公开(公告)号：US06737123B2

公开(公告)日：2004-05-18

申请号：US10166759

申请日：2002-06-12

申请人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Tadashi Sawayama ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Hiroyuki Ozaki ,  Yoshinori Sugiura

发明人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Tadashi Sawayama ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Hiroyuki Ozaki ,  Yoshinori Sugiura

IPC分类号： C23C16505

CPC分类号： C23C16/517 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A silicon-based film is formed superimposing a direct-current potential on the high-frequency power to set the potential of the high-frequency power feed section to a potential which is lower by V1 than the ground potential; the V1 satisfying |V2|≦|V1|≦50×|V2|, where V2 is the potential difference from the ground potential, produced in the electrode in the state the plasma has taken place under the same conditions except that the direct-current potential is not superposed on the high-frequency power and the electrode is brought into a non-grounded state. This can provide a silicon-based film having superior characteristics at a high film formation rate, and a semiconductor device making use of this silicon-based film, having superior adherence, environmental resistance, and can enjoy a short tact time at the time of manufacture.

摘要翻译： 形成在高频电力上叠加直流电位的硅基膜，将高频供电部的电位设定为比地电位低V1的电位; 满足| V2 | <= | V1 | <= 50x | V2 |的V1，其中V2是在等离子体在相同条件下发生的状态下在电极中产生的与地电位的电位差， 电流电势不叠加在高频电源上，并且电极进入非接地状态。 这可以提供具有高成膜速度的优异特性的硅基膜和使用该硅基膜的半导体器件，具有优异的附着力，耐环境性，并且可以在制造时享受短的时间 。

公开(公告)号：US06858308B2

公开(公告)日：2005-02-22

申请号：US10092617

申请日：2002-03-08

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Ryo Hayashi ,  Shuichiro Sugiyama

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Ryo Hayashi ,  Shuichiro Sugiyama

IPC分类号： B32B9/00 ,  H01L21/00 ,  H01L21/336 ,  H01L29/04 ,  H01L29/786 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L29/66765 ,  H01L29/045 ,  H01L29/78618 ,  H01L29/78678 ,  H01L29/78696 ,  H01L31/03685 ,  H01L31/075 ,  H01L31/182 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521 ,  Y10T428/261

摘要： The invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal. The microcrystal is located in at least one interface region of the silicon-based film containing the microcrystal and has no orientation property. Further, the invention provides a semiconductor element having a semiconductor junction composed of silicon-based films, at least one of the silicon-based films containing a microcrystal, and the orientation property of the microcrystal changing in a film thickness direction of the silicon-based film containing the microcrystal. Thereby, a silicon-based film having a shortened tact time, an increased film forming rate, and excellent characteristics, and a semiconductor element including this silicon-based film having excellent adhesion and environmental resistance can be obtained.

摘要翻译： 本发明提供了一种半导体元件，其具有由硅基膜构成的半导体结，至少一个含有微晶的硅基膜。 微晶体位于含有微结晶的硅基膜的至少一个界面区域中，并且不具有取向性。 此外，本发明提供一种半导体元件，其具有由硅系膜构成的半导体结，含有微晶的硅系膜中的至少一种以及微晶在硅基膜的膜厚方向上的取向性 含有微晶的薄膜。 由此，可以获得具有缩短的生产时间缩短，成膜速度和优异特性的硅基膜，以及包含这种具有优异的粘附性和耐环境性的硅基膜的半导体元件。

公开(公告)号：US06794275B2

公开(公告)日：2004-09-21

申请号：US10113675

申请日：2002-04-02

申请人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Yuzo Koda ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Koichiro Moriyama

发明人： Takaharu Kondo ,  Shotaro Okabe ,  Masafumi Sano ,  Akira Sakai ,  Yuzo Koda ,  Ryo Hayashi ,  Shuichiro Sugiyama ,  Koichiro Moriyama

IPC分类号： H01L21365

CPC分类号： H01L31/1804 ,  C23C16/46 ,  C23C16/463 ,  C23C16/505 ,  C23C16/52 ,  C23C16/545 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/66765 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1824 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： In a process for forming a silicon-based film on a substrate according to the present invention, the substrate has a temperature gradient in the thickness direction thereof in the formation of the silicon-based film and the temperature gradient is made such that a deposition surface of the substrate has a higher temperature than a backside or the direction of the temperature gradient is reversed. With this configuration, the present invention provides a silicon-based thin film having good properties at a high deposition rate and provides a semiconductor device including it. The present invention also provides a semiconductor device including the silicon-based thin films that has good adhesion and weather-resisting properties and that can be manufactured in a short tact time.

