公开(公告)号：US07064064B2

公开(公告)日：2006-06-20

申请号：US11058783

申请日：2005-02-16

申请人： Shyng-Tsong Chen ,  Timothy J. Dalton ,  Kenneth M. Davis ,  Chao-Kun Hu ,  Fen F. Jamin ,  Steffen K. Kaldor ,  Mahadevaiyer Krishnan ,  Kaushik Kumar ,  Michael F. Lofaro ,  Sandra G. Malhotra ,  Chandrasekhar Narayan ,  David L. Rath ,  Judith M. Rubino ,  Katherine L. Saenger ,  Andrew H. Simon ,  Sean P. E. Smith ,  Wei-tsu Tseng

发明人： Shyng-Tsong Chen ,  Timothy J. Dalton ,  Kenneth M. Davis ,  Chao-Kun Hu ,  Fen F. Jamin ,  Steffen K. Kaldor ,  Mahadevaiyer Krishnan ,  Kaushik Kumar ,  Michael F. Lofaro ,  Sandra G. Malhotra ,  Chandrasekhar Narayan ,  David L. Rath ,  Judith M. Rubino ,  Katherine L. Saenger ,  Andrew H. Simon ,  Sean P. E. Smith ,  Wei-tsu Tseng

IPC分类号： H01L21/44

CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/76847 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit structure is disclosed that has a layer of logical and functional devices and an interconnection layer above the layer of logical and functional devices. The interconnection layer has a substrate, conductive features within the substrate and caps positioned only above the conductive features.

摘要翻译： 公开了一种集成电路结构，其具有逻辑和功能器件层以及逻辑和功能器件层之上的互连层。 互连层具有衬底，衬底内的导电特征和仅位于导电特征之上的盖。

公开(公告)号：US06975032B2

公开(公告)日：2005-12-13

申请号：US10319967

申请日：2002-12-16

申请人： Shyng-Tsong Chen ,  Timothy J. Dalton ,  Kenneth M. Davis ,  Chao-Kun Hu ,  Fen F. Jamin ,  Steffen K. Kaldor ,  Mahadevaiyer Krishnan ,  Kaushik Kumar ,  Michael F. Lofaro ,  Sandra G. Malhotra ,  Chandrasekhar Narayan ,  David L. Rath ,  Judith M. Rubino ,  Katherine L. Saenger ,  Andrew H. Simon ,  Sean P. E. Smith ,  Wei-tsu Tseng

发明人： Shyng-Tsong Chen ,  Timothy J. Dalton ,  Kenneth M. Davis ,  Chao-Kun Hu ,  Fen F. Jamin ,  Steffen K. Kaldor ,  Mahadevaiyer Krishnan ,  Kaushik Kumar ,  Michael F. Lofaro ,  Sandra G. Malhotra ,  Chandrasekhar Narayan ,  David L. Rath ,  Judith M. Rubino ,  Katherine L. Saenger ,  Andrew H. Simon ,  Sean P. E. Smith ,  Wei-tsu Tseng

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/48

CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/76847 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit structure is disclosed that has a layer of logical and functional devices and an interconnection layer above the layer of logical and functional devices. The interconnection layer has a substrate, conductive features within the substrate and caps positioned only above the conductive features.

公开(公告)号：US20050158985A1

公开(公告)日：2005-07-21

申请号：US11058783

申请日：2005-02-16

申请人： Shyng-Tsong Chen ,  Timothy Dalton ,  Kenneth Davis ,  Chao-Kun Hu ,  Fen Jamin ,  Steffen Kaldor ,  Mahadevaiyer Krishnan ,  Kaushik Kumar ,  Michael Lofaro ,  Sandra Malhotra ,  Chandrasekhar Narayan ,  David Rath ,  Judith Rubino ,  Katherine Saenger ,  Andrew Simon ,  Sean Smith ,  Wei-tsu Tseng

