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    Filter for material supply apparatus of an extreme ultraviolet light source
    2.
    发明授权
    Filter for material supply apparatus of an extreme ultraviolet light source 有权
    过滤器用于极紫外光源的材料供应装置

    公开(公告)号：US09029813B2

    公开(公告)日：2015-05-12

    申请号：US13112784

    申请日：2011-05-20

    申请人： Igor V. Fomenkov ,  William N. Partlo ,  Georgiy O. Vaschenko ,  William Oldham

    发明人： Igor V. Fomenkov ,  William N. Partlo ,  Georgiy O. Vaschenko ,  William Oldham

    IPC分类号： G01J3/10 ,  B22F3/105 ,  B01D29/56

    CPC分类号： B01D29/56 ,  B22F3/105 ,  H05G2/006 ,  H05G2/008 ,  H05H1/46

    摘要： A filter is used in a target material supply apparatus and includes a sheet having a first flat surface and a second opposing flat surface, and a plurality of through holes. The first flat surface is in fluid communication with a reservoir that holds a target mixture that includes a target material and non-target particles. The through holes extend from the second flat surface and are fluidly coupled at the second flat surface to an orifice of a nozzle. The sheet has a surface area that is exposed to the target mixture, the exposed surface area being at least a factor of one hundred less than an exposed surface area of a sintered filter having an equivalent transverse extent to that of the sheet.

    摘要翻译： 在目标材料供给装置中使用过滤器，并且包括具有第一平面和第二相对平坦面的片，以及多个通孔。 第一平坦表面与储存包含目标材料和非目标颗粒的目标混合物的储存器流体连通。 通孔从第二平坦表面延伸并且在第二平坦表面处流体耦合到喷嘴的孔口。 片材具有暴露于目标混合物的表面积，暴露的表面积比具有与片材相当的横向程度的烧结过滤器的暴露表面积至少要低一百倍。

    EUV collector debris management
    4.
    发明授权
    EUV collector debris management 失效
    EUV收集器碎片管理

    公开(公告)号：US08075732B2

    公开(公告)日：2011-12-13

    申请号：US10979945

    申请日：2004-11-01

    申请人： William N. Partlo ,  Richard L. Sandstrom ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  William Oldham ,  William F. Marx ,  Oscar Hemberg

    发明人： William N. Partlo ,  Richard L. Sandstrom ,  Igor V. Fomenkov ,  Alexander I. Ershov ,  William Oldham ,  William F. Marx ,  Oscar Hemberg

    IPC分类号： C23F1/00

    CPC分类号： B08B7/00

    摘要： A method and apparatus that may comprise an EUV light producing mechanism utilizing an EUV plasma source material comprising a material that will form an etching compound, which plasma source material produces EUV light in a band around a selected center wavelength comprising: an EUV plasma generation chamber; an EUV light collector contained within the chamber having a reflective surface containing at least one layer comprising a material that does not form an etching compound and/or forms a compound layer that does not significantly reduce the reflectivity of the reflective surface in the band; an etchant source gas contained within the chamber comprising an etchant source material with which the plasma source material forms an etching compound, which etching compound has a vapor pressure that will allow etching of the etching compound from the reflective surface. The etchant source material may comprises a halogen or halogen compound. The etchant source material may be selected based upon the etching being stimulated in the presence of photons of EUV light and/or DUV light and/or any excited energetic photons with sufficient energy to stimulate the etching of the plasma source material. The apparatus may further comprise an etching stimulation plasma generator providing an etching stimulation plasma in the working vicinity of the reflective surface; and the etchant source material may be selected based upon the etching being stimulated by an etching stimulation plasma. There may also be an ion accelerator accelerating ions toward the reflective surface. The ions may comprise etchant source material. The apparatus and method may comprise a part of an EUV production subsystem with an optical element to be etched of plasma source material.

    摘要翻译： 可以包括使用EUV等离子体源材料的EUV发光机构的方法和装置，所述EUV等离子体源材料包括将形成蚀刻化合物的材料，所述等离子体源材料在所选择的中心波长周围的带内产生EUV光，包括：EUV等离子体产生室 ; 包含在室内的EUV光收集器具有反射表面，该反射表面包含至少一层，该层包含不形成蚀刻化合物的材料和/或形成不显着降低该带中的反射表面的反射率的化合物层; 包含在腔室内的蚀刻剂源气体包括蚀刻剂源材料，等离子体源材料与蚀刻剂源材料形成蚀刻化合物，该蚀刻化合物具有允许从反射表面蚀刻蚀刻化合物的蒸气压。 蚀刻剂源材料可以包含卤素或卤素化合物。 蚀刻剂源材料可以基于在存在EUV光和/或DUV光的光子和/或具有足够能量以激发等离子体源材料的蚀刻的任何激发能量光子的情况下被激发的蚀刻来选择。 该装置还可以包括在反射表面的工作附近提供蚀刻刺激等离子体的蚀刻刺激等离子体发生器; 并且蚀刻剂源材料可以基于通过蚀刻刺激等离子体刺激的蚀刻来选择。 还可以存在离子加速剂将离子朝向反射表面加速。 离子可以包括蚀刻剂源材料。 该装置和方法可以包括具有待蚀刻的等离子体源材料的光学元件的EUV生产子系统的一部分。

