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    Controlling the thickness of wafers during the electroplating process
    1.
    发明授权
    Controlling the thickness of wafers during the electroplating process 有权
    控制电镀过程中晶圆的厚度

    公开(公告)号：US07914657B2

    公开(公告)日：2011-03-29

    申请号：US11292606

    申请日：2005-12-01

    申请人： Wai B. Fu ,  Hieu Lam ,  Shahram Y. Mehdizadeh ,  Yeak-Chong Wong

    发明人： Wai B. Fu ,  Hieu Lam ,  Shahram Y. Mehdizadeh ,  Yeak-Chong Wong

    IPC分类号： C25D21/12

    CPC分类号： C25D21/12 ,  C25D17/001

    摘要： Embodiments of the present invention pertain to controlling thickness of wafers during electroplating process. Information pertaining to an old current used during an electroplating process of a previous wafer is received. Information pertaining to the thickness of the previous wafer is received. A new current is automatically determined. The new current is to be used during an electroplating process for a new wafer. The new current is determined based on the information pertaining to the old current and the information pertaining to the thickness of the previous wafer.

    摘要翻译： 本发明的实施例涉及在电镀过程中控制晶片的厚度。 接收关于在前一晶片的电镀过程期间使用的旧电流的信息。 接收与前一晶片的厚度有关的信息。 自动确定新的电流。 在新的晶片的电镀过程中使用新的电流。 基于与旧电流有关的信息和与先前晶片的厚度相关的信息来确定新电流。

    Controlling the thickness of wafers during the electroplating process
    2.
    发明申请
    Controlling the thickness of wafers during the electroplating process 有权
    控制电镀过程中晶圆的厚度

    公开(公告)号：US20070125656A1

    公开(公告)日：2007-06-07

    申请号：US11292606

    申请日：2005-12-01

    申请人： Wai Fu ,  Hieu Lam ,  Shahram Mehdizadeh ,  Yeak-Chong Wong

    发明人： Wai Fu ,  Hieu Lam ,  Shahram Mehdizadeh ,  Yeak-Chong Wong

    IPC分类号： C25D21/12

    CPC分类号： C25D21/12 ,  C25D17/001

    摘要： Embodiments of the present invention pertain to controlling thickness of wafers during electroplating process. Information pertaining to an old current used during an electroplating process of a previous wafer is received. Information pertaining to the thickness of the previous wafer is received. A new current is automatically determined. The new current is to be used during an electroplating process for a new wafer. The new current is determined based on the information pertaining to the old current and the information pertaining to the thickness of the previous wafer.

    摘要翻译： 本发明的实施例涉及在电镀过程中控制晶片的厚度。 接收关于在前一晶片的电镀过程期间使用的旧电流的信息。 接收与前一晶片的厚度有关的信息。 自动确定新的电流。 在新的晶片的电镀过程中使用新的电流。 基于与旧电流有关的信息和与先前晶片的厚度相关的信息来确定新电流。

    Advanced-process-control system utilizing a lambda tuner
    4.
    发明授权
    Advanced-process-control system utilizing a lambda tuner 有权
    使用lambda调谐器的高级过程控制系统

    公开(公告)号：US07809459B2

    公开(公告)日：2010-10-05

    申请号：US12006411

    申请日：2007-12-31

    申请人： Toshihiro Morisawa ,  Andrew C. Walker ,  Yeak-Chong Wong

    发明人： Toshihiro Morisawa ,  Andrew C. Walker ,  Yeak-Chong Wong

    IPC分类号： G06F19/00 ,  G06F17/10 ,  G05B13/02

    CPC分类号： G05B13/041

    摘要： An advanced process control (APC) system. The APC system comprises a database for receiving process data from a measurement tool for a plurality of process runs and for storing the process data. A lambda tuner determines a tuned-lambda value corresponding to a process-capability-index value based on upper and lower process control limits and statistics derived from the process data. A process-run controller updates a recipe value based on the received process data and the tuned-lambda value.

    摘要翻译： 先进的过程控制（APC）系统。 APC系统包括用于从用于多个处理运行的测量工具接收处理数据并用于存储过程数据的数据库。 lambda调谐器基于上下过程控制限制和从过程数据导出的统计信息来确定对应于过程能力指数值的调整lambda值。 过程运行控制器基于接收到的过程数据和调整的lambda值来更新配方值。

    Aggregated run-to-run process control for wafer yield optimization
    6.
    发明申请
    Aggregated run-to-run process control for wafer yield optimization 失效
    用于晶圆产量优化的聚合运行过程控制

    公开(公告)号：US20060265162A1

    公开(公告)日：2006-11-23

    申请号：US11123609

    申请日：2005-05-04

    申请人： Amelia Muro ,  Andrew Walker ,  Yeak-Chong Wong

    发明人： Amelia Muro ,  Andrew Walker ,  Yeak-Chong Wong

    IPC分类号： G01N37/00 ,  G06F19/00

    CPC分类号： H01L21/67253 ,  H01L21/67276

    摘要： A method for processing wafers in a batch processing tool that optimizes yield by minimizing within batch wafer variation in a wafer process. In a tool having a plurality of available wafer positions for a batch process, the method is useful when less than a full batch of wafers is to be processed. All of the possible wafer position combinations are determined and the within batch variation for each position combination is determined. The wafer position combination resulting in the least amount of within batch variation in the wafer process is then selected as the wafer placement combination for use in the process.

