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公开(公告)号：US09252077B2
公开(公告)日：2016-02-02
申请号：US14037213
申请日：2013-09-25
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L23/66 , H01L2223/6616 , H01L2223/6677 , H01L2224/13025 , H01L2224/16225 , H01L2224/73259 , H01L2924/15311 , H01L2924/3025
摘要： Via are described for radio frequency antenna connections related to a package. In one example, a package has a package substrate, a die attached to the package substrate, and a conductive via from the package substrate to an external surface of the package to make a radio frequency connection between the antenna and the package substrate.
摘要翻译： 描述了与封装有关的射频天线连接的通路。 在一个示例中，封装具有封装衬底，附接到封装衬底的管芯，以及从封装衬底到封装的外表面的导电通孔，以在天线和封装衬底之间形成射频连接。
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公开(公告)号：US20150001713A1
公开(公告)日：2015-01-01
申请号：US13931899
申请日：2013-06-29
IPC分类号： H01L23/00 , H01L25/065 , H01L23/498
CPC分类号： H01L23/5389 , H01L21/568 , H01L24/19 , H01L24/96 , H01L25/0655 , H01L2224/04105 , H01L2224/12105 , H01L2224/16225 , H01L2224/32225 , H01L2225/1035 , H01L2225/1041 , H01L2225/1058 , H01L2924/15311 , H01L2924/181 , H01L2924/00
摘要： A package with multiple chips and a shared redistribution layer is described. In one example, a first and a second die are formed where the first and the second die each have a different height. The dies are placed on a substrate. The first, the second, or both dies are ground so that the first and the second die are about the same height. Layers, such as redistribution layers are formed over both the first and the second die at the same time using a single process, and the first and the second die and the formed layers are packaged.
摘要翻译： 描述了具有多个芯片和共享再分配层的封装。 在一个示例中，形成第一和第二管芯，其中第一和第二管芯各自具有不同的高度。 将模具放置在基板上。 第一，第二或两个模具被磨削，使得第一和第二模具大约相同的高度。 使用单个工艺同时在第一和第二管芯上形成诸如再分布层的层，并且封装第一和第二管芯和形成的层。
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公开(公告)号：US20150084194A1
公开(公告)日：2015-03-26
申请号：US14037213
申请日：2013-09-25
IPC分类号： H01L23/48
CPC分类号： H01L23/481 , H01L23/66 , H01L2223/6616 , H01L2223/6677 , H01L2224/13025 , H01L2224/16225 , H01L2224/73259 , H01L2924/15311 , H01L2924/3025
摘要： Via are described for radio frequency antenna connections related to a package. In one example, a package has a package substrate, a die attached to the package substrate, and a conductive via from the package substrate to an external surface of the package to make a radio frequency connection between the antenna and the package substrate.
摘要翻译： 描述了与封装有关的射频天线连接的通路。 在一个示例中，封装具有封装衬底，附接到封装衬底的管芯，以及从封装衬底到封装的外表面的导电通孔，以在天线和封装衬底之间形成射频连接。
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公开(公告)号：US20150084165A1
公开(公告)日：2015-03-26
申请号：US14034854
申请日：2013-09-24
申请人： Reinhard Mahnkopf , Wolfgang Molzer , Bernd Memmler , Edmund Goetz , Hans-Joachim Barth , Sven Albers , Thorsten Meyer
发明人： Reinhard Mahnkopf , Wolfgang Molzer , Bernd Memmler , Edmund Goetz , Hans-Joachim Barth , Sven Albers , Thorsten Meyer
IPC分类号： H01L23/538 , H01L21/768 , H01L23/00 , H01L25/00 , H01L21/56 , H01L23/522 , H01L25/07
CPC分类号： H01L23/5389 , H01L21/56 , H01L21/563 , H01L21/76898 , H01L23/3121 , H01L23/5226 , H01L23/5384 , H01L23/562 , H01L24/03 , H01L24/81 , H01L25/0657 , H01L25/074 , H01L25/50 , H01L2224/08146 , H01L2224/16148 , H01L2224/73204 , H01L2225/06513 , H01L2225/06541 , H01L2225/06544 , H01L2225/06548 , H01L2225/06568 , H01L2924/181 , H01L2924/00012
摘要： Embodiments of the present description include stacked microelectronic dice embedded in a microelectronic substrate and methods of fabricating the same. In one embodiment, at least one first microelectronic die is attached to a second microelectronic die, wherein an underfill material is provided between the second microelectronic die and the at least one first microelectronic die. The microelectronic substrate is then formed by laminating the first microelectronic die and the second microelectronic die in a substrate material.
