公开(公告)号：US20060236934A1

公开(公告)日：2006-10-26

申请号：US11473661

申请日：2006-06-22

申请人： Soo Choi ,  John White ,  Qunhua Wang ,  Li Hou ,  Ki Kim ,  Shinichi Kurita ,  Tae Won ,  Suhail Anwar ,  Beom Park ,  Robin Tiner

发明人： Soo Choi ,  John White ,  Qunhua Wang ,  Li Hou ,  Ki Kim ,  Shinichi Kurita ,  Tae Won ,  Suhail Anwar ,  Beom Park ,  Robin Tiner

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

公开(公告)号：US20050251990A1

公开(公告)日：2005-11-17

申请号：US10889683

申请日：2004-07-12

申请人： Soo Young Choi ,  John White ,  Qunhua Wang ,  Li Hou ,  Ki Kim ,  Shinichi Kurita ,  Tae Won ,  Suhail Anwar ,  Beom Park ,  Robin Tiner

发明人： Soo Young Choi ,  John White ,  Qunhua Wang ,  Li Hou ,  Ki Kim ,  Shinichi Kurita ,  Tae Won ,  Suhail Anwar ,  Beom Park ,  Robin Tiner

IPC分类号： H01L21/02 ,  C23C16/00 ,  C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/505 ,  C23C16/509 ,  C23F1/00 ,  H01J37/32 ,  H01L21/205

CPC分类号： H01J37/3244 ,  C23C16/345 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/32596 ,  H01J2237/327 ,  H01J2237/3321 ,  H01J2237/3323 ,  H01J2237/3325 ,  Y10T29/49885 ,  Y10T29/49996

摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.

摘要翻译： 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

公开(公告)号：US20060228496A1

公开(公告)日：2006-10-12

申请号：US11173210

申请日：2005-07-01

申请人： Soo Choi ,  Beom Park ,  John White ,  Robin Tiner

发明人： Soo Choi ,  Beom Park ,  John White ,  Robin Tiner

IPC分类号： H05H1/24

CPC分类号： H01J37/32449 ,  H01J37/3244

摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages. The downstream side of the diffuser plate has a curvature to improve the thickness uniformity and film property uniformity of thin films deposited by PECVD, particularly SiN and amorphous silicon films. The curvature is preferably described by an arc of a circle or ellipse, the apex thereof located at the center point of the diffuser plate. In one aspect, the hollow cathode cavity volume density, surface area density, or the cavity density of the diffuser increases from the center of the diffuser to the outer edge. Methods for manufacturing such a diffuser plate are also provided.

摘要翻译： 提供了用于在处理室中分配气体的气体分配板的实施例。 在一个实施例中，用于等离子体处理室的气体分配组件包括具有在其上游侧和下游侧之间通过气体通道的扩散板，并且在气体通道的下游侧具有空心阴极腔。 扩散板的下游侧具有改善通过PECVD沉积的薄膜的厚度均匀性和膜特性均匀性的曲率，特别是SiN和非晶硅膜。 该曲率优选地由圆或椭圆的圆弧描述，其顶点位于扩散板的中心点。 在一个方面，空心阴极腔体积密度，表面积密度或扩散器的空腔密度从扩散器的中心增加到外边缘。 还提供了制造这种扩散板的方法。

公开(公告)号：US20060060138A1

公开(公告)日：2006-03-23

申请号：US11188922

申请日：2005-07-25

申请人： Ernst Keller ,  John M. White ,  Robin Tiner ,  Jiri Kucera ,  Soo Choi ,  Beom Park ,  Michael Starr

发明人： Ernst Keller ,  John M. White ,  Robin Tiner ,  Jiri Kucera ,  Soo Choi ,  Beom Park ,  Michael Starr

IPC分类号： C23C16/00

CPC分类号： H01J37/3244 ,  C23C16/45565

摘要： An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gasses through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.

