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    Semiconductor laser device and semiconductor optical modulator
    1.
    发明授权
    Semiconductor laser device and semiconductor optical modulator 有权
    半导体激光器件和半导体光调制器

    公开(公告)号：US07329894B2

    公开(公告)日：2008-02-12

    申请号：US11202285

    申请日：2005-08-12

    申请人： Takeshi Kitatani ,  Masahiro Aoki ,  Tomonobu Tsuchiya

    发明人： Takeshi Kitatani ,  Masahiro Aoki ,  Tomonobu Tsuchiya

    IPC分类号： H01L29/02 ,  H01L47/00

    CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/34306 ,  H01S5/34366 ,  H01S2304/04

    摘要： Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transport of carriers and deteriorated device characteristics.According to the present invention, an energy band structure that makes it possible, in one energy band (e.g., a valence band), to smoothly transport carriers of one of two kinds (e.g., holes) by connecting energy discontinuity in an inclined form or stepwise, and at the same, in the other energy band (e.g., a conduction band), to maintain a barrier effect for carriers of the other kind (e.g., electrons) by retaining energy discontinuity, can be realized for improved transport characteristics of carriers at the heterointerface forming the band line-up of type II.

    摘要翻译： 由于包含V族构成原子的种类不同的III-V族合金半导体层的叠层结构的半导体器件形成II型所谓的带阵列，所以异质结构中的带状不连续性阻碍了 载体和劣化的器件特性。 根据本发明，能量带结构在一个能带（例如价带）中可以通过以倾斜的形式连接能量不连续来平稳地输送两种（例如，孔）中的一种的载体， 并且在另一个能带（例如，导带）中，通过保持能量不连续性来维持另一种载流子（例如电子）的阻挡效应，可以实现用于改善载流子的运输特性 在形成II型频带阵列的异质界面处。

    Semiconductor optical device
    2.
    发明申请
    Semiconductor optical device 有权
    半导体光学器件

    公开(公告)号：US20060237710A1

    公开(公告)日：2006-10-26

    申请号：US11202285

    申请日：2005-08-12

    申请人： Takeshi Kitatani ,  Masahiro Aoki ,  Tomonobu Tsuchiya

    发明人： Takeshi Kitatani ,  Masahiro Aoki ,  Tomonobu Tsuchiya

    IPC分类号： H01L29/06

    CPC分类号： H01S5/34313 ,  B82Y20/00 ,  H01S5/2009 ,  H01S5/3213 ,  H01S5/3216 ,  H01S5/34306 ,  H01S5/34366 ,  H01S2304/04

    摘要： Since the semiconductor devices including a stacked structure of group-III-V alloy semiconductor layers different in the kind of group-V constituent atom form the so-called band line-up of type II, band discontinuity in the heterostructure has impeded smooth transport of carriers and deteriorated device characteristics. According to the present invention, an energy band structure that makes it possible, in one energy band (e.g., a valence band), to smoothly transport carriers of one of two kinds (e.g., holes) by connecting energy discontinuity in an inclined form or stepwise, and at the same, in the other energy band (e.g., a conduction band), to maintain a barrier effect for carriers of the other kind (e.g., electrons) by retaining energy discontinuity, can be realized for improved transport characteristics of carriers at the heterointerface forming the band line-up of type II.

    摘要翻译： 由于包含V族构成原子的种类不同的III-V族合金半导体层的叠层结构的半导体器件形成II型所谓的带阵列，所以异质结构中的带状不连续性阻碍了 载体和劣化的器件特性。 根据本发明，能量带结构在一个能带（例如价带）中可以通过以倾斜的形式连接能量不连续来平稳地输送两种（例如，孔）中的一种的载体， 并且在另一个能带（例如，导带）中，通过保持能量不连续性来维持另一种载流子（例如电子）的阻挡效应，可以实现用于改善载流子的运输特性 在形成II型频带阵列的异质界面处。

    Manufacturing method of semiconductor laser diode
    5.
    发明授权
    Manufacturing method of semiconductor laser diode 有权
    半导体激光二极管的制造方法

    公开(公告)号：US06821801B1

    公开(公告)日：2004-11-23

    申请号：US10777071

    申请日：2004-02-13

    申请人： Hiroshi Sato ,  Tomonobu Tsuchiya ,  Masahiro Aoki ,  Takeshi Kitatani ,  Noritsugu Takahashi

