公开(公告)号：US08909021B2

公开(公告)日：2014-12-09

申请号：US13521605

申请日：2010-02-01

Applicant: Shinichi Saito ,  Masahiro Aoki ,  Toshiki Sugawara

Inventor： Shinichi Saito ,  Masahiro Aoki ,  Toshiki Sugawara

IPC: G02B6/00 ,  G02B6/36 ,  H01S5/30 ,  G02F1/225 ,  H01S5/02 ,  G02B6/122 ,  B82Y20/00 ,  G02B6/12 ,  G02F1/21 ,  H01S5/042 ,  H01S5/32 ,  H01S5/12

CPC classification number: G02B6/122 ,  B82Y20/00 ,  G02B2006/12097 ,  G02B2006/12178 ,  G02F1/218 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/12 ,  G02F2202/06 ,  G02F2202/09 ,  G02F2202/105 ,  G02F2203/06 ,  H01S5/021 ,  H01S5/0424 ,  H01S5/12 ,  H01S5/3027 ,  H01S5/3202

Abstract: Disclosed is a silicon optical waveguide having a small optical loss and no polarization dependency. The silicon optical waveguide is formed on a silicon substrate with an embedded oxide film therebetween, the plane orientation of the surface of the silicon optical waveguide is the (110) plane, the plane orientation of the side wall is the (111) plane, and the recesses and projections of the side wall are planarized at an atomic level.

Abstract translation: 公开了具有小光损耗并且没有偏振依赖性的硅光波导。 硅光波导形成在其上具有埋入氧化膜的硅衬底上，硅光波导表面的平面取向为（110）面，侧壁的面取向为（111）面， 侧壁的凹部和突起在原子级平坦化。

公开(公告)号：US08680553B2

公开(公告)日：2014-03-25

申请号：US13129115

申请日：2009-10-21

Applicant: Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawara

Inventor： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawara

IPC: H01L33/34

CPC classification number: H01S5/3201 ,  H01L31/103 ,  H01L31/1808 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/125 ,  H01S5/3223 ,  Y02E10/50

Abstract: An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

Abstract translation: 本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。 根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层 ，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄型半导体层的另一端与 以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜 。

公开(公告)号：US20120288228A1

公开(公告)日：2012-11-15

申请号：US13521605

申请日：2010-02-01

Applicant: Shinichi Saito ,  Masahiro Aoki ,  Toshiki Sugawara

Inventor： Shinichi Saito ,  Masahiro Aoki ,  Toshiki Sugawara

IPC: G02B6/12

CPC classification number: G02B6/122 ,  B82Y20/00 ,  G02B2006/12097 ,  G02B2006/12178 ,  G02F1/218 ,  G02F1/2257 ,  G02F2001/212 ,  G02F2201/12 ,  G02F2202/06 ,  G02F2202/09 ,  G02F2202/105 ,  G02F2203/06 ,  H01S5/021 ,  H01S5/0424 ,  H01S5/12 ,  H01S5/3027 ,  H01S5/3202

Abstract: Disclosed is a silicon optical waveguide having a small optical loss and no polarization dependency. The silicon optical waveguide is formed on a silicon substrate with an embedded oxide film therebetween, the plane orientation of the surface of the silicon optical waveguide is the (110) plane, the plane orientation of the side wall is the (111) plane, and the recesses and projections of the side wall are planarized at an atomic level.

Abstract translation: 公开了具有小光损耗并且没有偏振依赖性的硅光波导。 硅光波导形成在其上具有埋入氧化膜的硅衬底上，硅光波导表面的平面取向为（110）面，侧壁的面取向为（111）面， 侧壁的凹部和突起在原子级平坦化。

公开(公告)号：US08755423B2

公开(公告)日：2014-06-17

申请号：US12759024

申请日：2010-04-13

Applicant: Koichiro Adachi ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Masahiro Aoki

Inventor： Koichiro Adachi ,  Yasunobu Matsuoka ,  Toshiki Sugawara ,  Masahiro Aoki

