公开(公告)号：US07551658B2

公开(公告)日：2009-06-23

申请号：US11633739

申请日：2006-12-05

Applicant: Su Hwan Oh ,  Ki soo Kim ,  Oh Kee Kwon ,  Yong soon Baek

Inventor： Su Hwan Oh ,  Ki soo Kim ,  Oh Kee Kwon ,  Yong soon Baek

IPC: H01S5/00

CPC classification number: H01S5/2231 ,  B82Y20/00 ,  H01S5/1039 ,  H01S5/2222 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34306

Abstract: Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.

Abstract translation: 提供了具有改善的温度特性并且可以通过漏电流来减少光学损耗的埋脊式波导激光二极管。 掩埋脊波导激光二极管包括：以恒定宽度垂直延伸的脊区域，并且由包层的一部分上的选择性蚀刻层和由第一导电型材料形成的第一复合层构成; 以及p-n-p电流阻挡层，其厚度与脊区域外的包覆层上的脊区域的深度相同，并且包括由与第一导电类型材料相对的第二导电类型材料形成的第二化合物层。 此时，电流阻挡层包括在第二化合物层上延伸的第一化合物层。

公开(公告)号：US08937980B2

公开(公告)日：2015-01-20

申请号：US13614280

申请日：2012-09-13

Applicant: Oh Kee Kwon ,  Su Hwan Oh ,  Young Ahn Leem ,  O-Kyun Kwon ,  Young-Tak Han ,  Yongsoon Baek ,  Yun C. Chung

Inventor： Oh Kee Kwon ,  Su Hwan Oh ,  Young Ahn Leem ,  O-Kyun Kwon ,  Young-Tak Han ,  Yongsoon Baek ,  Yun C. Chung

IPC: H01S5/00

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/1039 ,  H01S5/1225 ,  H01S5/1243 ,  H01S5/2213 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/34306

Abstract: Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.

Abstract translation: 提供分布式反馈激光二极管。 分布式反馈激光二极管可以包括基板，在基板上具有光栅的下包层，设置在下包层上的有源层，设置在有源层上的第一上包层， 第一上包层上的第一方向，以及在相移区域上与第一方向交叉的第二方向延伸的脊波导层。

公开(公告)号：US07599624B2

公开(公告)日：2009-10-06

申请号：US11252401

申请日：2005-10-17

Applicant: Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

Inventor： Sahng Gi Park ,  Su Hwan Oh ,  Kwang Seong Choi ,  Moon Ho Park ,  Yong Soon Baek ,  Kwang Ryong Oh

IPC: H04J14/00

CPC classification number: H04J14/0282 ,  H04J14/0226 ,  H04J14/0246 ,  H04J14/0247 ,  H04J14/025 ,  H04J14/0252 ,  H04J2014/0253

Abstract: A channel switching function is added to a wavelength division multiplexing passive optical network (WDM-PON) system, which is an access optical network system, and the potential transmission rate is increased by combining wide wavelength tunable lasers and a time division multiplexing (TDM) data structure and properly using the necessary optical components. In addition, when the wavelength of a light source or an arrayed waveguide grating (AWG) changes, the wavelength is traced and the magnitude of a transmitted signal is maximized without an additional detour line using a loop-back network structure. Furthermore, fewer thermo-electric controllers (TECs) are required for stabilizing the temperature of an optical line terminal (OLT) using wavelength tunable lasers, each laser electrically changing its wavelength.

Abstract translation: 信道切换功能被添加到作为接入光网络系统的波分复用无源光网络（WDM-PON）系统，并且通过组合宽波长可调激光器和时分复用（TDM）来增加潜在传输速率， 数据结构，并正确使用必要的光学元件。 此外，当光源或阵列波导光栅（AWG）的波长改变时，跟踪波长，并且使用环回网络结构，没有额外的绕行线，传输信号的幅度最大化。 此外，需要较少的热电控制器（TEC）来稳定使用波长可调激光器的光线路终端（OLT）的温度，每个激光电子改变其波长。

公开(公告)号：US20060189016A1

公开(公告)日：2006-08-24

申请号：US11293615

申请日：2005-12-02

Applicant: Moon Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

Inventor： Moon Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

IPC: H01L21/00

CPC classification number: H01S5/026 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2063 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/50 ,  H01S2302/00

Abstract: Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

Abstract translation: 提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中 。 激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高 当通过每个电极单独注入电流时输出光的强度。

公开(公告)号：US08989229B2

公开(公告)日：2015-03-24

申请号：US13486698

申请日：2012-06-01

Applicant: Su Hwan Oh ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon ,  Oh Kee Kwon ,  Byung-seok Choi ,  Jongbae Kim

Inventor： Su Hwan Oh ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon ,  Oh Kee Kwon ,  Byung-seok Choi ,  Jongbae Kim

IPC: H01S5/22 ,  H01S5/026 ,  H01S5/14 ,  H01L33/20 ,  H01S5/022 ,  H01S5/062 ,  H01S5/10 ,  H01S5/223 ,  H01S5/343 ,  H01L33/00 ,  G02B6/30 ,  G02B6/42

CPC classification number: H01L33/005 ,  B82Y20/00 ,  G02B6/305 ,  G02B6/4206 ,  H01L33/0045 ,  H01L33/20 ,  H01L2933/0016 ,  H01L2933/0058 ,  H01S5/02216 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/06226 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/141 ,  H01S5/2213 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/34306 ,  H01S2301/176

Abstract: Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.

