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公开(公告)号：US5018939A
公开(公告)日：1991-05-28
申请号：US313344
申请日：1989-02-21
CPC分类号： B21D43/20 , B65G59/04 , H01F7/0247 , Y10S271/901
摘要： An apparatus for separating piled iron sheets one by one has a plurality of magnets arranged vertically with the same magnetic poles thereof facing each other. Magnetic fluxes generated from the magnets react with each other at a position between the magnets and flow horizontally and then vertically, with the result that opposite, vertically separating forces act on two superposed iron sheets.
摘要翻译： 一个一个地分离堆积的铁片的设备具有垂直排列的多个磁体，其中相同磁极彼此面对。 从磁体产生的磁通在磁体之间的位置处相互反应，并且水平且垂直地流动，结果是相反的垂直分离力作用在两个重叠的铁片上。
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公开(公告)号：US4784562A
公开(公告)日：1988-11-15
申请号：US883918
申请日：1986-07-10
CPC分类号： B65G47/902 , B21D43/105 , B30B15/30 , Y10S414/13
摘要： An apparatus for carrying a workpiece to and out of a press is provided with at least a pair of workpiece carrying mechanism assemblies which are driven and controlled independently, and each of the mechanism assemblies includes at least one attachment for attracting the workpiece.
摘要翻译： 一种用于将工件运送到冲压机的装置设置有至少一对被独立地驱动和控制的工件承载机构组件，并且每个机构组件包括至少一个用于吸附工件的连接件。
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公开(公告)号：US5010226A
公开(公告)日：1991-04-23
申请号：US403400
申请日：1989-09-06
申请人： Kazuhiro Sato , Tomomi Kishi , Koji Umeda , Yasushi Uchida , Masahiko Takeuchi
发明人： Kazuhiro Sato , Tomomi Kishi , Koji Umeda , Yasushi Uchida , Masahiko Takeuchi
CPC分类号： B23K37/0443 , B23K11/067
摘要： An automatic seam welding apparatus for fuel tanks comprises a jig for holding two workpieces disposed one above the other to form a fuel tank, a pair of roller electrodes vertically arranged for nipping and welding the overlapping peripheral flange portion of the workpieces, and a robot assembly rotatably supporting the jig and controlling the horizontal and vertical positions and the inclination of the jig held workpieces relative to the electrodes for welding peripheral flange portions that are irregular with high quality welds. The jig is easily detachable from the robot to permit many different shaped tanks to be welded by the same apparatus.
摘要翻译： 一种用于燃料箱的自动缝焊装置，包括：一夹具，用于容纳两个彼此重叠设置的工件，以形成燃料箱;一对垂直布置用于夹紧和焊接工件的重叠周边凸缘部分的滚子电极;以及机器人组件 可旋转地支撑夹具并且控制夹具保持的工件相对于电极的水平和垂直位置和倾斜度，用于焊接不规则的高质量焊缝的周边凸缘部分。 该夹具容易从机器人拆卸，以允许许多不同形状的罐由相同的装置焊接。
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公开(公告)号：US08551908B2
公开(公告)日：2013-10-08
申请号：US13001683
申请日：2009-06-26
申请人： Akemi Satou , Masahiko Takeuchi , Keizo Hiraku , Yusuke Kawamura , Takahiro Fujiwara , Tadashi Suzuki , Naoki Takahashi
发明人： Akemi Satou , Masahiko Takeuchi , Keizo Hiraku , Yusuke Kawamura , Takahiro Fujiwara , Tadashi Suzuki , Naoki Takahashi
CPC分类号： B01J23/002 , B01D53/945 , B01D2255/1021 , B01D2255/1023 , B01D2255/1025 , B01D2255/206 , B01D2255/20715 , B01D2255/9022 , B01D2255/908 , B01D2257/304 , B01J23/63 , B01J23/83 , B01J23/894 , B01J35/04 , B01J37/0244 , B01J2523/00 , Y02T10/22 , B01J2523/3712 , B01J2523/3718 , B01J2523/48 , B01J2523/828 , B01J2523/824 , B01J2523/822
摘要： An exhaust gas purification catalyst includes: a lower catalyst layer that contains a ceria-zirconia mixed oxide having 50 to 70 mass % of CeO2 and 5 mass % or more of Pr2O3 and carries at least one of Pt and Pd; and an upper catalyst layer that contains at least zirconia and carries at least Rh, wherein the total amount of CeO2 per liter of the carrier base is 15 to 30 g. Because the amount of CeO2 is small, formation of H2S is suppressed and a high capability of adsorbing and releasing oxygen is brought out in spite of the small amount of CeO2.