IPC: H01S5/00

CPC classification number: H01S5/18 ,  G02B6/322 ,  G02B6/4214 ,  G02B6/423 ,  H01S5/0207 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/0267 ,  H01S5/12 ,  H01S5/18311

Abstract: In order to provide a compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged, a light emitting diode that is included in the optical module and emits light in a vertical direction with respect to a principal surface of a semiconductor substrate is provided with a lens integrated into a light emitting region, and a retaining section integrated to surround the light emitting region. Accordingly, readiness in alignment of the light emitting diode and an optical fiber, which guides light emitted from the light emitting diode, with each other is upgraded. Eventually, the compact optical module permitting highly efficient optical coupling and having components thereof highly densely packaged can be provided.

Abstract translation: 为了提供一种紧凑的光学模块，其允许高效光耦合并且具有高密度封装的部件，包括在光学模块中并相对于半导体衬底的主表面沿垂直方向发光的发光二极管是 设置有集成到发光区域中的透镜，以及整合在围绕发光区域的保持部分。 因此，升级了将发光二极管发出的光引导的发光二极管与光纤对准的准备状态。 最终，可以提供允许高效光耦合并且具有高密度封装的部件的紧凑型光学模块。

公开(公告)号：US08036533B2

公开(公告)日：2011-10-11

申请号：US12254036

申请日：2008-10-20

Applicant: Kazuhiko Hosomi ,  Misuzu Sagawa ,  Toshiki Sugawara ,  Masahiro Aoki

Inventor： Kazuhiko Hosomi ,  Misuzu Sagawa ,  Toshiki Sugawara ,  Masahiro Aoki

IPC: H04J14/02

CPC classification number: G02B6/4215 ,  G02B6/29367 ,  H04J14/02

Abstract: An optical element mounting substrate where a plurality of light emitting elements have been mounted on the same plane, a lens array for collimating a plurality of light emitted from the plurality of light emitting elements, and a wavelength multiplexing/demultiplexing device are prepared. The wavelength multiplexing/demultiplexing device has typically mounted both a wavelength selecting filter and a mirror on front and rear planes of a transparent substrate. These three components are mounted within a package at a desirable angle position. Optical axes of respective wavelengths of the wavelength multiplexing/demultiplexing device are determined based upon a thickness and an angle of the light emitting element mounting substrate, and are arrayed on a straight line of a horizontal plane. As a consequence, if the respective light emitting elements are arranged on the optical axes which are exclusively determined by a design work, then optical multiplexing/demultiplexing operations can be carried out.

Abstract translation: 准备了将多个发光元件安装在同一平面上的光学元件安装基板，准备从多个发光元件发出的多个光的透镜阵列和波长复用/解复用器件。 波长复用/解复用装置通常在透明基板的前面和后面平面上安装波长选择滤光器和反射镜。 这三个部件以期望的角度位置安装在包装内。 基于发光元件安装基板的厚度和角度确定波长多路复用/解复用装置的各个波长的光轴，并排列在水平面的直线上。 结果，如果各个发光元件被布置在专门由设计工作确定的光轴上，则可以执行光复用/解复用操作。

公开(公告)号：US20090103923A1

公开(公告)日：2009-04-23

申请号：US12254036

申请日：2008-10-20

Applicant: Kazuhiko HOSOMI ,  Misuzu Sagawa ,  Toshiki Sugawara ,  Masahiro Aoki

Inventor： Kazuhiko HOSOMI ,  Misuzu Sagawa ,  Toshiki Sugawara ,  Masahiro Aoki

IPC: H04J14/02

CPC classification number: G02B6/4215 ,  G02B6/29367 ,  H04J14/02

Abstract: An optical element mounting substrate where a plurality of light emitting elements have been mounted on the same plane, a lens array for collimating a plurality of light emitted from the plurality of light emitting elements, and a wavelength multiplexing/demultiplexing device are prepared. The wavelength multiplexing/demultiplexing device has typically mounted both a wavelength selecting filter and a mirror on front and rear planes of a transparent substrate. These three components are mounted within a package at a desirable angle position. Optical axes of respective wavelengths of the wavelength multiplexing/demultiplexing device are determined based upon a thickness and an angle of the light emitting element mounting substrate, and are arrayed on a straight line of a horizontal plane. As a consequence, if the respective light emitting elements are arranged on the optical axes which are exclusively determined by a design work, then optical multiplexing/demultiplexing operations can be carried out.