发明人： Shyng-Tsong Chen ,  Timothy Dalton ,  Kenneth Davis ,  Chao-Kun Hu ,  Fen Jamin ,  Steffen Kaldor ,  Mahadevaiyer Krishnan ,  Kaushik Kumar ,  Michael Lofaro ,  Sandra Malhotra ,  Chandrasekhar Narayan ,  David Rath ,  Judith Rubino ,  Katherine Saenger ,  Andrew Simon ,  Sean Smith ,  Wei-tsu Tseng

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/44 ,  H01L21/4763 ,  H01L21/48

CPC分类号： H01L21/76849 ,  H01L21/76834 ,  H01L21/76847 ,  H01L21/76883 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： An integrated circuit structure is disclosed that has a layer of logical and functional devices and an interconnection layer above the layer of logical and functional devices. The interconnection layer has a substrate, conductive features within the substrate and caps positioned only above the conductive features.

摘要翻译： 公开了一种集成电路结构，其具有逻辑和功能器件层以及逻辑和功能器件层之上的互连层。 互连层具有衬底，衬底内的导电特征和仅位于导电特征之上的盖。

公开(公告)号：US20050127514A1

公开(公告)日：2005-06-16

申请号：US10731377

申请日：2003-12-08

申请人： Shyng-Tsong Chen ,  Stefanie Chiras ,  Matthew Colburn ,  Timothy Dalton ,  Jeffrey Hedrick ,  Elbert Huang ,  Kaushik Kumar ,  Michael Lane ,  Kelly Malone ,  Chandrasekhar Narayan ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Robert Rosenberg ,  Christy Tyberg ,  Roy Yu

发明人： Shyng-Tsong Chen ,  Stefanie Chiras ,  Matthew Colburn ,  Timothy Dalton ,  Jeffrey Hedrick ,  Elbert Huang ,  Kaushik Kumar ,  Michael Lane ,  Kelly Malone ,  Chandrasekhar Narayan ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Robert Rosenberg ,  Christy Tyberg ,  Roy Yu

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/40

CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.

摘要翻译： 在多电平微电子集成电路中，空气包括永久线路电介质，超低K材料通过电介质。 在通过清洁热分解除去牺牲材料并通过IC结构中的孔隙率辅助副产物扩散后，将空气供应到线路电平。 任选地，空气也包括在通孔级电介质中的孔隙中。 通过将空气结合到本发明产生的程度，使层内和层间介电值最小化。

公开(公告)号：US20060264036A1

公开(公告)日：2006-11-23

申请号：US11491816

申请日：2006-07-24

申请人： Shyng-Tsong Chen ,  Stefanie Chiras ,  Matthew Colburn ,  Tomothy Dalton ,  Jeffrey Hedrick ,  Elbert Huang ,  Kaushik Kumar ,  Michael Lane ,  Kelly Malone ,  Chandrasekhar Narayan ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Robert Rosenberg ,  Christy Tyberg ,  Roy Yu

发明人： Shyng-Tsong Chen ,  Stefanie Chiras ,  Matthew Colburn ,  Tomothy Dalton ,  Jeffrey Hedrick ,  Elbert Huang ,  Kaushik Kumar ,  Michael Lane ,  Kelly Malone ,  Chandrasekhar Narayan ,  Satyanarayana Nitta ,  Sampath Purushothaman ,  Robert Rosenberg ,  Christy Tyberg ,  Roy Yu

IPC分类号： H01L21/4763

CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.