摘要翻译： 废气净化催化剂包括：含有氧化铈 - 氧化锆混合氧化物的下部催化剂层，其具有50〜70质量％的CeO 2和5质量％以上的Pr 2 O 3，并携带Pt和Pd中的至少一种; 和至少含有氧化锆并至少含有Rh的上部催化剂层，其中每升载体碱的CeO 2的总量为15〜30g。 由于CeO 2的量少，因此抑制了H 2 S的形成，并且尽管CeO 2的量少，但是吸附和释放氧的能力也很高。
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5.发明授权Photomask including auxiliary mark area, semiconductor device and manufacturing method thereof 有权包括辅助标记区域的光掩模，半导体器件及其制造方法公开(公告)号：US06849957B2
公开(公告)日：2005-02-01
申请号：US09725853
申请日：2000-11-30
IPC分类号： H01L21/66 , G03F9/00 , H01L21/027 , H01L21/822 , H01L23/544 , H01L27/04
CPC分类号： G03F9/7084 , G03F1/42 , G03F9/7076 , H01L23/544 , H01L2223/54406 , H01L2223/5442 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device enabling precise and accurate measurement of an inspection mark in a simple manner is obtained. The semiconductor device includes a device forming area and a dicing line area arranged to surround the device forming area on a semiconductor substrate. In the dicing line area, first and second registration marks formed in different shots are provided, and the first and second registration marks include auxiliary marks for identifying the first and second registration marks.
摘要翻译： 获得能够以简单的方式精确而准确地测量检查标记的半导体器件。 半导体器件包括设置成围绕半导体衬底上的器件形成区域的器件形成区域和切割线区域。 在切割线区域中，设置以不同镜头形成的第一和第二对准标记，并且第一和第二对准标记包括用于识别第一和第二对准标记的辅助标记。
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公开(公告)号：US06521933B2
公开(公告)日：2003-02-18
申请号：US09725852
申请日：2000-11-30
IPC分类号： H01L27108
CPC分类号： H01L27/10894 , H01L27/10852
摘要： In the drawn-out interconnection structure of the present invention, a storage node (SN) groove extending from a region, and a groove-shape drawn-out electrode is formed on the inner wall of storage node (SN) groove. An extended pad electrode portion extending from groove-shape drawn-out electrode is provided above storage node (SN) groove. Also provided is a contact plug that penetrates through extended pad electrode portion and that connects aluminum interconnection and extended pad electrode portion in a layer above extended pad electrode portion. With this arrangement, the structure of an interconnection drawn from an electrode of a semiconductor device can be obtained which allows the production of a cell transistor TEG capable of performing a reliable and stable measurement of the cell transistor characteristics.
摘要翻译： 在本发明的拉出互连结构中，在存储节点（SN）槽的内壁上形成有从区域延伸的存储节点（SN）槽和槽形引出电极。 从槽形拉出电极延伸的延伸焊盘电极部分设置在存储节点（SN）槽的上方。 还提供一种接触插塞，其穿过延伸的焊盘电极部分并且将铝互连和延伸焊盘电极部分连接在延伸的焊盘电极部分上方的层中。 通过这种布置，可以获得从半导体器件的电极拉出的互连结构，其允许制造能够执行电池晶体管特性的可靠和稳定测量的电池晶体管TEG。
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7.发明授权公开(公告)号：US07363858B2
公开(公告)日：2008-04-29
申请号：US11079337
申请日：2005-03-15
申请人： Kenji Edamitsu , Masahiko Takeuchi
发明人： Kenji Edamitsu , Masahiko Takeuchi
IPC分类号： B41F27/12
CPC分类号： B41F27/1206 , B41P2227/62
摘要： A printing apparatus includes a printing plate feeder for feeding printing plates to a first plate cylinder. The printing plate feeder has a pair of transport rollers acting as a leveling roller and a driven roller. The leveling roller is fixed to a leveling roller rotary shaft extending parallel to a rotational axis of the first plate cylinder, and is opposed to middle and opposite end regions of the first plate cylinder. The leveling roller rotary shaft is connected to a driving device, a one-way clutch for permitting rotation only in a transport direction of the printing plates, and a torque transmission clutch acting as a loading device for applying a load to rotation in a direction opposite to the transport direction of the printing plates.
