Method of forming a packaged semiconductor device
    3.
    发明授权
    Method of forming a packaged semiconductor device 有权
    形成封装半导体器件的方法

    公开(公告)号:US08216918B2

    公开(公告)日:2012-07-10

    申请号:US12842562

    申请日:2010-07-23

    IPC分类号: H01L21/00 H01L21/322

    摘要: A method is used to form a packaged semiconductor device. A semiconductor device, which has an active surface, is placed in an opening of a circuit board. The circuit board has a first major surface and a second major surface having the opening, first vias that extend between the first major surface and the second major surface, first contact pads terminating the vias at the first major surface, and second contact pads terminating the vias at the second major surface. A dielectric layer is applied over the semiconductor device and the second major surface of the circuit board. An interconnect layer is formed over the dielectric layer. The interconnect layer has second vias electrically connected to the second contact pads, third vias that are electrically connected to the active surface of the semiconductor device, an exposed surface, and third contact pads at the exposed surface.

    摘要翻译: 使用一种方法来形成封装的半导体器件。 具有活性表面的半导体器件被放置在电路板的开口中。 电路板具有第一主表面和具有开口的第二主表面,在第一主表面和第二主表面之间延伸的第一通孔,第一接触垫在第一主表面处终止通孔,第二接触垫终止 第二个主要表面的通孔。 电介质层被施加在半导体器件和电路板的第二主表面上。 在电介质层上形成互连层。 互连层具有电连接到第二接触焊盘的第二通孔,电连接到半导体器件的有源表面的第三通孔,暴露表面和暴露表面处的第三接触焊盘。

    METHOD OF FORMING A PACKAGED SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD OF FORMING A PACKAGED SEMICONDUCTOR DEVICE 有权
    形成包装半导体器件的方法

    公开(公告)号:US20120021565A1

    公开(公告)日:2012-01-26

    申请号:US12842562

    申请日:2010-07-23

    IPC分类号: H01L21/58

    摘要: A method is used to form a packaged semiconductor device. A semiconductor device, which has an active surface, is placed in an opening of a circuit board. The circuit board has a first major surface and a second major surface having the opening, first vias that extend between the first major surface and the second major surface, first contact pads terminating the vias at the first major surface, and second contact pads terminating the vias at the second major surface. A dielectric layer is applied over the semiconductor device and the second major surface of the circuit board. An interconnect layer is formed over the dielectric layer. The interconnect layer has second vias electrically connected to the second contact pads, third vias that are electrically connected to the active surface of the semiconductor device, an exposed surface, and third contact pads at the exposed surface.

    摘要翻译: 使用一种方法来形成封装的半导体器件。 具有活性表面的半导体器件被放置在电路板的开口中。 电路板具有第一主表面和具有开口的第二主表面,在第一主表面和第二主表面之间延伸的第一通孔,第一接触垫在第一主表面处终止通孔,第二接触垫终止 第二个主要表面的通孔。 电介质层被施加在半导体器件和电路板的第二主表面上。 在电介质层上形成互连层。 互连层具有电连接到第二接触焊盘的第二通孔,电连接到半导体器件的有源表面的第三通孔,暴露表面和暴露表面处的第三接触焊盘。