Abstract translation: 准备了将多个发光元件安装在同一平面上的光学元件安装基板，准备从多个发光元件发出的多个光的透镜阵列和波长复用/解复用器件。 波长复用/解复用装置通常在透明基板的前面和后面平面上安装波长选择滤光器和反射镜。 这三个部件以期望的角度位置安装在包装内。 基于发光元件安装基板的厚度和角度确定波长多路复用/解复用装置的各个波长的光轴，并排列在水平面的直线上。 结果，如果各个发光元件被布置在专门由设计工作确定的光轴上，则可以执行光复用/解复用操作。

公开(公告)号：US20110227116A1

公开(公告)日：2011-09-22

申请号：US13129115

申请日：2009-10-21

Applicant: Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawa

Inventor： Shinichi Saito ,  Masahiro Aoki ,  Nobuyuki Sugii ,  Katsuya Oda ,  Toshiki Sugawa

IPC: H01L33/34 ,  H01L33/60 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01S5/3201 ,  H01L31/103 ,  H01L31/1808 ,  H01S5/0208 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0264 ,  H01S5/0424 ,  H01S5/1032 ,  H01S5/1231 ,  H01S5/125 ,  H01S5/3223 ,  Y02E10/50

Abstract: An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.

Abstract translation: 本发明的目的是提供一种可以通过使用普通硅工艺容易地在诸如硅的衬底上形成的锗激光二极管，并且能够有效发光。 根据本发明的锗发光器件是锗激光二极管，其特征在于将拉伸应变施加到作为直接转变型的发光层的单晶锗，由硅制成的薄半导体层 ，锗或锗锗与锗发光层的两端相邻连接，薄型半导体层具有能够防止量子限制效应发生的一定程度的厚度，薄半导体层的另一端与 以高浓度掺杂有杂质的厚电极，电极被掺杂成ap型和n型，形成波导以不与电极直接接触，并且在波导的端部形成反射镜 。

公开(公告)号：US20090090925A1

公开(公告)日：2009-04-09

申请号：US12245077

申请日：2008-10-03

Applicant: Shinichi Saito ,  Masahiro Aoki ,  Hiroyuki Uchiyama ,  Hideo Arimoto ,  Noriyuki Sakuma ,  Jiro Yamamoto

Inventor： Shinichi Saito ,  Masahiro Aoki ,  Hiroyuki Uchiyama ,  Hideo Arimoto ,  Noriyuki Sakuma ,  Jiro Yamamoto

IPC: H01L33/00

CPC classification number: H01S5/12 ,  B82Y20/00 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/1237 ,  H01S5/125 ,  H01S5/18341 ,  H01S5/3004 ,  H01S5/3427 ,  H01S2301/176 ,  H01S2302/00

Abstract: There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof. The silicon laser device is an ultrathin silicon laser that includes a first electrode unit injecting electrons, a second electrode unit injecting holes, a light emitting unit electrically connected to the first electrode unit and the second electrode unit, wherein the light emitting unit is made of single-crystal silicon and has a first surface (top surface) and a second surface (bottom surface) opposed to the first surface, a waveguide made of a first dielectric, which is disposed in the vicinity of the light emitting unit, by setting surface directions of the first and second surfaces as a surface (100) and thinning a thickness of the light emitting unit in a direction perpendicular to the first and second surfaces, and a mirror formed by alternately adjoining the first dielectric and a second dielectric.