    摘要翻译： 一种用于在批处理工具中处理晶片的方法，其通过最小化晶片工艺中的批次晶片变化来优化产量。 在具有用于批处理的多个可用晶片位置的工具中，当少于一批全部晶片被处理时，该方法是有用的。 确定所有可能的晶片位置组合，并确定每个位置组合的批量间变化。 然后选择晶片位置组合，使得在晶片工艺中产生最少批量变化的晶片位置组合作为在该过程中使用的晶片放置组合。

    Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model
    7.
    发明申请
    Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model 失效
    基于中心到边缘模型的用于CMP径向均匀性优化的背侧压力的运行控制控制

    公开(公告)号：US20050239222A1

    公开(公告)日：2005-10-27

    申请号：US10831592

    申请日：2004-04-23

    申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

    发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

    IPC分类号： B24B5/00 ,  B24B37/04 ,  B24B47/02 ,  B24B49/03 ,  G01R31/26 ,  H01L21/66

    CPC分类号： B24B49/03 ,  B24B37/042

    摘要： During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure.” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.

    摘要翻译： 在晶片的平坦化期间，在通过化学机械抛光对晶片进行平面化之后，在多个位置测量晶片层的厚度。 厚度测量用于自动确定从测量结合到的中心到边缘轮廓模型，控制称为“背侧压力”的化学机械抛光的参数。 在一些实施例中，通过基于中心到边缘轮廓模型的逻辑测试，模型的确定系数R平方和背侧压力的当前值来确定背侧压力。 注意，仅当对模型的测量的拟合良好时才调整“背侧压力”设定点。 如R平方所示大于预定极限。 接下来，将从模型确定的背面压力用于平面化后续晶片。

    Methods for providing run to run process control using a dynamic tuner
    8.
    发明授权
    Methods for providing run to run process control using a dynamic tuner 有权
    使用动态调谐器提供运行过程控制的方法

    公开(公告)号：US09213322B1

    公开(公告)日：2015-12-15

    申请号：US13587754

    申请日：2012-08-16

    申请人： Jian-Huei Feng ,  Ming Jiang ,  Clayton R. Newman ,  Yeak-Chong Wong

    发明人： Jian-Huei Feng ,  Ming Jiang ,  Clayton R. Newman ,  Yeak-Chong Wong

    IPC分类号： G05B13/02 ,  G05B13/04

    CPC分类号： G05B13/024 ,  G05B13/042 ,  G05B13/048

    摘要： Methods for providing run to run process control using a dynamic tuner are provided. Once such method includes receiving a data point for a process output parameter, determining whether the data point is within a desired range for the process output parameter, setting, when the data point is within the desired range, a dynamic lambda value equal to a preselected base lambda value, setting, when the data point is not within the desired range, the dynamic lambda value equal to a value based on the preselected base lambda value, a degree of difference between the data point and a target for the process output parameter, and a scale factor, calculating an exponentially weighted moving average using the dynamic lambda value, and adjusting the process control parameter in accordance with the exponentially weighted moving average.

    摘要翻译： 提供了使用动态调谐器提供运行过程控制运行的方法。 一旦这样的方法包括接收过程输出参数的数据点，确定数据点是否在处理输出参数的期望范围内，当数据点在期望范围内时，设置等于预选的动态λ值 基本λ值，当数据点不在期望范围内时，设置，动态λ值等于基于预选的基本λ值的值，数据点与过程输出参数的目标之间的差异程度， 和比例因子，使用动态λ值计算指数加权移动平均值，以及根据指数加权移动平均值来调整过程控制参数。

    Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model
    9.
    发明授权
    Run-to-run control of backside pressure for CMP radial uniformity optimization based on center-to-edge model 有权
    基于中心到边缘模型的用于CMP径向均匀性优化的背侧压力的运行控制控制

    公开(公告)号：US07722436B2

    公开(公告)日：2010-05-25

    申请号：US11832455

    申请日：2007-08-01

    申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

    发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

    IPC分类号： B24B49/00

    CPC分类号： B24B49/03 ,  B24B37/042

    摘要： During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure.” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.

    摘要翻译： 在晶片的平坦化期间，在通过化学机械抛光对晶片进行平面化之后，在多个位置测量晶片层的厚度。 厚度测量用于自动确定从测量结合到的中心到边缘轮廓模型，控制称为“后侧压力”的化学机械抛光的参数。背面压力在一些实施例中通过基于 中心到边缘轮廓模型，模型的确定系数R平方和背侧压力的当前值。 注意，仅当对模型的测量的拟合良好时才调整“背侧压力”设定点。 如R平方所示大于预定极限。 接下来，将从模型确定的背面压力用于平面化后续晶片。

    Advanced-process-control system utilizing a lambda tuner
    10.
    发明申请
    Advanced-process-control system utilizing a lambda tuner 有权
    使用lambda调谐器的高级过程控制系统

    公开(公告)号：US20090171638A1

    公开(公告)日：2009-07-02

    申请号：US12006411

    申请日：2007-12-31

    申请人： Toshihiro Morisawa ,  Andrew C. Walker ,  Yeak-Chong Wong

    发明人： Toshihiro Morisawa ,  Andrew C. Walker ,  Yeak-Chong Wong

    IPC分类号： G06G7/48 ,  G05B13/04

    CPC分类号： G05B13/041

    摘要： An advanced process control (APC) system. The APC system comprises a database for receiving process data from a measurement tool for a plurality of process runs and for storing the process data. A lambda tuner determines a tuned-lambda value corresponding to a process-capability-index value based on upper and lower process control limits and statistics derived from the process data. A process-run controller updates a recipe value based on the received process data and the tuned-lambda value.

    摘要翻译： 先进的过程控制（APC）系统。 APC系统包括用于从用于多个处理运行的测量工具接收处理数据并用于存储过程数据的数据库。 lambda调谐器基于上下过程控制限制和从过程数据导出的统计信息来确定对应于过程能力指数值的调整lambda值。 过程运行控制器基于接收到的过程数据和调整的lambda值来更新配方值。