公开(公告)号：US08821601B2

公开(公告)日：2014-09-02

申请号：US13345827

申请日：2012-01-09

申请人： Tomokazu Yokoi ,  Shuhei Yoshitomi ,  Kensuke Yoshizumi

发明人： Tomokazu Yokoi ,  Shuhei Yoshitomi ,  Kensuke Yoshizumi

IPC分类号： B01J7/00 ,  H01M8/06 ,  B01J19/00

CPC分类号： H01M8/065 ,  C01B3/0031 ,  C01B3/06 ,  C01B2203/066 ,  H01M8/0606 ,  Y02E60/327 ,  Y02E60/364

摘要： A hydrogen generating element which can supply hydrogen efficiently and stably, is safe, and has low environmental load is provided. Further, a hydrogen generation device to which the hydrogen generating element is applied is provided. Furthermore, a power generation device and a driving device to each of which the hydrogen generation device is applied are provided. A hydrogen generating element in which a needle-like or dome-like silicon microstructure is formed over a base may be used and reacted with water, whereby hydrogen is efficiently generated. The hydrogen generating element may be applied to a hydrogen generation device. The hydrogen generation device may be applied to a power generation device and a driving device.

摘要翻译： 能够有效且稳定地供给氢的氢发生元件是安全的，并且具有低的环境负荷。 此外，提供了应用氢生成元件的氢生成装置。 此外，提供了施加氢生成装置的发电装置和驱动装置。 可以使用其中在基底上形成针状或圆顶状硅微结构的氢发生元件，并与水反应，从而有效地产生氢。 氢生成元件可以应用于氢生成装置。 氢发生装置可以应用于发电装置和驱动装置。

公开(公告)号：US08969866B2

公开(公告)日：2015-03-03

申请号：US13173484

申请日：2011-06-30

申请人： Tomokazu Yokoi ,  Kensuke Yoshizumi

发明人： Tomokazu Yokoi ,  Kensuke Yoshizumi

IPC分类号： H01L29/06 ,  H01L29/45 ,  H01L21/285 ,  H01L21/768 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L29/45 ,  H01L21/28525 ,  H01L21/76879 ,  H01L29/458 ,  H01L29/78 ,  H01L29/7869 ,  H01L2221/1094

摘要： Provided is a structure to obtain a reliable electrical contact through a narrow contact hole formed in an insulating layer, which is required in the miniaturization of a semiconductor device. An exemplified structure includes a thin film transistor comprising: a lower electrode over and in contact with a semiconductor layer, the lower electrode comprising a metal or a metal compound; an insulating layer over the lower electrode, the insulating layer having a contact hole reaching the lower electrode; a conductive silicon whisker grown from a surface of the lower electrode; and an upper electrode over the insulating layer and in contact with the conductive silicon whisker. The ability of the conductive silicon whisker grown from the lower electrode to ohmically contact with the lower and upper electrodes leads to a reliable electrical contact between the thin film transistor and a wiring.

摘要翻译： 提供了通过形成在半导体器件的小型化所需的绝缘层中的窄接触孔获得可靠的电接触的结构。 示例性结构包括薄膜晶体管，其包括：在半导体层上方并与其接触的下电极，所述下电极包括金属或金属化合物; 在所述下电极上的绝缘层，所述绝缘层具有到达所述下电极的接触孔; 从下电极的表面生长的导电硅晶须; 以及在绝缘层上方并与导电硅晶须接触的上电极。 从下电极生长的导电硅晶须与下电极和上电极欧姆接触的能力导致薄膜晶体管和布线之间的可靠的电接触。

公开(公告)号：US20120001180A1

公开(公告)日：2012-01-05

申请号：US13173484

申请日：2011-06-30

申请人： Tomokazu Yokoi ,  Kensuke Yoshizumi

发明人： Tomokazu Yokoi ,  Kensuke Yoshizumi

IPC分类号： H01L29/786

CPC分类号： H01L29/45 ,  H01L21/28525 ,  H01L21/76879 ,  H01L29/458 ,  H01L29/78 ,  H01L29/7869 ,  H01L2221/1094

摘要： Provided is a structure to obtain a reliable electrical contact through a narrow contact hole formed in an insulating layer, which is required in the miniaturization of a semiconductor device. An exemplified structure includes a thin film transistor comprising: a lower electrode over and in contact with a semiconductor layer, the lower electrode comprising a metal or a metal compound; an insulating layer over the lower electrode, the insulating layer having a contact hole reaching the lower electrode; a conductive silicon whisker grown from a surface of the lower electrode; and an upper electrode over the insulating layer and in contact with the conductive silicon whisker. The ability of the conductive silicon whisker grown from the lower electrode to ohmically contact with the lower and upper electrodes leads to a reliable electrical contact between the thin film transistor and a wiring.

