the top side of the stiffener electrically connected to the SLI pads of the second package, and a second plurality of planar contact pads electrically connected to the inter-package contact pads of the first package.
摘要:
Embodiments of the invention relate to a package-on-package (PoP) assembly comprising a top device package and a bottom device package interconnected by way of an electrically interconnected planar stiffener. Embodiments of the invention include a first semiconductor package having a plurality of inter-package contact pads and a plurality of second level interconnect (SLI) pads; a second semiconductor package having a plurality of SLI pads on the bottom side of the package; and a planar stiffener having a first plurality of planar contact pads on the top side of the stiffener electrically connected to the SLI pads of the second package, and a second plurality of planar contact pads electrically connected to the inter-package contact pads of the first package.
摘要:
A molding compound for use in an integrated circuit package comprises an epoxy and a thermally conductive filler material. The thermally conductive filler material comprises between 70% and 95% of the molding compound and has a thermal conductivity between 10 W/m-K and 3000 W/m-K.
摘要:
A microelectronic package includes a substrate (110, 210), an interposer (120, 220) having a first surface (121) and an opposing second surface (122), a microelectronic die (130, 230) attached to the substrate, and a mold compound (140) over the substrate. The interposer is electrically connected to the substrate using a wirebond (150). The first surface of the interposer is physically connected to the substrate with an adhesive (160), and the second surface has an electrically conductive contact (126) formed therein. The mold compound completely encapsulates the wirebond and partially encapsulates the interposer such that the electrically conductive contact in the second surface of the interposer remains uncovered by the mold compound.
摘要:
A microelectronic package includes a substrate (110, 210), an interposer (120, 220) having a first surface (121) and an opposing second surface (122), a microelectronic die (130, 230) attached to the substrate, and a mold compound (140) over the substrate. The interposer is electrically connected to the substrate using a wirebond (150). The first surface of the interposer is physically connected to the substrate with an adhesive (160), and the second surface has an electrically conductive contact (126) formed therein. The mold compound completely encapsulates the wirebond and partially encapsulates the interposer such that the electrically conductive contact in the second surface of the interposer remains uncovered by the mold compound.
摘要:
A coating for a microelectronic device comprises a polymer film (131) containing a filler material (232). The polymer film has a thermal conductivity greater than 3 W/m·K and a thickness (133) that does not exceed 10 micrometers. The polymer film may be combined with a dicing tape (310) to form a treatment (300) that simplifies a manufacturing process for a microelectronic package (100) and may be used in order to manage a thermal profile of the microelectronic device.
摘要:
In some embodiments, an adhesive system for supporting thin silicon wafer is presented. In this regard, a method is introduced to bond a silicon wafer to a translucent carrier through the use of an adhesive. Other embodiments are also disclosed and claimed.
摘要:
A microelectronic package includes a substrate (110) having a first die (120) and a second die (130) located thereon, a first thermal interface material (121) located over the first die, and a second thermal interface material (131) located over the second die. The first thermal interface material has a first set of characteristics, the second thermal interface material has a second set of characteristics, and the first set of characteristics is not identical to the second set of characteristics.