公开(公告)号：US10566271B2

公开(公告)日：2020-02-18

申请号：US15467198

申请日：2017-03-23

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Yueh-Ying Tsai ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC: H01L23/495 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48 ,  H01L21/683 ,  H01L21/56

Abstract: A method for fabricating a carrier-free semiconductor package includes: half-etching a metal carrier to form a plurality of recess grooves and a plurality of metal studs each serving in position as a solder pad or a die pad; filing each of the recess grooves with a first encapsulant; forming on the metal studs an antioxidant layer such as a silver plating layer or an organic solderable protection layer; and performing die-bonding, wire-bonding and molding processes respectively to form a second encapsulant encapsulating the chip. The recess grooves are filled with the first encapsulant to enhance the adhesion between the first encapsulant and the metal carrier, thereby solving the conventional problem of having a weak and pliable copper plate and avoiding transportation difficulty. The invention eliminates the use of costly metals as an etching resist layer to reduce fabrication cost, and further allows conductive traces to be flexibly disposed on the metal carrier to enhance electrical connection quality.

公开(公告)号：US20150155240A1

公开(公告)日：2015-06-04

申请号：US14622255

申请日：2015-02-13

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Chin-Tsai Yao ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC: H01L23/552 ,  H01L21/56 ,  H01L23/00 ,  H01L21/78

CPC classification number: H01L23/552 ,  H01L21/561 ,  H01L21/78 ,  H01L24/48 ,  H01L24/49 ,  H01L24/81 ,  H01L24/85 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: An EMI shielding package structure includes a substrate unit having a first surface with a die mounting area and a second surfaces opposite to the first surface, metallic pillars formed on the first surface, a chip mounted on and electrically connected to the die-mounting area, an encapsulant covering the chip and the first surface while exposing a portion of each of the metallic pillars from the encapsulant, and a shielding film enclosing the encapsulant and electrically connecting to the metallic pillars. A fabrication method of the above structure by two cutting processes is further provided. The first cutting process forms grooves by cutting the encapsulant. After a shielding film is formed in the grooves and electrically connected to the metallic pillars, the complete package structure is formed by the second cutting process, thereby simplifying the fabrication process while overcoming inferior grounding of the shielding film as encountered in prior techniques.

Abstract translation: EMI屏蔽封装结构包括具有第一表面和芯片安装区域的基板单元和与第一表面相对的第二表面，形成在第一表面上的金属柱，安装在芯片安装区域上并与之电连接的芯片， 在将所述金属柱的一部分从所述密封剂暴露出来的同时覆盖所述芯片和所述第一表面的密封剂以及封装所述密封剂并电连接到所述金属柱的屏蔽膜。 进一步提供通过两个切割工艺的上述结构的制造方法。 第一切割工艺通过切割密封剂形成凹槽。 在凹槽中形成屏蔽膜并与金属柱电连接之后，通过第二切割工艺形成完整的封装结构，从而在克服现有技术中遇到的屏蔽膜的不良接地的同时简化制造工艺。

公开(公告)号：US09425152B2

公开(公告)日：2016-08-23

申请号：US14622255

申请日：2015-02-13

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Chin-Tsai Yao ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC: H01L23/552 ,  H01L23/00 ,  H01L21/56 ,  H01L21/78

CPC classification number: H01L23/552 ,  H01L21/561 ,  H01L21/78 ,  H01L24/48 ,  H01L24/49 ,  H01L24/81 ,  H01L24/85 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: An EMI shielding package structure includes a substrate unit having a first surface with a die mounting area and a second surfaces opposite to the first surface, metallic pillars formed on the first surface, a chip mounted on and electrically connected to the die-mounting area, an encapsulant covering the chip and the first surface while exposing a portion of each of the metallic pillars from the encapsulant, and a shielding film enclosing the encapsulant and electrically connecting to the metallic pillars. A fabrication method of the above structure by two cutting processes is further provided. The first cutting process forms grooves by cutting the encapsulant. After a shielding film is formed in the grooves and electrically connected to the metallic pillars, the complete package structure is formed by the second cutting process, thereby simplifying the fabrication process while overcoming inferior grounding of the shielding film as encountered in prior techniques.

