公开(公告)号：US09960302B1

公开(公告)日：2018-05-01

申请号：US15297039

申请日：2016-10-18

申请人： SolarCity Corporation

发明人： Jiunn Benjamin Heng ,  Peter J. Rive ,  Zhigang Xie ,  Bobby Yang

IPC分类号： H02S20/25 ,  H01L31/05 ,  H01L31/0224 ,  H01L31/043

CPC分类号： H01L31/0516 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/043 ,  H01L31/0508 ,  H01L31/074 ,  H01L31/0747

摘要： A solar module is provided. The solar module includes a number of photovoltaic structures. Each photovoltaic structure has an interdigitated back contact, and the photovoltaic structures are cascaded, wherein any two adjacent structures are electrically coupled by overlapping their edges.

公开(公告)号：US20180108796A1

公开(公告)日：2018-04-19

申请号：US15297039

申请日：2016-10-18

申请人： SolarCity Corporation

发明人： Jiunn Benjamin Heng ,  Peter J. Rive ,  Zhigang Xie ,  Bobby Yang

IPC分类号： H01L31/05 ,  H01L31/0224 ,  H01L31/043

CPC分类号： H01L31/0516 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/043 ,  H01L31/0508 ,  H01L31/074 ,  H01L31/0747

摘要： A solar module is provided. The solar module includes a number of photovoltaic structures. Each photovoltaic structure has an interdigitated back contact, and the photovoltaic structures are cascaded, wherein any two adjacent structures are electrically coupled by overlapping their edges.

公开(公告)号：US20180062008A1

公开(公告)日：2018-03-01

申请号：US15244885

申请日：2016-08-23

申请人： SolarCity Corporation

发明人： Zhigang Xie ,  Yangsen Kang ,  Phillip M. Wu ,  Jianhua Hu

IPC分类号： H01L31/0224 ,  H01L31/0376 ,  H01L31/18 ,  C23C14/22 ,  C23C14/08 ,  C23C14/16 ,  C23C14/58

CPC分类号： H01L31/022466 ,  C23C14/0036 ,  C23C14/086 ,  C23C14/16 ,  C23C14/5806 ,  H01L31/0747 ,  H01L31/1884

摘要： A system for fabrication of a photovoltaic structure is provided. During fabrication, the system can deposit a doped amorphous Si layer on a first surface of a crystalline Si substrate; and deposit, using a physical vapor deposition machine, a transparent conductive oxide layer on the doped amorphous Si layer. The deposited transparent conductive oxide layer can include In2O3 doped with TiO2 and Ta2O5, and depositing the transparent conductive oxide layer can involve maintaining the Si substrate at a temperature below 130° C. The system can further deposit a metallic layer on the transparent conductive oxide layer, and anneal the transparent conductive oxide layer.

公开(公告)号：US09842956B2

公开(公告)日：2017-12-12

申请号：US14976900

申请日：2015-12-21

申请人： SolarCity Corporation

发明人： Zhigang Xie ,  Anand J. Reddy ,  Chunguang Xiao ,  Jiunn Benjamin Heng

IPC分类号： H01L31/07 ,  H01L31/0725 ,  H01L31/18

CPC分类号： H01L31/0725 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1868 ,  H01L31/1884 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548

摘要： One embodiment of the invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can form a sacrificial layer on a first side of a Si substrate; load the Si substrate into a chemical vapor deposition tool, with the sacrificial layer in contact with a wafer carrier; and form a first doped Si layer on a second side of the Si substrate. The system subsequently can remove the sacrificial layer; load the Si substrate into a chemical vapor deposition tool, with the first doped Si layer facing a wafer carrier; and form a second doped Si layer on the first side of the Si substrate.

公开(公告)号：US20170179326A1

公开(公告)日：2017-06-22

申请号：US14976900

申请日：2015-12-21

申请人： SolarCity Corporation

发明人： Zhigang Xie ,  Anand J. Reddy ,  Chunguang Xiao ,  Jiunn Benjamin Heng

IPC分类号： H01L31/0725 ,  H01L31/18

CPC分类号： H01L31/0725 ,  H01L31/03682 ,  H01L31/03762 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1868 ,  H01L31/1884 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548

摘要： One embodiment of the invention can provide a system for fabricating a photovoltaic structure. During fabrication, the system can form a sacrificial layer on a first side of a Si substrate; load the Si substrate into a chemical vapor deposition tool, with the sacrificial layer in contact with a wafer carrier; and form a first doped Si layer on a second side of the Si substrate. The system subsequently can remove the sacrificial layer; load the Si substrate into a chemical vapor deposition tool, with the first doped Si layer facing a wafer carrier; and form a second doped Si layer on the first side of the Si substrate.