摘要翻译： 提供了通过形成在半导体器件的小型化所需的绝缘层中的窄接触孔获得可靠的电接触的结构。 示例性结构包括薄膜晶体管，其包括：在半导体层上方并与其接触的下电极，所述下电极包括金属或金属化合物; 在所述下电极上的绝缘层，所述绝缘层具有到达所述下电极的接触孔; 从下电极的表面生长的导电硅晶须; 以及在绝缘层上方并与导电硅晶须接触的上电极。 从下电极生长的导电硅晶须与下电极和上电极欧姆接触的能力导致薄膜晶体管和布线之间的可靠的电接触。

公开(公告)号：US08785766B2

公开(公告)日：2014-07-22

申请号：US13161669

申请日：2011-06-16

申请人： Yoshinobu Asami ,  Tomokazu Yokoi

发明人： Yoshinobu Asami ,  Tomokazu Yokoi

IPC分类号： H01L31/06

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/0262 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/0384 ,  H01L31/075 ,  H01L31/18 ,  Y02E10/52 ,  Y02E10/548

摘要： A novel photoelectric conversion device in which energy of light can be effectively utilized and performance can be improved is provided. A photoelectric conversion device includes a photoelectric conversion element and an energy conversion layer provided on a light-receiving side of a photoelectric conversion layer included in the photoelectric conversion element. The energy conversion layer includes a plurality of first layers and a plurality of second layers. The first layer and the second layer are alternately stacked. The thickness of the first layer is greater than or equal to 0.5 nm and less than or equal to 10 nm, and the thickness of the second layer is greater than or equal to 0.5 nm and less than or equal to 10 nm. The second layer can be formed using a material having a larger energy band gap than that of a material used for the first layer.

摘要翻译： 提供了能够有效利用光的能量并提高性能的新颖的光电转换装置。 光电转换装置包括光电转换元件和设置在包含在光电转换元件中的光电转换层的光接收侧的能量转换层。 能量转换层包括多个第一层和多个第二层。 第一层和第二层交替堆叠。 第一层的厚度大于或等于0.5nm且小于或等于10nm，第二层的厚度大于或等于0.5nm且小于或等于10nm。 可以使用具有比用于第一层的材料更大的能带隙的材料形成第二层。

公开(公告)号：US20120135302A1

公开(公告)日：2012-05-31

申请号：US13301020

申请日：2011-11-21

申请人： Tomokazu Yokoi ,  Takayuki Inoue ,  Makoto Furuno

发明人： Tomokazu Yokoi ,  Takayuki Inoue ,  Makoto Furuno

IPC分类号： H01M4/13 ,  H01L21/28 ,  H01M4/02 ,  H01L29/02

CPC分类号： H01L29/12 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/366 ,  H01M4/386

摘要： Provided are a semiconductor film including silicon microstructures formed at high density, and a manufacturing method thereof. Further, provided are a semiconductor film including silicon microstructures whose density is controlled, and a manufacturing method thereof Furthermore, a power storage device with improved charge-discharge capacity is provided. A manufacturing method in which a semiconductor film with a silicon layer including silicon structures is formed over a substrate with a metal surface is used. The thickness of a silicide layer formed by reaction between the metal and the silicon is controlled, so that the grain sizes of silicide grains formed at an interface between the silicide layer and the silicon layer are controlled and the shapes of the silicon structures are controlled. Such a semiconductor film can be applied to an electrode of a power storage device.

