公开(公告)号：US06184109B2

公开(公告)日：2001-02-06

申请号：US09234505

申请日：1999-01-21

申请人： Shigeo Sasaki ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Koichi Yazima ,  Hideo Nakayoshi

发明人： Shigeo Sasaki ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Koichi Yazima ,  Hideo Nakayoshi

IPC分类号： H01L21301

CPC分类号： H01L21/6835 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/73 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/181 ,  H01L2924/19041 ,  Y10S438/928 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2924/3512

摘要： Grooves are formed in a surface of a wafer, on which surface semiconductor elements are formed, along dicing lines on the wafer by means of a dicing blade. The grooves are deeper than a thickness of a finished chip. Alternatively, grooves are formed in a surface of a wafer, on which surface semiconductor elements are formed, along chip parting lines on the wafer by etching. Like the grooves described above, the grooves are deeper than a thickness of a finished chip. A holding member is attached on the surface of the wafer on which the semiconductor elements are formed. The bottom surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. When the wafer is divided into the chips, the lapping and polishing is continued until the thickness of the wafer becomes equal to the thickness of the finished chip, even after the wafer has been divided into the chips by the lapping and polishing.

摘要翻译： 通过切割刀片，在晶片的切割线上，在其上形成表面半导体元件的晶片的表面上形成沟槽。 凹槽比成品芯片的厚度更深。 或者，通过蚀刻在晶片上沿芯片分割线在其上形成有表面半导体元件的晶片的表面中形成凹槽。 与上述凹槽一样，凹槽比成品芯片的厚度更深。 保持构件安装在其上形成有半导体元件的晶片的表面上。 将晶片的底表面研磨并抛光至成品芯片的厚度，从而将晶片分成芯片。 当晶片被分成芯片时，即使在通过研磨和抛光将晶片分割成芯片之后，研磨和抛光仍然持续到晶片的厚度等于成品芯片的厚度。

公开(公告)号：US06294439B1

公开(公告)日：2001-09-25

申请号：US09499466

申请日：2000-02-07

申请人： Shigeo Sasaki ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Koichi Yazima ,  Hideo Nakayoshi

发明人： Shigeo Sasaki ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Koichi Yazima ,  Hideo Nakayoshi

IPC分类号： H01L2146

CPC分类号： H01L21/6835 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/181 ,  H01L2924/19041 ,  Y10S438/928 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2924/3512 ,  H01L2924/00012

摘要： Grooves are formed in a surface of a wafer, on which semiconductor elements are formed, along dicing lines or chip parting lines on the wafer. The grooves are deeper than the thickness of a finished chip, and each of them has a curved bottom surface. A holding sheet is attached on the surface of the wafer on which the semiconductor elements are formed. Subsequently, the rear surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. Even after the wafer is divided into the chips, the lapping and polishing is continued until the thickness of the wafer becomes equal to the thickness of the finished chip. The lapping and polishing amount required to attain the thickness of the finished chip after the lapped face of the wafer reaches the bottom surface of the groove, and a depth of a region of the curved bottom surface of the groove define a ratio of not less than 0.3.

摘要翻译： 在晶片的切割线或芯片分型线上形成有半导体元件的晶片的表面上形成槽。 凹槽比成品芯片的厚度更深，并且每个凹槽具有弯曲的底面。 保持片附着在其上形成有半导体元件的晶片的表面上。 随后，将晶片的后表面研磨成最终芯片的厚度，从而将晶片分成芯片。 即使在将晶片分成芯片之后，研磨和研磨仍在继续，直到晶圆厚度等于成品芯片的厚度。 在晶片的研磨面到达凹槽的底面之后获得成品芯片的厚度所需的研磨和研磨量，凹槽的弯曲底面的区域的深度定义为不小于 0.3。

公开(公告)号：US5888883A

公开(公告)日：1999-03-30

申请号：US65626

申请日：1998-04-24

申请人： Shigeo Sasaki ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Koichi Yazima

