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    Reflective semiconductor optical amplifier with constant gain versus wavelength
    3.
    发明授权
    Reflective semiconductor optical amplifier with constant gain versus wavelength 有权
    具有恒定增益对波长的反射半导体光放大器

    公开(公告)号：US09001415B2

    公开(公告)日：2015-04-07

    申请号：US12824653

    申请日：2010-06-28

    申请人： Shinsuke Tanaka

    发明人： Shinsuke Tanaka

    IPC分类号： H01S5/00 ,  H01S5/50 ,  H01S5/10 ,  H01S5/20

    CPC分类号： H01S5/5018 ,  H01S5/101 ,  H01S5/1085 ,  H01S5/2018 ,  H01S5/5045

    摘要： A semiconductor optical amplifier includes a semiconductor substrate; an active layer that includes a first region and a second region formed over the semiconductor substrate; and a reflection part that is formed along the second region and includes a first portion that reflects a first wavelength light and a second portion that reflects a second wavelength light with an optical gain lower than an optical gain of the first wavelength light; wherein, the first portion is formed closer to the first region side than the second portion.

    摘要翻译： 半导体光放大器包括半导体衬底; 有源层，其包括形成在所述半导体衬底上的第一区域和第二区域; 以及反射部，其沿着所述第二区域形成并且包括反射第一波长光的第一部分和以比所述第一波长光的光学增益低的光增益反射第二波长光的第二部分; 其中，所述第一部分形成为比所述第二部分更靠近所述第一区域侧。

    Indwelling apparatus for body cavity introducing device and body cavity introducing device placing system
    4.
    发明授权
    Indwelling apparatus for body cavity introducing device and body cavity introducing device placing system 有权
    体腔引入装置和体腔引入装置放置系统的留置装置

    公开(公告)号：US08790248B2

    公开(公告)日：2014-07-29

    申请号：US11884669

    申请日：2006-07-20

    申请人： Akio Uchiyama ,  Hironobu Takizawa ,  Shinsuke Tanaka ,  Katsumi Hirakawa ,  Takeshi Yokoi

    发明人： Akio Uchiyama ,  Hironobu Takizawa ,  Shinsuke Tanaka ,  Katsumi Hirakawa ,  Takeshi Yokoi

    IPC分类号： A61B1/00

    CPC分类号： A61B1/00036 ,  A61B1/00029 ,  A61B1/00147 ,  A61B1/041 ,  A61B5/073 ,  A61B5/6879 ,  A61B2560/0209

    摘要： An indwelling apparatus (5) for holding a capsule endoscope (3) is arranged with a control device (57) including an optical sensor (73), a control board (66) configuring a controller and a reset circuit, a driver board (68) configuring an electromagnet driver, and an electromagnet (70), where when the optical sensor (73) detects the light, the controller performs the drive control of the electromagnet (70) at every constant time interval to turn ON the reed switch (14) and supply power to the capsule endoscope (3) thereby operating the capsule endoscope (3) only when observation is necessary, and thus the battery drain of the capsule endoscope is reduced.

    摘要翻译： 用于保持胶囊型内窥镜（3）的留置装置（5）配置有包括光学传感器（73），构成控制器和复位电路的控制基板（66）的控制装置（57），驱动器板 ）和电磁体（70），其中当所述光学传感器（73）检测到所述光时，所述控制器以每个恒定时间间隔执行所述电磁体（70）的驱动控制以接通所述舌簧开关（14） ），并且仅在需要观察时才向胶囊型内窥镜（3）供电，从而操作胶囊型内窥镜（3），因此能够减小胶囊型内窥镜的电池消耗。

    Optical semiconductor device and manufacturing method therefor
    5.
    发明授权
    Optical semiconductor device and manufacturing method therefor 有权

    公开(公告)号：US08547630B2

    公开(公告)日：2013-10-01

    申请号：US12498425

    申请日：2009-07-07

    申请人： Shinsuke Tanaka

    发明人： Shinsuke Tanaka

    IPC分类号： H01S5/00

    CPC分类号： H01L33/58 ,  G02B6/4206 ,  G02B6/4208 ,  G02B6/4225 ,  G02B6/4226 ,  H01S3/10023

    摘要： A manufacturing method for an optical semiconductor device, including disposing a semiconductor element that has a polarization dependent gain or polarization dependent loss between optical waveguide modes differing in the direction of polarization, positioning a lens at one end face side of the semiconductor element based on an optical coupling loss between the lens and the semiconductor element, and repositioning the lens based on the polarization dependent gain or the polarization dependent loss of the semiconductor element.

    Semiconductor optical amplifier
    9.
    发明授权
    Semiconductor optical amplifier 有权
    半导体光放大器

    公开(公告)号：US07859746B2

    公开(公告)日：2010-12-28

    申请号：US12191418

    申请日：2008-08-14

    申请人： Ken Morito ,  Susumu Yamazaki ,  Shinsuke Tanaka

    发明人： Ken Morito ,  Susumu Yamazaki ,  Shinsuke Tanaka

    IPC分类号： H01S5/343

    CPC分类号： H01S5/1082 ,  H01S5/1014 ,  H01S5/1085 ,  H01S5/32366 ,  H01S5/50 ,  H01S5/5009 ,  H01S2301/02

    摘要： A polarization-independent SOA is provided which uses an InP substrate (11) as a semiconductor substrate and uses GaInNAs having introduced tensile strain as an active layer (14). With this configuration, the polarization independence is achieved by introducing the tensile strain, and high saturation optical output power is realized by reducing the film thickness of the active layer (14) as well as the gain peak wavelength is increased by reducing the band gap of the active layer (14) through use of GaInNAs made by adding nitrogen (N) to GaInAs as a material of the active layer (14) so as to achieve high gain especially in C-band and L-band even when band filling exits at the time of injecting a high current into the active layer (14).

    摘要翻译： 提供了使用InP衬底（11）作为半导体衬底并且使用具有引入的拉伸应变的GaInNA作为有源层（14）的偏振无关的SOA。 通过这种结构，通过引入拉伸应变来实现极化独立性，并且通过降低有源层（14）的膜厚度来实现高饱和光输出功率，并且通过降低有源层（14）的带隙来增加增益峰值波长 通过使用通过将氮（N）添加到GaInAs作为有源层（14）的材料而制成的GaInNA，以便即使在带填充离开时也实现高增益，特别是在C带和L带中，有源层（14） 将高电流注入有源层（14）的时间。