    发明人： Hiroshi Sato ,  Tomonobu Tsuchiya ,  Masahiro Aoki ,  Takeshi Kitatani ,  Noritsugu Takahashi

    IPC分类号： H01L2100

    CPC分类号： B82Y20/00 ,  H01L31/1075 ,  H01S5/026 ,  H01S5/028 ,  H01S5/0425 ,  H01S5/1014 ,  H01S5/1228 ,  H01S5/2201 ,  H01S5/222 ,  H01S5/2223 ,  H01S5/2224 ,  H01S5/2231 ,  H01S5/227 ,  H01S5/2275 ,  H01S5/3211 ,  H01S5/34306 ,  H01S5/3436 ,  H01S2304/04

    摘要： The invention provides a manufacturing method of a laser diode having buried grown layer with less crystal defects and with low consumption power and having high reliability in a buried heterostructure laser diode using an InGaAlAs type material as an active layer, by preventing the inhibition of burying and regrowing of the active layer caused by oxidation of Al contained in the active layer. A manufacturing method of a semiconductor laser diode and the active layer comprises a material at least containing Al and having a buried hetero-cross sectional structure, formation of the buried heterostructure, comprising the steps of fabricating the active layer into a stripe shape or mesa shape by etching including at least wet etching, cleaning the stripe-shape sidewall of the core layer with a gas containing chlorine or other halogen element in a crystal growing apparatus and burying the active layer in the semiconductor.

    摘要翻译： 本发明提供了一种激光二极管的制造方法，其具有埋入生长层，其具有较少的晶体缺陷和低功耗，并且在使用InGaAlAs型材料作为有源层的掩埋异质结构激光二极管中具有高可靠性，通过防止掩埋和 一种半导体激光二极管和有源层的制造方法，包括至少包含Al并具有埋入异质截面结构的材料，形成埋入异质结构 包括以下步骤：通过至少包括湿法蚀刻的蚀刻将活性层制成条形或台面形状，在晶体生长装置中用含氯或其它卤素元素的气体清洗芯层的条状侧壁，并将其埋入 半导体中的有源层。

    Wavelength tunable laser and optical device
    7.
    发明授权
    Wavelength tunable laser and optical device 失效
    波长可调激光器和光学器件

    公开(公告)号：US06700910B1

    公开(公告)日：2004-03-02

    申请号：US09503740

    申请日：2000-02-15

    申请人： Masahiro Aoki ,  Shinya Sasaki ,  Tomonobu Tsuchiya ,  Hiroyuki Gomyo

    发明人： Masahiro Aoki ,  Shinya Sasaki ,  Tomonobu Tsuchiya ,  Hiroyuki Gomyo

    IPC分类号： H01S500

    CPC分类号： H01S5/0265 ,  B82Y20/00 ,  H01S5/0261 ,  H01S5/0425 ,  H01S5/0612 ,  H01S5/12 ,  H01S5/2213 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/34373 ,  H01S2301/173

    摘要： In order to form a wavelength tunable laser capable of tuning a wave over a wide range by simple control means, a thin film heater is mounted either over an upper electrode of a ridge waveguide semiconductor laser having ridge waveguides on a semiconductor substrate or over the semiconductor substrate and on both sides of the ridge waveguide with a gap of a few &mgr;m. By controlling a current passed to the thin film heater, the oscillation wavelength of the semiconductor laser is tuned. In the case where the thin film heater is mounted over an upper electrode of a ridge waveguide, a nonconductor is formed on both sides of the ridge conductor to more efficiently enable heat from the heater to reach an active layer of the ridge waveguide more efficiently.

    摘要翻译： 为了形成能够通过简单的控制装置在宽范围内调谐波长的波长可调激光器，薄膜加热器安装在半导体衬底上或半导体衬底上的具有脊波导的脊波导半导体激光器的上电极 基板和脊波导的两侧，间隙为几毫米。 通过控制流过薄膜加热器的电流，调整半导体激光器的振荡波长。 在薄膜加热器安装在脊波导的上电极的情况下，在脊导体的两侧形成非导体，以更有效地使来自加热器的热量更有效地到达脊波导的有源层。