公开(公告)号：US5014521A

公开(公告)日：1991-05-14

申请号：US489153

申请日：1990-03-06

申请人： Tadashi Sakai ,  Katsunobu Minari ,  Hideji Ohta

发明人： Tadashi Sakai ,  Katsunobu Minari ,  Hideji Ohta

IPC分类号： F25C1/00 ,  F25B1/00 ,  F25B41/06 ,  F25B47/02 ,  F25C5/10

CPC分类号： F25C5/10 ,  F25B41/062 ,  F25B47/022 ,  F25C2700/04

摘要： A refrigeration system in an ice making machine has an evaporator coil connected at its inlet side to an outlet of a refrigeration compressor through a condensing coil and at its outlet side to an inlet of the compressor. An expansion valve is interposed between the condensing coil and the evaporator coil. A bypass line is connected in parallel with the condensing coil and the expansion valve. A solenoid valve is disposed within the bypass line to permit the flow of hot gas supplied therethrough from the compressor into the evaporator coil when it has been energized. The expansion valve is in the form of an expansion valve of the externally equalized type associated with an external equalizer pipe having an extremity connected to an intermediate portion of the evaporator coil between the inlet and outlet sides thereof. A thermostat bulb is located on a return line between the outlet side of the evaporator coil and the compressor. The thermostat bulb is filled with an amount of inert gas, which is determined to cause a maximum working pressure acting on the expansion valve, which is higher than the pressure of refrigerant at the intermediate portion of the evaporator coil during the freezing cycle and which is lower than the pressure of hot gas at the intermediate portion of the evaporator coil during the defrost cycle.

摘要翻译： 制冰机中的制冷系统具有蒸发器盘管，该蒸发器盘管的入口侧通过冷凝盘管连接到制冷压缩机的出口，其出口侧连接到压缩机的入口。 在冷凝盘管和蒸发器盘管之间插入一个膨胀阀。 旁路管路与冷凝线圈和膨胀阀并联连接。 电磁阀设置在旁路管路内，以允许从压缩机通过其供应的热气体在被通电时流入蒸发器盘管。 膨胀阀是外部均衡型的膨胀阀的形式，其与外部均衡管相连，外部均衡管的末端在其入口侧和出口侧之间连接到蒸发器盘管的中间部分。 恒温灯泡位于蒸发器盘管的出口侧与压缩机之间的回流管线上。 恒温器灯泡填充有一定量的惰性气体，其被确定为引起作用在膨胀阀上的最大工作压力，其高于在冷冻循环期间在蒸发器盘管的中间部分处的制冷剂的压力， 低于除霜循环期间蒸发器盘管的中间部分处的热气压。

公开(公告)号：US4903505A

公开(公告)日：1990-02-27

申请号：US304370

申请日：1989-01-30

申请人： Tadashi Sakai ,  Hideji Ohta

发明人： Tadashi Sakai ,  Hideji Ohta

IPC分类号： F25C1/12

CPC分类号： F25C1/12 ,  F25C2700/04

摘要： An automatic ice manufacturing apparatus comprises an ice making unit for manufacturing ice in an icing operation cycle, a water tank disposed below the ice making unit for storing water to undergo phase transformation into ice on the ice making unit, a first water spray tube disposed above the ice making unit for spraying the water onto the ice making unit, a water circulating conduit interconnecting the first water spray tube and the water tank, a circulating pump mounted in the circulating conduit for circulating the water between the water tank and the ice making unit, and an overflow pipe disposed within the water tank for controlling the highest water level within the water tank. A branch pipe branched from the circulating conduit on the discharge side of the circulating pump and having an open end portion positioned above and in the vicinity of the overflow pipe so that by lowering a discharge pressure of the circulating pump at the start of a deicing operation cycle, water remaining within the water tank at the end of the icing operation cycle is discharged from the open end of the branch pipe into the overflow pipe to be thereby drained from the apparatus. A valve for opening and closing the branch pipe can be provided. Impurity concentration of water for forming ice can be prevented from increasing. Improved ice making performance and high quality of manufactured ice can be ensured.

