公开(公告)号：US20200062787A1

公开(公告)日：2020-02-27

申请号：US16547468

申请日：2019-08-21

Applicant: Versum Materials US, LLC

Inventor： Robert G. Ridgeway ,  Raymond N. Vrtis ,  Xinjian Lei ,  Madhukar B. Rao ,  Steven Gerard Mayorga ,  Neil Osterwalder ,  Manchao Xiao ,  Meiliang Wang

IPC: C07F7/08 ,  B01D3/00

Abstract: A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RnSiR14−n wherein R is selected a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group; R1 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C3 to C10 cyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.

公开(公告)号：US10283350B2

公开(公告)日：2019-05-07

申请号：US15976028

申请日：2018-05-10

Applicant: VERSUM MATERIALS US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC: C07F7/10 ,  H01L21/02 ,  C09D1/00 ,  C07F7/02 ,  C23C16/18 ,  C23C16/40 ,  C23C16/455 ,  C23C16/46 ,  C09D7/20 ,  C01B33/021 ,  C01B33/12 ,  C23C16/34 ,  C01B21/068 ,  C01B21/082

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US20170183502A1

公开(公告)日：2017-06-29

申请号：US15461999

申请日：2017-03-17

Applicant: VERSUM MATERIALS US, LLC

Inventor： Steven Gerard Mayorga ,  Heather Regina Bowen ,  Xinjian Lei ,  Manchao Xiao ,  Haripin Chandra ,  Anupama Mallikarjunan ,  Ronald Martin Pearlstein

IPC: C09D1/00 ,  C01B33/021 ,  C01B33/12 ,  C23C16/455 ,  C01B21/082 ,  C07F7/02 ,  C23C16/40 ,  H01L21/02 ,  C01B21/068

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US20180294152A1

公开(公告)日：2018-10-11

申请号：US15976028

申请日：2018-05-10

Applicant: VERSUM MATERIALS US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/34 ,  C09D7/20 ,  C07F7/10 ,  C01B33/12 ,  C01B33/021 ,  C09D1/00

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US10077364B2

公开(公告)日：2018-09-18

申请号：US15461999

申请日：2017-03-17

Applicant: VERSUM MATERIALS US, LLC

Inventor： Steven Gerard Mayorga ,  Heather Regina Bowen ,  Xinjian Lei ,  Manchao Xiao ,  Haripin Chandra ,  Anupama Mallikarjunan ,  Ronald Martin Pearlstein

IPC: C09D1/00 ,  H01L21/02 ,  C01B33/021 ,  C01B33/12 ,  C01B21/068 ,  C01B21/082 ,  C07F7/02 ,  C23C16/40 ,  C23C16/455

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US09997350B2

公开(公告)日：2018-06-12

申请号：US15459389

申请日：2017-03-15

Applicant: VERSUM MATERIALS US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC: C07F1/00 ,  H01L21/02 ,  C09D1/00 ,  C09D7/00 ,  C01B33/021 ,  C01B33/12 ,  C07F7/10 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

公开(公告)号：US11713328B2

公开(公告)日：2023-08-01

申请号：US16547468

申请日：2019-08-21

Applicant: Versum Materials US, LLC

Inventor： Robert G. Ridgeway ,  Raymond N. Vrtis ,  Xinjian Lei ,  Madhukar B. Rao ,  Steven Gerard Mayorga ,  Neil Osterwalder ,  Manchao Xiao ,  Meiliang Wang

IPC: C07F7/08 ,  B01D3/00

CPC classification number: C07F7/0803 ,  B01D3/009

Abstract: A method for producing an alkenyl or alkynyl-containing organosilicon precursor composition, the method comprising the steps of distilling at least once a composition comprising an alkenyl or alkynyl-containing organosilicon compound having the formula RnSiR14−n wherein R is selected a linear or branched C2 to C6 alkenyl group, a linear or branched C2 to C6 alkynyl group; R1 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C3 to C10 cyclic alkyl group; and n is a number selected from 1 to 4, wherein a distilled alkenyl or alkynyl-containing organosilicon precursor composition is produced after distilling; and packaging the distilled alkenyl or alkynyl-containing organosilicon precursor composition in a container, wherein the container permits transmission into the container of no more than 10% of ultraviolet and visible light having a wavelength of between 290 nm to 450 nm.

