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11 条记录 (耗时 0.023 秒)

    Fire-retardant polymer composition
    3.
    发明授权
    Fire-retardant polymer composition 失效
    阻燃聚合物组合物

    公开(公告)号：US5942561A

    公开(公告)日：1999-08-24

    申请号：US610134

    申请日：1996-02-29

    申请人： Fumio Okisaki ,  Akinori Hamada ,  Shunichi Endo ,  Genichiro Ochiai

    发明人： Fumio Okisaki ,  Akinori Hamada ,  Shunichi Endo ,  Genichiro Ochiai

    IPC分类号： C08K3/04 ,  C08K3/32 ,  C09K21/14

    CPC分类号： C08K3/04 ,  C08K3/32

    摘要： A fire-retardant polymer composition is provided which comprises 100 parts by weight of a polymer such as polystyrene, 1 to 30 parts by weight of heat-expandable graphite, and 1 to 30 parts by weight of a phosphorus compound. The polymer composition is fire-retardant, and emits less smoke and less corrosive gas on burning.

    摘要翻译： 提供了一种阻燃聚合物组合物，其包含100重量份聚合物如聚苯乙烯，1〜30重量份的热膨胀性石墨和1〜30重量份的磷化合物。 聚合物组合物是阻燃剂，并且在燃烧时排出较少的烟雾和较少的腐蚀性气体。

    Fire-retardant polymer composition
    4.
    发明授权
    Fire-retardant polymer composition 失效
    阻燃聚合物组合物

    公开(公告)号：US6017987A

    公开(公告)日：2000-01-25

    申请号：US17241

    申请日：1998-02-02

    申请人： Fumio Okisaki ,  Akinori Hamada ,  Shunichi Endo ,  Genichiro Ochiai

    发明人： Fumio Okisaki ,  Akinori Hamada ,  Shunichi Endo ,  Genichiro Ochiai

    IPC分类号： C08K3/04 ,  C08K3/22 ,  C08K3/10

    CPC分类号： C08K3/22 ,  C08K3/04

    摘要： A novel fire-retardant polymer composition is provided which comprises 100 parts by weight of a polymer such as polyolefins and polystyrenes, 1-30 parts by weight of an oxide or a complex oxide of metals such as antimony, boron, and molybdenum, and 1-30 parts by weight of heat-expandable graphite. The fire-retardant polymer composition emits less amounts of smoke and corrosive gas on burning with the characteristics of the polymer material kept unimpaired.

    摘要翻译： 提供了一种新型阻燃聚合物组合物，其包含100重量份聚合物如聚烯烃和聚苯乙烯，1-30重量份的氧化物或金属如锑，硼和钼的复合氧化物和1 -30重量份的热膨胀性石墨。 阻燃聚合物组合物在燃烧时发射较少量的烟雾和腐蚀性气体，同时保持不受损害的聚合物材料的特性。

    Slat band chain and sprocket
    5.
    发明授权
    Slat band chain and sprocket 失效
    板条链和链轮

    公开(公告)号：US5797820A

    公开(公告)日：1998-08-25

    申请号：US967191

    申请日：1997-10-29

    申请人： Shunichi Endo

    发明人： Shunichi Endo

    IPC分类号： B65G17/08 ,  F16G13/02 ,  B65G17/06

    CPC分类号： B65G17/08 ,  B65G2201/02

    摘要： The present invention provides a slat band chain for both straight and curved lines and a sprocket made of synthetic resin which the chain can engage with every other tooth of the sprocket. At least three reinforcement ribs 24a-24c connecting the front curled portions 14 with the rear curled portions 16 are installed. The width B, and the length C, of the rear curled portions in the feeding direction are set to the intermediate value of those conventional slat band chains for straight and curved lines.

    摘要翻译： 本发明提供了一种用于直线和弯曲线的板条带链和由合成树脂制成的链轮，链条可与链轮的每隔一个齿啮合。 安装连接前卷曲部分14和后卷曲部分16的至少三个加强肋24a-24c。 后卷曲部分在进给方向上的宽度B和长度C被设定为用于直线和曲线的那些常规板条带的中间值。

    Semiconductor device having a fluorine-added carbon film as an inter-layer insulating film
    6.
    发明授权
    Semiconductor device having a fluorine-added carbon film as an inter-layer insulating film 失效
    具有氟加成膜作为层间绝缘膜的半导体装置

    公开(公告)号：US06429518B1

    公开(公告)日：2002-08-06

    申请号：US09659342

    申请日：2000-09-12

    申请人： Shunichi Endo

    发明人： Shunichi Endo

    IPC分类号： H01L2348

    CPC分类号： H01L21/02167 ,  H01L21/0212 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0445 ,  H01L21/3127 ,  H01L21/3146 ,  H01L21/31612 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a semiconductor device, a contact layer is provided between a silicon-containing insulating film SiO2, etc. or a metal wiring layer, and a fluorine-containing carbon CF film to increase their adhesion. For this purpose, SiC film deposition gases, such as SiH4 gas and C2H4 gas, are excited into plasma to stack a SiC film [200] as the contact layer on the top surface of a SiO2 film [110]. After that, switching of deposition gases is conducted for about 1 second by introducing SiH4 gas, C2H4 gas, C4F8 gas and C2H4 gas. Subsequently, CF film deposition gases, such as C4F8 gas and C2H4 gas, for example, are excited into plasma to deposit[e] a CF film [120] on the SiC film [200]. In this way, both the SiC film deposition gases and the CF film deposition gases exist simultaneously during the deposition gas switching step, whereby Si—C bonds are produced near the boundary between the SiC film [200] and the CF film [120] across these films, and they enhance adhesion between these films and hence increase adhesion of the SiO2 film [110] and the CF film [120].

