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363 条记录 (耗时 0.041 秒)

    Method of manufacturing a BIMIS
    1.
    发明授权
    Method of manufacturing a BIMIS 失效
    制造BIMIS的方法

    公开(公告)号：US5773340A

    公开(公告)日：1998-06-30

    申请号：US563335

    申请日：1995-11-28

    申请人： Takahiro Kumauchi ,  Takashi Hashimoto ,  Osamu Kasahara ,  Satoshi Yamamoto ,  Yoichi Tamaki ,  Takeo Shiba ,  Takashi Uchino

    发明人： Takahiro Kumauchi ,  Takashi Hashimoto ,  Osamu Kasahara ,  Satoshi Yamamoto ,  Yoichi Tamaki ,  Takeo Shiba ,  Takashi Uchino

    IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L21/8222 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/165 ,  H01L29/732 ,  H01L29/737

    CPC分类号： H01L21/8249 ,  Y10S148/152

    摘要： A method of manufacturing an improved bipolar transistor or BiCMOS having a phosphorus-doped polysilicon emitter electrode is disclosed. The method comprises forming an emitter electrode wherein a phosphorus-doped amorphous silicon film is deposited at temperature not higher than 540.degree. C. and then subjected to low temperature annealing treatment at a temperature of 600.degree. C. to 750.degree. C., under which the amorphous silicon is converted to a polysilicon and the phosphorus present in the amorphous silicon film is diffused into a base region to form an emitter region, followed by high temperature/short time annealing treatment at a temperature of 900.degree. C. to 950.degree. C. so that an activation rate of an impurity in a boron-doped polysilicon base electrode or source-drain regions of MOS.cndot.FET is improved.

    摘要翻译： 公开了一种制造具有磷掺杂多晶硅发射极电极的改进的双极晶体管或BiCMOS的方法。 该方法包括形成发射电极，其中磷掺杂的非晶硅膜在不高于540℃的温度下沉积，然后在600℃至750℃的温度下进行低温退火处理， 将非晶硅转化为多晶硅，将存在于非晶硅膜中的磷扩散到基极区域，形成发射极区域，然后在900℃〜950℃的温度下进行高温/短时退火处理 从而提高了掺杂多晶硅的多晶硅基极或MOSFET的源极 - 漏极区域中的杂质的活化速率。

    Sheet binding device and image forming apparatus incorporating same
    7.
    发明授权
    Sheet binding device and image forming apparatus incorporating same 有权
    纸张装订装置和包含其的图像形成装置

    公开(公告)号：US09110425B2

    公开(公告)日：2015-08-18

    申请号：US13570838

    申请日：2012-08-09

    申请人： Tetsuo Watanabe ,  Koichi Kudo ,  Yoshinobu Takeyama ,  Takashi Hashimoto ,  Fumihito Masubuchi ,  Natsumi Matsue

    发明人： Tetsuo Watanabe ,  Koichi Kudo ,  Yoshinobu Takeyama ,  Takashi Hashimoto ,  Fumihito Masubuchi ,  Natsumi Matsue

    IPC分类号： G03G15/00 ,  B65H37/04

    CPC分类号： G03G15/6544 ,  B65H37/04 ,  B65H2301/43822 ,  B65H2301/43827 ,  G03G15/50 ,  G03G15/6541 ,  G03G2215/00835

    摘要： An image forming apparatus includes an image forming unit to form an adhesive toner pattern in a predetermined bonding range of a sheet, outside a printable range in which an image according to image data is formed, a stacking unit to stack multiple sheets one on top of another, and a sheet binding device that includes a fusing device to fuse and fix the adhesive toner pattern formed on the multiple sheets to bind the multiple sheets together, and a bonding strength setting unit to determine, in accordance with a desired bonding strength, at least one of a number of color toners used for forming the adhesive toner pattern, a bonding manner, a number of pixels of the adhesive toner pattern, a toner area ratio of the adhesive toner pattern, and a layer thickness of the adhesive toner pattern.

    摘要翻译： 图像形成装置包括：图像形成单元，用于在片材的预定粘合范围内形成粘合剂调色剂图案，其中形成根据图像数据的图像的可印刷范围;堆叠单元， 另一方面，以及一种片材装订装置，其包括熔融和固定形成在多个片材上的粘合剂调色剂图案以将多个片材结合在一起的定影装置，以及接合强度设定单元，根据期望的接合强度， 用于形成粘合剂调色剂图案的多种彩色调色剂中的至少一种，粘合方式，粘合剂调色剂图案的多个像素，粘合剂调色剂图案的调色剂面积比和粘合剂调色剂图案的层厚度。

    Semiconductor device and manufacturing method of semiconductor device
    8.
    发明授权
    Semiconductor device and manufacturing method of semiconductor device 有权
    半导体器件及半导体器件的制造方法

    公开(公告)号：US08969943B2

    公开(公告)日：2015-03-03

    申请号：US13302184

    申请日：2011-11-22

    申请人： Koichi Toba ,  Yasushi Ishii ,  Hiraku Chakihara ,  Kota Funayama ,  Yoshiyuki Kawashima ,  Takashi Hashimoto