摘要翻译： 公开了一种用于支撑气体分布板的大部分中心部分的装置和方法。 至少一个支撑构件能够通过配合连接件接合和分离扩散器，而不阻止气体或气体流过扩散器，并且被设计成向在其周边支撑的扩散器提供垂直悬架，或者能够支撑 扩散器没有周界支撑。 在一个方面，所述至少一个支撑构件是气体输送导管的一部分，并且在另一个实施例中是与气体输送导管分离的多个支撑构件。 至少一个支撑构件能够将垂直升降或垂直压缩平移到扩散器的中心区域。 还公开了一种用于控制从气体输送管道到气体分配板的气流的方法和装置。

公开(公告)号：US20060060302A1

公开(公告)日：2006-03-23

申请号：US10946403

申请日：2004-09-21

申请人： John White ,  Robin Tiner ,  Beom Park ,  Wendell Blonigan

发明人： John White ,  Robin Tiner ,  Beom Park ,  Wendell Blonigan

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32082 ,  H01J37/32174

摘要： An apparatus for providing a short return current path for RF current between a process chamber wall and a substrate support is provided. The RF grounding apparatus, which is RF grounded and is place above the substrate transfer port, establishes electrical contact with the substrate support only during substrate processing, such as deposition, to provide return current path for the RF current. One embodiment of the RF grounding apparatus comprises one or more low impedance flexible curtains, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Another embodiment of the RF grounding apparatus comprises a plurality of low impedance flexible straps, which are electrically connected to the grounded chamber wall, and to one or more low impedance blocks, which make contacts with the substrate support during substrate processing. Yet another embodiment of the RF grounding apparatus comprises a plurality of probes, which either are electrically connected to the grounded chamber wall or are grounded by other means, and actuators accompanying the probes. The actuators move the probes to make electrical contact with the substrate support during substrate processing.

公开(公告)号：US20060005771A1

公开(公告)日：2006-01-12

申请号：US11143506

申请日：2005-06-02

申请人： John White ,  Emanuel Beer ,  Wei Chang ,  Robin Tiner ,  Soo Choi

发明人： John White ,  Emanuel Beer ,  Wei Chang ,  Robin Tiner ,  Soo Choi

IPC分类号： C23C16/00 ,  C23F1/00

CPC分类号： C23C16/4583 ,  H01J37/3244 ,  H01J2237/3325

摘要： An apparatus and method for shaping profiles of a large-area PECVD electrode is provided. A plasma-enhanced CVD chamber for processing a large-area substrate is first provided. The chamber includes a lower electrode that supports a large area substrate. The lower electrode is shaped to selectively conform the supported substrate in a selected orientation under operating conditions. The orientation may be either planar or nonplanar. The substrate complies with the shape of the electrode so the substrate is substantially parallel to an upper electrode in the chamber, and/or to a gas diffusion plate in the chamber. The lower electrode comprises a substrate support fabricated from a material of insufficient strength to support itself at operating temperatures and pressure in the chamber. The shape of the substrate support is adjusted by modifying the dimensions and/or planarity of a supporting base structure, and/or by appropriately varying the thickness of the substrate support.

摘要翻译： 提供了一种用于形成大面积PECVD电极的轮廓的装置和方法。 首先提供用于处理大面积基板的等离子体增强CVD室。 该室包括支撑大面积基板的下电极。 下电极被成形为在操作条件下以选定的方向选择性地使受支撑的衬底符合。 取向可以是平面或非平面的。 基板符合电极的形状，因此基板基本上平行于腔室中的上部电极，和/或腔室中的气体扩散板。 下电极包括由强度不足的材料制成的衬底支撑件，以在腔室中的操作温度和压力下自身支撑。 通过改变支撑基底结构的尺寸和/或平面度和/或通过适当地改变基底支撑件的厚度来调节基底支撑件的形状。

公开(公告)号：US09068262B2

公开(公告)日：2015-06-30

申请号：US13110184

申请日：2011-05-18

申请人： Jozef Kudela ,  Jonghoon Baek ,  John M. White ,  Robin Tiner ,  Suhail Anwar ,  Gaku Furuta

发明人： Jozef Kudela ,  Jonghoon Baek ,  John M. White ,  Robin Tiner ,  Suhail Anwar ,  Gaku Furuta

IPC分类号： C23C16/455 ,  C23C16/509 ,  H01J37/32

CPC分类号： B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

摘要： Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

摘要翻译： 本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。 在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。 多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。 在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

