In-Situ Accuracy Control in Flux Dipping
    3.
    发明申请
    In-Situ Accuracy Control in Flux Dipping 有权
    焊剂浸渍中的原位精度控制

    公开(公告)号:US20120211547A1

    公开(公告)日:2012-08-23

    申请号:US13031040

    申请日:2011-02-18

    IPC分类号: B23K1/20 B23K3/08

    CPC分类号: B23K1/203 B23K3/082

    摘要: A flux dipping apparatus includes a flux plate having a top surface; and a dipping cavity in the flux plate and recessed from the top surface. A flux leveler is disposed over the flux plate and configured to move parallel to the top surface. A piezoelectric actuator is configured to adjust a distance between the flux leveler and the top surface in response to a controlling voltage applied to electrodes of the first piezoelectric actuator.

    摘要翻译: 焊剂浸渍装置包括具有顶表面的焊剂板; 以及在焊剂板中的浸入腔并且从顶表面凹陷。 助熔剂矫正器设置在焊剂板上方并且被配置成平行于顶表面移动。 压电致动器被配置为响应于施加到第一压电致动器的电极的控制电压来调节通量调节器和顶表面之间的距离。

    In-situ accuracy control in flux dipping
    4.
    发明授权
    In-situ accuracy control in flux dipping 有权
    焊剂浸渍中的原位精度控制

    公开(公告)号:US08668131B2

    公开(公告)日:2014-03-11

    申请号:US13031040

    申请日:2011-02-18

    IPC分类号: B23K3/08 B23K1/20

    CPC分类号: B23K1/203 B23K3/082

    摘要: A flux dipping apparatus includes a flux plate having a top surface; and a dipping cavity in the flux plate and recessed from the top surface. A flux leveler is disposed over the flux plate and configured to move parallel to the top surface. A piezoelectric actuator is configured to adjust a distance between the flux leveler and the top surface in response to a controlling voltage applied to electrodes of the first piezoelectric actuator.

    摘要翻译: 焊剂浸渍装置包括具有顶表面的焊剂板; 以及在焊剂板中的浸入腔并且从顶表面凹陷。 助熔剂矫正器设置在焊剂板上方并且被配置成平行于顶表面移动。 压电致动器被配置为响应于施加到第一压电致动器的电极的控制电压来调节通量调节器和顶表面之间的距离。

    Methods for stud bump formation and apparatus for performing the same
    7.
    发明授权
    Methods for stud bump formation and apparatus for performing the same 有权
    螺栓凸块形成方法及其执行方法

    公开(公告)号:US08540136B1

    公开(公告)日:2013-09-24

    申请号:US13605403

    申请日:2012-09-06

    IPC分类号: B23K31/02 B23K37/00

    摘要: Methods for forming stud bumps and apparatuses for forming stud bumps are disclosed. According to an embodiment, a method includes clamping a wire with a clamp. The clamp includes at least two opposing plates, and at least one of the opposing plates includes a protruding feature that intersects the wire when the wire is clamped forming a first notch in the wire. The method further includes bonding the wire to a bonding surface, releasing the wire from the clamp, passing the wire a notch pitch distance through the clamp, clamping the wire with the clamp forming a second notch in the wire, and breaking the wire leaving a bonded portion of the wire on the bonding surface. The second notch is the notch pitch distance from the first notch along the wire.

    摘要翻译: 公开了用于形成柱形凸块的方法和用于形成凸块凸块的装置。 根据实施例,一种方法包括用夹具夹紧线。 所述夹具包括至少两个相对的板,并且当所述线被夹紧形成所述线中的第一凹口时,所述相对板中的至少一个包括与所述线相交的突出特征。 该方法还包括将线接合到接合表面,将线从夹具中释放出来,使线穿过钳口的间距距离通过夹具夹紧线,夹具在线中形成第二凹口,并将线断开, 接合表面上的导线的接合部分。 第二个凹口是距离第一个凹口沿导线的切口间距距离。

    Apparatus and Method for the Singulation of a Semiconductor Wafer
    10.
    发明申请
    Apparatus and Method for the Singulation of a Semiconductor Wafer 审中-公开
    用于单晶半导体晶片的装置和方法

    公开(公告)号:US20130273717A1

    公开(公告)日:2013-10-17

    申请号:US13448648

    申请日:2012-04-17

    摘要: The present disclosure is directed to an apparatus for the singulation of a semiconductor substrate or wafer. In some embodiments the singulation apparatus comprises a plurality of cutting devices. The cutting devices are configured to form multiple concurrent cutting lines in parallel on a surface of the semiconductor wafer. In some embodiments, the singulation apparatus comprises at least two dicing saws or laser modules. The disclosed singulation apparatus can dice the semiconductor wafer into individual chips by dicing in a direction across a complete circumferential edge of the wafer, thereby decreasing process time and increasing throughput.

    摘要翻译: 本公开涉及一种用于单个半导体衬底或晶片的装置。 在一些实施例中,分割装置包括多个切割装置。 切割装置被配置为在半导体晶片的表面上并行地形成多个并行切割线。 在一些实施例中,分割装置包括至少两个切割锯或激光模块。 所公开的分割装置可以通过在晶片的整个圆周边缘上的切割方式将半导体晶片切割成单独的芯片,从而减少处理时间并增加产量。