公开(公告)号：US06858308B2

公开(公告)日：2005-02-22

申请号：US10092617

申请日：2002-03-08

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Ryo Hayashi ,  Shuichiro Sugiyama

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Ryo Hayashi ,  Shuichiro Sugiyama

IPC分类号： B32B9/00 ,  H01L21/00 ,  H01L21/336 ,  H01L29/04 ,  H01L29/786 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L29/66765 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78678 ,  H01L29/78696 ,  H01L31/03685 ,  H01L31/075 ,  H01L31/182 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521 ,  Y10T428/261

摘要： The invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal. The microcrystal is located in at least one interface region of the silicon-based film containing the microcrystal and has no orientation property. Further, the invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal, and the orientation property of the microcrystal changing in a film thickness direction of the silicon-based film containing the microcrystal. Thereby, a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film having excellent adhesion and environmental resistance can be obtained.

摘要翻译： 本发明提供了一种半导体元件，其具有由硅基膜构成的半导体结，至少一个含有微晶的硅基膜。 微晶体位于含有微结晶的硅基膜的至少一个界面区域中，并且不具有取向性。 此外，本发明提供一种半导体元件，其具有由硅系膜构成的半导体结，含有微晶的硅系膜中的至少一种以及微晶在硅基膜的膜厚方向上的取向性 含有微晶的薄膜。 由此，可以获得具有缩短的生产时间缩短，成膜速度和优异特性的硅基膜，以及包含这种具有优异的粘附性和耐环境性的硅基膜的半导体元件。

公开(公告)号：US06794275B2

公开(公告)日：2004-09-21

申请号：US10113675

申请日：2002-04-02

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Yuzo Koda ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Koichiro Moriyama

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Yuzo Koda ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Koichiro Moriyama

IPC分类号： H01L21365

CPC分类号： H01L31/1804 ,  C23C16/46 ,  C23C16/463 ,  C23C16/505 ,  C23C16/52 ,  C23C16/545 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66765 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In a process for forming a silicon-based film on a substrate according to the present invention, the substrate has a temperature gradient in the thickness direction thereof in the formation of the silicon-based film and the temperature gradient is made such that a deposition surface of the substrate has a higher temperature than a backside or the direction of the temperature gradient is reversed. With this configuration, the present invention provides a silicon-based thin film having good properties at a high deposition rate and provides a semiconductor device including it. The present invention also provides a semiconductor device including the silicon-based thin films that has good adhesion and weather-resisting properties and that can be manufactured in a short tact time.

摘要翻译： 在根据本发明的基板上形成硅基膜的方法中，在形成硅基膜时，基板在其厚度方向上具有温度梯度，并使温度梯度使得沉积表面 的衬底具有比背面更高的温度或温度梯度的方向反转。 利用这种结构，本发明提供一种在高沉积速率下具有良好性能的硅基薄膜，并提供包括它的半导体器件。 本发明还提供一种半导体器件，其包括硅基薄膜，其具有良好的粘合性和耐候性，并且可以在短的时间内制造。

公开(公告)号：US06737123B2

公开(公告)日：2004-05-18

申请号：US10166759

申请日：2002-06-12

申请人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Tadashi Sawayama ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Hiroyuki Ozaki ,  Yoshinori Sugiura

发明人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Tadashi Sawayama ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Hiroyuki Ozaki ,  Yoshinori Sugiura

IPC分类号： C23C16505

CPC分类号： C23C16/517 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|≦|V1|≦50×|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.

摘要翻译： 形成在高频电力上叠加直流电位的硅基膜，将高频供电部的电位设定为比地电位低V1的电位; 满足| V2 | <= | V1 | <= 50x | V2 |的V1，其中V2是在等离子体在相同条件下发生的状态下在电极中产生的与地电位的电位差， 电流电势不叠加在高频电源上，并且电极进入非接地状态。 这可以提供具有高成膜速度的优异特性的硅基膜和使用该硅基膜的半导体器件，具有优异的附着力，耐环境性，并且可以在制造时享受短的时间 。

公开(公告)号：US20100165167A1

公开(公告)日：2010-07-01

申请号：US12637816

申请日：2009-12-15

申请人： Shuichiro Sugiyama ,  Yuichiro Yamashita

发明人： Shuichiro Sugiyama ,  Yuichiro Yamashita

IPC分类号： H04N5/335 ,  H04N5/232

CPC分类号： H04N5/335 ,  H04N5/3597 ,  H04N5/361 ,  H04N5/3741

摘要： A solid-state imaging apparatus has a plurality of pixels, wherein each of the pixels includes: a photoelectric conversion element for converting incident light to an electric charge; an accumulating element accumulating the electric charge converted by the photoelectric conversion element; a first transfer element for transferring the electric charge converted by the photoelectric conversion element to the accumulating element; a second transfer element for transferring the electric charge accumulated in the accumulating element to a floating diffusion region; and an amplifying element for amplifying the electric charge in the floating diffusion region, wherein the first transfer element transfers the electric charge converted by the photoelectric conversion element to the accumulating element a plurality of times and causes the accumulating element to cumulatively accumulate the electric charge transferred the plurality of times.