摘要翻译： 在多电平微电子集成电路中，空气包括永久线路电介质，超低K材料通过电介质。 在通过清洁热分解除去牺牲材料并通过IC结构中的孔隙率辅助副产物扩散后，将空气供应到线路电平。 任选地，空气也包括在通孔级电介质中的孔隙中。 通过将空气结合到本发明产生的程度，使层内和层间介电值最小化。

公开(公告)号：US07084479B2

公开(公告)日：2006-08-01

申请号：US10731377

申请日：2003-12-08

申请人： Shyng-Tsong Chen ,  Stefanie Ruth Chiras ,  Matthew Earl Colburn ,  Timothy Joseph Dalton ,  Jeffrey Curtis Hedrick ,  Elbert Emin Huang ,  Kaushik Arun Kumar ,  Michael Wayne Lane ,  Kelly Malone ,  Chandrasekhar Narayan ,  Satyanarayana Venkata Nitta ,  Sampath Purushothaman ,  Robert Rosenburg ,  Christy Sensenich Tyberg ,  Roy RongQing Yu

发明人： Shyng-Tsong Chen ,  Stefanie Ruth Chiras ,  Matthew Earl Colburn ,  Timothy Joseph Dalton ,  Jeffrey Curtis Hedrick ,  Elbert Emin Huang ,  Kaushik Arun Kumar ,  Michael Wayne Lane ,  Kelly Malone ,  Chandrasekhar Narayan ,  Satyanarayana Venkata Nitta ,  Sampath Purushothaman ,  Robert Rosenburg ,  Christy Sensenich Tyberg ,  Roy RongQing Yu

IPC分类号： H01L29/00 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L23/5222 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a multilevel microelectronic integrated circuit, air comprises permanent line level dielectric and ultra low-K materials are via level dielectric. The air is supplied to line level subsequent to removal of sacrificial material by clean thermal decomposition and assisted diffusion of byproducts through porosities in the IC structure. Optionally, air is also included within porosities in the via level dielectric. By incorporating air to the extent produced in the invention, intralevel and interlevel dielectric values are minimized.

公开(公告)号：US07486845B2

公开(公告)日：2009-02-03

申请号：US11870463

申请日：2007-10-11

申请人： Charles T. Black ,  Gian-Luca Bona ,  Timothy J. Dalton ,  Nicholas C. M. Fuller ,  Roland Germann ,  Maurice McGlashan-Powell ,  Chandrasekhar Narayan ,  Robert L. Sandstorm

发明人： Charles T. Black ,  Gian-Luca Bona ,  Timothy J. Dalton ,  Nicholas C. M. Fuller ,  Roland Germann ,  Maurice McGlashan-Powell ,  Chandrasekhar Narayan ,  Robert L. Sandstorm

IPC分类号： G02B6/00 ,  G02B6/10

CPC分类号： G02B6/126 ,  B29D11/00759 ,  G02B6/136 ,  G02B2006/1215

摘要： A method in effectuating the redirection of light which is propagated within a waveguide, and which eliminates the necessity for a bending of the waveguide, or the drawbacks encountered in directional changes in propagated light involving the need for sharp curves of essentially small-sized radii, which would resultingly lead to excessive losses in light. In this connection, the method relates to the fabricating and the provision of a wire-grid polarization beam splitter within an optical waveguide, which utilizes a diblock copolymer template to formulate the wire-grid.

摘要翻译： 实现在波导内传播的光的重定向并且消除波导的弯曲的必要性的方法或者涉及需要基本上小的半径的尖锐曲线的传播光的方向性变化中遇到的缺点， 这将导致轻微的过度损失。 在这方面，该方法涉及在光波导内制造和提供线栅偏振分束器，其利用二嵌段共聚物模板来配制线栅。

公开(公告)号：US20080175527A1

公开(公告)日：2008-07-24

申请号：US11870463

申请日：2007-10-11

申请人： Charles T. Black ,  Gian-Luca Bona ,  Timothy J. Dalton ,  Nicholas C. M. Fuller ,  Roland Germann ,  Maurice McGlashan-Powell ,  Chandrasekhar Narayan ,  Robert L. Sandstrom

发明人： Charles T. Black ,  Gian-Luca Bona ,  Timothy J. Dalton ,  Nicholas C. M. Fuller ,  Roland Germann ,  Maurice McGlashan-Powell ,  Chandrasekhar Narayan ,  Robert L. Sandstrom

IPC分类号： G02B6/00

CPC分类号： G02B6/126 ,  B29D11/00759 ,  G02B6/136 ,  G02B2006/1215

摘要： A method in effectuating the redirection of light which is propagated within a waveguide, and which eliminates the necessity for a bending of the waveguide, or the drawbacks encountered in directional changes in propagated light involving the need for sharp curves of essentially small-sized radii, which would resultingly lead to excessive losses in light. In this connection, the method relates to the fabricating and the provision of a wire-grid polarization beam splitter within an optical waveguide, which utilizes a diblock copolymer template to formulate the wire-grid.

