公开(公告)号：US06830949B2

公开(公告)日：2004-12-14

申请号：US10258128

申请日：2002-10-21

申请人： Masanobu Senda ,  Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Shizuyo Asami

发明人： Masanobu Senda ,  Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Shizuyo Asami

IPC分类号： H01L2100

CPC分类号： C30B23/02 ,  C23C14/0036 ,  C23C14/0617 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/0062

摘要： A preferred condition for forming a Group III nitride compound semiconductor layer on a substrate by a sputtering method is proposed. When a first Group III nitride compound semiconductor layer is formed on a substrate by a sputtering method, an initial voltage of a sputtering apparatus is selected to be not higher than 110% of a sputtering voltage.

摘要翻译： 提出了通过溅射法在基板上形成III族氮化物化合物半导体层的优选条件。 当通过溅射法在基板上形成第一III族氮化物化合物半导体层时，溅射装置的初始电压被选择为不高于溅射电压的110％。

公开(公告)号：US06713789B1

公开(公告)日：2004-03-30

申请号：US09516177

申请日：2000-03-01

申请人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Masanobu Senda ,  Shinya Asami

发明人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Masanobu Senda ,  Shinya Asami

IPC分类号： H01L3300

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007

摘要： A first group III nitride compound layer, which is formed on a substrate by a method not using metal organic compounds as raw materials, is heated in an atmosphere of a mixture gas containing a hydrogen or nitrogen gas and an ammonia gas, so that the crystallinity of a second group III nitride compound semiconductor layer formed on the first group III nitride compound layer is improved. When the first group III nitride compound layer is formed on a substrate by a sputtering method, the thickness of the first group III nitride compound layer is set to be in a range of from 50 Å to 3000 Å.

公开(公告)号：US06426512B1

公开(公告)日：2002-07-30

申请号：US09518724

申请日：2000-03-03

申请人： Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Hiroshi Watanabe ,  Shizuyo Asami ,  Shinya Asami

发明人： Jun Ito ,  Toshiaki Chiyo ,  Naoki Shibata ,  Hiroshi Watanabe ,  Shizuyo Asami ,  Shinya Asami

IPC分类号： H01L2906

CPC分类号： H01L33/007 ,  H01L33/0075

摘要： An undercoat layer inclusive of a metal nitride layer is formed on a substrate. Group III nitride compound semiconductor layers are formed on the undercoat layer continuously.

摘要翻译： 在基板上形成包含金属氮化物层的底涂层。 在内涂层上连续形成III族氮化物化合物半导体层。

公开(公告)号：US06593016B1

公开(公告)日：2003-07-15

申请号：US09606081

申请日：2000-06-29

申请人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

发明人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

IPC分类号： H01L2900

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/32 ,  H01S5/32341 ,  Y10T428/265

摘要： A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 &mgr;m and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 sec. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 &mgr;m is grown at a temperature of from 1000 to 1180° C. on a sapphire substrate having a surface nitride layer having a thickness of not larger than 300 Å.

摘要翻译： III族氮化物化合物半导体器件具有在衬底上形成的衬底和AlN单晶层。 AlN单晶层的厚度为0.5〜3μm，具有大致平坦的表面。 AlN单晶层的X射线摇摆曲线的半值宽度不大于50秒。 在另一种器件中，在具有厚度不大于300的表面氮化物层的蓝宝石衬底上，在1000至1180℃的温度下生长具有0.01至3.2μm厚度的III族氮化物化合物半导体层 一个。

公开(公告)号：US06335217B1

公开(公告)日：2002-01-01

申请号：US09525425

申请日：2000-03-14

申请人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

发明人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

IPC分类号： H01L2100

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/405 ,  H01L33/46

摘要： A GaN type semiconductor layer having a structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.

摘要翻译： 提供具有结构的GaN型半导体层，其具有与GaN类半导体层相对的表面的由Ti构成的衬底。

公开(公告)号：US06982435B2

公开(公告)日：2006-01-03

申请号：US09985927

申请日：2001-11-06

申请人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Shinya Asami

发明人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Shinya Asami

IPC分类号： H01L31/0256

CPC分类号： H01L33/007 ,  H01L21/02381 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639

摘要： A group III nitride compound semiconductor device is produced according to the following manner. A separation layer made of a material which prevents group III nitride compound semiconductors from being grown thereon is formed on a substrate. Group III nitride compound semiconductors is grown on a surface of the substrate uncovered with the separation layer while keeping the uncovered substrate surface separated by the separation layer.