摘要翻译： 提供了包括以高密度形成的硅微结构的半导体膜及其制造方法。 此外，提供了包括其密度被控制的硅微结构的半导体膜及其制造方法。此外，提供了具有改善的充放电容量的蓄电装置。 使用其中在具有金属表面的基板上形成具有包括硅结构的硅层的半导体膜的制造方法。 控制由金属与硅之间的反应形成的硅化物层的厚度，从而控制在硅化物层和硅层之间的界面处形成的硅化物晶粒的晶粒尺寸，并且控制硅结构的形状。 这样的半导体膜可以应用于蓄电装置的电极。

公开(公告)号：US08946790B2

公开(公告)日：2015-02-03

申请号：US13488791

申请日：2012-06-05

申请人： Tomokazu Yokoi ,  Yasumasa Yamane

发明人： Tomokazu Yokoi ,  Yasumasa Yamane

IPC分类号： H01L21/20 ,  H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L21/02

CPC分类号： H01L29/78609 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02664 ,  H01L21/20 ,  H01L27/1225 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

摘要： A transistor which includes an oxide semiconductor and is capable of high-speed operation and a method of manufacturing the transistor. In addition, a highly reliable semiconductor device including the transistor and a method of manufacturing the semiconductor device. The semiconductor device includes an oxide semiconductor layer including a channel formation region, and a source and drain regions which are provided so that the channel formation region is interposed therebetween and have lower resistance than the channel formation region. The channel formation region and the source and drain regions each include a crystalline region.

摘要翻译： 包括氧化物半导体并且能够进行高速操作的晶体管以及晶体管的制造方法。 此外，包括晶体管的高可靠性半导体器件和制造半导体器件的方法。 半导体器件包括具有沟道形成区域的氧化物半导体层以及被设置为使得沟道形成区域介于其间并具有比沟道形成区域更低的电阻的源极和漏极区域。 沟道形成区域和源极区域和漏极区域各自包括结晶区域。

公开(公告)号：US08455044B2

公开(公告)日：2013-06-04

申请号：US13301020

申请日：2011-11-21

申请人： Tomokazu Yokoi ,  Takayuki Inoue ,  Makoto Furuno

发明人： Tomokazu Yokoi ,  Takayuki Inoue ,  Makoto Furuno

IPC分类号： B05D5/12

CPC分类号： H01L29/12 ,  H01M4/0428 ,  H01M4/134 ,  H01M4/366 ,  H01M4/386

摘要： Provided are a semiconductor film including silicon microstructures formed at high density, and a manufacturing method thereof. Further, provided are a semiconductor film including silicon microstructures whose density is controlled, and a manufacturing method thereof. Furthermore, a power storage device with improved charge-discharge capacity is provided. A manufacturing method in which a semiconductor film with a silicon layer including silicon structures is formed over a substrate with a metal surface is used. The thickness of a silicide layer formed by reaction between the metal and the silicon is controlled, so that the grain sizes of silicide grains formed at an interface between the silicide layer and the silicon layer are controlled and the shapes of the silicon structures are controlled. Such a semiconductor film can be applied to an electrode of a power storage device.

摘要翻译： 提供了包括以高密度形成的硅微结构的半导体膜及其制造方法。 此外，提供了包括其密度被控制的硅微结构的半导体膜及其制造方法。 此外，提供了具有改善的充放电容量的蓄电装置。 使用其中在具有金属表面的基板上形成具有包括硅结构的硅层的半导体膜的制造方法。 控制由金属与硅之间的反应形成的硅化物层的厚度，从而控制在硅化物层和硅层之间的界面处形成的硅化物晶粒的晶粒尺寸，并且控制硅结构的形状。 这样的半导体膜可以应用于蓄电装置的电极。

公开(公告)号：US08049215B2

公开(公告)日：2011-11-01

申请号：US12426983

申请日：2009-04-21

申请人： Yasuhiro Jinbo ,  Tomokazu Yokoi

发明人： Yasuhiro Jinbo ,  Tomokazu Yokoi

IPC分类号： H01L29/786

CPC分类号： H01L29/78696 ,  H01J37/32018 ,  H01J37/32091 ,  H01L29/78669 ,  H01L29/78678

摘要： A thin film transistor has a gate electrode; a gate insulating layer provided so as to cover the gate electrode layer; a pair of impurity semiconductor layers forming source and drain regions which is provided so that at least part of each of them overlaps the gate electrode layer and which are provided with a space therebetween; a microcrystalline semiconductor layer provided over the gate insulating layer in part of a channel length; a semiconductor layer provided over the gate insulating layer so as to cover at least the microcrystalline semiconductor layer; and an amorphous semiconductor layer provided between the semiconductor layer and the pair of impurity semiconductor layers. An impurity element which reduces the coordination number of silicon and generates dangling bonds is made to exist in the semiconductor layer.