    摘要翻译： 在半导体器件中，在含硅绝缘膜SiO 2等或金属布线层和含氟碳CF膜之间设置接触层以增加其粘合性。 为此，将SiC膜沉积气体如SiH 4气体和C 2 H 4气体激发到等离子体中以将SiO 2膜[200]作为接触层堆叠在SiO 2膜的顶表面上[110]。 之后，通过引入SiH 4气体，C 2 H 4气体，C 4 F 8气体和C 2 H 4气体，沉积气体的切换进行约1秒。 随后，诸如C 4 F 8气体和C 2 H 4气体的CF膜沉积气体例如被激发到等离子体中以在SiC膜[200]上沉积CF膜[120]。 以这种方式，在沉积气体切换步骤期间，同时存在SiC膜沉积气体和CF膜沉积气体，由此在SiC膜[200]和CF膜[120]之间的边界附近产生Si-C键 这些膜，并且它们增强了这些膜之间的粘附性，因此增加了SiO 2膜[110]和CF膜[120]的粘附性。

    Plasma film forming method utilizing varying bias electric power
    8.
    发明授权
    Plasma film forming method utilizing varying bias electric power 失效
    使用不同偏置电力的等离子体成膜方法

    公开(公告)号：US06468603B1

    公开(公告)日：2002-10-22

    申请号：US09663715

    申请日：2000-09-18

    申请人： Shunichi Endo ,  Tadashi Hirata

    发明人： Shunichi Endo ,  Tadashi Hirata

    IPC分类号： C23C1626

    CPC分类号： H01L21/0212 ,  C23C16/26 ,  H01L21/02274 ,  H01L21/3127 ,  H01L21/76837

    摘要： This invention is a method of: making a film-forming gas including a compound gas of carbon and fluorine into plasma in a vacuum container 2 including a stage 4 for an object to be processed 10; and applying a bias electric power to the stage 4 in order to draw ions in the plasma toward the object 10 while forming an insulation film consisting of a film of fluorine-added carbon onto the object 10 by the plasma. At first, a first electric power of the bias electric power is applied to the stage 4 and the compound gas of carbon and fluorine is introduced at a first flow rate to form the film of fluorine-added carbon onto the object 10. Then, a second electric power of the bias electric power smaller than the first electric power is applied to the stage 4 and the compound gas of carbon and fluorine is introduced at a second flow rate smaller than the first flow rate to form the film of fluorine-added carbon onto the object 10. According to the invention, in the case of filling up a concave portion having a high aspect ratio with a film of fluorine-added carbon, the film-forming process can be conducted while generating less voids with a raised throughput.

    摘要翻译： 本发明是一种在包括用于待处理物体10的台架4的真空容器2中将包括碳和氟的复合气体的成膜气体制成等离子体的方法; 并且为了将等离子体中的离子朝向物体10施加偏置电力，同时通过等离子体将由氟加成碳膜构成的绝缘膜形成在物体10上。 首先，将偏置电力的第一电力施加到载物台4，并以第一流量引入碳氟的复合气体，以在对象10上形成氟加成膜的膜。然后，将 将第一功率小于第一功率的偏置电力的第二电力施加到载物台4，并以比第一流量小的第二流量引入碳氟化合物气体，以形成氟加成膜 根据本发明，在用含氟碳膜填充具有高纵横比的凹部的情况下，可以在产生较少的具有提高的生产量的空隙的同时进行成膜过程。

    Process for the production of semiconductor device
    9.
    发明授权
    Process for the production of semiconductor device 失效
    半导体器件生产工艺

    公开(公告)号：US06727182B2

    公开(公告)日：2004-04-27

    申请号：US09101308

    申请日：1998-10-15

    申请人： Takashi Akahori ,  Shuichi Ishizuka ,  Shunichi Endo ,  Takeshi Aoki ,  Tadashi Hirata

    发明人： Takashi Akahori ,  Shuichi Ishizuka ,  Shunichi Endo ,  Takeshi Aoki ,  Tadashi Hirata

    IPC分类号： H01L21302

    CPC分类号： H01L21/31144 ,  H01L21/31138 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： It is an object of the present invention to provide a process for a fluorine containing carbon film (a CF film), which can put an interlayer insulator film of a fluorine containing carbon film into practice. A conductive film, e.g., a TiN film 41, is formed on a CF film 4. After a pattern of a resist film 42 is formed thereon, the TiN film 41 is etched with, e.g., BCl3 gas. Thereafter, when the surface of the wafer is irradiated with O2 plasma, the CF film is chemically etched, and the resist film 42 is also etched. However, since the TiN film 41 functions as a mask, a predetermined hole can be formed. Although an interconnection layer of aluminum or the like is formed on the surface of the CF film 4, the TiN film 41 functions as an adhesion layer for adhering the interconnection layer to the CF film 4 and serves as a part of the interconnection layer. As the mask, an insulator film of SiO2 or the like may be substituted for the film.

    摘要翻译： 本发明的目的是提供一种可以将含氟碳膜的层间绝缘膜实际应用的含氟碳膜（CF膜）的方法。 在CF膜4上形成例如TiN膜41的导电膜。在其上形成抗蚀剂膜42的图案之后，用例如BCl 3气体蚀刻TiN膜41。 此后，当用O 2等离子体照射晶片的表面时，对CF膜进行化学蚀刻，并且还蚀刻抗蚀剂膜42。 然而，由于TiN膜41用作掩模，因此可以形成预定的孔。 尽管在CF膜4的表面上形成了铝等的互连层，但是TiN膜41用作将互连层粘附到CF膜4并用作互连层的一部分的粘附层。 作为掩模，可以用SiO 2等的绝缘膜代替膜。