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    Floor panel structure of vehicle body
    1.
    发明申请
    Floor panel structure of vehicle body 审中-公开
    车体地板结构

    公开(公告)号：US20050264041A1

    公开(公告)日：2005-12-01

    申请号：US11125270

    申请日：2005-05-10

    申请人： Tsuyoshi Sugihara ,  Seiichi Nakabayashi ,  Shigefumi Hirabayashi

    发明人： Tsuyoshi Sugihara ,  Seiichi Nakabayashi ,  Shigefumi Hirabayashi

    IPC分类号： B60R13/08 ,  B62D21/15 ,  B62D25/20

    CPC分类号： B62D25/20 ,  B60R13/083 ,  B62D25/2036

    摘要： The panel area is formed in the substantially rectangular shape with sides thereof which extend substantially straight, by being enclosed by the frame member and the vibration restraint portion to control a vibration area, such as beads and the bent line portion, and the high-rigidity area and the low-rigidity area are formed within the panel area. Accordingly, the vibration energy can be increased at the low-rigidity area properly. As a result, the vibration energy transmitted from the frame members to the floor panel can be reduced, and thereby the acoustic emission generated from the floor panel can be reduced.

    摘要翻译： 面板区域形成为大致矩形形状，其侧面通过被框架构件和振动抑制部分包围而延伸大致直线，以控制诸如小珠和弯曲线部分的振动区域，并且高刚度 区域和低刚度区域形成在面板区域内。 因此，可以适当地在低刚性区域增加振动能量。 结果，可以减少从框架构件传递到地板面板的振动能量，从而可以减少从地板镶板产生的声发射。

    Floor panel structure of vehicle body
    2.
    发明授权
    Floor panel structure of vehicle body 失效
    车体地板结构

    公开(公告)号：US07243984B2

    公开(公告)日：2007-07-17

    申请号：US11126149

    申请日：2005-05-11

    申请人： Tsuyoshi Sugihara ,  Seiichi Nakabayashi ,  Shigefumi Hirabayashi

    发明人： Tsuyoshi Sugihara ,  Seiichi Nakabayashi ,  Shigefumi Hirabayashi

    IPC分类号： B62D25/20

    CPC分类号： B62D25/20 ,  B60R13/083 ,  B62D25/2036

    摘要： In a floor panel structure of a vehicle body in which a floor of an automotive vehicle is formed by a floor panel coupled to a plurality of frame members extending in substantially longitudinal and width directions of the vehicle, there are provided a panel area formed by being enclosed at least by the frame members, a heavy-weight area located at a substantially central portion of the panel area, and a peripheral area located substantially around the heavy-weight area, wherein the heavy-weight area is configured so as to be heavier than the peripheral area. Accordingly, the vibration energy transmitted from the frame members to the floor panel can be reduced and thereby the acoustic emission generated from the floor panel can be reduced.

    摘要翻译： 在车身的地板面板结构中，其中机动车辆的地板由与在车辆的大致纵向和宽度方向上延伸的多个框架构件联接的地板镶板形成，提供了一种面板区域， 至少被框架构件封闭，位于面板区域的基本中心部分的重型区域和基本上围绕重型区域设置的周边区域，其中重型区域被配置为更重 比外围区域。 因此，可以减少从框架构件传递到地板面板的振动能量，从而可以减少从地板镶板产生的声发射。

    Floor panel structure of vehicle body
    3.
    发明申请
    Floor panel structure of vehicle body 失效
    车体地板结构

    公开(公告)号：US20050285432A1

    公开(公告)日：2005-12-29

    申请号：US11126149

    申请日：2005-05-11

    申请人： Tsuyoshi Sugihara ,  Seiichi Nakabayashi ,  Shigefumi Hirabayashi

    发明人： Tsuyoshi Sugihara ,  Seiichi Nakabayashi ,  Shigefumi Hirabayashi

    IPC分类号： B60R13/08 ,  B62D25/20

    CPC分类号： B62D25/20 ,  B60R13/083 ,  B62D25/2036

    摘要： In a floor panel structure of a vehicle body in which a floor of an automotive vehicle is formed by a floor panel coupled to a plurality of frame members extending in substantially longitudinal and width directions of the vehicle, there are provided a panel area formed by being enclosed at least by the frame members, a heavy-weight area located at a substantially central portion of the panel area, and a peripheral area located substantially around the heavy-weight area, wherein the heavy-weight area is configured so as to be heavier than the peripheral area. Accordingly, the vibration energy transmitted from the frame members to the floor panel can be reduced and thereby the acoustic emission generated from the floor panel can be reduced.

