公开(公告)号：US06687987B2

公开(公告)日：2004-02-10

申请号：US09875443

申请日：2001-06-06

申请人： Theresa S. Mayer ,  Thomas N. Jackson ,  Christopher D. Nordquist

发明人： Theresa S. Mayer ,  Thomas N. Jackson ,  Christopher D. Nordquist

IPC分类号： H05K330

CPC分类号： H01L24/95 ,  B82Y30/00 ,  H01L25/50 ,  H01L2224/95085 ,  H01L2224/95122 ,  H01L2224/95145 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/3025 ,  Y10T29/49004 ,  Y10T29/49117 ,  Y10T29/49128 ,  Y10T29/4913

摘要： An electro-fluidic assembly process for integration of an electronic device or component onto a substrate which comprises: disposing components within a carrier fluid; attracting the components to an alignment sites on the substrate by means of electrophoresis or dielectrophoresis; and aligning the components within the alignment site by means of energy minimization. The substrate comprises: a biased backplane layer, a metal plane layer having one or more alignment sites, a first insulating layer disposed between the backplane layer and the metal plane layer, and a second insulating layer, e.g., benzocyclobute, having a recess disposed therein, wherein the second insulating layer is on the surface of the metal plane layer opposite from the first insulating layer and wherein the recess is in communication with the alignment site.

摘要翻译： 一种用于将电子装置或部件集成到基板上的电流装配工艺，包括：将部件放置在载体流体内; 通过电泳或介电电泳将组分吸引到底物上的取向位点; 并通过能量最小化对齐对准位置内的组分。 衬底包括：偏置的背板层，具有一个或多个取向位置的金属平面层，设置在背板层和金属平面层之间的第一绝缘层，以及设置在其中的凹部的例如benzocyclobute的第二绝缘层， ，其中所述第二绝缘层在与所述第一绝缘层相反的所述金属平面层的表面上，并且所述凹部与所述对准部位连通。

公开(公告)号：US07420524B2

公开(公告)日：2008-09-02

申请号：US10821765

申请日：2004-04-09

申请人： Douglas H. Werner ,  Thomas N. Jackson ,  Gareth J. Knowles

发明人： Douglas H. Werner ,  Thomas N. Jackson ,  Gareth J. Knowles

IPC分类号： H01Q15/02

CPC分类号： H01Q1/38 ,  H01Q1/40 ,  H01Q15/002 ,  H01Q17/00

摘要： A reconfigurable frequency selective surface (FSS) includes a plurality of conducting patches supported on the surface of a dielectric layer, with selectable electrical interconnections between the conducting patches so as to provide a desired characteristic. The reconfigurable FSS can be used in a reconfigurable artificial magnetic conductor (AMC). A reconfigurable AMC includes a dielectric layer, a conducting back-plane on one surface of the dielectric layer, and a reconfigurable FSS on the other surface of the dielectric layer. A reconfigurable AMC can be used as a dynamically reconfigurable ground plane for a low-profile antenna system.

摘要翻译： 可重新配置的频率选择表面（FSS）包括在电介质层的表面上支撑的多个导电贴片，并且在导电贴片之间具有可选择的电互连，从而提供期望的特性。 可重构FSS可用于可重构人造磁导体（AMC）。 可重新配置的AMC包括电介质层，在介电层的一个表面上的导电背面，以及介电层另一表面上的可重新配置的FSS。 可重配置AMC可用作低调天线系统的动态可重配置接地层。

公开(公告)号：US06566172B1

公开(公告)日：2003-05-20

申请号：US09103206

申请日：1998-06-23

申请人： Thomas N. Jackson ,  Daniel B. Thomasson

发明人： Thomas N. Jackson ,  Daniel B. Thomasson

IPC分类号： H01L2100

CPC分类号： H01L29/66765 ,  H01L29/78669

摘要： The method of the invention configures a tri-layer thin film transistor (TFT) on a substrate, the TFT including a stack including a gate electrode supported by the substrate, followed by a first layer of insulator, a layer of semiconductor and a second layer of insulator. The method employs a first step of illumination through the substrate, as shadowed by said gate electrode, to enable a patterning of the second layer of insulator into an insulator patch which is aligned with the gate electrode. A next step of illumination through the substrate, as shadowed by said gate electrode, enables a patterning of metallization contacts for the TFT in alignment with the insulator patch.

