公开(公告)号：US08148712B2

公开(公告)日：2012-04-03

申请号：US12300306

申请日：2007-05-08

申请人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

发明人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

IPC分类号： H01L29/06

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.

摘要翻译： 本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。 本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层含有具有确定的结晶界面的柱状晶体，柱状晶体密度为1×10 3〜1×10 5个晶体/μm2。

公开(公告)号：US20100213476A1

公开(公告)日：2010-08-26

申请号：US12377273

申请日：2007-09-26

申请人： Yasunori Yokoyama ,  Hiromitsu Sakai ,  Hisayuki Miki

发明人： Yasunori Yokoyama ,  Hiromitsu Sakai ,  Hisayuki Miki

IPC分类号： H01L33/30 ,  H01L21/20

CPC分类号： H01L33/007 ,  B82Y20/00 ,  C30B25/183 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02631 ,  H01L21/02658 ,  H01L2924/0002 ,  H01S5/0213 ,  H01S5/34333 ,  H01S2301/173 ,  H01L2924/00

摘要： The present invention provides a group-III nitride compound semiconductor light-emitting device having high productivity and good emission characteristics, a method of manufacturing a group-III nitride compound semiconductor light-emitting device, and a lamp. The method of manufacturing a group-III nitride compound semiconductor light-emitting device includes: a pre-process of performing plasma processing on a substrate (11); a sputtering process of forming an intermediate layer (12) made of at least a group-III nitride compound on the substrate (11) using a sputtering method after the pre-process; and a process of sequentially forming an n-type semiconductor layer (14) including an underlying layer (14a), a light-emitting layer (15), and a p-type semiconductor layer (16) on the intermediate layer (12).

摘要翻译： 本发明提供了具有高生产率和良好发射特性的III族氮化物化合物半导体发光器件，制造III族氮化物半导体发光器件和灯的方法。 III族氮化物化合物半导体发光器件的制造方法包括：对衬底（11）进行等离子体处理的预处理; 在预处理之后使用溅射法在所述基板（11）上形成由至少III族氮化物化合物制成的中间层（12）的溅射工艺; 以及在中间层（12）上依次形成包括下层（14a），发光层（15）和p型半导体层（16）的n型半导体层（14）的工序。

公开(公告)号：US20090146161A1

公开(公告)日：2009-06-11

申请号：US12300306

申请日：2007-05-08

申请人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

发明人： Hisayuki Miki ,  Hiromitsu Sakai ,  Kenzo Hanawa ,  Yasunori Yokoyama ,  Yasumasa Sasaki ,  Hiroaki Kaji

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L33/00

CPC分类号： C23C16/303 ,  C23C16/0272 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/16 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： An object of the present invention is to obtain a group III nitride compound semiconductor stacked structure where a group III nitride compound semiconductor layer having good crystallinity is stably stacked on a dissimilar substrate.The group III nitride compound semiconductor stacked structure of the present invention is a group III nitride compound semiconductor stacked structure comprising a substrate having provided thereon a first layer comprising a group III nitride compound semiconductor and a second layer being in contact with the first layer and comprising a group III nitride compound semiconductor, wherein the first layer contains a columnar crystal with a definite crystal interface and the columnar crystal density is from 1×103 to 1×105 crystals/μm2.

摘要翻译： 本发明的目的是获得具有良好结晶度的III族氮化物化合物半导体层稳定地层叠在不同的基板上的III族氮化物化合物半导体层叠结构。 本发明的III族氮化物化合物半导体堆叠结构是III族氮化物化合物半导体层叠结构，其包括在其上设置有包含III族氮化物化合物半导体的第一层和与第一层接触的第二层的衬底， III族氮化物化合物半导体，其中第一层包含具有确定的晶体界面的柱状晶体，并且柱状晶体密度为1×10 3〜1×10 5个晶体/ m 2。

公开(公告)号：US07855386B2

公开(公告)日：2010-12-21

申请号：US10585744

申请日：2005-04-27

申请人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

发明人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/025 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/32

摘要： An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits.The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

摘要翻译： 本发明的目的是提供一种具有优异的平坦度和很少凹坑的低电阻n型III族氮化物半导体层状结构。 本发明的n型III族氮化物半导体层状结构包括基板，并且在基板上堆叠包括n型杂质原子较高浓度层和n型杂质原子较低浓度层的n型杂质浓度周期性变化层 所述低浓度层堆叠在所述较高浓度层上。

公开(公告)号：US08049227B2

公开(公告)日：2011-11-01

申请号：US12293918

申请日：2007-03-23

申请人： Hisayuki Miki ,  Hiromitsu Sakai

发明人： Hisayuki Miki ,  Hiromitsu Sakai

IPC分类号： H01L33/00

CPC分类号： H01L33/02 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A group III nitride semiconductor light emitting device with a double sided electrode structure which has a low driving voltage as well as excellent light emission efficiency is provided, and the group III nitride semiconductor light emitting device includes at least an impurity layer 30 composed of a high concentration layer 3b made of a group III nitride semiconductor containing high concentration of impurity atoms, and a low concentration layer 3a made of a group III nitride semiconductor containing impurity atoms whose concentration is lower than that of the high concentration layer 3b; and a group III nitride semiconductor layer 2, and the lower concentration layer 3a and the high concentration layer 3b are continuously formed on the group III nitride semiconductor layer 2 in this order to form the group III nitride semiconductor light emitting device.

