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    Integrated circuit device and electronic instrument
    1.
    发明申请
    Integrated circuit device and electronic instrument 审中-公开
    集成电路器件和电子仪器

    公开(公告)号：US20080252634A1

    公开(公告)日：2008-10-16

    申请号：US12081008

    申请日：2008-04-09

    申请人： Shinya Sato ,  Takayuki Saiki ,  Hiroyuki Takamiya ,  Masaaki Abe

    发明人： Shinya Sato ,  Takayuki Saiki ,  Hiroyuki Takamiya ,  Masaaki Abe

    IPC分类号： G06F3/038 ,  H03K19/0175

    CPC分类号： H03K19/00315

    摘要： An integrated circuit device includes a first circuit block that includes low-voltage transistors (LVTr) and operates using a first high-potential power supply voltage and a first low-potential power supply voltage, a second circuit block that includes low-voltage transistors (LVTr) and operates using a second high-potential power supply voltage and a second low-potential power supply voltage that differ in power supply system from the first circuit block, and an interface circuit (I/O buffer) provided between the first circuit block and the second circuit block. The interface circuit (I/O buffer) includes medium-voltage transistors (MVTr: transistors of which the thickness of the gate insulating film is larger than that of the low-voltage transistors (LVTr)). An electrostatic discharge protection circuit formed of bidirectional diodes is provided between a first and second low-potential power supply nodes.

    摘要翻译： 集成电路器件包括包括低压晶体管（LVTr）的第一电路块，并且使用第一高电位电源电压和第一低电位电源电压进行操作，第二电路块包括低压晶体管（ LVTr），并且使用电源系统与第一电路块不同的第二高电位电源电压和第二低电位电源电压进行操作，以及设置在第一电路块之间的接口电路（I / O缓冲器） 和第二电路块。 接口电路（I / O缓冲器）包括中压晶体管（MVTr：栅极绝缘膜的厚度大于低压晶体管的厚度（LVTr）的晶体管）。 在第一和第二低电位电源节点之间设置由双向二极管形成的静电放电保护电路。

    Integrated circuit device and electronic instrument
    3.
    发明授权
    Integrated circuit device and electronic instrument 有权
    集成电路器件和电子仪器

    公开(公告)号：US07974051B2

    公开(公告)日：2011-07-05

    申请号：US12081004

    申请日：2008-04-09

    申请人： Shinya Sato ,  Takayuki Saiki ,  Hiroyuki Takamiya

    发明人： Shinya Sato ,  Takayuki Saiki ,  Hiroyuki Takamiya

    IPC分类号： H02H9/00

    CPC分类号： H01L27/0251

    摘要： An interface circuit is provided between a first circuit block and a second circuit block that operates using a power supply system differing from that of the first circuit block. An electrostatic discharge protection circuit that include a PN diode and a diffused resistor is formed in order to prevent electrostatic discharge destruction of a gate insulating film of a transistor that forms the interface circuit. The electrostatic discharge protection circuit may be formed using the remaining basic cells of a gate array that forms the second circuit block. An electrostatic discharge protection circuit formed of a bidirectional diode may be connected between a first low-potential power supply and a second low-potential power supply.

    摘要翻译： 在第一电路块和使用不同于第一电路块的电源系统的电源系统操作的第二电路块之间提供接口电路。 形成包括PN二极管和扩散电阻器的静电放电保护电路，以防止形成接口电路的晶体管的栅极绝缘膜的静电放电破坏。 可以使用形成第二电路块的门阵列的剩余基本单元形成静电放电保护电路。 由双向二极管形成的静电放电保护电路可以连接在第一低电位电源和第二低电位电源之间。

    Silicon carbide single crystal wafer and manufacturing method for same
    6.
    发明授权
    Silicon carbide single crystal wafer and manufacturing method for same 有权
    碳化硅单晶晶片及其制造方法相同

