摘要:
A plane grating, particularly for a monochronomator, is provided with varied-spaced straight and parallel grooves in a light beam path to compensate for other light affecting components, for example a spherical mirror used for collimating or focusing the light beam. The angle of incidence with respect to the light for each of the grooves may vary and the angle of diffraction with respect to the light for each groove may be required to vary with the imperfection of collimation and focusing of the beam. The grooves are varied in their spacing to compensate for the variation of both incidence and diffraction direction.
摘要:
A spectrometer is disclosed, in which plural entrance slits are mounted, and a reference light passing through one entrance slit and the light to be measured passing through the other entrance slit are simultaneously focused on a photo-sensitive surface of a detector through a diffraction grating and a focusing optical system, to measure the wavelength of the light to be measured precisely by using the reference light as a standard.
摘要:
A pattern detector according to the present invention adopts a processing method wherein means is provided anew with which the intensity distribution of light reflected from or transmitted through an illuminated specimen is photoelectrically converted, and a pattern position is detected at high speed from the ratio between the primary moment and integral value of a detection signal thus derived, whereupon a symmetry calculation is executed within a narrow range around the detected value, whereby the pattern position is found fast and precisely.
摘要:
A method of and an apparatus for detecting a defect on a phase-shifting mask for use in a projection aligner in which either or both of respective intensities of transmitted and reflected light beams from the mask illuminated with light are used for detecting a defect on the mask.
摘要:
A pattern generator in which a workpiece to be machined into a desired pattern shape is held in vacuum and is irradiated with a laser beam condensed to be fine, while scanning the laser beam so as to depict the desired pattern shape, whereby the workpiece is directly machined in conformity with the desired pattern shape. As the workpiece, one in which a shading film (for example, chromium film) is deposited on a transparent glass substrate is employed, and it is irradiated with the laser beam in the vacuum, whereby the irradiated parts of the shading film are vaporized to fabricate a shading mask pattern of good quality.
摘要:
A pattern detecting apparatus is disclosed which comprises, in order to detect the center of a positioning pattern on a sample with high accuracy in a wide range, means for illuminating the positioning pattern, means for defining an illumination range in which the positioning pattern is illuminated, means for focusing reflected light from the positioning pattern on a predetermined image plane, means for electrically detecting a bright and dark image on the image plane in accordance with positions on the image plane, means for removing a signal corresponding to the outside of the illumination range from the output signal of the detecting means and for holding, in place of the removed signal, a level of the output signal produced within the illumination range, and means for detecting a position of the center of the positioning pattern from the output signal of the holding means.
摘要:
A pattern printing method includes a step of printing a pattern on a wafer on the basis of a target mark provided on the surface of the wafer which is opposite to the surface thereof on which the pattern is to be printed. Also disclosed is a pattern printing apparatus which comprises detecting means for detecting a target mark provided on the surface of a wafer which is opposite to the surface thereof on which a pattern is to be printed, and pattern printing means for printing the pattern on the pattern printing surface of the wafer on the basis of mark position data obtained by the detecting means.
摘要:
A pattern detector for precise position measurement of a wafer, used in a mask aligner used in manufacturing a semiconductor device is disclosed. A positioning pattern on the wafer is magnified and projected by a magnifying optical system and the magnified projected image is precisely detected to determine a position of the positioning pattern. As a light to form the magnified projected image, plurality of monochromatic lights of different wavelengths are available through optical filters and the magnifying optical systems are arranged one for each of the monochromatic lights. By selecting one of the optical filters, the magnified projected image of the positioning pattern is formed by the monochromatic light having an optimum wavelength to the wafer and the precise position of the positioning pattern on the wafer can be detected.
摘要:
An automatic focusing apparatus according to the present invention is constructed of a base on which a substrate is placed, detection means for detecting a pressure of air which is caused to flow out of an interspace between the substrate and an orifice by spurting the air from the orifice toward the substrate, reference pressure generation means for generating a reference pressure which is necessary for setting a standard distance between the substrate and the orifice, a pressure transducer which receives pressure signals from said detection means and said reference pressure generation means and which converts a pressure difference between these pressure signals into an electric signal, base drive means for moving the substrate in parallel with the orifice on the basis of the output signal from said pressure transducer, and offset signal generation means for generating a signal which, when superposed on the output signal from said pressure transducer, serves to shift the substrate from the standard distance.
摘要:
There is provided a method of high-sensitively detecting both of a phase defect existing in a mask blank and a phase defect remaining after manufacturing an EUVL mask. When the mask blank is inspected, EUV light having illumination NA to be within an inner NA but a larger value is irradiated. When the EUVL mask is inspected, by using a dark-field imaging optical system including a center shielding portion for shielding EUV light and a linear shielding portion for shielding the EUV light whose width is smaller than a diameter of the center shielding portion, the center shielding portion and the linear shielding portion being included in a pupil plane, the EUV light having illumination NA as large as or smaller than the width of the linear shielding portion is irradiated.