摘要翻译： 固态成像装置具有多个像素，其中每个像素包括：用于将入射光转换成电荷的光电转换元件; 累积由光电转换元件转换的电荷的累积元件; 用于将由光电转换元件转换的电荷转移到累积元件的第一转移元件; 第二转印元件，用于将累积在积聚元件中的电荷转移到浮动扩散区; 以及用于放大浮动扩散区域中的电荷的放大元件，其中第一传输元件将由光电转换元件转换的电荷多次转移到累积元件，并使累积元件累积地累积转移的电荷 多次。

公开(公告)号：US06963120B2

公开(公告)日：2005-11-08

申请号：US10704642

申请日：2003-11-12

申请人： Atsushi Shiozaki ,  Shuichiro Sugiyama

发明人： Atsushi Shiozaki ,  Shuichiro Sugiyama

IPC分类号： H01L21/205 ,  H01L29/04 ,  H01L31/0368 ,  H01L31/0376 ,  H01L31/04 ,  H01L31/048 ,  H01L31/072 ,  H01L31/075 ,  H01L31/078 ,  H01L31/20

CPC分类号： H01L31/03685 ,  B32B17/10788 ,  H01L31/076 ,  Y02B10/12 ,  Y02E10/545 ,  Y02E10/548

摘要： A photovoltaic element is provided which has a high conversion efficiency, a low-cost producibility, a light weight and good overall characteristics in a final product form with a transparent protective member. The photovoltaic element comprises a first pin junction comprising an i-type amorphous semiconductor, a second pin junction comprising an i-type microcrystalline semiconductor, and a third pin junction comprising an i-type microcrystalline semiconductor provided in the mentioned order from a light incidence side, wherein at least a transparent protective member and a transparent electrode layer are provided on the light incidence side of the first pin junction, and wherein of the photocurrents generated at the plurality of pin junctions, the photocurrent generated at the third pin junction is the smallest.

摘要翻译： 提供了具有高转换效率，低成本可生产性，重量轻和具有透明保护构件的最终产品形式的良好整体特性的光电元件。 光电元件包括​​第一pin结，其包括i型非晶半导体，包括i型微晶半导体的第二pin结，以及包括从光入射侧按照上述顺序提供的i型微晶半导体的第三pin结 其特征在于，在所述第一pin结的光入射侧设置有至少透明保护部件和透明电极层，并且在所述多个引脚接合处产生的所述光电流中，在所述第三pin结处产生的光电流为最小 。

公开(公告)号：US5700326A

公开(公告)日：1997-12-23

申请号：US395191

申请日：1995-02-27

申请人： Kazumasa Takatsu ,  Takashi Kurokawa ,  Hiroshi Echizen ,  Akio Koganei ,  Shuichiro Sugiyama ,  Toshio Adachi

发明人： Kazumasa Takatsu ,  Takashi Kurokawa ,  Hiroshi Echizen ,  Akio Koganei ,  Shuichiro Sugiyama ,  Toshio Adachi

IPC分类号： C23C16/511 ,  H01J37/32 ,  C23C16/00

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32275

摘要： A microwave plasma processing apparatus comprises a vacuum processing chamber, a substrate disposed within the vacuum processing chamber, a microwave guide coupled to the vacuum processing chamber, and fins for dividing a microwave in the electric field direction. The length of fins are different such that the uniformity of the film thickness distribution on the substrate of large area can be improved.

摘要翻译： 微波等离子体处理装置包括真空处理室，设置在真空处理室内的基板，耦合到真空处理室的微波导件和用于在电场方向上分隔微波的翅片。 散热片的长度不同，可以提高大面积的基板上的膜厚分布的均匀性。

公开(公告)号：US06800539B2

公开(公告)日：2004-10-05

申请号：US09900043

申请日：2001-07-09

申请人： Takahiro Yajima ,  Masahiro Kanai ,  Shuichiro Sugiyama

发明人： Takahiro Yajima ,  Masahiro Kanai ,  Shuichiro Sugiyama

IPC分类号： H01L2120

CPC分类号： C23C16/509 ,  C23C16/24 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： In a discharge space, a substrate 201 and a cathode 206 are disposed a distance d (cm) apart from each other, and gas containing one or more silicon compounds and hydrogen are introduced into the discharge space, and a product Pd of a film forming pressure P (Pa) and d, and a hydrogen flow rate M (SLM) are set so as to meet a relation: 80M+200≦Pd≦160M+333, and an RF power is applied to generate a plasma and a non-monocrystal silicon thin film is formed on the substrate 201 in the discharge space. Thereby, there is provided a thin film formation method making it possible to form an amorphous silicon film in which both a uniform film forming rate of a film distribution facilitating an implementation of a large area and a high conversion efficiency can be obtained while achieving an increase in the film forming rate.