Abstract translation: EMI屏蔽封装结构包括具有第一表面和芯片安装区域的基板单元和与第一表面相对的第二表面，形成在第一表面上的金属柱，安装在芯片安装区域上并与之电连接的芯片， 在将所述金属柱的一部分从所述密封剂暴露出来的同时覆盖所述芯片和所述第一表面的密封剂以及封装所述密封剂并电连接到所述金属柱的屏蔽膜。 进一步提供通过两个切割工艺的上述结构的制造方法。 第一切割工艺通过切割密封剂形成凹槽。 在凹槽中形成屏蔽膜并与金属柱电连接之后，通过第二切割工艺形成完整的封装结构，从而在克服现有技术中遇到的屏蔽膜的不良接地的同时简化制造工艺。

公开(公告)号：US20170200671A1

公开(公告)日：2017-07-13

申请号：US15467198

申请日：2017-03-23

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Yueh-Ying Tsai ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC: H01L23/495 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48 ,  H01L21/683

Abstract: A method for fabricating a carrier-free semiconductor package includes: half-etching a metal carrier to form a plurality of recess grooves and a plurality of metal studs each serving in position as a solder pad or a die pad; filing each of the recess grooves with a first encapsulant; forming on the metal studs an antioxidant layer such as a silver plating layer or an organic solderable protection layer; and performing die-bonding, wire-bonding and molding processes respectively to form a second encapsulant encapsulating the chip. The recess grooves are filled with the first encapsulant to enhance the adhesion between the first encapsulant and the metal carrier, thereby solving the conventional problem of having a weak and pliable copper plate and avoiding transportation difficulty. The invention eliminates the use of costly metals as an etching resist layer to reduce fabrication cost, and further allows conductive traces to be flexibly disposed on the metal carrier to enhance electrical connection quality.

公开(公告)号：US09177837B2

公开(公告)日：2015-11-03

申请号：US14221667

申请日：2014-03-21

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Pang-Chun Lin ,  Chun-Yuan Li ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78

CPC classification number: H01L21/568 ,  H01L21/78 ,  H01L23/3128 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/16 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/48644 ,  H01L2224/48655 ,  H01L2224/48664 ,  H01L2224/85001 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/85464 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/15151 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: A semiconductor package having electrical connecting structures includes: a conductive layer having a die pad and traces surrounding the die pad; a chip; bonding wires; an encapsulant with a plurality of cavities having a depth greater than the thickness of the die pad and traces for embedding the die pad and the traces therein, and the cavities exposing the die pad and the traces; a solder mask layer formed in the cavities and having a plurality of openings for exposing the trace ends and a portion of the die pad; and solder balls formed in the openings and electrically connected to the trace ends. Engaging the solder mask layer with the encapsulant enhances adhesion strength of the solder mask layer so as to prolong the moisture permeation path and enhance package reliability.

Abstract translation: 具有电连接结构的半导体封装包括：具有管芯焊盘和围绕管芯焊盘的迹线的导电层; 一个芯片 接合线; 具有多个空腔的密封剂，其深度大于管芯焊盘的厚度，以及用于将管芯焊盘和其中的迹线嵌入其中的迹线，以及暴露管芯焊盘和迹线的空腔; 形成在所述空腔中的焊料掩模层，并且具有用于暴露所述迹线端部和所述管芯焊盘的一部分的多个开口; 以及形成在开口中并电连接到迹线端的焊球。 将焊料掩模层与密封剂接合，增强了焊料掩模层的粘合强度，从而延长了水分渗透路径并提高了封装的可靠性。

公开(公告)号：US20140227830A1

公开(公告)日：2014-08-14

申请号：US14253324

申请日：2014-04-15

Applicant: SILICONWARE PRECISION INDUSTRIES CO., LTD.

Inventor： Chin-Tsai Yao ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC: H01L23/00

CPC classification number: H01L24/96 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/49548 ,  H01L23/552 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2224/85 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: A quad flat non-leaded (QFN) package structure with an electromagnetic interference (EMI) shielding function is proposed, including: a lead frame having a die pad, a plurality of supporting portions connecting to the die pad and a plurality of leads disposed around the periphery of the die pad without connecting to the die pad; a chip mounted on the die pad; bonding wires electrically connecting the chip and the leads; an encapsulant for encapsulating the chip, the bonding wires and the lead frame and exposing the side and bottom surfaces of the leads and the bottom surface of the die pad; and a shielding film disposed on the top and side surfaces of the encapsulant and electrically connecting to the supporting portions for shielding from EMI. A method of fabricating the package structure as described above is further proposed.