摘要翻译： 一种自动制冰装置，包括：制冰单元，用于在结冰操作循环中制造冰;水箱，设置在所述制冰单元的下方，用于储存在所述制冰单元上相转化为冰的水;第一水喷射管， 用于将水喷射到制冰单元上的制冰单元，将第一喷水管和水箱互连的水循环管道，安装在循环管道中的循环泵，用于使水箱和制冰单元之间的水循环 以及设置在水箱内的溢流管，用于控制水箱内的最高水位。 从循环泵的排出侧的循环管道分支出的分支管，具有位于溢流管上方和附近的开口端部，使得通过在除冰运转开始时降低循环泵的排出压力 在结冰操作循环结束时，水箱内残留的水从分支管的开口端排出到溢流管中，从而从设备排出。 可以提供用于打开和关闭分支管的阀。 防止形成冰的水的杂​​质浓度增加。 可以确保提高制冰性能和高品质的制冰。

公开(公告)号：US08710672B2

公开(公告)日：2014-04-29

申请号：US13541954

申请日：2012-07-05

申请人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

发明人： Masayuki Katagiri ,  Yuichi Yamazaki ,  Makoto Wada ,  Tadashi Sakai ,  Naoshi Sakuma ,  Mariko Suzuki

IPC分类号： H01L21/768

CPC分类号： H01L23/5226 ,  B82Y40/00 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device of an embodiment includes: a substrate; a first catalytic metal film on the substrate; graphene on the first catalytic metal film; an interlayer insulating film on the graphene; a contact hole penetrating through the interlayer insulating film; a conductive film at the bottom portion of the contact hole, the conductive film being electrically connected to the graphene; a second catalytic metal film on the conductive film, the second catalytic metal film being subjected to plasma processing with at least one kind of gas selected from hydrogen, nitrogen, ammonia, and rare gas; and carbon nanotubes on the second catalytic metal film.

摘要翻译： 实施例的半导体器件包括：衬底; 在基板上的第一催化金属膜; 第一催化金属膜上的石墨烯; 石墨烯上的层间绝缘膜; 穿过层间绝缘膜的接触孔; 所述导电膜在所述接触孔的底部，所述导电膜与所述石墨烯电连接; 在所述导电膜上的第二催化金属膜，所述第二催化金属膜用选自氢，氮，氨和稀有气体中的至少一种气体进行等离子体处理; 和第二催化金属膜上的碳纳米管。

公开(公告)号：US08487449B2

公开(公告)日：2013-07-16

申请号：US13215463

申请日：2011-08-23

申请人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

发明人： Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Masayuki Kitamura ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naohsi Sakuma

IPC分类号： H01L29/70 ,  H01L21/4763

CPC分类号： H01L23/53276 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76858 ,  H01L21/76865 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2221/1089 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a carbon nanotube interconnection includes a first conductive layer, an insulating film, a catalyst underlying film, a catalyst deactivation film, a catalyst film, and carbon nanotubes. An insulating film is formed on the first conductive layer and including a hole. An catalyst underlying film is formed on the first conductive layer on a bottom surface in the hole and on the insulating film on a side surface in the hole. A catalyst deactivation film is formed on the catalyst underlying film on the side surface in the hole. A catalyst film is formed on the catalyst underlying film on the bottom surface in the hole and the catalyst deactivation film on the side surface in the hole. Carbon nanotubes are formed in the hole, the carbon nanotubes including one end in contact with the catalyst film on the bottom surface in the hole.

摘要翻译： 根据一个实施例，碳纳米管互连包括第一导电层，绝缘膜，底层催化剂，催化剂失活膜，催化剂膜和碳纳米管。 绝缘膜形成在第一导电层上并包括孔。 在孔的底面上的第一导电层和孔的侧面的绝缘膜上形成催化剂底膜。 在孔中的侧表面上的催化剂底层上形成催化剂失活膜。 在孔的底面的催化剂底层和孔的侧面的催化剂失活膜上形成催化剂膜。 在孔中形成碳纳米管，碳纳米管包括与孔中底表面上的催化剂膜接触的一端。

公开(公告)号：US08452505B2

公开(公告)日：2013-05-28

申请号：US12660277

申请日：2010-02-24

申请人： Yuusuke Mizuno ,  Kazunao Yamada ,  Tadashi Sakai

发明人： Yuusuke Mizuno ,  Kazunao Yamada ,  Tadashi Sakai

IPC分类号： G06F7/70 ,  G06F19/00 ,  G06F7/00 ,  G06G7/76

CPC分类号： B60K35/00 ,  B60K2350/1092 ,  B60R16/0236 ,  B60W30/18127 ,  B60W2050/146 ,  Y02T10/84

摘要： A re-generation instruction apparatus has a re-generation instruction computer that receives brake operation information from a re-generation control computer for calculating an energy loss in a total energy from speed reduction by the brake operation of the driver, which is lost by a re-generation brake system. The calculated energy loss is utilized for preparing notification for the driver in various situations such as a pre-travel notification, a during-travel notification and/or an after-travel notification.