摘要翻译： 在放电空间中，衬底201和阴极206彼此间隔d（cm）设置，含有一个或多个硅化合物和氢的气体被引入到放电空间中，并且成膜的产物Pd 压力P（Pa）和d，氢气流量M（SLM）设定为满足关系：80M + 200 <= Pd <= 160M + 333，并且施加RF功率以产生等离子体和 在放电空间中的基板201上形成非单晶硅薄膜。 因此，提供了一种薄膜形成方法，使得可以形成非晶硅膜，其中可以获得均匀的薄膜分布成膜速率，从而可以获得促进大面积实现和高转换效率，同时实现增加 在成膜率上。

公开(公告)号：US06531654B2

公开(公告)日：2003-03-11

申请号：US09861520

申请日：2001-05-22

申请人： Shuichiro Sugiyama ,  Masahiro Kanai ,  Takahiro Yajima

发明人： Shuichiro Sugiyama ,  Masahiro Kanai ,  Takahiro Yajima

IPC分类号： H01L3104

CPC分类号： H01L31/202 ,  C23C16/24 ,  C23C16/5096 ,  C30B25/105 ,  C30B29/06 ,  H01L31/20 ,  Y02E10/50 ,  Y02P70/521

摘要： In a semiconductor thin-film formation process comprising feeding a semiconductor thin-film material gas into a discharge space, and applying a high-frequency power thereto to cause plasma to take place and decompose the material gas to form an amorphous semiconductor thin film on a desired substrate, the high-frequency power is applied changing its power density continuously or stepwise from a high power density to a low power density and thereafter again changing the power density continuously or stepwise from a low power density to a high power density, to form a semiconductor thin film made different in film quality in the direction of layer thickness while retaining the same conductivity type. This process enable formation of high-quality semiconductor thin films by plasma CVD.

摘要翻译： 在半导体薄膜形成工艺中，包括将半导体薄膜材料气体进料到放电空间中，并向其施加高频电力以使等离子体发生并分解，从而在材料气体上形成非晶半导体薄膜 应用高频功率将其功率密度从高功率密度连续地或逐步地改变到低功率密度，然后再次将功率密度从低功率密度连续地或逐步地改变到高功率密度，以形成 在保持相同的导电类型的同时，在层厚度方向上制成膜质量不同的半导体薄膜。 该过程能够通过等离子体CVD形成高质量的半导体薄膜。

公开(公告)号：US08564706B2

公开(公告)日：2013-10-22

申请号：US12637816

申请日：2009-12-15

申请人： Shuichiro Sugiyama ,  Yuichiro Yamashita

发明人： Shuichiro Sugiyama ,  Yuichiro Yamashita

IPC分类号： H04N3/14

CPC分类号： H04N5/335 ,  H04N5/3597 ,  H04N5/361 ,  H04N5/3741

摘要： A solid-state imaging apparatus has a plurality of pixels, wherein each of the pixels includes: a photoelectric conversion element for converting incident light to an electric charge; an accumulating element accumulating the electric charge converted by the photoelectric conversion element; a first transfer element for transferring the electric charge converted by the photoelectric conversion element to the accumulating element; a second transfer element for transferring the electric charge accumulated in the accumulating element to a floating diffusion region; and an amplifying element for amplifying the electric charge in the floating diffusion region, wherein the first transfer element transfers the electric charge converted by the photoelectric conversion element to the accumulating element a plurality of times and causes the accumulating element to cumulatively accumulate the electric charge transferred the plurality of times.

摘要翻译： 固态成像装置具有多个像素，其中每个像素包括：用于将入射光转换成电荷的光电转换元件; 累积由光电转换元件转换的电荷的累积元件; 用于将由光电转换元件转换的电荷转移到累积元件的第一转移元件; 第二转印元件，用于将累积在积聚元件中的电荷转移到浮动扩散区; 以及用于放大浮动扩散区域中的电荷的放大元件，其中第一传输元件将由光电转换元件转换的电荷多次转移到累积元件，并使累积元件累积地累积转移的电荷 多次。