Abstract translation: 提出了一种具有电磁干扰（EMI）屏蔽功能的四边形扁平非引线（QFN）封装结构，包括：具有管芯焊盘的引线框架，连接到管芯焊盘的多个支撑部分和围绕 裸片焊盘的周边不连接到管芯焊盘; 安装在芯片焊盘上的芯片; 电连接芯片和引线的接合线; 用于封装芯片，接合线和引线框架并暴露引线的侧表面和底表面以及管芯焊盘的底表面的密封剂; 以及屏蔽膜，其设置在密封剂的顶表面和侧表面上，并且电连接到用于屏蔽EMI的支撑部分。 进一步提出如上所述的制造封装结构的方法。

公开(公告)号：US08802507B2

公开(公告)日：2014-08-12

申请号：US13667704

申请日：2012-11-02

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Cheng-Chia Chiang ,  Chin-Huang Chang ,  Chien-Ping Huang ,  Chih-Ming Huang ,  Jung-Pin Huang

IPC: H01L21/78 ,  H01L21/784 ,  H01L21/56 ,  H01L23/433 ,  H01L23/31 ,  H01L21/48 ,  H01L23/498

CPC classification number: H01L23/4334 ,  H01L21/486 ,  H01L23/31 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/49827 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/16235 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2224/81

Abstract: A semiconductor package device, a semiconductor package structure, and fabrication methods thereof are provided, which mainly includes disposing a plurality of semiconductor chips on a wafer formed with TSVs (Through Silicon Vias) and electrically connecting the semiconductor chips to the TSVs; encapsulating the semiconductor chips with an encapsulant; and disposing a hard component on the encapsulant. The hard component ensures flatness of the wafer during a solder bump process and provides support to the wafer during a singulation process such that the wafer can firmly lie on a singulation carrier, thereby overcoming the drawbacks of the prior art, namely difficulty in mounting of solder bumps, and difficulty in cutting of the wafer.

Abstract translation: 提供了一种半导体封装器件，半导体封装结构及其制造方法，其主要包括在形成有TSV（透硅通孔）的晶片上设置多个半导体芯片，并将半导体芯片与TSV电连接; 用密封剂封装半导体芯片; 并将硬组分设置在密封剂上。 硬组件确保了在焊料凸块工艺期间晶片的平整度，并且在单独化处理期间提供对晶片的支撑，使得晶片可以牢固地位于单个载体上，从而克服现有技术的缺点，即难以安装焊料 碰撞，切割晶片难度大。

公开(公告)号：US09190387B2

公开(公告)日：2015-11-17

申请号：US14253324

申请日：2014-04-15

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Chin-Tsai Yao ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC: H01L23/28 ,  H01L23/00 ,  H01L21/56 ,  H01L23/495 ,  H01L23/552 ,  H01L23/31

CPC classification number: H01L24/96 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/49548 ,  H01L23/552 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2224/85 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: A quad flat non-leaded (QFN) package structure with an electromagnetic interference (EMI) shielding function is proposed, including: a lead frame having a die pad, a plurality of supporting portions connecting to the die pad and a plurality of leads disposed around the periphery of the die pad without connecting to the die pad; a chip mounted on the die pad; bonding wires electrically connecting the chip and the leads; an encapsulant for encapsulating the chip, the bonding wires and the lead frame and exposing the side and bottom surfaces of the leads and the bottom surface of the die pad; and a shielding film disposed on the top and side surfaces of the encapsulant and electrically connecting to the supporting portions for shielding from EMI. A method of fabricating the package structure as described above is further proposed.