摘要翻译： 实现在波导内传播的光的重定向并且消除波导的弯曲的必要性的方法或者涉及需要基本上小的半径的尖锐曲线的传播光的方向性变化中遇到的缺点， 这将导致轻微的过度损失。 在这方面，该方法涉及在光波导内制造和提供线栅偏振分束器，其利用二嵌段共聚物模板来配制线栅。

公开(公告)号：US06927472B2

公开(公告)日：2005-08-09

申请号：US09992344

申请日：2001-11-14

申请人： David K. Anderson ,  Tien-Jen Cheng ,  Timothy J. Dalton ,  Christopher V. Jahnes ,  Andrew Lu ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant ,  George F. Walker

发明人： David K. Anderson ,  Tien-Jen Cheng ,  Timothy J. Dalton ,  Christopher V. Jahnes ,  Andrew Lu ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant ,  George F. Walker

IPC分类号： H01L23/525 ,  H01L21/336

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for a fuse structure comprises an insulator layer, a plurality of fuse electrodes extending through the insulator layer to an underlying wiring layer, an electroplated fuse element connected to the electrodes, and an interface wall. The fuse element is positioned external to the insulator, with a gap juxtaposed between the insulator and the fuse element. The interface wall further comprises a first side wall, a second side wall, and an inner wall, wherein the inner wall is disposed within the gap. The fuse electrodes are diametrically opposed to one another, and the fuse element is perpendicularly disposed above the fuse electrodes. The fuse element is either electroplatted, electroless plated, or is an ultra thin fuse.

公开(公告)号：US06924185B2

公开(公告)日：2005-08-02

申请号：US10680618

申请日：2003-10-07

申请人： David K. Anderson ,  Tien-Jen Cheng ,  Timothy J. Dalton ,  Christopher V. Jahnes ,  Andrew Lu ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant ,  George F. Walker

发明人： David K. Anderson ,  Tien-Jen Cheng ,  Timothy J. Dalton ,  Christopher V. Jahnes ,  Andrew Lu ,  Chandrasekhar Narayan ,  Kevin S. Petrarca ,  Richard P. Volant ,  George F. Walker

IPC分类号： H01L23/525 ,  H01L21/336

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and structure for a fuse structure comprises an insulator layer, a plurality of fuse electrodes extending through the insulator layer to an underlying wiring layer, an electroplated fuse element connected to the electrodes, and an interface wall. The fuse element is positioned external to the insulator, with a gap juxtaposed between the insulator and the fuse element. The interface wall further comprises a first side wall, a second side wall, and an inner wall, wherein the inner wall is disposed within the gap. The fuse electrodes are diametrically opposed to one another, and the fuse element is perpendicularly disposed above the fuse electrodes. The fuse element is either electroplatted, electroless plated, or is an ultra thin fuse.

摘要翻译： 用于熔丝结构的方法和结构包括绝缘体层，穿过绝缘体层延伸到下面的布线层的多个熔丝电极，连接到电极的电镀熔丝元件和界面壁。 保险丝元件位于绝缘体的外部，并且在绝缘体和保险丝元件之间并置有间隙。 界面壁还包括第一侧壁，第二侧壁和内壁，其中内壁设置在间隙内。 熔丝电极彼此直径相对，并且熔丝元件垂直地设置在熔丝电极的上方。 保险丝元件是电镀，无电镀，或是超薄保险丝。