摘要翻译： 提供具有低驱动电压以及优异的发光效率的具有双面电极结构的III族氮化物半导体发光器件，并且III族氮化物半导体发光器件至少包括由高 由含有高浓度杂质原子的III族氮化物半导体制成的浓度层3b和由浓度低于高浓度层3b的杂质原子的III族氮化物半导体制成的低浓度层3a; 并且在III族氮化物半导体层2上连续地形成III族氮化物半导体层2，并且低浓度层3a和高浓度层3b依次形成III族氮化物半导体发光器件。

公开(公告)号：US20080230800A1

公开(公告)日：2008-09-25

申请号：US10585744

申请日：2005-04-27

申请人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

发明人： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

IPC分类号： H01L33/00 ,  H01L29/22 ,  H01L21/205

CPC分类号： H01L33/025 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/32

摘要： An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

摘要翻译： 本发明的目的是提供一种具有优异的平坦度和很少凹坑的低电阻n型III族氮化物半导体层状结构。 本发明的n型III族氮化物半导体层状结构包括基板，并且在基板上堆叠包括n型杂质原子较高浓度层和n型杂质原子较低浓度层的n型杂质浓度周期性变化层 所述低浓度层堆叠在所述较高浓度层上。

公开(公告)号：US20090206361A1

公开(公告)日：2009-08-20

申请号：US12293918

申请日：2007-03-23

申请人： Hisayuki Miki ,  Hiromitsu Sakai

发明人： Hisayuki Miki ,  Hiromitsu Sakai

IPC分类号： H01L33/00 ,  H01L21/24

CPC分类号： H01L33/02 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L33/007 ,  H01L33/025 ,  H01L33/04 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A group III nitride semiconductor light emitting device with a double sided electrode structure which has a low driving voltage as well as excellent light emission efficiency is provided, and the group III nitride semiconductor light emitting device includes at least an impurity layer 30 composed of a high concentration layer 3b made of a group III nitride semiconductor containing high concentration of impurity atoms, and a low concentration layer 3a made of a group III nitride semiconductor containing impurity atoms whose concentration is lower than that of the high concentration layer 3b; and a group III nitride semiconductor layer 2, and the lower concentration layer 3a and the high concentration layer 3b are continuously formed on the group III nitride semiconductor layer 2 in this order to form the group III nitride semiconductor light emitting device.

摘要翻译： 提供具有低驱动电压以及优异的发光效率的具有双面电极结构的III族氮化物半导体发光器件，并且III族氮化物半导体发光器件至少包括由高 由含有高浓度杂质原子的III族氮化物半导体制成的浓度层3b和由浓度低于高浓度层3b的杂质原子的III族氮化物半导体制成的低浓度层3a; 并且在III族氮化物半导体层2上连续地形成III族氮化物半导体层2，并且低浓度层3a和高浓度层3b依次形成III族氮化物半导体发光器件。

公开(公告)号：US20090194784A1

公开(公告)日：2009-08-06

申请号：US12306609

申请日：2008-01-15

申请人： Hiroaki Kaji ,  Yasunori Yokoyama ,  Hiromitsu Sakai

发明人： Hiroaki Kaji ,  Yasunori Yokoyama ,  Hiromitsu Sakai

IPC分类号： H01L33/00 ,  H01L29/205 ,  H01L29/20 ,  H01L21/20

CPC分类号： C23C16/34 ,  B82Y20/00 ,  C23C14/0617 ,  C23C14/0641 ,  C23C16/303 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/12 ,  H01L33/16 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/34333 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A group-III nitride compound semiconductor device of the present invention comprises a substrate, an intermediate layer provided on the substrate, and a base layer provided on the intermediate layer in which a full width at half maximum in rocking curve of a (0002) plane is 100 arcsec or lower and a full width at half maximum in rocking curve of a (10-10) plane is 300 arcsec or lower. Also, a production method of a group-III nitride compound semiconductor device of the present invention comprises forming the intermediate layer by using a sputtering method.