    摘要翻译： 在车身的地板面板结构中，其中机动车辆的地板由与在车辆的大致纵向和宽度方向上延伸的多个框架构件联接的地板镶板形成，提供了一种面板区域， 至少被框架构件封闭，位于面板区域的基本中心部分的重型区域和基本上围绕重型区域设置的周边区域，其中重型区域被配置为更重 比外围区域。 因此，可以减少从框架构件传递到地板面板的振动能量，从而可以减少从地板镶板产生的声发射。

    Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device
    5.
    发明申请
    Method of fabricating a semiconductor device with a trench isolation structure and resulting semiconductor device 有权
    制造具有沟槽隔离结构和所得半导体器件的半导体器件的方法

    公开(公告)号：US20070269949A1

    公开(公告)日：2007-11-22

    申请号：US11822467

    申请日：2007-07-06

    申请人： Jun Sumino ,  Satoshi Shimizu ,  Tsuyoshi Sugihara

    发明人： Jun Sumino ,  Satoshi Shimizu ,  Tsuyoshi Sugihara

    IPC分类号： H01L21/336

    CPC分类号： H01L27/10873 ,  H01L21/76229 ,  H01L21/76232 ,  H01L21/76235 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/10894

    摘要： The present fabrication method includes the steps of: providing a nitride film in a main surface of a semiconductor substrate; providing an upper trench, with the nitride film used as a mask; filling the upper trench with an oxide film introduced therein; removing the oxide film to expose at least a portion of a bottom of the upper trench and allowing a remainder of the oxide film to serve as a sidewall; providing a lower trench in a bottom of the upper trench, with the sidewall used as a mask; and with the upper trench having the sidewall remaining therein, providing an oxide film in the upper trench and the lower trench. This can provide a semiconductor device fabrication method and a semiconductor device preventing a contact from penetrating the device in an interconnection process.

    摘要翻译： 本发明的制造方法包括以下步骤：在半导体衬底的主表面上设置氮化物膜; 提供上部沟槽，其中所述氮化物膜用作掩模; 用引入其中的氧化膜填充上沟槽; 去除所述氧化物膜以暴露所述上部沟槽的底部的至少一部分并且允许所述氧化膜的其余部分用作侧壁; 在所述上沟槽的底部提供下沟槽，所述侧壁用作掩模; 并且具有保留其侧壁的上沟槽，在上沟槽和下沟槽中提供氧化膜。 这可以提供半导体器件制造方法和半导体器件，以防止接触在互连过程中穿透器件。

    Lubricating structure of planetary gear mechanism
    6.
    发明申请
    Lubricating structure of planetary gear mechanism 有权
    行星齿轮机构的润滑结构

    公开(公告)号：US20060065488A1

    公开(公告)日：2006-03-30

    申请号：US11233863

    申请日：2005-09-23

    申请人： Tsuyoshi Sugihara ,  Takamitsu Niibune ,  Tooru Koyama

    发明人： Tsuyoshi Sugihara ,  Takamitsu Niibune ,  Tooru Koyama

    IPC分类号： F16H57/04

    CPC分类号： F16H57/0482

    摘要： There is provided a lubricating structure of a planetary gear mechanism which can simplify the outer shape of an introducing section formed by an oil catch plate, for introducing lubricating oil, and ensure a high degree of design freedom. In a double pinion type planetary gear mechanism, the distance from the axis of a carrier to the outermost edge of an opening in the direction of the carrier's diameter in an lubricating oil introducing hole formed in an outer diameter side pinion shaft and the distance from the axis of the carrier to the outermost edge of an opening in the direction of the carrier's diameter in an lubricating oil introducing hole formed in an inner diameter side pinion shaft are equal to each other. Therefore, lubricating oil can be supplied to the inner diameter side pinion shaft through the introducing section irrespective of the amount of lubricating oil that can be supplied to the outer diameter side pinion shaft. Also, the shape of a centrifugal cancel piston as the oil catch plate forming the introducing section can be simplified to increase the degree of design freedom.