摘要翻译： 重新生成指令装置具有重新生成指令计算机，其从再生控制计算机接收制动操作信息，用于通过驾驶员的制动操作来计算来自减速的总能量中的能量损失，所述制动操作信息由 再生制动系统。 所计算的能量损失用于在诸如旅行前通知，旅行前通知和/或旅行后通知的各种情况下为驾驶员准备通知。

公开(公告)号：US08433466B2

公开(公告)日：2013-04-30

申请号：US12800884

申请日：2010-05-25

申请人： Kazunao Yamada ,  Yusuke Mizuno ,  Tadashi Sakai ,  Yasushi Sakuma

发明人： Kazunao Yamada ,  Yusuke Mizuno ,  Tadashi Sakai ,  Yasushi Sakuma

IPC分类号： B60L9/00 ,  B60L11/00 ,  G05D1/00

CPC分类号： B60W20/40 ,  B60K6/46 ,  B60W10/06 ,  B60W10/08 ,  B60W10/26 ,  B60W20/00 ,  B60W30/188 ,  B60W2510/244 ,  B60W2550/143 ,  B60W2550/402 ,  Y02T10/6217 ,  Y02T10/6291 ,  Y02T10/7258

摘要： In a drive control apparatus, an information storing unit collects first and second information at predetermined intervals while the vehicle runs and the information storing unit stores the first and second information in a storage device. A schedule effective section extracting unit extracts a schedule effective section from a route from an origin to a destination based on the second information. A control index storage controlling unit defines the schedule of the control index of each of multiple predetermined sections within the schedule effective section based on the first information such that fuel consumption of the engine is reduced in the schedule effective section, wherein the defined schedule of the control index is stored in the storage device. An assist control process unit performs drive control of a motor and an engine based on the schedule of the control index.

摘要翻译： 在驱动控制装置中，信息存储单元在车辆行驶时以预定间隔收集第一和第二信息，并且信息存储单元将第一和第二信息存储在存储装置中。 调度有效部分提取单元根据第二信息从原点到目的地的路由提取调度有效部分。 控制索引存储控制单元基于第一信息来定义调度有效部分内的多个预定部分中的每一个的控制索引的调度，使得在调度有效部分中减少发动机的燃料消耗，其中定义的调度表 控制索引存储在存储设备中。 辅助控制处理单元基于控制指标的调度来执行电动机和发动机的驱动控制。

公开(公告)号：US08428804B2

公开(公告)日：2013-04-23

申请号：US12923046

申请日：2010-08-31

申请人： Tadashi Sakai ,  Kazunao Yamada ,  Yusuke Mizuno

发明人： Tadashi Sakai ,  Kazunao Yamada ,  Yusuke Mizuno

IPC分类号： B60L9/00

CPC分类号： B60L1/00 ,  B60L7/16

摘要： A temperature increase of a battery of a vehicle in a schedule effect road range is estimated based on an estimate of energy acquirable by regeneration in the schedule effect road range of the vehicle. A special value of the battery upper limit temperature is designated which is obtained by subtracting the temperature increase from a default value of the battery upper limit temperature. A battery upper limit temperature reduction road range is designated which is located just prior to the schedule effect road range. While the vehicle runs the battery upper limit temperature reduction road range, the battery upper limit temperature is set at the special value by being switched from the default value. When the vehicle completes running the battery upper limit temperature reduction road range and starts running the schedule effect road range, the battery upper limit temperature is returned to the default value from the special value.