发明人： Shigeo Sasaki ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Koichi Yazima

IPC分类号： H01L21/301 ,  H01L21/304 ,  H01L21/68 ,  H01L21/78

CPC分类号： H01L21/6835 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L24/73 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/19041

摘要： Grooves are formed in a surface of a wafer, on which surface semiconductor elements are formed, along dicing lines. The grooves are deeper than a thickness of a finished chip. A holding member is attached on the surface of the wafer on which the semiconductor elements are formed. A bottom surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. When the wafer is divided into the chips, the lapping and polishing is continued until the thickness of the wafer becomes equal to the thickness of the finished chip, even after the wafer has been divided into the chips by the lapping and polishing.

摘要翻译： 沟槽沿着切割线形成在其上形成有表面半导体元件的晶片的表面中。 凹槽比成品芯片的厚度更深。 保持构件安装在其上形成有半导体元件的晶片的表面上。 将晶片的底表面研磨并抛光至成品芯片的厚度，从而将晶片分成芯片。 当晶片被分成芯片时，即使在通过研磨和抛光将晶片分割成芯片之后，研磨和抛光仍然持续到晶片的厚度等于成品芯片的厚度。

公开(公告)号：US06337258B1

公开(公告)日：2002-01-08

申请号：US09620709

申请日：2000-07-20

申请人： Hideo Nakayoshi ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Tetsuya Kurosawa

发明人： Hideo Nakayoshi ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Tetsuya Kurosawa

IPC分类号： H01L2146

CPC分类号： H01L21/3043 ,  H01L21/78 ,  H01L2224/32245 ,  H01L2224/48465 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83194 ,  H01L2924/01079 ,  H01L2924/01322

摘要： Grooves are formed in an element formation surface of a wafer along dicing lines or chip dividing lines. The grooves are deeper than a thickness of a finished chip. A holding member is attached on the element formation surface of the wafer. A bottom surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. The chips are transferred while being held by porous adsorption.

摘要翻译： 沟槽沿着切割线或芯片分割线形成在晶片的元件形成表面中。 凹槽比成品芯片的厚度更深。 保持构件附接在晶片的元件形成表面上。 将晶片的底表面研磨并抛光至成品芯片的厚度，从而将晶片分成芯片。 在通过多孔吸附保持时转移芯片。

公开(公告)号：US20110068480A1

公开(公告)日：2011-03-24

申请号：US12730007

申请日：2010-03-23

申请人： Hidekazu Hayashi ,  Hiroshi Tomita ,  Junya Sagara ,  Shinya Takyu ,  Norihiro Togasaki ,  Tetsuya Kurosawa ,  Yukiko Kitajima

发明人： Hidekazu Hayashi ,  Hiroshi Tomita ,  Junya Sagara ,  Shinya Takyu ,  Norihiro Togasaki ,  Tetsuya Kurosawa ,  Yukiko Kitajima

IPC分类号： H01L23/12 ,  C08K3/34 ,  C08L63/00 ,  C08K3/10

CPC分类号： C09J163/00 ,  C08K3/08 ,  C08K5/0091 ,  C08L63/00 ,  H01L23/3121 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/29 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/732 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01088 ,  H01L2924/0665 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/45099 ,  H01L2224/05599

摘要： The present invention provides a semiconductor device which comprises a substrate, a first semiconductor chip on a substrate, a second semiconductor chip on the first semiconductor chip, and an adhesive sheet between the first and second semiconductor chips. The second semiconductor chip has a mirrored back surface, and the adhesive sheet contains a metal impurity ion trapping agent.