Abstract translation: 提供了一种高速超发光二极管，其制造方法，以及包括该发光二极管的波长可调谐外腔激光器。 超发光二极管包括具有有源区和光模尺寸转换区的衬底，在有源区中包括脊波导的波导和连接到有源波导的光模尺寸转换区中的深脊波导， 脊波导; 设置在脊波导的侧面上的平坦化层和基板上的深脊波导，以及与该电极电连接的焊盘，该焊盘设置在有源波导的外侧的平坦化层上。

公开(公告)号：US20130287054A1

公开(公告)日：2013-10-31

申请号：US13614280

申请日：2012-09-13

Applicant: Oh Kee KWON ,  Su Hwan Oh ,  Young Ahn Leem ,  O-Kyun Kwon ,  Young-Tak Han ,  Yongsoon Baek ,  Yun C. Chung

Inventor： Oh Kee KWON ,  Su Hwan Oh ,  Young Ahn Leem ,  O-Kyun Kwon ,  Young-Tak Han ,  Yongsoon Baek ,  Yun C. Chung

IPC: H01S5/30 ,  H01S5/34

CPC classification number: H01S5/22 ,  B82Y20/00 ,  H01S5/1039 ,  H01S5/1225 ,  H01S5/1243 ,  H01S5/2213 ,  H01S5/222 ,  H01S5/2231 ,  H01S5/3213 ,  H01S5/34306

Abstract: Distributed feedback-laser diodes are provided. The distributed feedback-laser diode may include a substrate, a lower cladding layer having a grating on the substrate, an active layer disposed on the lower cladding layer, a first upper cladding layer disposed on the active layer, a phase-shift region extending in a first direction on the first upper cladding layer, and a ridge waveguide layer extending in a second direction crossing the first direction on the phase-shift region.

Abstract translation: 提供分布式反馈激光二极管。 分布式反馈激光二极管可以包括基板，在基板上具有光栅的下包层，设置在下包层上的有源层，设置在有源层上的第一上包层， 第一上包层上的第一方向，以及在相移区域上与第一方向交叉的第二方向延伸的脊波导层。

公开(公告)号：US07378292B2

公开(公告)日：2008-05-27

申请号：US11293615

申请日：2005-12-02

Applicant: Moon Ho Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

Inventor： Moon Ho Park ,  Sahng Gi Park ,  Su Hwan Oh ,  Yong Soon Baek ,  Kwang Ryong Oh ,  Gyung Ock Kim ,  Sung Bock Kim

IPC: H01L21/00

CPC classification number: H01S5/026 ,  H01S5/0425 ,  H01S5/12 ,  H01S5/2063 ,  H01S5/2275 ,  H01S5/3201 ,  H01S5/50 ,  H01S2302/00

Abstract: Provided is a method of fabricating a semiconductor optical device for use in a subscriber or a wavelength division multiplexing (WDM) optical communication system, in which a laser diode (LD) and a semiconductor optical amplifier (SOA) are integrated in a single active layer. The laser diode (LD) and the semiconductor optical amplifier (SOA) are optically connected to each other, and electrically insulated from each other by ion injection, whereby light generated from the LD is amplified by the SOA to provide low oscillation start current and high intensity of output light when current is individually injected through each electrode.

Abstract translation: 提供一种制造用于用户或波分复用（WDM）光通信系统的半导体光学器件的方法，其中激光二极管（LD）和半导体光放大器（SOA）集成在单个有源层中 。 激光二极管（LD）和半导体光放大器（SOA）彼此光学连接，并通过离子注入彼此电绝缘，由LD产生的光被SOA放大，以提供低振荡起始电流和高 当通过每个电极单独注入电流时输出光的强度。

公开(公告)号：US20120307857A1

公开(公告)日：2012-12-06

申请号：US13486698

申请日：2012-06-01

Applicant: Su Hwan Oh ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon ,  Oh Kee Kwon ,  Byung-Seok Choi ,  Jongbae Kim

Inventor： Su Hwan Oh ,  Ki-Hong Yoon ,  Kisoo Kim ,  O-Kyun Kwon ,  Oh Kee Kwon ,  Byung-Seok Choi ,  Jongbae Kim

IPC: H01S5/22 ,  H01L33/58

CPC classification number: H01L33/005 ,  B82Y20/00 ,  G02B6/305 ,  G02B6/4206 ,  H01L33/0045 ,  H01L33/20 ,  H01L2933/0016 ,  H01L2933/0058 ,  H01S5/02216 ,  H01S5/02284 ,  H01S5/026 ,  H01S5/06226 ,  H01S5/101 ,  H01S5/1014 ,  H01S5/141 ,  H01S5/2213 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/34306 ,  H01S2301/176

Abstract: Provided are a high-speed superluminescent diode, a method of manufacturing the same, and a wavelength-tunable external cavity laser including the same. The superluminescent diode includes a substrate having an active region and an optical mode size conversion region, waveguides including an ridge waveguide in the active region and a deep ridge waveguide in the optical mode size conversion region connected to the active waveguide, an electrode disposed on the ridge waveguide; planarizing layers disposed on sides of the ridge waveguide and the deep ridge waveguide on the substrate, and a pad electrically connected to the electrode, the pad being disposed on the planarizing layers outside the active waveguide.