Abstract translation: 提出了一种具有电磁干扰（EMI）屏蔽功能的四边形扁平非引线（QFN）封装结构，包括：具有管芯焊盘的引线框架，连接到管芯焊盘的多个支撑部分和围绕 裸片焊盘的周边不连接到管芯焊盘; 安装在芯片焊盘上的芯片; 电连接芯片和引线的接合线; 用于封装芯片，接合线和引线框架并暴露引线的侧表面和底表面以及管芯焊盘的底表面的密封剂; 以及屏蔽膜，其设置在密封剂的顶表面和侧表面上，并且电连接到用于屏蔽EMI的支撑部分。 进一步提出如上所述的制造封装结构的方法。

公开(公告)号：US09190296B2

公开(公告)日：2015-11-17

申请号：US14319321

申请日：2014-06-30

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Yueh-Ying Tsai ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

CPC classification number: H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/3142 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/73265 ,  H01L2224/81395 ,  H01L2224/81439 ,  H01L2224/83395 ,  H01L2224/83439 ,  H01L2224/85001 ,  H01L2224/85395 ,  H01L2224/85439 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor package without a chip carrier formed thereon and a fabrication method thereof. A metallic carrier is half-etched to form a plurality of grooves and metal studs corresponding to the grooves. The grooves are filled with a first encapsulant and a plurality of bonding pads are formed on the metal studs. The first encapsulant is bonded with the metal studs directly. Each of the bonding pads and one of the metal studs corresponding to the bonding pad form a T-shaped structure. Therefore, bonding force between the metal studs and the first encapsulant is enhanced such that delamination is avoided. Die mounting, wire-bonding and molding processes are performed subsequently. Since the half-etched grooves are filled with the first encapsulant, the drawback of having pliable metallic carrier that makes transportation difficult to carry out as encountered in prior techniques is overcome, and the manufacturing cost is educed by not requiring the use of costly metals as an etching resist layer.

Abstract translation: 其上形成有芯片载体的半导体封装及其制造方法。 金属载体被半蚀刻以形成对应于凹槽的多个凹槽和金属螺柱。 凹槽填充有第一密封剂，并且在金属螺柱上形成多个接合焊盘。 第一密封剂直接与金属螺栓结合。 每个接合焊盘和对应于接合焊盘的一个金属螺柱形成T形结构。 因此，金属螺柱和第一密封剂之间的结合力增强，从而避免分层。 随后进行模具安装，引线接合和成型工艺。 由于半蚀刻槽被第一密封剂填充，因此克服了使现有技术中遇到的导致难以进行运输的柔韧金属载体的缺陷，并且通过不需要使用昂贵的金属来促进制造成本 抗蚀剂层。

公开(公告)号：US20140315351A1

公开(公告)日：2014-10-23

申请号：US14319321

申请日：2014-06-30

Applicant: Siliconware Precision Industries Co., Ltd.

Inventor： Yueh-Ying Tsai ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC: H01L21/48 ,  H01L23/00

CPC classification number: H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/3142 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/73265 ,  H01L2224/81395 ,  H01L2224/81439 ,  H01L2224/83395 ,  H01L2224/83439 ,  H01L2224/85001 ,  H01L2224/85395 ,  H01L2224/85439 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor package without a chip carrier formed thereon and a fabrication method thereof. A metallic carrier is half-etched to form a plurality of grooves and metal studs corresponding to the grooves. The grooves are filled with a first encapsulant and a plurality of bonding pads are formed on the metal studs. The first encapsulant is bonded with the metal studs directly. Each of the bonding pads and one of the metal studs corresponding to the bonding pad form a T-shaped structure. Therefore, bonding force between the metal studs and the first encapsulant is enhanced such that delamination is avoided. Die mounting, wire-bonding and molding processes are performed subsequently. Since the half-etched grooves are filled with the first encapsulant, the drawback of having pliable metallic carrier that makes transportation difficult to carry out as encountered in prior techniques is overcome, and the manufacturing cost is educed by not requiring the use of costly metals as an etching resist layer.

Abstract translation: 其上形成有芯片载体的半导体封装及其制造方法。 金属载体被半蚀刻以形成对应于凹槽的多个凹槽和金属螺柱。 凹槽填充有第一密封剂，并且在金属螺柱上形成多个接合焊盘。 第一密封剂直接与金属螺栓结合。 每个接合焊盘和对应于接合焊盘的一个金属螺柱形成T形结构。 因此，金属螺柱和第一密封剂之间的结合力增强，从而避免分层。 随后进行模具安装，引线接合和成型工艺。 由于半蚀刻槽被第一密封剂填充，因此克服了使现有技术中遇到的导致难以进行运输的柔韧金属载体的缺陷，并且通过不需要使用昂贵的金属来促进制造成本 抗蚀剂层。