摘要翻译： 本发明的方法在衬底上配置三层薄膜晶体管（TFT），该TFT包括一个包括由衬底支撑的栅极的堆叠，随后是第一绝缘体层，半导体层和第二层 的绝缘子。 所述方法采用通过所述栅电极遮蔽的衬底的照明的第一步骤，以使得能够将第二绝缘体层图案化为与栅电极对准的绝缘体贴片。 通过所述栅电极遮蔽的通过衬底的照明的下一步骤使得能够对与绝缘体贴片对准的TFT的金属化触点进行图案化。

公开(公告)号：US4757369A

公开(公告)日：1988-07-12

申请号：US60700

申请日：1987-06-10

申请人： Thomas N. Jackson ,  Peter D. Kirchner ,  George D. Pettit ,  Richard F. Rutz ,  Jerry M. Woodall

发明人： Thomas N. Jackson ,  Peter D. Kirchner ,  George D. Pettit ,  Richard F. Rutz ,  Jerry M. Woodall

IPC分类号： H01L21/338 ,  H01L21/28 ,  H01L21/285 ,  H01L29/41 ,  H01L29/43 ,  H01L29/45 ,  H01L29/80 ,  H01L29/812 ,  H01L29/167 ,  H01L23/48 ,  H01L29/161 ,  H01L29/62

CPC分类号： H01L21/28581 ,  H01L21/28575 ,  H01L29/452

摘要： A layer of an amphoteric dopant on the surface of a group III-V intermetallic semiconductor crystal will diffuse into the crystal surface in a heating cycle forming a stable contact. The contact can be ohmic or rectifying depending on the localized presence of an excess of one crystal ingredient. A layer of Si on GaAs upon heating forms a rectifying contact. When the layer of Si contains As, the contact is ohmic.

摘要翻译： 在III-V族金属间半导体晶体表面上的两性掺杂剂层将在形成稳定接触的加热循环中扩散到晶体表面。 接触可以是欧姆的或整流的，这取决于过量的一种晶体成分的局部存在。 在加热时GaAs上的Si层形成整流接触。 当Si层含有As时，接触是欧姆的。

公开(公告)号：US4532532A

公开(公告)日：1985-07-30

申请号：US644845

申请日：1984-08-27

申请人： Thomas N. Jackson

发明人： Thomas N. Jackson

IPC分类号： H01L21/28 ,  H01L29/48 ,  H01L29/80

CPC分类号： H01L21/2815 ,  H01L21/28

摘要： A submicron conductor is formed by placing a metal member over an insulator both terminating at a common defined edge. An angularly deposited metal against the edge provides a broad metal conductor attached along the entire edge of a thin metal member which is positioned on the substrate on a narrow line with the width defined by the horizontal component of the angular deposition. A removal operation removes with respect to the vertical component of the angular deposition the excess angularly deposited metal and leaves a vertical, very narrow metal conductor having a horizontal metal over the dielectric in electrical and supporting contact along the entire length. The asymmetry of the conductor provides field effect transistor advantages.

公开(公告)号：US20140193945A1

公开(公告)日：2014-07-10

申请号：US13731728

申请日：2012-12-31

申请人： Yuanyuan Li ,  Kaige Sun ,  Thomas N. Jackson

发明人： Yuanyuan Li ,  Kaige Sun ,  Thomas N. Jackson

IPC分类号： H01L21/465 ,  H01L21/463

CPC分类号： H01L21/465 ,  H01L21/31111 ,  H01L21/463 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/6776 ,  H01L29/7869

摘要： Disclosed herein is an aqueous alkaline etching solution comprising water and an alkaline material being selected from the group consisting of ammonium hydroxide, ammonium phosphate, ammonium carbonate, quaternary ammonium hydroxide, quaternary ammonium phosphate, quaternary ammonium carbonate, an alkali metal hydroxide, an alkaline earth metal hydroxide, or a combination comprising at least one of the foregoing alkaline materials; the aqueous alkaline solution being operative to etch aluminum oxide at a rate greater than or equal to about 2:1 over a rate at which it etches a metal oxide semiconductor to be protected; wherein the aqueous etching solution has a pH of 8 to 13.

摘要翻译： 本文公开了一种水性碱性蚀刻溶液，其包含水和碱性材料，其选自氢氧化铵，磷酸铵，碳酸铵，季铵氢氧化物，季铵磷酸盐，碳酸季铵，碱金属氢氧化物，碱土金属 金属氢氧化物或包含至少一种上述碱性物质的组合; 所述碱性水溶液以蚀刻要保护的金属氧化物半导体的速率在大于或等于约2:1的速率下蚀刻氧化铝; 其中所述水性蚀刻溶液的pH为8〜13。

公开(公告)号：US08197914B2

公开(公告)日：2012-06-12

申请号：US11284193

申请日：2005-11-21

申请人： Diwakar Garg ,  Philip Bruce Henderson ,  Daniel Joseph Tempel ,  Thomas N. Jackson ,  Jie Sun

发明人： Diwakar Garg ,  Philip Bruce Henderson ,  Daniel Joseph Tempel ,  Thomas N. Jackson ,  Jie Sun

IPC分类号： H05H1/24

CPC分类号： C03C17/245 ,  C03C2217/216 ,  C03C2217/24 ,  C03C2217/241 ,  C03C2218/153 ,  C23C16/407

摘要： The present invention discloses plasma enhanced chemical vapor deposition (PECVD) process for depositing n-type and p-type zinc oxide-based transparent conducting oxides (TCOs) at low temperatures with excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers. Specifically, it discloses PECVD process for depositing n-type ZnO by doping it with B or F and p-type ZnO by doping it with nitrogen excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers for TCO application. The process utilizes a mixture of volatile zinc compound, argon and/or helium as a diluent gas, carbon dioxide as an oxidant, and a dopant or reactant to deposit the desired ZnO-based TCOs.