摘要翻译： 基于通过车辆的调度效果道路范围中的再生可获得的能量的估计来估计在时间表效应道路范围内的车辆的电池的温度升高。 指定通过从电池上限温度的默认值减去温度上升而获得的电池上限温度的特殊值。 指定位于时间表效果道路范围之前的电池上限温度降低道路范围。 当车辆运行电池上限温度降低道路范围时，通过从默认值切换将电池上限温度设置为特殊值。 当车辆完成电池上限温度降低道路行驶并开始行驶时间表效果道路距离时，电池上限温度从特殊值返回到默认值。

公开(公告)号：US08398927B2

公开(公告)日：2013-03-19

申请号：US12495004

申请日：2009-06-30

申请人： Yuichi Yamazaki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Mariko Suzuki

发明人： Yuichi Yamazaki ,  Tadashi Sakai ,  Naoshi Sakuma ,  Masayuki Katagiri ,  Mariko Suzuki

IPC分类号： B01J19/08

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  C01B32/16

摘要： A carbon nanotube manufacturing apparatus includes a plasma generating unit that generates plasma including ions, radicals, and electrons, from gas; a carbon nanotube manufacturing unit that manufactures carbon nanotubes from the radicals; a shielding electrode unit that is provided between the plasma generating unit and the carbon nanotube manufacturing unit and prevents the ions and the electrons from entering the carbon nanotube manufacturing unit; and a bias applying unit that applies a voltage to the shielding electrode unit, wherein the shielding electrode unit includes at least two first shielding electrodes that are arranged one above another, each of the first shielding electrodes having at least one opening.

摘要翻译： 碳纳米管制造装置包括：等离子体产生单元，其从气体产生包括离子，自由基和电子的等离子体; 由自由基制造碳纳米管的碳纳米管制造单元; 设置在等离子体产生单元和碳纳米管制造单元之间并防止离子和电子进入碳纳米管制造单元的屏蔽电极单元; 以及向所述屏蔽电极单元施加电压的偏压施加单元，其中所述屏蔽电极单元包括至少两个彼此排列的第一屏蔽电极，每个所述第一屏蔽电极具有至少一个开口。

公开(公告)号：US20120228614A1

公开(公告)日：2012-09-13

申请号：US13413854

申请日：2012-03-07

申请人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

发明人： Masayuki Kitamura ,  Makoto Wada ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Atsuko Sakata ,  Akihiro Kajita ,  Tadashi Sakai ,  Naoshi Sakuma ,  Ichiro Mizushima

IPC分类号： H01L29/04 ,  H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02527 ,  H01L21/02645 ,  H01L21/28556 ,  H01L21/32051 ,  H01L21/76846 ,  H01L21/76877 ,  H01L23/53276 ,  H01L2221/1078 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate.

摘要翻译： 根据一个实施例，公开了一种半导体器件。 该器件包括半导体衬底和半导体衬底上方的互连。 互连包括助催化剂层，助催化剂层上的催化剂层和催化剂层上的石墨烯层。 助催化剂层包括与催化剂层接触的部分。 该部分具有面平面立方结构，其中（111）面平行于半导体衬底的表面定向。 催化剂层具有面平面立方结构，其中（111）面平行于半导体衬底的表面取向。

公开(公告)号：US20110233779A1

公开(公告)日：2011-09-29

申请号：US13052367

申请日：2011-03-21

申请人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

发明人： Makoto Wada ,  Yosuke Akimoto ,  Yuichi Yamazaki ,  Masayuki Katagiri ,  Noriaki Matsunaga ,  Tadashi Sakai ,  Naoshi Sakuma

IPC分类号： H01L23/532 ,  H01L21/28 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L23/5226 ,  B82Y10/00 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76876 ,  H01L21/76879 ,  H01L23/53238 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor device includes an interlayer insulation film provided on a substrate including a Cu wiring, a via hole formed in the interlayer insulation film on the Cu wiring, a first metal film selectively formed on the Cu wiring in the via hole, functioning as a barrier to the Cu wiring, and functioning as a promoter of carbon nanotube growth, a second metal film formed at least on the first metal film in the via hole, and functioning as a catalyst of the carbon nanotube growth, and carbon nanotubes buried in the via hole in which the first metal film and the second metal film are formed.

摘要翻译： 根据一个实施例，半导体器件包括设置在包括Cu布线的基板上的层间绝缘膜，形成在Cu布线上的层间绝缘膜中的通孔，选择性地形成在通孔中的Cu布线上的第一金属膜 作为Cu布线的屏障，起到碳纳米管生长的促进剂的功能，至少在通孔中的第一金属膜上形成的第二金属膜，并且用作碳纳米管生长的催化剂，碳 埋藏在其中形成有第一金属膜和第二金属膜的通孔中的纳米管。