    公开(公告)号：US09234297B2

    公开(公告)日：2016-01-12

    申请号：US14241623

    申请日：2012-08-29

    申请人： Shinya Sato ,  Tatsuo Fujimoto ,  Hiroshi Tsuge ,  Masakazu Katsuno

    发明人： Shinya Sato ,  Tatsuo Fujimoto ,  Hiroshi Tsuge ,  Masakazu Katsuno

    IPC分类号： B32B3/02 ,  C30B23/02 ,  C30B29/36 ,  C30B23/00 ,  H01L29/16

    CPC分类号： C30B23/02 ,  C30B23/00 ,  C30B29/36 ,  H01L29/1608 ,  Y10T428/21

    摘要： Provided are a method for manufacturing a SiC single crystal having high crystal quality and, in particular, extremely low screw dislocation density and a SiC single crystal ingot obtained by the method. In particular, provided is a silicon carbide single crystal substrate that is a substrate cut from a bulk silicon carbide single crystal grown by the Physical Vapior Transport (PVT) method, in which the screw dislocation density is smaller in the peripheral region than in the center region, so that screw dislocations are partially reduced.The method is a method for manufacturing a SiC single crystal by the PVT method using a seed crystal and the ingot is a SiC single crystal ingot obtained by the method. Particularly, the silicon carbide single crystal substrate is a silicon carbide single crystal substrate in which when, by representing the diameter of the substrate as R, a center circle region having a diameter of 0.5×R centered around a center point O of the substrate and a doughnut-shaped peripheral region remaining by excluding the center circle region are defined, the average value of screw dislocation densities observed in the doughnut-shaped peripheral region is 80% or less of the average value of screw dislocation densities observed in the center circle region.

    摘要翻译： 提供一种制造具有高结晶质量，特别是极低螺旋位错密度的SiC单晶的方法和通过该方法获得的SiC单晶锭。 特别地，提供了碳化硅单晶基板，其是从通过物理运输（PVT）方法生长的块状碳化硅单晶切割的基板，其中在周边区域中的螺旋位错密度小于中心 区域，使得螺旋位错部分减少。 该方法是通过使用晶种的PVT方法制造SiC单晶的方法，并且该锭是通过该方法获得的SiC单晶锭。 特别地，碳化硅单晶衬底是碳化硅单晶衬底，其中当通过将衬底的直径表示为R时，以衬底的中心点O为中心的直径为0.5×R的中心圆区域， 定义了通过排除中心圆区域而剩余的环状周边区域，在圆环状周边区域观察到的螺旋位错密度的平均值为在中心圆区域观察到的螺旋位错密度的平均值的80％以下 。

    Liquid crystal optical element and optical pickup apparatus
    7.
    发明授权
    Liquid crystal optical element and optical pickup apparatus 有权
    液晶光学元件和光学拾取装置

    公开(公告)号：US08891034B2

    公开(公告)日：2014-11-18

    申请号：US12413414

    申请日：2009-03-27

    申请人： Yoshiharu Takane ,  Shinya Sato ,  Nobuhiro Sato

    发明人： Yoshiharu Takane ,  Shinya Sato ,  Nobuhiro Sato

    IPC分类号： G02F1/133 ,  G02F1/13 ,  G09G3/36 ,  G02B5/18 ,  G11B7/1369 ,  G11B7/1353

    CPC分类号： G11B7/1353 ,  G02B5/1828 ,  G11B7/1369

    摘要： A liquid crystal optical element having a crystal liquid optical element adapted to positively function as a diffraction element and an optical pickup apparatus including the liquid crystal optical element are disclosed. A transparent electrode having a diffraction pattern is arranged on one of a pair of transparent substrates. A liquid crystal panel has a transparent opposed electrode arranged on the other one of the pair of the transparent substrates. A driving unit generates a phase difference distribution in the liquid crystal layer by generating a potential difference between the transparent electrode and the transparent opposed electrode and causes the liquid crystal panel to function as a diffraction element for diffracting the incoming light beam transmitted therethrough. The diffraction pattern or the transparent opposed electrode is divided into a plurality of regions. The driving unit adjusts the potential difference for each of the regions.

    摘要翻译： 公开了一种液晶光学元件，其具有适用于作为衍射元件的结晶液体光学元件和包括该液晶光学元件的光学拾取装置。 具有衍射图案的透明电极设置在一对透明基板中的一个上。 液晶面板具有布置在一对透明基板中的另一个上的透明相对电极。 驱动单元通过产生透明电极和透明相对电极之间的电位差而在液晶层中产生相位差分布，并使液晶面板用作用于衍射透射入射光束的衍射元件。 衍射图案或透明相对电极被分成多个区域。 驱动单元调整每个区域的电位差。

    UREA SOLUTION REFORMER AND EXHAUST GAS PURIFIER USING SAME
    9.
    发明申请
    UREA SOLUTION REFORMER AND EXHAUST GAS PURIFIER USING SAME 有权
    UREA解决方案改造器和使用相同的排气净化器