    发明人： Koichi Toba ,  Yasushi Ishii ,  Hiraku Chakihara ,  Kota Funayama ,  Yoshiyuki Kawashima ,  Takashi Hashimoto

    IPC分类号： H01L29/792 ,  H01L21/28 ,  H01L27/115

    CPC分类号： H01L27/11568 ,  H01L21/28282 ,  H01L27/11573 ,  H01L29/42344 ,  H01L29/792

    摘要： A semiconductor device with a nonvolatile memory is provided which has improved characteristics. The semiconductor device includes a control gate electrode, a memory gate electrode disposed adjacent to the control gate electrode, a first insulating film, and a second insulating film including therein a charge storing portion. Among these components, the memory gate electrode is formed of a silicon film including a first silicon region positioned over the second insulating film, and a second silicon region positioned above the first silicon region. The second silicon region contains p-type impurities, and the concentration of p-type impurities of the first silicon region is lower than that of the p-type impurities of the second silicon region.

    摘要翻译： 提供了具有非易失性存储器的半导体器件，其具有改进的特性。 半导体器件包括控制栅极电极，与控制栅电极相邻设置的存储栅电极，第一绝缘膜和包括电荷存储部分的第二绝缘膜。 在这些部件中，存储栅电极由包括位于第二绝缘膜上的第一硅区的硅膜和位于第一硅区之上的第二硅区构成。 第二硅区域含有p型杂质，第一硅区域的p型杂质浓度低于第二硅区域的p型杂质浓度。

    Integrated circuit
    9.
    发明授权
    Integrated circuit 有权
    集成电路

    公开(公告)号：US08952499B2

    公开(公告)日：2015-02-10

    申请号：US13641266

    申请日：2011-10-26

    申请人： Takashi Morimoto ,  Takashi Hashimoto

    发明人： Takashi Morimoto ,  Takashi Hashimoto

    IPC分类号： H01L27/06 ,  H01L23/34 ,  H01L29/78 ,  H01L23/522

    CPC分类号： H01L27/0629 ,  H01L23/345 ,  H01L23/5228 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    摘要： An integrated circuit is provided with a substrate, an electrode, two diffusion areas, and a resistance heater. The substrate includes a first surface and second surface that are substantially parallel to each other. The electrode is laminated onto the first surface. The two diffusion areas are disposed within the substrate in the vicinity of the electrode to form one transistor with the electrode. The resistance heater is located on an area of the second surface across the substrate from the electrode. The resistance heater produces heat by allowing electric current to flow.

    摘要翻译： 集成电路设置有基板，电极，两个扩散区域和电阻加热器。 基板包括基本上彼此平行的第一表面和第二表面。 电极层压到第一表面上。 两个扩散区域设置在电极附近的衬底内，以形成具有电极的一个晶体管。 电阻加热器位于从电极穿过基板的第二表面的区域上。 电阻加热器通过允许电流流动来产生热量。

    Multiple viewpoint imaging control device, multiple viewpoint imaging control method and computer readable medium
    10.
    发明授权
    Multiple viewpoint imaging control device, multiple viewpoint imaging control method and computer readable medium 有权
    多视点成像控制装置，多视点成像控制方法和计算机可读介质

    公开(公告)号：US08933996B2

    公开(公告)日：2015-01-13

    申请号：US13203829

    申请日：2011-04-13

    申请人： Takashi Hashimoto

    发明人： Takashi Hashimoto

    IPC分类号： H04N13/02 ,  H04N13/00

    CPC分类号： H04N13/221 ,  H04N13/00 ,  H04N13/10 ,  H04N13/106 ,  H04N13/117 ,  H04N13/20 ,  H04N13/207 ,  H04N13/211 ,  H04N13/279 ,  H04N13/282 ,  H04N13/296

    摘要： When images from multiple viewpoints are required, respective imaging locations of the multiple viewpoints are specified and imaging operations themselves may be executed simply. When image data is to be imaged from plural viewpoints that are elements for generating a three-dimensional form of a specific subject, a user is appropriately guided. Messages prompting ranging directly in front of the specific subject, movement from the ranging position to an imaging start point, and movement from the imaging start point to an imaging end point are displayed in a message display region of an LCD monitor or the like. In addition, from analysis of a through-image, positions of a digital camera are automatically identified and automatic imaging is carried out on the basis of movements of feature points.

    摘要翻译： 当需要来自多个视点的图像时，指定多个视点的各自的成像位置，并且可以简单地执行成像操作本身。 当从作为用于产生特定对象的三维形式的元素的多个视点成像图像数据时，用户被适当地引导。 在LCD监视器等的消息显示区域中显示提示直接在特定对象前方测距的消息，从测距位置到成像开始点的移动以及从成像起点到成像终点的移动。 此外，通过分析直通图像，自动识别数字照相机的位置，并且基于特征点的移动进行自动成像。