摘要翻译： 印刷装置包括用于将印版供给到第一印版滚筒的印版进给器。 印版进纸器具有一对作为调平辊和从动辊的输送辊。 调平辊被固定到平行于第一印版滚筒的旋转轴线延伸的调平辊旋转轴，并与第一印版滚筒的中间和相对端区相对。 调平辊旋转轴连接到驱动装置，单向离合器仅允许在印版的传送方向上旋转;以及扭矩传递离合器，用作加载装置，用于沿相反方向旋转载荷 到印版的传送方向。
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公开(公告)号：US06924192B2
公开(公告)日：2005-08-02
申请号：US10697316
申请日：2003-10-31
申请人： Masahiko Takeuchi
发明人： Masahiko Takeuchi
IPC分类号： H01L23/522 , H01L21/02 , H01L21/768 , H01L21/8242 , H01L21/8247 , H01L27/04 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L28/65 , H01L21/7687 , H01L21/76877 , H01L27/105 , H01L27/10811 , H01L27/10852 , H01L27/10885 , H01L27/10888 , H01L27/10894 , H01L27/10897 , H01L28/91
摘要： A technique is provided which makes it possible to achieve both of a reduction in contact resistance in a memory device and a reduction in contact resistance in a logic device even when oxidation is performed during formation of dielectric films of capacitors. Conductive barrier layers (82) are provided in the top ends of contact plugs (83b) electrically connected to ones of source/drain regions (59). Lower electrodes (70) of capacitors (73) are formed in contact with the conductive barrier layers (82) of the contact plugs (83b) and then dielectric films (71) and upper electrodes (72) of the capacitors (73) are sequentially formed. In the logic region, contact plugs (25) are formed in an upper layer so that they are in contact respectively with contact plugs (33) electrically connected to source/drain regions (9).
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公开(公告)号：US06765256B2
公开(公告)日：2004-07-20
申请号：US10370657
申请日：2003-02-24
申请人： Masahiko Takeuchi , Takashi Dokan
发明人： Masahiko Takeuchi , Takashi Dokan
IPC分类号： H01L27108
CPC分类号： H01L27/10894 , H01L27/10814 , H01L27/10882
摘要： A semiconductor device includes: lower storage node electrodes provided on a main surface of a silicon substrate; a dielectric film provided on the lower storage node electrodes; an upper cell plate electrode provided on the dielectric film; and an interlayer insulating film covering the upper cell plate electrode. The upper cell plate electrode contains ruthenium. The interlayer insulating film has a contact hole reaching the upper cell plate electrode. The contact hole is provided so that the distance between the main surface of the silicon substrate and the bottom face of the contact hole is not less than the distance between the main surface of the silicon substrate and the bottom face of the upper cell plate electrode. A semiconductor device is provided wherein contact defects in the upper electrode and the generation of an area penalty are prevented.
摘要翻译： 半导体器件包括：设置在硅衬底的主表面上的下部存储节点电极; 设置在下部存储节点电极上的电介质膜; 设置在电介质膜上的上电池板电极; 以及覆盖上电池板电极的层间绝缘膜。 上电池板电极含有钌。 层间绝缘膜具有到达上电池板电极的接触孔。 接触孔设置成使得硅衬底的主表面和接触孔的底面之间的距离不小于硅衬底的主表面和上电池板电极的底面之间的距离。 提供一种半导体器件，其中防止上电极中的接触缺陷和产生区域损失。
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10.发明授权Semiconductor device including retrograde well structure with suppressed substrate bias effects 失效包括具有抑制衬底偏置效应的逆行井结构的半导体器件
公开(公告)号：US5763921A
公开(公告)日：1998-06-09
申请号：US645700
申请日：1996-05-14
IPC分类号： H01L21/76 , H01L21/8238 , H01L27/08 , H01L27/092 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L27/0928 , H01L21/823807
摘要： An n well and a p well are formed in a silicon substrate. The n well has n type impurity concentration peaks and a p type impurity concentration peak. The p well has p type concentration peaks. The impurity concentration peaks serving as channel stopper regions for isolating elements exist only in proximity to the lower surface of an isolation oxide film but not in element regions.
摘要翻译： 在硅衬底中形成n阱和p阱。 n阱具有n型杂质浓度峰和p型杂质浓度峰。 p阱具有p型浓度峰。 作为用于隔离元件的通道阻挡区域的杂质浓度峰值仅存在于隔离氧化膜的下表面附近，而不存在于元件区域中。
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