    公开(公告)号：US20140047821A1

    公开(公告)日：2014-02-20

    申请号：US14005096

    申请日：2012-03-14

    申请人： Yoshihiro Kawada ,  Shinya Sato ,  Mitsuru Hosoya ,  Kazunori Takahashi ,  Hiroshi Inoue

    发明人： Yoshihiro Kawada ,  Shinya Sato ,  Mitsuru Hosoya ,  Kazunori Takahashi ,  Hiroshi Inoue

    IPC分类号： F01N3/10

    CPC分类号： F01N3/10 ,  B01J29/072 ,  B01J35/04 ,  B01J37/0246 ,  F01N3/2066 ,  F01N2240/25 ,  F01N2240/40 ,  F01N2610/02 ,  F01N2610/06 ,  F01N2610/08 ,  F01N2610/10 ,  F01N2610/14 ,  F01N2610/1453 ,  Y02T10/24

    摘要： Disclosed is a urea solution reformer and an exhaust gas purifier using the same, configured to heat a carrier gas supplied from a carrier gas source by a carrier gas heating unit (16), to inject the carrier gas heated by the carrier gas heating unit from a carrier gas injecting nozzle (17), and to cause a urea solution (18) to be supplied by a first urea solution supply nozzle (21) to a tip end of the carrier gas injecting nozzle so that the urea solution is atomized by the carrier gas injected from the carrier gas injecting nozzle. Provided to face toward the carrier gas injecting nozzle is a catalyst unit (23) for decomposing the atomized urea solution to reform it into an ammonia gas. Further provided is an ammonia gas supply nozzle (24) attached to an exhaust pipe (12) of an engine so as to supply the ammonia gas discharged from an outlet of the catalyst unit into the exhaust pipe. The urea solution is sufficiently atomized, and thus reformed into an ammonia gas by the catalyst unit with a good efficiency.

    摘要翻译： 公开了一种尿素溶液重整器和使用该尿素溶液重整器的废气净化器，其被构造成通过载气加热单元（16）加热由载气源供给的载气，以将由载气加热单元加热的载气从 载气注入喷嘴（17），并且通过第一尿素溶液供给喷嘴（21）将尿素溶液（18）供给到载气注入喷嘴的前端，使得尿素溶液被 从载气喷射喷嘴喷射载气。 面向载气注入喷嘴的是用于分解雾化的尿素溶液以将其重整成氨气的催化剂单元（23）。 还提供了附接到发动机的排气管（12）的氨气供给喷嘴（24），以将从催化剂单元的出口排出的氨气供应到排气管中。 尿素溶液充分雾化，由此，催化剂单元以良好的效率将氨气体重整成氨气。

    Test apparatus and test method
    10.
    发明授权
    Test apparatus and test method 有权
    试验装置及试验方法

    公开(公告)号：US07904765B2

    公开(公告)日：2011-03-08

    申请号：US11857449

    申请日：2007-09-19

    申请人： Masahiko Hata ,  Shinya Sato

    发明人： Masahiko Hata ,  Shinya Sato

    IPC分类号： G11C29/38 ,  G11C29/50

    CPC分类号： G11C29/56 ,  G11C16/04 ,  G11C29/006 ,  G11C2029/0401 ,  G11C2029/5602

    摘要： Provided is a test apparatus including: test signal supply sections supplying a test signal writing test data to the connected memory under test, to a terminal of the memory; terminal correspondence determination sections outputting a terminal unit determination result indicating whether test data from the connected terminal matches an expected value; a determination result selection section selecting, for each memory, terminal unit determination results from the terminal correspondence determination sections; a memory correspondence determination section determining whether writing succeeded to each memory, based on the selection result by the determination result selection section; an identifying section identifying a test signal supply section connected to the memory to which writing succeeded and a test signal supply section connected to the memory to which writing failed; and a mask treatment section instructing each test signal supply section whether to perform re-testing, according to whether writing succeeded.

    摘要翻译： 提供了一种测试装置，包括：测试信号提供部分，将测试信号提供给连接的被测试的存储器，将测试数据写入存储器的终端; 终端对应确定部分，输出指示来自所连接终端的测试数据是否匹配期望值的终端单元确定结果; 确定结果选择部分，从终端对应确定部分为每个存储器选择终端单元确定结果; 存储器对应决定部，基于所述判定结果选择部的选择结果，确定是否对每个存储器进行写入; 识别部分，识别连接到写入成功的存储器的测试信号提供部分和连接到写入失败的存储器的测试信号提供部分; 以及掩模处理部，根据写入是否成功指示每个测试信号提供部分是否执行重新测试。