摘要翻译： 本发明提供一种半导体器件，其包括衬底，衬底上的第一半导体芯片，第一半导体芯片上的第二半导体芯片以及第一和第二半导体芯片之间的粘合片。 第二半导体芯片具有镜像背面，并且粘合片含有金属杂质离子捕获剂。

公开(公告)号：US07631680B2

公开(公告)日：2009-12-15

申请号：US10911511

申请日：2004-08-05

申请人： Tetsuya Kurosawa ,  Shinya Takyu

发明人： Tetsuya Kurosawa ,  Shinya Takyu

IPC分类号： B32B38/10 ,  H01L21/46

CPC分类号： H01L21/6835 ,  H01L21/67132 ,  H01L21/6836 ,  H01L2221/68322 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/6839 ,  Y10T29/41 ,  Y10T156/1132 ,  Y10T156/1168 ,  Y10T156/1944

摘要： An adhesive tape peeling mechanism has an adhering section and a porous member. The adhering section adheres to a segmented semiconductor wafer bonded to adhesive tape. The porous member is provided on the surface adhering to the semiconductor wafer of the adhering section. The porous member is divided into at least two adhering areas in the direction in which the adhesive tape is peeled. The porous member adheres to the semiconductor wafer by suction and fixes the wafer in place.

摘要翻译： 胶带剥离机构具有粘接部和多孔部件。 粘合部分粘合到粘合到胶带上的分段半导体晶片。 多孔构件设置在粘附到粘合部的半导体晶片的表面上。 多孔构件沿着剥离胶带的方向分成至少两个粘合区域。 多孔构件通过抽吸粘附到半导体晶片上并将晶片固定就位。

公开(公告)号：US20050003636A1

公开(公告)日：2005-01-06

申请号：US10815934

申请日：2004-04-02

申请人： Shinya Takyu ,  Tetsuya Kurosawa ,  Kinya Mochida ,  Kenichi Watanabe

发明人： Shinya Takyu ,  Tetsuya Kurosawa ,  Kinya Mochida ,  Kenichi Watanabe

IPC分类号： H01L21/301 ,  H01L21/304 ,  H01L21/58 ,  H01L21/68 ,  H01L21/78 ,  H01L21/44 ,  H01L21/46 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L21/6835 ,  H01L21/304 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2221/6839 ,  H01L2224/274 ,  H01L2224/2919 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/3512

摘要： A manufacturing method of a semiconductor device includes: providing a groove having a thickness equal to or larger than a finishing thickness on a first surface of a semiconductor wafer on which a semiconductor element is formed; affixing a PSA tape onto the first surface of the semiconductor wafer in which the groove is formed; reducing the thickness of the semiconductor wafer by processing a second surface opposite to the first surface of the semiconductor wafer onto which the PSA tape is affixed, so as to separate the semiconductor wafer into a plurality of semiconductor chips on which the semiconductor element is formed; affixing an adhesive layer onto an entire rear surface of the separated semiconductor wafer; cutting the adhesive layer so as to separate the adhesive layer for each of the semiconductor chips; and peeling off the PSA tape from the semiconductor wafer while fixing the semiconductor wafer under suction by use of a porous member segmented into at least two sucking areas.

摘要翻译： 半导体器件的制造方法包括：在其上形成有半导体元件的半导体晶片的第一表面上设置具有等于或大于精加工厚度的厚度的凹槽; 将PSA胶带固定到形成有所述凹槽的所述半导体晶片的所述第一表面上; 通过处理与固定有PSA带的半导体晶片的第一表面相对的第二表面来减小半导体晶片的厚度，以将半导体晶片分离成形成半导体元件的多个半导体芯片; 将粘合剂层附着在所分离的半导体晶片的整个后表面上; 切割粘合剂层以分离每个半导体芯片的粘合剂层; 以及通过使用分段在至少两个吸引区域中的多孔构件将半导体晶片固定在吸力下，同时从半导体晶片剥离PSA带。

公开(公告)号：US07482695B2

公开(公告)日：2009-01-27

申请号：US11826286

申请日：2007-07-13

申请人： Shinya Takyu ,  Kazuhiro Iizuka ,  Mika Kiritani

发明人： Shinya Takyu ,  Kazuhiro Iizuka ,  Mika Kiritani

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/6836 ,  H01L24/73 ,  H01L25/0657 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/83191 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06575 ,  H01L2225/06582 ,  H01L2924/01013 ,  H01L2924/15311 ,  H01L2924/16195 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor chip having an adhesive layer previously formed on an element forming surface thereof and having a bump exposed from the surface of the adhesive layer is wire-bonded to a printed circuit board. Another semiconductor chip is stacked on the above semiconductor chip with the adhesive layer disposed therebetween and is wire-bonded to the printed circuit board by wire bonding. Likewise, at least one semiconductor chip is sequentially stacked on the thus attained semiconductor structure to form a stack MCP.