摘要翻译： 本说明书的实施例包括嵌入在微电子衬底中的堆叠微电子骰子及其制造方法。 在一个实施例中，至少一个第一微电子管芯连接到第二微电子管芯，其中在第二微电子管芯和至少一个第一微电子管芯之间提供底部填充材料。 然后通过将第一微电子管芯和第二微电子管芯层压在衬底材料中来形成微电子衬底。
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公开(公告)号：US20150091167A1
公开(公告)日：2015-04-02
申请号：US14039157
申请日：2013-09-27
申请人： Christian Geissler , Thorsten Meyer , Gerald Ofner , Reinhard Mahnkopf , Andreas Augustin , Christian Mueller
发明人： Christian Geissler , Thorsten Meyer , Gerald Ofner , Reinhard Mahnkopf , Andreas Augustin , Christian Mueller
CPC分类号： B81C1/00666 , B81B7/0054 , B81C1/00261 , B81C1/00349 , B81C2203/0136 , B81C2203/0154 , H01L21/568 , H01L23/3135 , H01L24/19 , H01L24/96 , H01L2224/12105 , H01L2224/16145 , H01L2224/24137 , H01L2224/32145 , H01L2224/48091 , H01L2224/48145 , H01L2224/73207 , H01L2224/73259 , H01L2224/73265 , H01L2224/73277 , H01L2924/1461 , H01L2924/181 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Stress buffer layers for integrated microelectromechanical systems (MEMS) are described. For example, a semiconductor package includes a substrate having first and second surfaces, the second surface having an array of external conductive contacts. A microelectromechanical system (MEMS) component is disposed above the first surface of the substrate. A buffer layer is disposed above the MEMS component, the buffer layer having a first Young's modulus. A mold compound is disposed above the buffer layer, the mold compound having a second Young's modulus higher than the first Young's modulus.
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公开(公告)号：US08415191B2
公开(公告)日：2013-04-09
申请号：US13218987
申请日：2011-08-26
IPC分类号： H01L29/84
CPC分类号： G01P15/08 , G01C19/56 , G01P15/097 , G01P15/125 , H01L28/40 , H01L29/785
摘要： Embodiments relate to micromachine structures. In one embodiment, a micromachine structure includes a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element includes a FinFET structure having a height and a width, the height being greater than the width.
摘要翻译： 实施例涉及微机械结构。 在一个实施例中，微型机械结构包括第一电极，第二电极和感测元件。 感测元件是机械可移动的并且设置在第一和第二电极之间并且适于在第一和第二电极之间振荡。 此外，感测元件包括具有高度和宽度的FinFET结构，高度大于宽度。
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公开(公告)号：US20120061777A1
公开(公告)日：2012-03-15
申请号：US13218987
申请日：2011-08-26
CPC分类号： G01P15/08 , G01C19/56 , G01P15/097 , G01P15/125 , H01L28/40 , H01L29/785
摘要： Embodiments relate to micromachine structures. In one embodiment, a micromachine structure includes a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element includes a FinFET structure having a height and a width, the height being greater than the width.
摘要翻译： 实施例涉及微机械结构。 在一个实施例中，微机械结构包括第一电极，第二电极和感测元件。 感测元件是机械可移动的并且设置在第一和第二电极之间并且适于在第一和第二电极之间振荡。 此外，感测元件包括具有高度和宽度的FinFET结构，高度大于宽度。
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公开(公告)号：US08076738B2
公开(公告)日：2011-12-13
申请号：US11863297
申请日：2007-09-28
IPC分类号： H01L29/84
CPC分类号： G01P15/08 , G01C19/56 , G01P15/097 , G01P15/125 , H01L28/40 , H01L29/785
摘要： Embodiments of the invention are related to micromachine structures. In one embodiment, a micromachine structure comprises a first electrode, a second electrode, and a sensing element. The sensing element is mechanically movable and is disposed intermediate the first and second electrodes and adapted to oscillate between the first and second electrodes. Further, the sensing element comprises a FinFET structure having a height and a width, the height being greater than the width.