公开(公告)号：US20210323907A1

公开(公告)日：2021-10-21

申请号：US17362989

申请日：2021-06-30

Applicant: VERSUM MATERIALS US, LLC

Inventor： HAREESH THRIDANDAM ,  Stuart H. Dimock ,  Steven Gerard Mayorga ,  Ronald Martin Pearlstein

IPC: C07C211/10 ,  C07C209/86 ,  C07C209/84 ,  B01J20/18 ,  B01J20/28 ,  B65D81/20 ,  B08B9/08

Abstract: Ethylenediamine (EDA) compositions and methods for making the EDA that is suitable for use in thin-film semiconductor processing applications, are disclosed. The EDA is purified to remove water and trace metals. Water levels below about 50 ppm by weight are achieved by passing liquid through 3A type molecular sieve in a packed bed. Metallic impurities are removed by distillation and the resulting product is packaged in specially dried and optionally pre-conditioned containers.

公开(公告)号：US20180022691A1

公开(公告)日：2018-01-25

申请号：US15649271

申请日：2017-07-13

Applicant: Versum Materials US, LLC

Inventor： Hareesh Thridandam ,  Stuart H. Dimock ,  Steven Gerard Mayorga ,  Ronald Martin Pearlstein

IPC: C07C211/10 ,  C07C209/84 ,  B08B9/08 ,  B01J20/28 ,  B65D81/20 ,  C07C209/86 ,  B01J20/18

Abstract: Ethylenediamine (EDA) compositions and methods for making the EDA that is suitable for use in thin-film semiconductor processing applications, are disclosed. The EDA is purified to remove water and trace metals. Water levels below about 50 ppm by weight are achieved by passing liquid through 3A type molecular sieve in a packed bed. Metallic impurities are removed by distillation and the resulting product is packaged in specially dried and optionally pre-conditioned containers.

公开(公告)号：US20170186605A1

公开(公告)日：2017-06-29

申请号：US15459389

申请日：2017-03-15

Applicant: VERSUM MATERIALS US, LLC

Inventor： Manchao Xiao ,  Xinjian Lei ,  Daniel P. Spence ,  Haripin Chandra ,  Bing Han ,  Mark Leonard O'Neill ,  Steven Gerard Mayorga ,  Anupama Mallikarjunan

IPC: H01L21/02 ,  C09D7/00 ,  C23C16/455 ,  C01B33/12 ,  C07F7/10 ,  C23C16/34 ,  C09D1/00 ,  C01B33/021

CPC classification number: H01L21/02211 ,  C01B21/0682 ,  C01B21/0828 ,  C01B33/021 ,  C01B33/126 ,  C01P2002/02 ,  C07F7/025 ,  C07F7/10 ,  C09D1/00 ,  C09D7/20 ,  C23C16/18 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45542 ,  C23C16/45553 ,  C23C16/46 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02219 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02532 ,  H01L21/0262 ,  Y10T428/13

Abstract: Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein R1 is selected from linear or branched C3 to C10 alkyl group, linear or branched C3 to C10 alkenyl group, linear or branched C3 to C10 alkynyl group, C1 to C6 dialkylamino group, electron withdrawing group, and C6 to C10 aryl group; R2 is selected from hydrogen, linear or branched C1 to C10 alkyl group, linear or branched C3 to C6 alkenyl group, linear or branched C3 to C6 alkynyl group, C1 to C6 dialkylamino group, C6 to C10 aryl group, linear or branched C1 to C6 fluorinated alkyl group, electron withdrawing group, and C4 to C10 aryl group; optionally wherein R1 and R2 are linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.