摘要翻译： 薄膜晶体管具有栅电极; 设置为覆盖所述栅极电极层的栅极绝缘层; 形成源区和漏区的一对杂质半导体层，其被设置为使得它们的至少一部分与栅电极层重叠并且在它们之间设置有空间; 在沟道长度的一部分上设置在所述栅绝缘层上的微晶半导体层; 半导体层，设置在所述栅极绝缘层上以至少覆盖所述微晶半导体层; 以及设置在所述半导体层和所述一对杂质半导体层之间的非晶半导体层。 在半导体层中存在减少硅的配位数并产生悬挂键的杂质元素。

公开(公告)号：US08895388B2

公开(公告)日：2014-11-25

申请号：US11826229

申请日：2007-07-13

申请人： Tetsuya Kakehata ,  Tomokazu Yokoi

发明人： Tetsuya Kakehata ,  Tomokazu Yokoi

IPC分类号： H01L21/336 ,  H01L21/28 ,  H01L21/02 ,  H01L21/316 ,  H01L27/115 ,  H01L27/105 ,  H01L27/12 ,  H01L29/78 ,  H01L21/84

CPC分类号： H01L27/127 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/28273 ,  H01L21/31662 ,  H01L21/84 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11546 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1214 ,  H01L29/785

摘要： An object is to provide a technique for manufacturing an insulating layer with favorable withstand voltage. Another object is to provide a technique for manufacturing a semiconductor device having an insulating layer with favorable withstand voltage. By subjecting a semiconductor layer or semiconductor substrate mainly containing silicon to a high density plasma treatment, an insulating layer is formed on a surface of the semiconductor layer or a top surface of the semiconductor substrate. At this time, the high density plasma treatment is performed by switching a supply gas in the middle of the treatment from a gas containing a rare gas, oxygen, and hydrogen, to a gas containing a rare gas and oxygen.

摘要翻译： 本发明的目的是提供一种具有良好耐受电压的绝缘层的制造技术。 本发明的另一个目的是提供一种制造具有耐受电压良好的绝缘层的半导体器件的技术。 通过对主要含有硅的半导体层或半导体基板进行高密度等离子体处理，在半导体层的表面或半导体衬底的顶表面上形成绝缘层。 此时，通过将处理中间的供给气体从含有稀有气体，氧气和氢气的气体切换到含有稀有气体和氧气的气体，进行高密度等离子体处理。

公开(公告)号：US08802493B2

公开(公告)日：2014-08-12

申请号：US13604937

申请日：2012-09-06

申请人： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Sachiaki Tezuka ,  Tomokazu Yokoi ,  Yusuke Shino

发明人： Junichi Koezuka ,  Shinji Ohno ,  Yuichi Sato ,  Sachiaki Tezuka ,  Tomokazu Yokoi ,  Yusuke Shino

IPC分类号： H01L21/00

CPC分类号： H01L29/242 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/84 ,  H01L27/10873 ,  H01L27/1156 ,  H01L27/1203 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/7869

摘要： The contact resistance between an oxide semiconductor film and a metal film is reduced. A transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device capable of high-speed operation is provided. In a transistor that uses an oxide semiconductor film, the oxide semiconductor film is subjected to nitrogen plasma treatment. Thus, part of oxygen included in the oxide semiconductor film is replaced with nitrogen, so that an oxynitride region is formed. A metal film is formed in contact with the oxynitride region. The oxynitride region has lower resistance than the other region of the oxide semiconductor film. In addition, the oxynitride region is unlikely to form high-resistance metal oxide at the interface with the contacting metal film.

摘要翻译： 氧化物半导体膜与金属膜之间的接触电阻降低。 提供了使用氧化物半导体膜并且具有优异的导通状态特性的晶体管。 提供能够进行高速运转的半导体装置。 在使用氧化物半导体膜的晶体管中，对氧化物半导体膜进行氮等离子体处理。 因此，氧化物半导体膜中包含的部分氧被氮代替，从而形成氧氮化物区。 形成与氧氮化物区域接触的金属膜。 氧氮化物区域的电阻比氧化物半导体膜的其他区域低。 此外，氧氮化物区域不可能在与接触金属膜的界面处形成高电阻金属氧化物。