摘要:
A vibration wave detector having a first diaphragm for receiving vibration waves, such as sound waves and so on, to be propagated in a medium, a resonant unit having a plurality of cantilever resonators each having such a length as to resonate at an individual predetermined frequency, a retaining rod for retaining the resonant unit, a second diaphragm positioned on the opposite side of the first diaphragm with respect to the retaining rod, and a vibration intensity detector for detecting the vibration intensity, for each predetermined frequency, of each of the resonators, by the vibration waves received by the first diaphragm and propagated to the resonant unit through the retaining rod.
摘要:
A vibration wave detector in which: a plurality of resonator beams, each having a different length and being allowed to resonate at a specific frequency, are provided; a piezoresistor is installed in each resonator beam; and the piezoresistors are parallel-connected so that vibration is converted to an electric signal by the piezoresistors so as to output the sum of vibration waveforms at the respective resonator beams. It is possible to control a gain of a specific frequency band by changing a voltage to be applied to the parallel circuit or changing the resistance value of each piezoresistor.
摘要:
A vibration wave detector, having a receiver for receiving vibration waves such as sound waves and so on to be propagated in a medium, a resonant unit having a plurality of cantilever resonators each having such a length as to resonate at an individual predetermined frequency, a retaining rod for retaining the resonant unit, a vibration intensity detector for detecting the vibration intensity, for each predetermined frequency, of each of the resonators, by the vibration waves received by the receiver and propagated to the resonant unit by way of the retaining rod.
摘要:
A vibration wave detector, having a receiver for receiving vibration waves such as sound waves and so on to be propagated in a medium, a resonant unit having a plurality of cantilever resonators each having such a length as to resonate at an individual predetermined frequency, a retaining rod for retaining the resonant unit, a vibration intensity detector for detecting the vibration intensity, for each predetermined frequency, of each of the resonators, by the vibration waves received by the receiver and propagated to the resonant unit by way of the retaining rod.
摘要:
Disclosed is a pickup method in which a first suction unit is caused to approach and come into contact with a chip adhered to an adhesive sheet, and a second suction unit which is formed with a concavity on a contact surface configured to come into contact with the adhesive sheet is caused to approach and come into contact with the adhesive sheet in such a manner as to be opposite to the first suction unit. The adhesive sheet is sucked by the second suction unit that is in contact with the adhesive sheet, and a fluid is injected between the adhesive sheet and the chip by an injection unit. As a result, the adhesive sheet is detached from a portion of the chip opposite to the concavity, and in the state where the chip is being sucked by the first suction unit, the first suction unit is caused to be spaced away from the adhesive sheet that is being sucked by the second suction unit. In this manner, the chip is detached and picked up from the adhesive sheet.
摘要:
A wall surface of a film forming container is heated to or above a vaporization temperature of a material monomer, which is used to form an organic film, by using an external heater formed along the wall surface of the film forming container, substrates are heated to a thermal polymerization reaction temperature by using an internal heater that is disposed apart from the external heater and near a substrate-supporting container in which the substrates are received, and the organic film is formed through thermal polymerization occurring on the substrates by supplying the material monomer into the film forming container.
摘要:
A method for manufacturing a probe needle having beams and a contactor placed on tips of the beams comprises preparing a Si wafer 20, forming a seed layer 21 on the Si wafer 20, and forming grooves in a desired shape of the beams on the seed layer 21 by patterning a photoresist 23. Subsequently, the grooves are filled up with metal-plated layers 24a, 24b to form the desired shape of beams.
摘要:
A capacitor having a high quality and a manufacturing method of the same are provided. A capacitor has a lower electrode formed on an oxide film, a dielectric layer formed on the lower electrode, an upper electrode formed so as to face the lower electrode with the dielectric layer between, and an upper electrode formed so as to cover the upper electrode, an opening portion of the upper electrode and an opening portion of the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to pattern the dielectric layer by using the upper electrode as a mask, and provide a capacitor having a high-quality dielectric layer by preventing impurity diffusion into the dielectric layer. By forming the upper electrode on the dielectric layer, it is possible to prevent the dielectric layer from being exposed to etching liquid, liquid developer, etc.
摘要:
A dielectric film capacitor includes a lower electrode having an opening and formed of a material including platinum, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film. The planar area of the lower electrode is 50% or more of the area of a formation region of the dielectric film. A dielectric film capacitor includes a lower electrode formed of a material including platinum and having a thickness of 10 to 100 nm, a dielectric film provided over the lower electrode and including an oxide having an ABOx crystal structure, and an upper electrode provided over the dielectric film.
摘要:
The method includes forming a hole penetrating from one surface of a substrate to an electrode formed on the other surface of the substrate; forming an organic insulating film in the hole; removing at least a part of the organic insulating film formed in a bottom portion of the hole and not the organic insulating film formed on a side wall portion of the hole, to expose the electrode; cleaning an exposed surface of the electrode by using plasma of an inert gas; filling a conductive metal in the hole; removing at least a part of a surface of the organic insulating film by the reaction of oxygen plasma; and annealing the substrate in a dysoxidative atmosphere.