公开(公告)号：US20060005770A1

公开(公告)日：2006-01-12

申请号：US10888947

申请日：2004-07-09

申请人： Robin Tiner ,  Shinichi Kurita

发明人： Robin Tiner ,  Shinichi Kurita

IPC分类号： C23C16/00 ,  B65G49/07

CPC分类号： C23C16/4586 ,  H01L21/68742

摘要： A method and apparatus for transferring a substrate to a substrate support is provided herein. In one embodiment, a method for transferring a substrate comprises the steps of simultaneously supporting a substrate above an upper surface of a substrate support on a first set and a second set of lift pins movably disposed through the substrate support. The first set of lift pins are extended to a first height and the second set of lift pins are extended to a second height lower than the first height. The second set of lift pins are disposed inward of the first set of lift pins. The relative distance between both the first set and the second set of lift pins and the upper surface is reduced to cause the substrate to contact the upper surface smoothly and substantially continuously from a point near the center of the substrate to the edges of the substrate.

摘要翻译： 本文提供了一种用于将衬底转移到衬底支撑件的方法和装置。 在一个实施例中，用于转移衬底的方法包括以下步骤：同时支撑位于第一组上的衬底支撑件的上表面上方的衬底和可移动地设置穿过衬底支撑件的第二组提升销。 第一组提升销延伸到第一高度，第二组提升销延伸到低于第一高度的第二高度。 第二组提升销设置在第一组提升销的内侧。 减小第一组和第二组提升销和上表面之间的相对距离，使得基板从靠近基板中心的点到基板的边缘平滑且基本上连续地接触上表面。

公开(公告)号：US20080035306A1

公开(公告)日：2008-02-14

申请号：US11776980

申请日：2007-07-12

申请人： JOHN WHITE ,  Robin Tiner

发明人： JOHN WHITE ,  Robin Tiner

IPC分类号： F25B29/00 ,  B05C13/00 ,  C23F1/00

CPC分类号： H01L21/67103 ,  C23C14/22 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/463 ,  H01J2237/2001 ,  H01L21/67109

摘要： A process chamber and a method for controlling the temperature of a substrate positioned on a substrate support assembly within the process chamber are provided. The substrate support assembly includes a thermally conductive body, a substrate support surface on the surface of the thermally conductive body and adapted to support a large area substrate thereon, one or more heating elements embedded within the thermally conductive body, and two or more cooling channels embedded within the thermally conductive body to be coplanar with the one or more heating elements. The cooling channels may be branched into two or more equal-length cooling passages being extended from a single point inlet and into a single point outlet to provide equal resistance cooling.

摘要翻译： 提供了处理室和用于控制位于处理室内的基板支撑组件上的基板的温度的方法。 衬底支撑组件包括导热体，导热体表面上的衬底支撑表面，并且适于支撑其上的大面积衬底，一个或多个嵌入导热体内的加热元件，以及两个或多个冷却通道 嵌入在导热体内以与一个或多个加热元件共面。 冷却通道可以分支成两个或更多个等长的冷却通道，其从单个点入口延伸到单个点出口以提供相等的电阻冷却。

公开(公告)号：US20050265818A1

公开(公告)日：2005-12-01

申请号：US11140777

申请日：2005-05-31

申请人： Wendell Blonigan ,  Carl Sorensen ,  John White ,  Robin Tiner

发明人： Wendell Blonigan ,  Carl Sorensen ,  John White ,  Robin Tiner

IPC分类号： H01L21/683 ,  B65G1/00 ,  B66C1/00 ,  B66C3/00 ,  H01L21/00 ,  H01L21/68 ,  H01L21/687

CPC分类号： H01L21/67259 ,  H01L21/68742 ,  H01L21/68778

摘要： Substrate support methods and apparatus include vertically aligned lift pins that have bearing surfaces that engage friction plates and/or magnetic fields to maintain the vertical orientation of the lift pins during substrate lifting. In some embodiments, a magnetic field and/or weighting may alternatively or additionally be used to control the vertical orientation of the lift pins, limit the angle of the lift pins, and/or prevent the lift pins from unintentionally binding in a susceptor as the susceptor is raised and prevent the resulting uneven support of the substrate.

摘要翻译： 衬底支撑方法和装置包括垂直对齐的提升销，其具有接合摩擦板和/或磁场的承载表面，以在衬垫提升期间保持提升销的垂直取向。 在一些实施例中，可以替代地或另外地使用磁场和/或加权来控制提升销的垂直定向，限制提升销的角度和/或防止提升销在基座中无意地结合，因为 感受器被升高并且防止由此产生的基板不均匀的支撑。