摘要翻译： 在根据本发明的基板上形成硅基膜的方法中，在形成硅基膜时，基板在其厚度方向上具有温度梯度，并使温度梯度使得沉积表面 的衬底具有比背面更高的温度或温度梯度的方向反转。 利用这种结构，本发明提供一种在高沉积速率下具有良好性能的硅基薄膜，并提供包括它的半导体器件。 本发明还提供一种半导体器件，其包括硅基薄膜，其具有良好的粘合性和耐候性，并且可以在短的时间内制造。

公开(公告)号：US06855621B2

公开(公告)日：2005-02-15

申请号：US09983427

申请日：2001-10-24

申请人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Yasuyoshi Takai ,  Ryo Hayashi ,  Toshihiro Yamashita

发明人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Yasuyoshi Takai ,  Ryo Hayashi ,  Toshihiro Yamashita

IPC分类号： C23C16/24 ,  C23C16/505 ,  C23C16/511 ,  C30B25/10 ,  H01L21/205 ,  H01L31/0224 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/04 ,  H01L31/18 ,  H01L21/20 ,  H01L21/26 ,  H01L21/302 ,  H01L21/31

CPC分类号： H01L21/02532 ,  C23C16/24 ,  C23C16/505 ,  C23C16/511 ,  C30B25/105 ,  C30B29/06 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02516 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L31/022466 ,  H01L31/03687 ,  H01L31/0392 ,  H01L31/1816 ,  Y02E10/548

摘要： The method of the present invention is a method of forming a silicon-based semiconductor layer by introducing a source gas into a vacuum vessel and forming a silicon-based semiconductor layer containing a microcrystal on a substrate introduced into the vacuum vessel by plasma CVD, which comprises a first step of forming a first region with a source gas containing halogen atoms, and a second step of forming a second region on the first region under a condition where the source gas containing halogen atoms in the second step is lower in gas concentration than that of the first step, thereby providing a method of forming a silicon-based semiconductor layer having an excellent photoelectric characteristic at a film forming rate of an industrially practical level and a photovoltaic element using the silicon-based semiconductor layer formed by the method.

摘要翻译： 本发明的方法是通过将源气体引入真空容器中并通过等离子体CVD在引入真空容器的基板上形成含有微晶体的硅基半导体层来形成硅基半导体层的方法， 包括用含有卤素原子的源气体形成第一区域的第一步骤，以及在第二步骤中含有卤素原子的气体气体的气体浓度低的条件下，在第一区域上形成第二区域的第二步骤， 从而提供一种以工业实用水平的成膜速度形成具有优异光电特性的硅基半导体层的方法和使用通过该方法形成的硅基半导体层的光电元件。

公开(公告)号：US06653165B2

公开(公告)日：2003-11-25

申请号：US10058322

申请日：2002-01-30

申请人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Koichi Matsuda ,  Yuzo Koda ,  Tadashi Hori

发明人： Takaharu Kondo ,  Masafumi Sano ,  Akira Sakai ,  Koichi Matsuda ,  Yuzo Koda ,  Tadashi Hori

IPC分类号： H01L2100

CPC分类号： H01L31/202 ,  H01L31/056 ,  H01L31/076 ,  H01L31/1884 ,  H01L31/206 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： For efficiently forming a semiconductor element with excellent adhesion and environment resistance, a semiconductor element forming method is configured to have a step of forming a plurality of pin junctions of a silicon-based material on a substrate by a high-frequency plasma CVD process under a pressure of not more than atmospheric pressure, and the method further has a step of forming a p-layer, an i-layer, and a portion of an n-layer of a first pin junction of the pin junctions or forming an n-layer, an i-layer, and a portion of a p-layer of a first pin junction of the pin junctions, and thereafter exposing the p-layer or the n-layer exposed in the surface, to an oxygen-containing atmosphere; a step of forming on the p-layer or the n-layer as exposed to the oxygen-containing atmosphere a layer of the same conductivity type as that of the p-layer or the n-layer; and a step of forming an n-layer or a p-layer of a second pin junction adjacent to the first pin junction to form a pn interface.

公开(公告)号：US06162988A

公开(公告)日：2000-12-19

申请号：US923259

申请日：1997-09-04

申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

IPC分类号： G03G5/08 ,  C23C16/50 ,  C23C16/511 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/00

CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.

摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。

公开(公告)号：US06472296B2

公开(公告)日：2002-10-29

申请号：US09912343

申请日：2001-07-26

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajima

IPC分类号： H01L2120

CPC分类号： C23C16/509 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/02425 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L31/1824 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/545 ,  Y02P70/521

摘要： A process for producing a semiconductor layer by introducing a raw gas into a discharge chamber and supplying high-frequency power to the chamber to decompose the raw gas by discharge, thereby forming a semiconductor layer on a substrate within the discharge chamber, the process comprising the steps of supplying high-frequency power of at least very high frequency (VHF) as the high-frequency power; supplying bias power of direct current power and/or high-frequency power of radio-frequency (RF) together with the high-frequency power of VHF to the discharge chamber; and controlling a direct current component of an electric current flowing into an electrode, to which the bias power is supplied, so as to fall within a range of from 0.1 A/m2 to 10 A/m2 in terms of a current density based on the area of an inner wall of the discharge chamber. A good-quality semiconductor layer can be deposited over a large area at a high speed.

摘要翻译： 一种制造半导体层的方法，该方法是通过将原料气体引入放电室并向室内供给高频电力，以通过放电来分解原料气体，由此在放电室内的基板上形成半导体层，该方法包括 提供至少非常高频（VHF）的高频功率作为高频功率的步骤; 将直流电力和/或射频（RF）的高频功率与VHF的高频功率一起提供给放电室; 并且以电流密度为基础控制流入施加偏压功率的电极的电流的直流分量，以0.1A / m 2至10A / m 2的范围内 放电室内壁面积。 高质量的半导体层可以在大面积上高速沉积。

公开(公告)号：US06313430B1

公开(公告)日：2001-11-06

申请号：US09258208

申请日：1999-02-26

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

IPC分类号： B23K906

CPC分类号： B23K1/206 ,  B23K2101/40

摘要： A high frequency plasma processing apparatus and a high frequency plasma processing method according to the invention can suitably be used for uniformly forming on a substrate a deposition film over a large area. The apparatus and the related method solve the problem wherein high frequency power supplied to a known plasma processing apparatus can become distorted to produce harmonics and give rise to difficulty in correctly reading the incident and reflected powers and realizing an accurate matching when a VHF is used in order to raise the processing rate.

摘要翻译： 根据本发明的高频等离子体处理装置和高频等离子体处理方法可以适用于在大面积上在基板上均匀地形成沉积膜。 该装置和相关方法解决了提供给已知等离子体处理装置的高频功率可能变得失真以产生谐波并导致难以正确读取入射和反射功率并且当使用VHF时实现精确匹配的问题 以提高加工率。

公开(公告)号：US06271055B1

公开(公告)日：2001-08-07

申请号：US09038708

申请日：1998-03-09

申请人： Takahiro Yajima ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

发明人： Takahiro Yajima ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

IPC分类号： H01L2100

CPC分类号： H01L31/202 ,  H01L31/1055 ,  Y02E10/50 ,  Y02P70/521

摘要： A process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor while decreasing the film forming rate thereof and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor. Further, a process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor while increasing the film forming rate thereof. Thereby, a photoelectric conversion element having a high photoelectric conversion efficiency can be obtained with a high productivity.

公开(公告)号：US06436797B1

公开(公告)日：2002-08-20

申请号：US09578906

申请日：2000-05-26

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajimaa

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Koda ,  Takahiro Yajimaa

IPC分类号： H01L2120

CPC分类号： C23C16/509 ,  C23C16/24 ,  C23C16/545

摘要： A film-forming apparatus for forming a non-single crystalline silicon series semiconductor film on a substrate in a film-forming space provided in a vacuum chamber using a very high frequency power supplied through a high frequency power supply means comprising a bar-like shaped electrode, wherein said bar-like shaped electrode is arranged such that the longitudinal direction thereof intersects a direction for said substrate to be moved, and a length of said film-forming space relative to the direction for said substrate to be moved is in a range of from {fraction (1/16)} to ½ of a wavelength of said very high frequency power supplied in said film-forming space. A film-forming method for forming a non-single crystalline silicon series semiconductor film on a substrate using said film-forming apparatus.

摘要翻译： 一种用于在设置在真空室中的成膜空间中的基板上形成非单晶硅系半导体膜的成膜装置，其使用通过高频电源装置提供的非常高频率的功率，所述高频电源包括棒形 电极，其中所述棒状电极被布置成使得其纵向方向与所述基板移动的方向相交，并且所述成膜空间相对于要移动的所述基板的方向的长度在一定范围内 从{分数（1/16）}到在所述成膜空间中提供的所述非常高频率的波长的1/2。 一种使用所述成膜装置在基片上形成非单晶硅系半导体膜的成膜方法。