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27 条记录 (耗时 0.023 秒)

    Controlling the thickness of wafers during the electroplating process
    1.
    发明申请
    Controlling the thickness of wafers during the electroplating process 有权
    控制电镀过程中晶圆的厚度

    公开(公告)号：US20070125656A1

    公开(公告)日：2007-06-07

    申请号：US11292606

    申请日：2005-12-01

    申请人： Wai Fu ,  Hieu Lam ,  Shahram Mehdizadeh ,  Yeak-Chong Wong

    发明人： Wai Fu ,  Hieu Lam ,  Shahram Mehdizadeh ,  Yeak-Chong Wong

    IPC分类号： C25D21/12

    CPC分类号： C25D21/12 ,  C25D17/001

    摘要： Embodiments of the present invention pertain to controlling thickness of wafers during electroplating process. Information pertaining to an old current used during an electroplating process of a previous wafer is received. Information pertaining to the thickness of the previous wafer is received. A new current is automatically determined. The new current is to be used during an electroplating process for a new wafer. The new current is determined based on the information pertaining to the old current and the information pertaining to the thickness of the previous wafer.

    摘要翻译： 本发明的实施例涉及在电镀过程中控制晶片的厚度。 接收关于在前一晶片的电镀过程期间使用的旧电流的信息。 接收与前一晶片的厚度有关的信息。 自动确定新的电流。 在新的晶片的电镀过程中使用新的电流。 基于与旧电流有关的信息和与先前晶片的厚度相关的信息来确定新电流。

    Controlling the thickness of wafers during the electroplating process
    2.
    发明授权
    Controlling the thickness of wafers during the electroplating process 有权
    控制电镀过程中晶圆的厚度

    公开(公告)号：US07914657B2

    公开(公告)日：2011-03-29

    申请号：US11292606

    申请日：2005-12-01

    申请人： Wai B. Fu ,  Hieu Lam ,  Shahram Y. Mehdizadeh ,  Yeak-Chong Wong

    发明人： Wai B. Fu ,  Hieu Lam ,  Shahram Y. Mehdizadeh ,  Yeak-Chong Wong

    IPC分类号： C25D21/12

    CPC分类号： C25D21/12 ,  C25D17/001

    摘要： Embodiments of the present invention pertain to controlling thickness of wafers during electroplating process. Information pertaining to an old current used during an electroplating process of a previous wafer is received. Information pertaining to the thickness of the previous wafer is received. A new current is automatically determined. The new current is to be used during an electroplating process for a new wafer. The new current is determined based on the information pertaining to the old current and the information pertaining to the thickness of the previous wafer.

    摘要翻译： 本发明的实施例涉及在电镀过程中控制晶片的厚度。 接收关于在前一晶片的电镀过程期间使用的旧电流的信息。 接收与前一晶片的厚度有关的信息。 自动确定新的电流。 在新的晶片的电镀过程中使用新的电流。 基于与旧电流有关的信息和与先前晶片的厚度相关的信息来确定新电流。

    Methods for improving positioning performance of electron beam lithography on magnetic wafers
    7.
    发明授权
    Methods for improving positioning performance of electron beam lithography on magnetic wafers 失效
    改善电子束光刻在磁晶片上的定位性能的方法

    公开(公告)号：US07172786B2

    公开(公告)日：2007-02-06

    申请号：US10845956

    申请日：2004-05-14

    申请人： Alexander Adrian Girling Driskill-Smith ,  Hieu Lam ,  Kim Y. Lee

    发明人： Alexander Adrian Girling Driskill-Smith ,  Hieu Lam ,  Kim Y. Lee

    IPC分类号： B05D5/12

    CPC分类号： G11B5/855 ,  C25D3/562 ,  C25D5/022 ,  G11B5/858

    摘要： The present invention discloses a method for the production of sub-micron structures on magnetic materials using electron beam lithography. A subtractive process is disclosed wherein a portion of a magnetic material layer is removed from the substrate using conventional lithography, and the remaining portion of the magnetic material layer is patterned by e-beam lithography. A additive process is also disclosed wherein a thin magnetic seed layer is deposited on the substrate, a portion of which is removed by conventional lithography and replaced with a non-magnetic conducting layer. The remaining portion of magnetic seed layer is patterned by e-beam lithography and the final magnetic structure produced by electroplating.