摘要翻译： 本发明的实施例涉及微机械结构。 在一个实施例中，微机械结构包括第一电极，第二电极和感测元件。 感测元件是机械可移动的并且设置在第一和第二电极之间并且适于在第一和第二电极之间振荡。 此外，感测元件包括具有高度和宽度的FinFET结构，高度大于宽度。
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公开(公告)号：US5587599A
公开(公告)日：1996-12-24
申请号：US449213
申请日：1995-05-23
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L27/12 , H01L29/76 , H01L21/265
CPC分类号： H01L29/66265 , H01L27/0623
摘要： Bipolar transistor, potentially with monolithically integrated MOSFETs, in the body silicon layer having a thickness of approximately 0.6 .mu.m in a SOI substrate, have a collector region and a base region that are produced by implantation. An oxide layer provided for the gate oxide of the MOSFETs is applied surface-wide and is partially removed in the region of the bipolar transistor, a polysilicon layer (5) also employed for the gate electrodes of the MOSFETs is applied and structured. Implantation for highly doped termination regions (5, 10, 12) for emitter, base and collector ensue with masks (13). An emitter region (8) is driven out of the highly doped polysilicon layer as terminal region for the emitter in a temperature step. The doping degree of the collector region, as lowest doped region, can be selected so light that the collector region is completely depleted. The function corresponds to a vertical bipolar transistor with a lateral collector space-charged zone.
摘要翻译： 在SOI衬底中具有约0.6μm厚度的体硅层中的潜在地具有单片集成MOSFET的双极晶体管具有通过注入产生的集电极区域和基极区域。 为MOSFET的栅极氧化物提供的氧化物层被施加在表面宽度上，并且在双极晶体管的区域中部分地去除，并且还应用并构造了也用于MOSFET的栅电极的多晶硅层（5）。 用于发射器，基极和集电极的高掺杂终止区域（5,10,12）的植入物随着掩模（13）而发生。 在温度步骤中，发射极区域（8）从高掺杂多晶硅层作为发射极的端子区域被驱出。 作为最低掺杂区域的集电极区域的掺杂度可以如此选择，使得集电极区域完全耗尽。 该功能对应于具有横向收集器空间带电区域的垂直双极晶体管。
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10.发明授权公开(公告)号：US09056763B2
公开(公告)日：2015-06-16
申请号：US14039157
申请日：2013-09-27
申请人： Christian Geissler , Thorsten Meyer , Gerald Ofner , Reinhard Mahnkopf , Andreas Augustin , Christian Mueller
发明人： Christian Geissler , Thorsten Meyer , Gerald Ofner , Reinhard Mahnkopf , Andreas Augustin , Christian Mueller
CPC分类号： B81C1/00666 , B81B7/0054 , B81C1/00261 , B81C1/00349 , B81C2203/0136 , B81C2203/0154 , H01L21/568 , H01L23/3135 , H01L24/19 , H01L24/96 , H01L2224/12105 , H01L2224/16145 , H01L2224/24137 , H01L2224/32145 , H01L2224/48091 , H01L2224/48145 , H01L2224/73207 , H01L2224/73259 , H01L2224/73265 , H01L2224/73277 , H01L2924/1461 , H01L2924/181 , H01L2924/3511 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： Stress buffer layers for integrated microelectromechanical systems (MEMS) are described. For example, a semiconductor package includes a substrate having first and second surfaces, the second surface having an array of external conductive contacts. A microelectromechanical system (MEMS) component is disposed above the first surface of the substrate. A buffer layer is disposed above the MEMS component, the buffer layer having a first Young's modulus. A mold compound is disposed above the buffer layer, the mold compound having a second Young's modulus higher than the first Young's modulus.
摘要翻译： 描述了用于集成微机电系统（MEMS）的应力缓冲层。 例如，半导体封装包括具有第一和第二表面的衬底，第二表面具有外部导电触点阵列。 微机电系统（MEMS）部件设置在基板的第一表面上方。 缓冲层设置在MEMS部件上方，缓冲层具有第一杨氏模量。 模具化合物设置在缓冲层上方，模塑料具有高于第一杨氏模量的第二杨氏模量。
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