Abstract translation: 存在具有诸如硅等离子体的硅组合半导体的硅激光器装置，其等同于由硅制成的衬底上作为基本构成元件的硅等，通过使用能够容易地形成硅激光器件的方法， 通用硅工艺及其制造方法。 硅激光器件是一种超薄硅激光器，其包括注入电子的第一电极单元，注入空穴的第二电极单元，与第一电极单元和第二电极单元电连接的发光单元，其中发光单元由 单晶硅，并且具有与第一表面相对的第一表面（顶表面）和第二表面（底表面），通过设置在发光单元附近的由第一电介质制成的波导 第一表面和第二表面的方向作为表面（100），并且在垂直于第一和第二表面的方向上减薄发光单元的厚度，以及通过交替地邻接第一电介质和第二电介质而形成的反射镜。

公开(公告)号：US07816702B2

公开(公告)日：2010-10-19

申请号：US12245077

申请日：2008-10-03

Applicant: Shinichi Saito ,  Masahiro Aoki ,  Hiroyuki Uchiyama ,  Hideo Arimoto ,  Noriyuki Sakuma ,  Jiro Yamamoto

Inventor： Shinichi Saito ,  Masahiro Aoki ,  Hiroyuki Uchiyama ,  Hideo Arimoto ,  Noriyuki Sakuma ,  Jiro Yamamoto

IPC: H01L33/00

CPC classification number: H01S5/12 ,  B82Y20/00 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/1237 ,  H01S5/125 ,  H01S5/18341 ,  H01S5/3004 ,  H01S5/3427 ,  H01S2301/176 ,  H01S2302/00

Abstract: There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof. The silicon laser device is an ultrathin silicon laser that includes a first electrode unit injecting electrons, a second electrode unit injecting holes, a light emitting unit electrically connected to the first electrode unit and the second electrode unit, wherein the light emitting unit is made of single-crystal silicon and has a first surface (top surface) and a second surface (bottom surface) opposed to the first surface, a waveguide made of a first dielectric, which is disposed in the vicinity of the light emitting unit, by setting surface directions of the first and second surfaces as a surface (100) and thinning a thickness of the light emitting unit in a direction perpendicular to the first and second surfaces, and a mirror formed by alternately adjoining the first dielectric and a second dielectric.

Abstract translation: 存在具有诸如硅等离子体的硅组合半导体的硅激光器装置，其等同于由硅制成的衬底上作为基本构成元件的硅等，通过使用能够容易地形成硅激光器件的方法， 通用硅工艺及其制造方法。 硅激光器件是一种超薄硅激光器，其包括注入电子的第一电极单元，注入空穴的第二电极单元，与第一电极单元和第二电极单元电连接的发光单元，其中发光单元由 单晶硅，并且具有与第一表面相对的第一表面（顶表面）和第二表面（底表面），通过设置在发光单元附近的由第一电介质制成的波导 第一表面和第二表面的方向作为表面（100），并且在垂直于第一和第二表面的方向上减薄发光单元的厚度，以及通过交替地邻接第一电介质和第二电介质而形成的反射镜。

公开(公告)号：US08449160B2

公开(公告)日：2013-05-28

申请号：US12849352

申请日：2010-08-03

Applicant: Kenichi Tanaka ,  Masahiro Aoki ,  Tsukuru Ohtoshi

Inventor： Kenichi Tanaka ,  Masahiro Aoki ,  Tsukuru Ohtoshi

IPC: F21V7/04

CPC classification number: G02B6/4204 ,  G02B27/0994 ,  G02B27/1006 ,  G02B27/104 ,  G02B27/123 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/4012 ,  H01S5/4093 ,  H04N9/3129 ,  H04N9/3161

Abstract: A multi-wavelength light emitting device includes the following three sections; a light source section having multiple luminous points that emit multiple light beams, a condenser lens section that concentrates the light beams emitted from the luminous points, and a light guide section that propagates superposedly and mixedly the light beams concentrated by the condenser lens section after emission thereof from the luminous points.

Abstract translation: 多波长发光器件包括以下三个部分; 具有发射多个光束的多个发光点的光源部分，聚集从发光点发射的光束的聚光透镜部分和在发射之后叠加并混合由聚光透镜部分聚集的光束的导光部分 来自发光点。