    摘要翻译： 本发明公开了一种使用电子束光刻在磁性材料上生产亚微米结构的方法。 公开了一种消减方法，其中使用常规光刻将磁性材料层的一部分从衬底上除去，并且通过电子束光刻将磁性材料层的剩余部分图案化。 还公开了一种添加方法，其中将薄的磁性种子​​层沉积在基底上，其一部分通过常规的光刻法被去除并被非磁性导电层代替。 通过电子束光刻和通过电镀产生的最终磁性结构对磁性种子层的剩余部分进行构图。

    P1 write pole with shoulder formation and method of fabrication
    8.
    发明申请
    P1 write pole with shoulder formation and method of fabrication 失效
    P1写杆与肩部形成和制造方法

    公开(公告)号：US20060171069A1

    公开(公告)日：2006-08-03

    申请号：US11046740

    申请日：2005-01-31

    申请人： Daniel Bedell ,  Hung-Chin Guthrie ,  Ming Jiang ,  Hieu Lam ,  Jyh-Shuey Lo ,  Edward Lee ,  Aron Pentek

    发明人： Daniel Bedell ,  Hung-Chin Guthrie ,  Ming Jiang ,  Hieu Lam ,  Jyh-Shuey Lo ,  Edward Lee ,  Aron Pentek

    IPC分类号： G11B5/147

    CPC分类号： G11B5/1871 ,  G11B5/3116

    摘要： A magnetic disk drive head is disclosed including a write head, which includes a P1 layer having a pedestal portion, a gap layer formed on the P1 layer, and a P2 layer formed on the gap layer. The P1 layer includes a shoulder formation having a neck portion and a beveled portion. Also disclosed is a disk drive having a write head with a P1 layer with shoulder formation, and a method for fabricating a write pole for a magnetic recording head having a P1 layer with shoulder formation.

    摘要翻译： 公开了一种包括写头的磁盘驱动器头，该写头包括具有基座部分的P 1层，在P 1层上形成的间隙层和形成在间隙层上的P 2层。 P 1层包括具有颈部和斜面部分的肩部结构。 还公开了一种具有具有肩部形成的P 1层的写入头的磁盘驱动器，以及用于制造具有具有肩部形成的P 1层的磁性记录头的写入磁极的方法。

    Method and apparatus for using a pressure control system to monitor a plasma processing system
    9.
    发明申请
    Method and apparatus for using a pressure control system to monitor a plasma processing system 有权
    用于使用压力控制系统监测等离子体处理系统的方法和装置

    公开(公告)号：US20050283321A1

    公开(公告)日：2005-12-22

    申请号：US10868346

    申请日：2004-06-16

    申请人： Hongyu Yue ,  Hieu Lam

    发明人： Hongyu Yue ,  Hieu Lam

    IPC分类号： H01J37/32 ,  G01N31/00 ,  G06F19/00

    CPC分类号： H01J37/32623 ,  H01J37/32935

    摘要： A method and apparatus is presented for using a pressure control system to monitor a plasma processing system. By monitoring variations in the state of the pressure control system, a fault condition, an erroneous fault condition, or a service condition can be detected. For example, the service condition can include monitoring the accumulation of residue between successive preventative maintenance events.

    摘要翻译： 提出了一种使用压力控制系统监测等离子体处理系统的方法和装置。 通过监视压力控制系统的状态的变化，可以检测故障状况，错误故障状况或服务条件。 例如，服务条件可以包括在连续的预防性维护事件之间监视残留物的累积。

    METHOD OF MANUFACTURING A PERPENDICULAR MAGNETIC WRITE HEAD WITH STEPPED TRAILING MAGNETIC SHIELD WITH ELECTRICAL LAPPING GUIDE CONTROL
    10.
    发明申请
    METHOD OF MANUFACTURING A PERPENDICULAR MAGNETIC WRITE HEAD WITH STEPPED TRAILING MAGNETIC SHIELD WITH ELECTRICAL LAPPING GUIDE CONTROL 有权
    使用带电导线控制的步进式磁屏蔽制造全磁性写磁头的方法

    公开(公告)号：US20090152235A1

    公开(公告)日：2009-06-18

    申请号：US11956292

    申请日：2007-12-13

    申请人： Wen-Chien David Hsiao ,  Hieu Lam ,  Vladimir Nikitin ,  Sue Siyang Zhang ,  Yi Zheng

    发明人： Wen-Chien David Hsiao ,  Hieu Lam ,  Vladimir Nikitin ,  Sue Siyang Zhang ,  Yi Zheng

    IPC分类号： B44C1/22

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315 ,  G11B5/3166 ,  G11B5/3169

    摘要： A method for manufacturing a magnetic write head having a stepped trailing shield. The stepped trailing shield is formed by forming a non-magnetic bump over a write pole prior to electroplating a wrap-around magnetic shield. The method allows the location of the front edge of the bump relative to the back edge of the wrap-around shield to be monitored by measuring the electrical resistance of an electrical lapping guide formed concurrently with these features. This concurrent formation of a lapping guide can be used to define the relative location of other features as well, such as the location of a back edge of a wrap-around shield relative to a flare point of a write pole.

    摘要翻译： 一种用于制造具有阶梯式后挡板的磁写头的方法。 在电镀环绕磁屏蔽之前，通过在写入极上形成非磁性凸块来形成阶梯式后屏蔽。 该方法允许通过测量与这些特征同时形成的电研磨引导件的电阻来监测凸块的前边缘相对于环绕护罩的后边缘的位置。 研磨引导件的这种同时形成也可以用于限定其它特征的相对位置，例如环绕屏蔽件的后边缘相对于写入极点的扩张点的位置。