Abstract translation: 提供了一种高速超发光二极管，其制造方法，以及包括该发光二极管的波长可调谐外腔激光器。 超发光二极管包括具有有源区和光模尺寸转换区的衬底，在有源区中包括脊波导的波导和连接到有源波导的光模尺寸转换区中的深脊波导， 脊波导; 设置在脊波导的侧面上的平坦化层和基板上的深脊波导，以及与该电极电连接的焊盘，该焊盘设置在有源波导的外侧的平坦化层上。

公开(公告)号：US20070076773A1

公开(公告)日：2007-04-05

申请号：US11633739

申请日：2006-12-05

Applicant: Su Hwan Oh ,  Ki Kim ,  Oh Kee Kwon ,  Yong Baek

Inventor： Su Hwan Oh ,  Ki Kim ,  Oh Kee Kwon ,  Yong Baek

IPC: H01S5/00

CPC classification number: H01S5/2231 ,  B82Y20/00 ,  H01S5/1039 ,  H01S5/2222 ,  H01S5/3211 ,  H01S5/3213 ,  H01S5/34306

Abstract: Provided is a buried ridge waveguide laser diode that has improved temperature characteristics and can reduce optical loss by a leakage current. The buried ridge waveguide laser diode includes: a ridge region that extends vertically with a constant width and is composed of a selective etching layer and a first compound layer formed of a first conductive type material on a portion of the clad layer; and a p-n-p current blocking layer that has a thickness identical to the depth of the ridge region on the clad layer outside the ridge region and includes a second compound layer formed of a second conductive type material opposite to the first conductive type material. At this time, the current blocking layer includes the first compound layer extending on the second compound layer.

Abstract translation: 提供了具有改善的温度特性并且可以通过漏电流来减少光学损耗的埋脊式波导激光二极管。 掩埋脊波导激光二极管包括：以恒定宽度垂直延伸的脊区域，并且由包层的一部分上的选择性蚀刻层和由第一导电型材料形成的第一复合层构成; 以及p-n-p电流阻挡层，其厚度与脊区域外的包覆层上的脊区域的深度相同，并且包括由与第一导电类型材料相对的第二导电类型材料形成的第二化合物层。 此时，电流阻挡层包括在第二化合物层上延伸的第一化合物层。

公开(公告)号：US07130325B2

公开(公告)日：2006-10-31

申请号：US10749043

申请日：2003-12-29

Applicant: Su Hwan Oh ,  Moon Ho Park ,  Ji Myon Lee ,  Ki Soo Kim ,  Chul Wook Lee ,  Hyun Sung Ko ,  Sahng Gi Park ,  Young Chul Chung ,  Su Hyun Kim

Inventor： Su Hwan Oh ,  Moon Ho Park ,  Ji Myon Lee ,  Ki Soo Kim ,  Chul Wook Lee ,  Hyun Sung Ko ,  Sahng Gi Park ,  Young Chul Chung ,  Su Hyun Kim

IPC: H01S5/00 ,  H01S3/08

CPC classification number: H01S5/06256 ,  H01S5/028 ,  H01S5/06258 ,  H01S5/1209 ,  H01S5/125 ,  H01S5/2205 ,  H01S5/227

Abstract: The present invention relates to a semiconductor laser, having a construction capable of tuning a wavelength, in which a sampled grating distributed feedback SG-DFB structure portion and a sampled grating distributed Bragg reflector SG-DBR structure portion are integrated. In the present invention, the refraction index are varied in accordance with a current applied to the phase control area in the SG-DFB structure portion and the SG-DBR structure portion, whereby it is possible to continuously or discontinuously tune the wavelength. Therefore, in such a wavelength tunable semiconductor laser, its construction is relatively simple, and it is relatively useful to the manufacturing and mass-producing the semiconductor laser. In addition, such a wavelength tunable semiconductor laser has an excellent output optical efficiency while making it possible to tune the wavelength of the wide band.

Abstract translation: 本发明涉及具有能够调谐波长的结构的半导体激光器，其中采样光栅分布反馈SG-DFB结构部分和采样光栅分布布拉格反射器SG-DBR结构部分被集成。 在本发明中，折射率根据SG-DFB结构部分和SG-DBR结构部分中的相位控制区域的电流而变化，由此可以连续或不连续地调谐波长。 因此，在这种波长可调谐半导体激光器中，其结构相对简单，对制造和批量生产半导体激光器相对有用。 此外，这种波长可调谐半导体激光器具有优异的输出光学效率，同时可以调谐宽带的波长。