公开(公告)号：US06939733B2

公开(公告)日：2005-09-06

申请号：US10725380

申请日：2003-12-03

申请人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Masanobu Senda ,  Shinya Asami

发明人： Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo ,  Shizuyo Asami ,  Hiroshi Watanabe ,  Masanobu Senda ,  Shinya Asami

IPC分类号： C30B25/02 ,  H01L21/205 ,  H01L33/00 ,  H01L21/00

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007

摘要： A first group III nitride compound layer, which is formed on a substrate by a method not using metal organic compounds as raw materials, is heated in an atmosphere of a mixture gas containing a hydrogen or nitrogen gas and an ammonia gas, so that the crystallinity of a second group III nitride compound semiconductor layer formed on the first group III nitride compound layer is improved. When the first group III nitride compound layer is formed on a substrate by a sputtering method, the thickness of the first group III nitride compound layer is set to be in a range of from 50 Å to 3000 Å.

摘要翻译： 通过不使用金属有机化合物作为原料的方法在基板上形成的第一III族氮化物化合物层在含有氢或氮气和氨气的混合气体的气氛中加热，使得结晶度 形成在第一III族氮化物层上的第二III族氮化物化合物半导体层。 当通过溅射法在基板上形成第一III族氮化物化合物层时，第一III族氮化物化合物层的厚度被设定在从50到3000的范围内。

公开(公告)号：US06589808B2

公开(公告)日：2003-07-08

申请号：US09972898

申请日：2001-10-10

申请人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

发明人： Toshiaki Chiyo ,  Shizuyo Noiri ,  Naoki Shibata ,  Jun Ito

IPC分类号： H01L2100

CPC分类号： H01L33/12 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/405 ,  H01L33/46

摘要： A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.

公开(公告)号：US06918961B2

公开(公告)日：2005-07-19

申请号：US10421855

申请日：2003-04-24

申请人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

发明人： Toshiaki Chiyo ,  Naoki Shibata ,  Masanobu Senda ,  Jun Ito ,  Shizuyo Asami ,  Shinya Asami ,  Hiroshi Watanabe

IPC分类号： C30B25/02 ,  H01L21/20 ,  H01L21/203 ,  H01L21/205 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323 ,  C30B25/12 ,  C30B25/14

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/32 ,  H01S5/32341 ,  Y10T428/265

摘要： A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 μm and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 sec. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 μm is grown at a temperature of from 1000 to 1180° C. on a sapphire substrate having a surface nitride layer having a thickness of not larger than 300 Å.

摘要翻译： III族氮化物化合物半导体器件具有在衬底上形成的衬底和AlN单晶层。 AlN单晶层的厚度为0.5〜3μm，具有大致平坦的表面。 AlN单晶层的X射线摇摆曲线的半值宽度不大于50秒。 在另一种器件中，在具有厚度不大于300的表面氮化物层的蓝宝石衬底上，在1000至1180℃的温度下生长具有0.01至3.2μm厚度的III族氮化物化合物半导体层 一个。

公开(公告)号：US06875629B2

公开(公告)日：2005-04-05

申请号：US10479590

申请日：2002-06-03

申请人： Masanobu Senda ,  Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo

发明人： Masanobu Senda ,  Naoki Shibata ,  Jun Ito ,  Toshiaki Chiyo

IPC分类号： C23C4/02 ,  C23C4/18 ,  H01L21/20 ,  H01L29/20 ,  H01L33/32 ,  H01L21/00

CPC分类号： C30B25/18 ,  C23C4/02 ,  C23C4/18 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/02458 ,  H01L21/02472 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  Y10S257/918

摘要： A separator layer of Ti is formed on an auxiliary substrate of sapphire or the like. An undercoat layer of TiN is formed on the separator layer. The undercoat layer is provided so that a Group III nitride compound semiconductor layer can be grown with good crystallinity on the undercoat layer. TiN is sprayed on the undercoat layer to form a thermal spray depositing layer. Then, the separator layer is chemically etched to reveal the undercoat layer. Then, a Group III nitride compound semiconductor layer is grown on a surface of the undercoat layer.

摘要翻译： 在蓝宝石等的辅助基板上形成有Ti的隔离层。 在隔离层上形成TiN的底涂层。 提供底涂层，使得能够在底涂层上生长具有良好结晶性的III族氮化物化合物半导体层。 将TiN喷涂在底涂层上以形成热喷涂沉积层。 然后，隔离层被化学蚀刻以露出底涂层。 然后，在底涂层的表面上生长III族氮化物化合物半导体层。