摘要翻译： 本发明的III族氮化物化合物半导体器件包括衬底，设置在衬底上的中间层和设置在中间层上的基底层，其中在（0002）平面的摇摆曲线中半高的全宽度 （10-10）平面的摆动曲线为100弧度以下，半高的全宽为300弧度以下。 此外，本发明的III族氮化物化合物半导体器件的制造方法包括使用溅射法形成中间层。

公开(公告)号：US08772060B2

公开(公告)日：2014-07-08

申请号：US13119127

申请日：2009-09-14

申请人： Hiromitsu Sakai ,  Takeshi Harada

发明人： Hiromitsu Sakai ,  Takeshi Harada

IPC分类号： H01L33/30 ,  H01L33/36 ,  H01L21/02 ,  H01L33/00

CPC分类号： H01L21/0254 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02573 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention provides a method for manufacturing a group III nitride semiconductor light emitting element, with which warping can be suppressed upon the formation of respective layers on the substrate, a semiconductor layer including a light emitting layer of excellent crystallinity can be formed, and excellent light emission characteristics can be obtained; such a group III nitride semiconductor light emitting element; and a lamp. Specifically disclosed is a method for manufacturing a group III nitride semiconductor light emitting element, in which an intermediate layer, an underlayer, an n-type contact layer, an n-type cladding layer, a light emitting layer, a p-type cladding layer, and a p-type contact layer are laminated in sequence on a principal plane of a substrate, wherein a substrate having a diameter of 4 inches (100 mm) or larger, with having an amount of warping H within a range from 0.1 to 30 μm and at least a part of the edge of the substrate warping toward the principal plane at room temperature, is prepared as the substrate; the X-ray rocking curve full width at half maximum (FWHM) of the (0002) plane is 100 arcsec or less and the X-ray rocking curve FWHM of the (10-10) plane is 300 arcsec or less, in a state where the intermediate layer has been formed on the substrate and where thereafter the underlayer and the n-type contact layer are formed on the intermediate layer; and furthermore the n-type cladding layer, the light emitting layer, the p-type cladding layer, and the p-type contact layer are formed on the n-type contact layer.

摘要翻译： 本发明提供一种制造III族氮化物半导体发光元件的方法，可以在基板上形成各层的同时抑制翘曲，可以形成包括具有优异结晶性的发光层的半导体层，并且优异 可获得发光特性; 这样的III族氮化物半导体发光元件; 和一盏灯。 具体公开了一种III族氮化物半导体发光元件的制造方法，其中中间层，下层，n型接触层，n型包覆层，发光层，p型包覆层 和p型接触层依次层叠在基板的主平面上，其中直径为4英寸（100mm）以上的基板，其翘曲度H在0.1〜30的范围内 并且准备在室温下朝向主平面翘曲的基板的边缘的至少一部分作为基板; （0002）面的X射线摇摆曲线半峰全宽（FWHM）为100弧秒以下，（10-10）面的X射线摇摆曲线FWHM为300arcsec以下，处于 其中中间层已经形成在衬底上，然后在中间层上形成底层和n型接触层; 此外，在n型接触层上形成n型包覆层，发光层，p型覆层和p型接触层。

公开(公告)号：US08421107B2

公开(公告)日：2013-04-16

申请号：US12999850

申请日：2009-06-17

申请人： Hironao Shinohara ,  Hiromitsu Sakai

发明人： Hironao Shinohara ,  Hiromitsu Sakai

IPC分类号： H01L33/20 ,  H01L33/32

CPC分类号： H01L33/007 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/12 ,  H01L33/16

摘要： A group III nitride semiconductor light emitting device including an LED structure formed on top of a single crystal, base layer (103) formed on top of a substrate (101) including a principal plane (10) having a flat surface (11) configured from a (0001) C plane, and a plurality of convex portions (12) including a surface (12c) non-parallel to the C plane having a width (d1) of 0.05 to 1.5 μm and height (H) of 0.05 to 1 μm, the base layer is formed by causing a group III nitride semiconductor to grow epitaxially so as to cover the flat surface and convex portions, and the width (d1) of the convex portions and top portion thickness (H2) of the base layer at the positions of the top portions (12e) of the convex portions satisfy: H2=kd1 (wherein 0.5

摘要翻译： 一种III族氮化物半导体发光器件，包括形成在基底（101）的顶部上的单晶基底层（103）的顶部上的LED结构，所述基底层包括具有由平面（11）构成的主平面（10） （0001）C面和多个凸部（12），该凸部包括与C面不平行的表面（12c），宽度（d1）为0.05〜1.5μm，高度（H）为0.05〜1μm 通过使III族氮化物半导体外延生长以覆盖平坦表面和凸部，并且凸起部分的宽度（d1）和基底层的顶部部分厚度（H2）在 凸部的顶部（12e）的位置满足：H2 = kd1（其中，0.5