    摘要翻译： 提供了一种行星齿轮机构的润滑结构，其可以简化由止油板形成的导入部的外形，用于引入润滑油，并确保高度的设计自由度。 在双小齿轮型行星齿轮机构中，形成在外径侧小齿轮轴上的润滑油导入孔中的从载体轴线到开口的最外边缘在载体直径方向上的距离， 在形成在内径侧小齿轮轴上的润滑油导入孔中，载体的轴线与开口方向上的载体直径方向的最外边缘相等。 因此，无论可以向外径侧小齿轮轴供给的润滑油的量如何，也可以通过导入部向内径侧小齿轮轴供给润滑油。 此外，作为形成引入部的油捕获板的离心取消活塞的形状可以被简化以增加设计自由度。

    Semiconductor device and method of manufacturing the same
    7.
    发明授权
    Semiconductor device and method of manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US06974999B2

    公开(公告)日：2005-12-13

    申请号：US10265253

    申请日：2002-10-07

    申请人： Tsuyoshi Sugihara

    发明人： Tsuyoshi Sugihara

    IPC分类号： H01L21/28 ,  H01L21/265 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8239 ,  H01L21/8247 ,  H01L27/088 ,  H01L27/10 ,  H01L27/115 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76

    CPC分类号： H01L29/6659 ,  H01L21/823418 ,  H01L21/823443 ,  H01L21/823481 ,  H01L27/1052 ,  H01L29/665

    摘要： It is an object to suppress a change in a characteristic of a semiconductor device with a removal of a hard mask while making the most of an advantage of a gate electrode formed by using the hard mask. A gate electrode (3) is formed by etching using a hard mask as a mask and the hard mask remains on an upper surface of the gate electrode (3) at a subsequent step. In the meantime, the upper surface of the gate electrode (3) can be therefore prevented from being unnecessarily etched. The hard mask is removed after ion implantation for forming a source-drain region. Consequently, the influence of the removal of the hard mask on a characteristic of a semiconductor device can be suppressed. In that case, moreover, a surface of a side wall (4) is also etched by a thickness of (d) so that an exposure width of an upper surface of the source-drain region is increased. After the removal of the hard mask, it is easy to salicide the gate electrode (3) and to form a contact on the gate electrode (3).

    摘要翻译： 本发明的目的是通过去除硬掩模来抑制半导体器件的特性变化，同时充分利用通过使用硬掩模形成的栅电极的优点。 通过使用硬掩模作为掩模的蚀刻形成栅电极（3），并且在随后的步骤中硬掩模保留在栅电极（3）的上表面上。 同时，可以防止栅电极（3）的上表面被不必要地蚀刻。 在离子注入之后去除硬掩模以形成源 - 漏区。 因此，可以抑制去除硬掩模对半导体器件的特性的影响。 此外，在这种情况下，侧壁（4）的表面也被蚀刻（d）的厚度，使得源极 - 漏极区域的上表面的曝光宽度增加。 在去除硬掩模之后，容易对栅电极（3）进行自对准硅化，并在栅电极（3）上形成接触。

    Semi-conductor device with test element group for evaluation of interlayer dielectric and process for producing the same
    8.
    发明授权
    Semi-conductor device with test element group for evaluation of interlayer dielectric and process for producing the same 有权
    具有用于评估层间电介质的测试元件组的半导体器件及其制造方法

    公开(公告)号：US06414334B2

    公开(公告)日：2002-07-02

    申请号：US09852645

    申请日：2001-05-11

    申请人： Tsuyoshi Sugihara ,  Satoshi Shimizu

    发明人： Tsuyoshi Sugihara ,  Satoshi Shimizu

    IPC分类号： H01L2940

    CPC分类号： H01L22/34

    摘要： A semiconductor device 10 with Test Element Group (TEG) for estimating an interlayer dielectric includes a memory cell array. The memory cell array includes a semiconductor substrate 1, and a floating gate 2, an interlayer dielectric 3, and a control gate 4, all formed on the substrate 1 in this order. The TEG has the memory cell array similar to semiconductor device subject to estimation for the interlayer dielectric 3. The floating gate 2 has an electrode 5 for estimating the interlayer dielectric 3 provided on at least one side against an elongated direction of the memory cell array.

    摘要翻译： 具有用于估计层间电介质的测试元件组（TEG）的半导体器件10包括存储单元阵列。 存储单元阵列包括依次形成在基板1上的半导体基板1，浮置栅极2，层间电介质3和控制栅极4。 TEG具有类似于半导体器件的存储单元阵列，可以估计层间电介质3.浮置栅极2具有用于估计设置在至少一侧的层间电介质3的电极5，用于抵抗存储单元阵列的细长方向。