摘要翻译： 本发明公开了一种用于在低温下沉积n型和p型氧化锌基透明导电氧化物（TCO）的等离子体增强化学气相沉积（PECVD）工艺，在玻璃和温度敏感材料如塑料上具有优异的光学和电学性能 和聚合物。 具体地说，它公开了用于通过用B或F和p型ZnO掺杂以将氮掺杂在玻璃上的优异的光学和电学性质以及用于TCO应用的诸如塑料和聚合物的温度敏感材料来沉积n型ZnO的PECVD工艺。 该方法利用挥发性锌化合物，氩和/或氦气作为稀释气体，二氧化碳作为氧化剂和掺杂剂或反应物的混合物以沉积所需的ZnO基TCO。

公开(公告)号：US06885345B2

公开(公告)日：2005-04-26

申请号：US10712666

申请日：2003-11-13

申请人： Thomas N. Jackson

发明人： Thomas N. Jackson

IPC分类号： H01Q3/40 ,  H01Q21/00 ,  H01Q21/06 ,  H01Q1/38

CPC分类号： H01Q3/40 ,  H01Q21/00 ,  H01Q21/061

摘要： Passive or active pixelized antenna structures are described in which the radio-frequency (RF) tuning of individual antenna pixel elements, the connections of individual antenna pixel elements to other antenna elements, and optionally the local phase of individual elements or groups of elements, is varied and controlled using tunable elements. Efficient and low-cost control of a large number of tunable elements is provided by matrix addressing techniques.

摘要翻译： 描述了被动或主动的像素化天线结构，其中单个天线像素元件的射频（RF）调谐，各个天线像素元件与其他天线元件的连接以及可选地各个元件或元件组的局部相位是 使用可调谐元件进行变化和控制。 通过矩阵寻址技术提供了大量可调元件的高效和低成本的控制。

公开(公告)号：US4638342A

公开(公告)日：1987-01-20

申请号：US419381

申请日：1982-09-17

申请人： John L. Freeouf ,  Thomas N. Jackson ,  Steven E. Laux ,  Jerry M. Woodall

发明人： John L. Freeouf ,  Thomas N. Jackson ,  Steven E. Laux ,  Jerry M. Woodall

IPC分类号： H01L29/80 ,  H01L21/338 ,  H01L29/772 ,  H01L29/812 ,  H01L29/56

CPC分类号： H01L29/8122 ,  H01L29/7722

摘要： An electrical device which employs two-dimensional space charge modulation in a semiconductor structure. The device has an approximately Debye length wide contact and a rectifying contact positioned adjacent to each other within a Debye length on a semiconductor body and a contact remotely positioned. A bias on the rectifying contact will effect conduction between the other contacts.

摘要翻译： 一种在半导体结构中采用二维空间电荷调制的电子装置。 该器件在半导体本体上的德拜长度和远程定位的触点之间具有大致德拜长度的宽触点和整流触点彼此相邻定位。 整流触点的偏压将影响其他触点之间的导通。

公开(公告)号：US4597825A

公开(公告)日：1986-07-01

申请号：US718987

申请日：1985-04-02

申请人： John L. Freeouf ,  Thomas N. Jackson ,  Peter Oelhafen ,  George D. Pettit ,  Jerry M. Woodall

发明人： John L. Freeouf ,  Thomas N. Jackson ,  Peter Oelhafen ,  George D. Pettit ,  Jerry M. Woodall

IPC分类号： H01L21/314 ,  H01L23/29 ,  H01L23/31 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L23/3171 ,  H01L21/314 ,  H01L23/291 ,  H01L23/298 ,  H01L2924/0002

摘要： Crystalline compound semiconductors are passivated with a layer of the most volatile element thereof to prevent the formation of oxides that would interfere with further processing. A GaAs crystal is provided with a surface layer of arsenic. The arsenic layer is formed by exposure to light having a photon energy greater than 1.8 eV, at a power density of 0.01 to 0.5 watts per cm.sup.2 while the GaAs immersed in a 1:1 HCl:H.sub.2 O solution for a period of 10-30 minutes. The intermediate processing passivated GaAs crystal may be stored and handled in air and the As layer is removed by low temperature baking.

摘要翻译： 结晶化合物半导体被其最易挥发的元素层钝化以防止会妨碍进一步加工的氧化物的形成。 GaAs晶体设置有砷的表面层。 通过暴露于具有大于1.8eV的光子能量的光而形成砷层，功率密度为0.01至0.5瓦特/ cm2，而GaAs浸入1:1的HCl:H 2 O溶液中10-30分钟 。 中间处理钝化GaAs晶体可以在空气中储存和处理，并且通过低温烘烤除去As层。