摘要翻译： 具有预先形成在其元件形成表面上并且具有从粘合剂层的表面暴露的凸起的粘合剂层的半导体芯片被引线接合到印刷电路板。 将另一半导体芯片堆叠在上述半导体芯片上，其中粘合剂层设置在它们之间，并且通过引线接合引线接合到印刷电路板。 同样地，至少一个半导体芯片顺序堆叠在如此获得的半导体结构上以形成堆叠MCP。

公开(公告)号：US07294558B2

公开(公告)日：2007-11-13

申请号：US11072331

申请日：2005-03-07

申请人： Noriko Shimizu ,  Shinya Takyu ,  Tetsuya Kurosawa

发明人： Noriko Shimizu ,  Shinya Takyu ,  Tetsuya Kurosawa

IPC分类号： H01L21/30 ,  B26B7/10 ,  B26F3/00

CPC分类号： B28D5/0011 ,  B23K26/364 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  H01L21/304 ,  H01L21/78 ,  Y10T83/041 ,  Y10T225/30

摘要： A starting point for cleavage made up of at least one of a groove and a through hole is formed on a chip dividing line or a dicing line along the cleaved surface of a wafer. Liquid matter is injected into the starting point. Then, the liquid matter is changed by applying an external factor that changes the liquid matter physically. Making use of the change, the wafer is cleaved so as to divide the wafer into semiconductor chips.

摘要翻译： 沿着切割面的芯片分割线或切割线形成由凹槽和通孔中的至少一个构成的切割的起始点。 将液体物质注入起点。 然后，通过施加物理地改变液体物质的外部因素来改变液体物质。 利用该变化，晶片被切割以将晶片分成半导体芯片。

公开(公告)号：US20050023260A1

公开(公告)日：2005-02-03

申请号：US10846673

申请日：2004-05-17

申请人： Shinya Takyu ,  Tetsuya Kurosawa ,  Ninao Sato

发明人： Shinya Takyu ,  Tetsuya Kurosawa ,  Ninao Sato

IPC分类号： B23K26/38 ,  B23K26/40 ,  B28D5/00 ,  H01L21/00 ,  B23K26/14

CPC分类号： H01L21/67092 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B28D5/0011

摘要： A semiconductor device manufacturing apparatus includes etching equipment, damage forming equipment, dividing equipment and removing equipment. The etching equipment etches a film formed on an element forming surface of a semiconductor wafer, thereby defining a dicing line or a chip-dividing line. The damage forming equipment forms damage layers used as starting points to divide a semiconductor wafer into discrete semiconductor chips on a rear surface side of the semiconductor wafer which is opposite to an element forming surface. The dividing equipment divides the semiconductor wafer into discrete semiconductor chips with the damage layers used as the starting points. The removing equipment removes a rear surface portion of the semiconductor wafer to at least a depth where the damage layers are no more present.

摘要翻译： 半导体器件制造装置包括蚀刻设备，损坏形成设备，分割设备和移除设备。 蚀刻设备蚀刻形成在半导体晶片的元件形成表面上的膜，从而限定切割线或切屑分割线。 损伤形成设备形成用作起点的损伤层，以将半导体晶片分成与元件形成表面相对的半导体晶片的背面侧上的分立半导体芯片。 分割设备将半导体晶片分为分立半导体芯片，其中损伤层用作起点。 去除设备将半导体晶片的后表面部分移至至少不存在损伤层的深度。