公开(公告)号：US20170345954A1

公开(公告)日：2017-11-30

申请号：US15294042

申请日：2016-10-14

申请人： SolarCity Corporation

发明人： Yangsen Kang ,  Zhigang Xie ,  Jianhua Hu ,  Zheng Xu

IPC分类号： H01L31/0236 ,  H01L31/056 ,  H01L31/049 ,  H01L31/18 ,  H01L31/0216

CPC分类号： H01L31/02366 ,  H01L31/02 ,  H01L31/02162 ,  H01L31/02168 ,  H01L31/048 ,  H01L31/049 ,  H01L31/056 ,  H01L31/18 ,  Y02E10/52

摘要： A low-reflection-loss low-angle-sensitive colored photovoltaic (PV) module is described. This colored PV module includes a transparent substrate; an array of solar cells encapsulated between a top encapsulation sheet and a bottom encapsulation sheet; and a color filter structure embedded between the top encapsulation sheet and the transparent substrate and configured to cause wavelength-selective reflections of incident light received by the colored PV module. Moreover, the transparent substrate includes a flat front surface configured to receive the incident light and a texture back surface configured with an array of features. The color filter structure is formed on the textured back surface of the transparent substrate to create a textured interface between the textured back surface and the color filter structure.

公开(公告)号：US20160189940A1

公开(公告)日：2016-06-30

申请号：US15061936

申请日：2016-03-04

申请人： SolarCity Corporation

发明人： Zhigang Xie ,  Wei Wang ,  Zheng Xu ,  Jianming Fu

IPC分类号： H01J37/34 ,  H01L31/0216 ,  H01J37/32 ,  C23C14/35 ,  H01L31/18

CPC分类号： H01J37/3414 ,  C23C14/3407 ,  C23C14/351 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32137 ,  H01J37/3405 ,  H01J37/3417 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3438 ,  H01J37/3444 ,  H01J37/345 ,  H01J37/3452 ,  H01J37/347 ,  H01L31/02168 ,  H01L31/1876 ,  H01L31/1884 ,  Y02E10/50

摘要： One embodiment of the present invention provides a sputtering system for large-scale fabrication of solar cells. The sputtering system includes a reaction chamber, a rotary target situated inside the reaction chamber which is capable of rotating about a longitudinal axis, and an RF power source coupled to at least one end of the rotary target to enable RF sputtering. The length of the rotary target is between 0.5 and 5 meters.

摘要翻译： 本发明的一个实施例提供了一种用于大规模制造太阳能电池的溅射系统。 溅射系统包括反应室，位于反应室内部的能够围绕纵向轴线旋转的旋转靶，以及耦合到旋转靶的至少一端以实现RF溅射的RF电源。 旋转靶的长度在0.5到5米之间。

公开(公告)号：US20160020342A1

公开(公告)日：2016-01-21

申请号：US14802663

申请日：2015-07-17

申请人： SolarCity Corporation

发明人： Jiunn Benjamin Heng ,  Zhigang Xie ,  Zheng Xu

IPC分类号： H01L31/0224

CPC分类号： H01L31/022441 ,  H01L31/022466 ,  H01L31/074 ,  H01L31/0747 ,  Y02E10/50

摘要： A solar cell with an interdigitated back contact is provided. The solar cell can include a crystalline silicon base layer and an electron collector region on a back side of the base layer. The electron collector region can include a first conductive oxide material electrically coupled to the base layer. The solar cell can also include a hole collector region on the back side of the base layer. The hole collector region can include a second conductive oxide material electrically coupled to the base layer. The electron collector region and hole collector region can form an interdigitated pattern. Furthermore, the first conductive oxide material and second conductive oxide material have different work functions.

摘要翻译： 提供了具有交错背接触的太阳能电池。 太阳能电池可以包括晶体硅基底层和在基底层的背面上的电子收集器区域。 电子收集器区域可以包括电耦合到基底层的第一导电氧化物材料。 太阳能电池还可以在基底层的背侧上包括孔集合区域。 空穴集电极区域可以包括电耦合到基底层的第二导电氧化物材料。 电子收集区域和空穴集电极区域可以形成交错图案。 此外，第一导电氧化物材料和第二导电氧化物材料具有不同的功函数。