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    Low noise semiconductor devices
    5.
    发明授权
    Low noise semiconductor devices 有权
    低噪声半导体器件

    公开(公告)号：US09171726B2

    公开(公告)日：2015-10-27

    申请号：US12614362

    申请日：2009-11-06

    申请人： Giovanni Calabrese ,  Domagoj Siprak ,  Wolfgang Molzer ,  Uwe Hodel

    发明人： Giovanni Calabrese ,  Domagoj Siprak ,  Wolfgang Molzer ,  Uwe Hodel

    IPC分类号： H01L21/76 ,  H01L21/265 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L21/223

    CPC分类号： H01L29/66681 ,  H01L21/02057 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/30604 ,  H01L21/324 ,  H01L21/76237 ,  H01L29/0619 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/7835

    摘要： Semiconductor devices may be configured to reduce noise in the devices. For example, a semiconductor device may be configured or made with a first doped region within a semiconductor substrate to operate as an extended drain region, a trench isolation region, a second doped region between the first doped region and the trench isolation region, wherein the trench isolation region and the second doped region may be at least partially formed within the first doped region. Additionally, or alternatively, the second doped region may be within the first doped region and at least partially surround the trench isolation region, the first and second doped regions may have the same conductivity type, and the second doped region may have a higher conductivity than the first doped region.

    摘要翻译： 半导体器件可以被配置为降低器件中的噪声。 例如，半导体器件可以配置或制成半导体衬底内的第一掺杂区域，以在第一掺杂区域和沟槽隔离区域之间作为延伸漏极区域，沟槽隔离区域，第二掺杂区域工作，其中， 沟槽隔离区域和第二掺杂区域可以至少部分地形成在第一掺杂区域内。 另外或替代地，第二掺杂区域可以在第一掺杂区域内并且至少部分地围绕沟槽隔离区域，第一和第二掺杂区域可以具有相同的导电类型，并且第二掺杂区域可以具有比 第一掺杂区域。

    Silicon-germanium bipolar transistor with optimized germanium profile
    6.
    发明授权
    Silicon-germanium bipolar transistor with optimized germanium profile 有权
    具有优化锗型材的硅锗双极晶体管

    公开(公告)号：US06750483B2

    公开(公告)日：2004-06-15

    申请号：US10200541

    申请日：2002-07-22

    申请人： Wolfgang Klein ,  Rudolf Lachner ,  Wolfgang Molzer

    发明人： Wolfgang Klein ,  Rudolf Lachner ,  Wolfgang Molzer

    IPC分类号： H01L29737

    CPC分类号： H01L29/165 ,  H01L29/7378

    摘要： A silicon-germanium bipolar transistor includes a silicon substrate in which a first n-doped emitter region, a second p-doped base region adjoining the latter and a third n-doped collector region adjoining the latter, are formed. A first space charge zone is formed between the emitter region and the base region and a second space charge zone is formed between the base region and the collector region. The base region and an edge zone of the adjoining emitter region are alloyed with germanium. The germanium concentration in the emitter region rises toward the base region. The germanium concentration in a junction region containing the first space charge zone rises less sharply than in the emitter region or decreases and, in the base region, it initially again rises more sharply than in the junction region.

    摘要翻译： 硅 - 锗双极晶体管包括硅衬底，其中形成有第一n掺杂发射极区域，与之相邻的第二p掺杂基极区域和与之相邻的第三n掺杂集电极区域。 在发射极区域和基极区域之间形成第一空间电荷区域，并且在基极区域和集电极区域之间形成第二空间电荷区域。 邻接发射极区域的基极区域和边缘区域与锗合金化。 发射极区域中的锗浓度朝向基极区域上升。 包含第一空间电荷区的结区中的锗浓度比发射极区域急剧上升或降低，并且在基极区域中其初始地再次比在结区域中急剧上升。