    Metrology for Extreme Ultraviolet Light Source
    5.
    发明申请
    Metrology for Extreme Ultraviolet Light Source 有权
    极紫外光源计量

    公开(公告)号：US20110141865A1

    公开(公告)日：2011-06-16

    申请号：US12637961

    申请日：2009-12-15

    申请人： Vahan Senekerimyan ,  Nam-Hyong Kim ,  Robert A. Bergstedt ,  Igor V. Fomenkov ,  William N. Partlo

    发明人： Vahan Senekerimyan ,  Nam-Hyong Kim ,  Robert A. Bergstedt ,  Igor V. Fomenkov ,  William N. Partlo

    IPC分类号： G11B20/00 ,  G11B7/00

    CPC分类号： G01J1/429 ,  H05G2/008

    摘要： An extreme ultraviolet light system includes a drive laser system that produces an amplified light beam; a target material delivery system configured to produce a target material at a target location; a beam delivery system configured to receive the amplified light beam emitted from the drive laser system and to direct the amplified light beam toward the target location; and a metrology system. The beam delivery system includes converging lens configured and arranged to focus the amplified light beam at the target location. The metrology system includes a light collection system configured to collect a portion of the amplified light beam reflected from the converging lens and a portion of a guide laser beam reflected from the converging lens. The light collection system includes a dichroic optical device configured to optically separate the portions.

    摘要翻译： 极紫外光系统包括产生放大光束的驱动激光系统; 配置成在目标位置产生目标材料的目标材料输送系统; 射束传送系统，被配置为接收从驱动激光系统发射的放大光束并将放大的光束引向目标位置; 和计量系统。 光束传送系统包括被配置和布置成将被放大的光束聚焦在目标位置处的会聚透镜。 测量系统包括：光收集系统，被配置为收集从会聚透镜反射的放大光束的一部分和从会聚透镜反射的一部分引导激光束。 光采集系统包括配置为光学地分离这些部分的二向色光学装置。

    Laser system
    9.
    发明授权
    Laser system 有权
    激光系统

    公开(公告)号：US07746913B2

    公开(公告)日：2010-06-29

    申请号：US11981449

    申请日：2007-10-30

    申请人： Alexander I. Ershov ,  William N. Partlo ,  Daniel J. W. Brown ,  Igor V. Fomenkov ,  Robert A. Bergstedt

    发明人： Alexander I. Ershov ,  William N. Partlo ,  Daniel J. W. Brown ,  Igor V. Fomenkov ,  Robert A. Bergstedt

    IPC分类号： H01S3/22

    CPC分类号： H01S3/2333 ,  G03F7/70025 ,  G03F7/70041 ,  G03F7/70558 ,  G03F7/70583 ,  H01S3/005 ,  H01S3/08 ,  H01S3/08059 ,  H01S3/105 ,  H01S3/2251 ,  H01S3/235 ,  H01S3/2366

    摘要： An apparatus/method which may comprise a line narrowed pulsed excimer or molecular fluorine gas discharge laser system which may comprise a seed laser oscillator producing an output comprising a seed laser output light beam of pulses which may comprise a first gas discharge excimer or molecular fluorine laser chamber; a line narrowing module within a first oscillator cavity; a laser amplification stage containing an amplifying gain medium in a second gas discharge excimer or molecular fluorine laser chamber receiving the output of the seed laser oscillator and amplifying the output of the seed laser oscillator to form a laser system output comprising a laser system output light beam of pulses, which may comprise a ring power amplification stage; a seed injection mechanism.

    摘要翻译： 可以包括线变窄的脉冲准分子或分子氟气体放电激光系统的装置/方法，其可以包括种子激光振荡器，其产生包括种子激光输出的脉冲光束的输出，所述种子激光输出光束可以包括第一气体放电准分子或分子氟激光 房间 第一振荡器腔内的线窄模块; 在第二气体放电准分子或分子氟激光室中包含放大增益介质的激光放大级，其接收种子激光振荡器的输出并放大种子激光振荡器的输出，以形成激光系统输出，该激光系统输出包括激光系统输出光束 的脉冲，其可以包括环形功率放大级; 种子注射机制。